Studies on morphological and electrical properties of Al incorporated combusted iron oxide

The aluminium incorporated iron oxide samples were prepared by combustion route using aluminium nitrate and ferric trichloride as precursors. The samples were characterized for their morphological, dielectrical, impedance and thermal conductivity properties as a function of temperature. A strong low frequency dielectric dispersion is found to exist in these samples; this is ascribed to the presence of the ionized space charge carriers such as oxygen ion vacancies and interfacial polarization. The room temperature dielectric constant and the loss tangent (tan δ) at 1 kHz are 315 and 0.0855 for optimized 10 at.% Al:Fe₂O₃ sample, respectively. The frequency analysis of dielectric and ac conduction properties of these samples suggests the conduction process in these samples to be via oxygen ion vacancy motion through various defect sites. Impedance spectroscopy is used to characterize the electrical behavior. Results indicate that the relaxation mechanism of the material is temperature and frequency dependent and has dominant bulk contribution in different temperature ranges.     

Optical properties of antimony-implanted ZnO epilayers

Antimony ions were implanted into ZnO films grown on c-plane sapphire by pulsed-laser deposition. Raman scattering modes of the Sb-implanted samples were found to be influenced by the implantation dose. A characteristic peak at 576 cm^− 1 was observed with an asymmetric shape due to ion damage to the lattice of the implanted ZnO films. When the implant dose was low, the height of the peak was reduced by rapid thermal annealing at 400-600 °C and the symmetry of the spectra was recovered. However, when the Sb dose exceeded 1 × 10¹⁵ cm^− 2, the peak maintained unchanged after rapid thermal annealing at temperatures up to 600 °C. A broad and low Raman peak was observed at 437 cm^− 1, which is related to the surface damage caused by the energetic ion bombarding. Photoluminescence measurement showed a decrease of the bandedge emission at 3.36 eV, a clear effect of defects induced by the implantation, and confirmed partial recovery of the crystal by rapid annealing.     

Morphology and optical properties of Co doped ZnO textured thin films

Depending on the ZnO seed-layers, a new kind of cobalt doped zinc oxide (Zn_1−xCo_xO) thin films with controllable morphology were prepared by a facile solvothermal method. A series of ZnO thin films with different Co contents were applied to study the effect of doped Co on morphology, structural and optical properties. It is found that the doped content plays an important role on morphology evolution of Zn_1−xCo_xO films. The results of scanning electron microscope (SEM) indicate that the Zn_1−xCo_xO films are highly uniform and porous. Co has been successfully doped into the ZnO lattice structure and revealed by X-ray diffraction (XRD) and energy dispersive spectrum (EDS). It can be found that Zn_1−xCo_xO thin films possess good crystalline quality through the characterization of transmission electron microscope (TEM) and high-resolution transmission electron microscopy (HRTEM). All of the samples show a stronger violet emission and ultraviolet absorption, and the violet emission peaks shift towards red with increasing of Co content. In addition, the magnetic result demonstrates that the prepared Co-doped ZnO thin films are room-temperature ferromagnetic materials.     

ZnO nanoneedles fabricated by a simple approach and their optical properties

Spoke-like ZnO nanoneedles have been successfully synthesized at the ambient pressure through thermally oxidizing Zn powders containing Au nanoparticles. X-ray diffraction analysis indicates that the ZnO nanoneedles have a hexagonal wurtzite structure of the crystalline ZnO. The morphology of the products was examined by FESEM. The photoluminescenee(PL) spectrum under 325 nm exhibits both an UV emission and a green emission. It is interesting to note that the heating rate plays a key role in the synthesis of ZnO nanoneedles. Based on this discovery we propose to explain the special growth behavior as novel mechanism that a large temperature gradient and Au nanoparticles simultaneously result in the spoke-like ZnO nanoneedles growth.     

Effect of annealing treatment onoptical and electrical properties of ZnO films

The ZnO-Al films were prepared by R. F. magnetron sputtering system using a Zn-Al target (with purity of 99.99 %). The obtained films were characterized by X-ray diffraction, SEM and optical and electrical measurements. The experimental results show that the properties of ZnO films can be further improved by annealing treatment. The crystallinity of ZnO films becomes better, and the optical gap energy is decreased, but thermoelectric power is enhanced after heat treatment. The optical gap energy decreases from 3.75 eV to 3.68 eV when the annealing temperature increases from 25℃ to 400℃. This can be ascribed to the decrease of carrier concentration, resulting in Burstein shift.     

