Effect of Mg content on structural, electrical and optical properties of Zn1−xMgxO nanocomposite thin films

We report on the growth of Zn_1−xMg_xO (ZMO) thin films on quartz substrate using pulsed laser deposition (PLD) technique. The influence of varying Mg composition on structural, electrical and optical properties of ZMO films has been systematically investigated. Increase in Mg content (in the range 0.0?x?1.0), reflects the structural phase transition from wurtzite via mixed phase region to cubic one. X-ray diffraction (XRD) studies indicate the hexagonal wurtzite phase at Mg composition ranging from 0% to 30%; mixture of wurtzite and cubic phases for 40% and single cubic phase at Mg content greater than 50%. The variation of the cation-anion bond length to Mg content shows that the lattice constant of the hexagonal ZMO decreases with corresponding increase in Mg content, which result in the structure gradually deviating from the wurtzite structure. The optical measurements reveal a blue shift in absorption edge and increase in transmittance from 75% to 96% with increase in Mg content. Tuning of the band gap has been obtained from 3.41 to 6.58 eV with corresponding increase in Mg content from x=0.0 to 1.0, which demonstrates that the films are useful for window layer of solar cells that improve the overall efficiency by decreasing the absorption loss.     

Analysis of heterointerface recombination by Zn1−xMgxO for window layer of Cu(In,Ga)Se2 solar cells

An adjustment of a conduction band offset (CBO) of a window/absorber heterointerface is important for high efficiency Cu(In,Ga)Se₂ (CIGS) solar cells. In this study, the heterointerface recombination was characterized by the reduction of the thickness of a CdS layer and the adjustment of a CBO value by a Zn_1−xMg_xO (ZMO) layer. In ZnO/CdS/CIGS solar cells, open-circuit voltage (V_oc) and shunt resistance (R_sh) decreased with reducing the CdS thickness. In constant, significant reductions of V_oc and R_sh were not observed in ZMO/CdS/CIGS solar cells. With decreasing the CdS thickness, the CBO of (ZnO or ZMO)/CIGS become dominant for recombination. Also, the dominant mechanisms of recombination of the CIGS solar cells are discussed by the estimation of an activation energy obtained from temperature-dependent current-voltage measurements.     

New trends to grow the n-CdZn (S1−xSex)2/p-CuIn(S1−xSex)2 heterojunction thin films for solar cell applications

The n-CdZn(S_1−xSe_x) and p-CuIn(S_1−xSe_x)₂ thin films have been grown by the solution growth technique (SGT) on glass substrates. Also the heterojunction (p–n) based on n-CdZn (S_1−xSe_x)₂ and p-CuIn (S_1−xSe_x)₂ thin films fabricated by same technique. The n-CdZn(S_1−xSe_x)₂ thin film has been used as a window material which reduced the lattice mismatch problem at the junction with CuIn (S_1−xSe_x)₂ thin film as an absorber layer for stable solar cell preparation. Elemental analysis of the n-CdZn (S_1−xSe_x)₂ and p-CuIn(S_1−xSe_x)₂ thin films was confirmed by energy-dispersive analysis of X-ray (EDAX). The structural and optical properties were changed with respect to composition ‘x’ values. The best results of these parameters were obtained at x=0.5 composition. The uniform morphology of each film as well as the continuous smooth thickness deposition onto the glass substrates was confirmed by SEM study. The optical band gaps were determined from transmittance spectra in the range of 350–1000 nm. These values are 1.22 and 2.39 eV for CuIn(S_0.5Se_0.5)₂ and CdZn(S_0.5Se_0.5)₂ thin films, respectively. J–V characteristic was measured for the n-CdZn(S_1−xSe_x)₂/p-CuIn(S_1−xSe_x)₂ heterojunction thin films under light illumination. The device parameters V_oc=474.4 mV, J_sc=13.21 mA/cm², FF=47.8% and η=3.5% under an illumination of 85 mW/cm² on a cell active area of 1 cm² have been calculated for solar cell fabrication. The J–V characteristic of the device under dark condition was also studied and the ideality factor was calculated which is equal to 1.9 for n-CdZn(S_0.5Se_0.5)₂/p-CuIn(S_0.5Se_0.5)₂ heterojunction thin films.     