Effect of annealing atmosphere on magnetic properties of pure ZnO and Na: ZnO films

Pure ZnO and Zn0.96Na0.04O films were grown on quartz substrates by sol-gel technology.The XRD analysis revealed that all thin films had hexagonal wurtzite structure and obvious c-axis preferred orientation.Ferromagnetism was precisely measured by an alternating gradient magnetometer (AGM).To explore the nature original ferromagnetism,the effect of annealing atmosphere on magnetic properties of the films was studied.Compared with pure ZnO,magnetic hysteresis loops showed that doping Na atoms enhanced saturation magnetism.The magnetism of the films annealed in the air atmosphere was significantly better than that in the O2 atmosphere.The photoluminescence (PL) spectrum analysis suggested that the ferromagnetism was due to the defects in the films.     

Effects of mineralizing agent on the morphologies and photoluminescence properties of Eu-doped ZnO nanomaterials

Eu-doped ZnO nanomaterials with different morphologies were successfully synthesized with various mineralizing agents by the mild hydrothermal method. The mineralizing agent was found to have strong effect on the crystal structures, morphologies and photoluminescence properties of the samples. Transmission electron microscopy and scanning electron microscopy images showed the Eu-doped ZnO nanorods, nanoneedles and cactus-like microspheres based on nanosheets can be fabricated by choosing NaOH, C₆H₁₂N₄ and (NH₂)₂CO as the mineralizing agents, respectively. The results from X-ray diffraction and X-ray photoelectron spectroscopy indicated europium ions with trivalent valence were successfully doped into the crystal lattice of ZnO matrix. In the PL spectra from the Eu-doped ZnO nanomaterials synthesized with mineralizing agents of NaOH or (NH₂)₂CO, three separated red emissions can be obviously observed, which can be attributed to the 4f-4f intrashell transitions of ⁵D₀ → ⁷F₀, ⁵D₀ → ⁷F₁ and ⁵D₀ → ⁷F₂ of Eu³⁺ ions, respectively. The intensity of red emission was found to be related with the concentration of intrinsic defects, especially O-vacancies, which could assist the energy transfer from the ZnO host to the Eu³⁺ ions.     

KOH处理对ZnO纳米棒阵列结构及光电性能的影响(英文)

采用简单的化学沉积结合KOH碱刻蚀的方法,在导电玻璃(FTO)上生长ZnO纳米棒阵列(ZnONRs)。用X射线衍射(XRD)、扫描电子显微镜(SEM)、电流—电压(I—V)曲线对所得样品的晶型、形貌及光电性能进行测试,结果表明:ZnONRs呈纤铅矿型;ZnONRs的形貌及光电性能与KOH的浓度及刻蚀时间密切相关,经0.1mol/LKOH刻蚀1h后可得到排列高度有序且分布均匀的ZnONRs;KOH刻蚀后的ZnONRs与未刻蚀前高密度的ZnONRs相比,其光学性能得到提高。0.1mol/LKOH刻蚀1h的ZnONRs作为太阳能电池的光阳极,其光电转换效率、短路电流、开路电压较未刻蚀的ZnONRs分别提高了0.71%、2.79mA和0.03V。     

烧结工艺对ZnO压敏陶瓷微观结构与电学性能影响

以ZnO粉末为主要原料,添加TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在不同烧结温度(1100~1250℃)与保温时间(1.0~2.5h)下制备ZnO压敏陶瓷。采用SEM观察陶瓷形貌,利用压敏电阻直流参数仪测试陶瓷的电学性能,研究烧结温度与保温时间对陶瓷结构和性能的影响。结果表明,随烧结温度升高,压敏电压、漏电流逐渐降低,而非线性系数先减小后增加。制备ZnO压敏陶瓷的适宜烧结温度与保温时间分别为1250℃、1h,压敏电压为17.0V/mm、漏电流为0.014mA、非线性系数为14.2,陶瓷内部晶粒可长大至128.7μm。     

Effects of temperature and Nickel content on magnetic properties of Ni-doped ZnO

Magnetic properties of diluted magnetic semiconductors (DMSs), Ni-doped ZnO materials, prepared by sol-gel method were investigated by measuring magnetization as functions of magnetic field.The Ni content affects the magnetic properties at low sintered temperature but it has few effects on the magnetic properties at high sintered temperature.The sintered temperature has great effects on the magnetic properties of Ni/ZnO at high original mole ratio of Ni/Zn while it has slight effects on the magnetic properties of Ni/ZnO at low original mole ratio of Ni/Zn whatever low or high sintered temperature.     