Impact of Zn1-xMgxO:Al transparent electrode for buffer-less Cu(In,Ga)Se2 solar cells

Buffer layers such as CdS and ZnS are used in high efficiency Cu(In,Ga)Se₂ (CIGS) thin film solar cells. Eliminating buffer layer is attractive to realize low-cost thin film solar cells by reducing fabrication process. However, the elimination of the buffer layers leads to shunting due to the interface recombination between transparent conductive oxide (TCO) and CIGS layers. To reduce the interface recombination, the control of conduction band offset (CBO) is effective. In this study, we fabricated Zn_1−xMg_xO:Al (ZMO:Al) as the TCO for the CBO control. ZMO:Al was prepared by co-sputtering of ZnO:Al₂O₃ (ZnO:Al) and MgO:Al₂O₃ targets. ZMO:Al shows high transmittance in visible region and the band gap energy widen with the addition of Mg to ZnO:Al. Buffer-less CIGS solar cells with an Al/NiCr/TCO/CIGS/Mo/soda-lime glass structure using ZMO:Al and ZnO:Al were fabricated. For comparison, ZnO/CdS buffered cell was also fabricated. Current density-voltage characteristics of the devices showed the cell with ZMO:Al film achieved higher efficiency compared to the buffer-less cell with ZnO:Al. This result suggested that the control of CBO is important to reduce interface recombination between TCO layer and CIGS absorber.     

Control of conduction band offset in wide-gap Cu(In,Ga)Se2 solar cells

The effects of conduction band offset of window/Cu(In,Ga)Se₂ (CIGS) layers in wide-gap CIGS based solar cells are investigated. In order to control the conduction band offset, a Zn_1−xMg_xO film was utilized as the window layer. We fabricated CIGS solar cells consisting of an ITO/Zn_1−xMg_xO/CdS/CIGS/Mo/glass structure with various CIGS band gaps (E_g≈0.97–1.43 eV). The solar cells with CIGS band gaps wider than 1.15 eV showed higher open circuit voltages and fill factors than those of conventional ZnO/CdS/CIGS solar cells. The improvement is attributed to the reduction of the CdS/CIGS interface recombination, and it is also supported by the theoretical analysis using device simulation.     

Sputtered Cd1−xZnxTe films for top junctions in tandem solar cells

Cd_1−xZn_xTe alloy films with 1.6 and 1.7 eV band gaps were deposited by RF magnetron sputtering from targets made either of mixed powders or alloys of CdTe and ZnTe (25% and 40%). High-quality polycrystalline films with the (1 1 1) preferred orientation were obtained. The films were characterized using X-ray diffraction (XRD), scanning electron microscopy, resistivity, optical absorption, Raman, and photoluminescence. The EDS, XRD, and optical absorption analysis indicated that the x-value of the as-grown films were typically 0.20 and 0.30 for films sputtered from 25% and 40% ZnTe containing targets, respectively. The as-deposited alloy films exhibit quite low photovoltaic performance when used to make cells with CdS as the hetero-junction partner. Therefore, we have studied various post-deposition treatments with vapors of chlorine-containing materials, CdCl₂ and ZnCl₂, in dry air or H₂/Ar ambient at 390 °C. The best performance of a Cd_1−xZn_xTe cell (, ) was found for treatment with vapors of the mixed CdCl₂+0.5%ZnCl₂ in an H₂/Ar ambient after pre-annealing at 520 °C in pure H₂/Ar.     

Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers

Polycrystalline Cu(InGa)Se₂ (CIGS) thin-film solar cells using evaporated In_xSe_y and ZnIn_xSe_y buffer layers are prepared. The purpose of this work is to replace the chemical bath deposited CdS buffer layer with a continuously evaporated buffer layer. In this study, a major effort is made to improve the performance of CIGS thin-film solar cells with these buffer layers. The relationship between the cell performance and the substrate temperature for these buffer layers is demonstrated. Even at the high substrate temperature of about 550°C for the buffer layer, efficiencies of more than 11% were obtained. Furthermore, the I−V characteristics of the cells using these buffer layers are compared with cells using CdS buffer layers fabricated by chemical bath deposition method. We have achieved relatively high efficiencies of over 15% using both the ZnIn_xSe_y and the CdS buffer layers.     

Preparation and characterization of semiconducting Zn1−xCdxSe thin films

The electrodeposition of Zn_1−xCd_xSe polycrystalline semiconducting thin films from aqueous acidic bath without any additives onto tin oxide-coated conducting glass and titanium substrates are described. The influence of deposition parameters on the film formation and deposition mechanism based on cyclic voltammetry is discussed. X-ray diffraction studies showed the polycrystalline wurtzite nature for all the films deposited under the proposed conditions. The optical studies revealed the band gap values in the range between 2.82 and 1.72 eV as the film composition changes from ZnSe to CdSe. It has been observed that the concentration of cadmium salt plays an essential role on the alloy formation. The surface morphological studies and composition analysis were carried out and the results are discussed.     

Growth of highly c-axis oriented Mg:ZnO nanorods on Al2O3 substrate towards high-performance H2 sensing

Highly c-axis oriented Mg:ZnO films were fabricated on Al₂O₃ substrate by radio frequency sputtering for different substrate temperatures. The crystal structure revealed that the Mg dopants are well integrated into ZnO wurtzite lattice. X-ray photoelectron spectroscopy measurements also confirmed the successful incorporation of Mg into ZnO. The substrate temperature exhibit significant influence on the optical absorbance and band gap of Mg:ZnO films. Scanning electron microscope images revealed the formation of Mg:ZnO nanorods with good crystalline quality. The films prepared at 1200 °C show well grown rods of Mg:ZnO due to strengthening of the preferred orientation of ZnO along the c-axis. The Mg:ZnO/Al₂O₃ films prepared at different temperature were tested for its sensing performance towards 200 ppm of H₂ at room temperature. The Mg:ZnO sensor prepared at 1200 °C revealed fast response and recovery time of about 85 s and 70 s, respectively. The response of the sensor was linear to H₂ concentration in the range of 100–500 ppm. It can be summarized that this high performance H₂ sensor has potential for use as a portable room temperature gas sensor.     

Annealing effects on Zn1−xMgxO/CIGS interfaces characterized by ultraviolet light excited time-resolved photoluminescence

Annealed Zn_1−xMg_xO/Cu(In,Ga)Se₂ (CIGS) interfaces have been characterized by ultraviolet light excited time-resolved photoluminescence (TRPL). The TRPL lifetime of the Zn_1−xMg_xO/CIGS film increased on increasing the annealing temperature to 250 °C, whereas the TRPL lifetime of the CdS/CIGS film had little change by annealing at temperatures lower than 200 °C. This is attributed to the recovery of physical damages by annealing, induced by sputtering of the Zn_1−xMg_xO film. The TRPL lifetime abruptly decreased with annealing at 300 °C. The diffusion of excess Zn from the Zn_1−xMg_xO film into the CIGS interface is clearly observed in secondary ion mass spectroscopy (SIMS) depth profiles. These results indicate that excess Zn at the vicinity of the CIGS surface acts as non-radiative centers at the interface. The TRPL lifetime of the Zn_1−xMg_xO/CIGS film annealed at 250 °C reached values to be comparable to that of the as-deposited CdS/CIGS film. Performance of the Zn_1−xMg_xO/CIGS cells varied with the annealing temperature in the same manner as the TRPL lifetime. The highest efficiency of the Zn_1−xMg_xO/CIGS solar cells was achieved for annealing at 250 °C. The results of the TRPL lifetime on annealing show that the cell efficiency is strongly influenced by the Zn_1−xMg_xO/CIGS interface states related to the damages and diffusion of Zn.     