激光原位制备ZnO纳米柱形貌及光学特性

利用NEL-2500A轴向快速流动CO2连续激光辐射金属锌板(纯度为99.99wt%)同轴输送氧气,在金属锌板表面上原位制备氧化锌纳米柱晶体,晶体的底面直径为60～70nm,高度约为150nm。利用场发射扫描电子显微镜(FE-SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、X射线能谱仪(EDX)以及光致发光(PL)等试验对原位制备的ZnO纳米柱的形貌、组成成分、相结构以及光致发光性质进行了表征,并对ZnO纳米柱生长晶体的机理进行了分析。结果表明,利用本文方法能够制备纯度较高ZnO纳米柱晶体,ZnO纳米柱为单晶结构并沿〈0001〉方向生长,其结晶形貌取决于发生反应局部区域氧气的过饱和度。     

Effect of TiO2 on high-temperature thermoelectric properties of ZnO

The as-sintered Zn_1−xTi_xO (0.01 ≤ x ≤ 0.05) samples contained a solid solution of Zn_1−xTi_xO with a wurtzite structure and a small amount of the cubic spinel Zn₂TiO₄. The amount of Zn₂TiO₄ increased with an increase in TiO₂ content. The density and grain size increased with the small TiO₂ content (≤0.01), and then they decreased gradually by further increasing the TiO₂ content. The addition of TiO₂ to ZnO led to a significant increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient, resulting in an increase in the power factor. The highest value of power factor (7.6 × 10⁻⁴ W m⁻¹ K⁻²) was attained for Zn_0.98Ti_0.02O at 1073 K. It is demonstrated that the TiO₂ addition is fairly effective for enhancing thermoelectric properties.     

Electrical and optical properties dependence on evolution of roughness and thickness of Ga:ZnO films on rough quartz substrates

The paper studies GZO films deposited on quartz substrates by a laser deposition system. The XRD and AFM results as well as the calculation of height-height correlation function H (r, t) and its parameters w(t) and ξ(t) reveal that the film growth can be divided into two stages, and that the turning point of these two stages is the time when the film exhibits fractal characteristics. The influence of thickness and morphology roughness evolution on the electrical resistivity and optical transmittance in these two stages are described. It is found that the electrical resistivity mainly depends on the film thickness in the first stage, while in the following stage, the film possess self-affine fractal characteristics. The morphology roughness evolution plays an important role in the resistivity. The transmittance is found to decrease with the increase of film thickness in the two stages and it is also found to be sensitive to the evolution of surface roughness. The lowest resistivity obtained is 4.85 × 10^− 4 Ω cm with an average optical transmittance of 85% in the 200 nm thick film deposited for 10 min.     