Characterization of Ti1−xAlxN coatings with selective IR reflectivity

Ti_1−xAl_xN thin films were deposited by reactive magnetron sputtering. The obtained different stoichiometries give rise to different optical properties as the films change from metallic to dielectric. In this work the IR reflectivity of these coatings is investigated taking into account different application fields for IR selective Ti_1−xAl_xN thin films.Low Al content coatings present high reflectivity, high absorptance and low thermal emittance. High Al compositions give raise to coatings with high absorptance and high thermal emittance.The composition of the coatings was evaluated combining electron energy loss spectroscopy (EELS) and energy dispersive spectroscopy. Scanning electron microscopy (SEM) revealed a columnar structure. Reflectance spectra for the visible and infrared spectral ranges were used to obtain the solar absorptance and thermal emittance values, used to calculate the equilibrium temperature of the coatings.The thermal stability in air from 300 to 600 °C was also evaluated.     

Deposition of highly photoconductive wide band gap a-SiOx:H thin films at a high temperature without H2-dilution

Electrical and optical characterisation of hydrogenated amorphous silicon–oxygen alloy thin films (a-SiO_x:H, x<2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 °C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73 eV. The sample with an oxygen concentration of 26.2 at% and a reasonably high bandgap of 2.18 eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E₀) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1×10¹⁶ cm⁻³. One of the highly alloyed samples with exhibited a detectable photosensitivity.     

Composition, surface topography, structure, Raman, and electrochemical/photoelectrochemical characterisation of CdxHg1−xTe films

Cd-rich Cd_xHg_{1 − x}Te films have been electrodeposited under potentiostatic conditions on conducting glass and Ti substrates from an acidic solution containing the respective ions as Cd²⁺:Hg²⁺:HTeO₂⁺ = 100:1:2. Six films one after another have been prepared from a single electrochemical cell. EDAX analysis of the air annealed films show decreasing Hg content in the deposit as the number of film preparation increases. SEM analysis indicate undulatory surface with Hg-rich clusters at the top surface. XRD analysis indicate the presence of Cd_xHg_{1 − x}Te along with . The Cd_xHg_{1 − x}Te alloy formation have been confirmed from Raman shift measurements which change with composition, x. The as-deposited films are n-type but converts to p-type after air annealing. Spectral response measurements gave band gap values that change with Hg content in the deposit. Band gap values ranging from 1.1 eV to 1.45 eV have been estimated. Photoelectrochemical solar cells using polysulphide electrolyte have been fabricated which gave an open-circuit photovoltage and short-circuit photocurrent, respectively, as 325 mV and 5.5 mA/cm² under 60 mW/cm² intensity of illumination.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

Photoelectrochemical properties of CdSxSe1−x films

CdS_xSe_1−x films of different composition (0 < x < 1) were deposited by pulse plating technique at different duty cycles in the range of 10-50%. The films were polycrystalline and exhibited hexagonal structure. The band gap of the films varies from 1.68 to 2.39 eV as the concentration of CdS increases. Energy Dispersive analysis of X-rays (EDAX) measurements indicate that the composition of the films are nearly the same as that of the precursors considered for the deposition. Atomic force microscopy studies indicated that the grain size increased from 20 to 200 nm as the concentration of CdSe increased. Photoelectrochemical (PEC) cell studies indicated that the films of composition CdS_0.9Se_0.1 exhibited maximum photoactivity. Mott-Schottky studies indicated that the films exhibit n-type behaviour. Spectral response measurements indicated that the photocurrent maxima occurred at the wavelength value corresponding to the band gap of the films.     

Field effect surface passivation of SiO2/Si interfaces by heat treatment with high-pressure H2O vapor

We investigated a simple field effect passivation of the silicon surfaces using the high-pressure H₂O vapor heating. Heat treatment with 2.1×10⁶ Pa H₂O vapor at 260°C for 3 h reduced the surface recombination velocity from 405 cm/s (before the heat treatment) to 38 cm/s for the thermally evaporated SiO_x film/Si. Additional deposition of 140 nm-SiO_x films (x<2) with a high density of fixed positive charges on the SiO₂/Si samples further decreased the surface recombination velocity to 22 cm/s. We also demonstrated the field effect passivation for n-type silicon wafer coated with thermally grown SiO₂. Additional deposition of 210 nm SiO_x films on both the front and rear surfaces increased the effective lifetime from 1.4 to 4.6 ms. Combination of thermal evaporation of SiO_x film and the heat treatment with high-pressure H₂O vapor is effective for low-temperature passivation of the silicon surface.     

An ab initio study of the electronic structure and optical properties of CdS1−xTex alloys

The structural, electronic and optical properties of cubic CdS_1−xTe_x alloys, with Te-concentrations varying from 0% up to 100% are investigated. The calculations are based on the total-energy calculations using the full potential-linearized augmented plane wave (FP-LAPW) method. The exchange and correlation potential is treated by the generalized-gradient approximation (GGA) for the total-energy calculations, while for electronic properties in addition to that the Engel–Vosko (EV-GGA) formalism was also applied. The ground state properties for all Te-concentrations are presented. The optical dielectric constant is also determined for both the binary and their related ternary alloys.     

Highly structured TiO2/In(OH)xSy/PbS/PEDOT:PSS for photovoltaic applications

A system of highly structured TiO₂/In(OH)_xS_y/PbS/PEDOT:PSS has been developed and investigated by photovoltage spectroscopy, X-ray photo- and Auger electron spectroscopies, electron microscopy, and photovoltaic response. TiO₂, In(OH)_xS_y, PbS, and PEDOT:PSS serve as electron conductor, buffer layer, absorber, and hole conductor, respectively. Both buffer and absorber layers were prepared by chemical bath deposition. The band gap of as-prepared In(OH)_xS_y varied between 2.4 and 3.5 eV depending on the pH-value of the solution. In addition, the band gap of the PbS could be widened to about 0.85 eV making the application as absorber for solar cells feasible. At present, corresponding solar cell devices reach short-circuit current densities of about 8 mA/cm² and open-circuit voltages of about 0.3 V.     

Progress in electrodeposited absorber layer for CuIn(1−x)GaxSe2 (CIGS) solar cells

Thin film solar cells with chalcopyrite CuInSe₂/Cu(InGa)Se₂ (CIS/CIGS) absorber layers have attracted significant research interest as an important light-to-electricity converter with widespread commercialization prospects. When compared to the ternary CIS, the quaternary CIGS has more desirable optical band gap and has been found to be the most efficient among all the CIS-based derivatives. Amid various fabrication methods available for the absorber layer, electrodeposition may be the most effective alternative to the expensive vacuum based techniques. This paper reviewed the developments in the area of electrodeposition for the fabrication of the CIGS absorber layer. The difficulties in incorporating the optimum amount of Ga in the film and the likely mechanism behind the deposition were highlighted. The role of deposition parameters was discussed along with the phase and microstructure variation of an as-electrodeposited CIGS layer from a typical acid bath. Related novel strategies such as individual In, Ga and their binary alloy deposition for applications in CIGS solar cells were briefed.     

Characterization and electrochromic properties of CuxNi1−xO films prepared by sol–gel dip-coating

Cu_xNi_1−xO electrochromic thin films were prepared by sol–gel dip coating and characterized by XRD, UV–vis absorption and electrochromic test. XRD results show that the structure of the Cu_x Ni_1−xO thin films is still in cubic NiO structure. UV–vis absorption spectra show that the absorption edges of the Cu_xNi_1−xO films can be tuned from 335 nm (x = 0) to 550 nm (x = 0.3), and the transmittance of the colored films decrease as the content of Cu increases. Cu_xNi_1−xO films show good electrochromic behavior, both the coloring and bleaching time for a Cu_0.2Ni_0.8O film were less than 1 s, with a variation of transmittance up to 75% at the wavelength of 632.8 nm.