预沉积ZnO薄膜对ZnO−MoS2/ZnO复合涂层结构与性能影响

目的 通过优化原子层沉积工艺获取不同厚度ZnO薄膜,研究ZnO薄膜晶体取向对ZnO?MoS2涂层生长结构的影响,获得具有优异摩擦学性能的ZnO?MoS2/ZnO复合涂层。方法 采用原子层沉积法在不锈钢基体上预沉积不同厚度的ZnO薄膜,再用射频磁控溅射技术继续沉积ZnO?MoS2涂层,制备ZnO?MoS2/ZnO固体润滑复合涂层。结果 X射线衍射分析发现,预沉积ZnO薄膜有诱导后续ZnO?MoS2涂层沉积生长的作用,预沉积100 nm厚ZnO薄膜的ZnO?MoS2/ZnO复合涂层显示出宽化的MoS2 (002)馒头峰,其截面形貌显示为致密的体型结构,获得的摩擦因数最低(0.08),纳米硬度最高(2.33 GPa),硬度/模量比显示该复合涂层的耐磨损性能得到提升;X射线光电子能谱分析结果表明,复合涂层表面游离S与空气中水发生反应程度大约为原子数分数5%,显示复合涂层耐湿性能较好;基于原子层沉积ZnO薄膜生长及其对后续ZnO?MoS2涂层生长的影响分析,提出了ZnO?MoS2/ZnO复合涂层磨损模型,阐明了ZnO薄膜对复合涂层结构及摩擦学性能的影响,并以该模型解释了200 nm厚 ZnO薄膜上沉积ZnO?MoS2涂层出现的摩擦因数由高到低的变化趋势及最终磨损失效现象。结论 合适的原子层沉积制备的ZnO薄膜有利于MoS2 (002)取向生长,可有效提升ZnO?MoS2/ZnO复合涂层的摩擦学性能;控制ZnO薄膜厚度,可实现ZnO薄膜与基底及ZnO?MoS2层间界面之间的优化结合,以制得具有较好摩擦学性能及使用寿命的ZnO?MoS2/ZnO复合涂层。     

Optical properties and photocatalytic activity of Nd-doped ZnO powders

To improve the photocatalytic activity of zinc oxides, ZnO powders doped with different neodymium (Nd) concentrations were prepared via hydrothermal method. X-ray diffraction (XRD) together with X-ray photoelectron spectroscopy (XPS) patterns revealed that Nd atoms were successfully incorporated into the ZnO lattice. XRD pattern also showed some anisotropy of the powders. The photoluminescence (PL) spectrum demonstrated a strong and broad peak in the visible light region, and the intensity of visible light emission was enhanced by Nd-doping. The photocatalytic activity was evaluated by the degradation of methyl orange solution. It is shown that doping of Nd into ZnO induces an increase of the photocatalytic activity and it attains to optimum at 3% (mole fraction) doping concentration. The intense visible light emission and the enhanced photocatalytic activity were explained by the increase in electron hole pairs and induced defects like antisite oxygen O_Zn and interstitial oxygen O_i, due to the doping of Nd.     

Low-temperature growth and optical properties of ZnO nanorods

Zinc oxide (ZnO) nanorods were grown on ITO conducting glass by the chemical solution deposition method (CBD) in an aqueous solution that contained zinc nitrate hexahydrate (Zn(NO₃)₂·6H₂O) and methenamine (C₆H₁₂N₄). The size of ZnO nanorods increased with molar concentration of zinc nitrate, and the nanorods with different aspect ratios also formed through tuning the reaction time when the molar concentration was 0.1 M. The length of nanorods increased significantly with the reaction time, but the thickness of the film deposited on the substrate only slightly increased. From the X-ray measurement results, it can be seen that the growth orientation of the as-prepared ZnO nanorods was [0 0 2]. Photoluminescence measurements were also carried out, the result showed a blue shift in violet emission with the reduction in crystal size.     

Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

The Sb-doped ZnO (ZnO:Sb) and undoped ZnO films with wurtzite structure and (0 0 2) preferred orientation were deposited on Si(1 0 0) substrate at 550 °C. It is deduced from XRD and XPS measurements that the Sb in the as-grown ZnO:Sb has high oxidation state and dopes in the form of oxygen-rich Sb-O clusters, which results in a large inner stress and a great increase of the c-axis lattice constant. After annealing at 750 °C under vacuum, the c-axis lattice constant of the ZnO:Sb decreases sharply to near the value of ZnO bulk, the electrical properties change from n-type to p-type and the PL intensity ratio of the visible to ultraviolet emission band goes down greatly, as the Sb content increases from 0 to 2.1 at.%. EDS and XRD measurements indicate that some of Sb dopants escape from the ZnO:Sb films and the oxygen-rich Sb-O clusters vanished after the annealing process. The effect of the change in Sb doping behavior on crystal structure, conductivity and PL is discussed in detail.     

钇、镉共掺杂氧化锌纳米粉体的合成及光学性能

为了研究能隙修改和发光强度之间的关系,通过化学共沉淀法制备钇、镉共掺杂的氧化锌纳米粉体。采用XRD、XPS及PL对样品的晶体结构和光学性能进行研究。通过对钇、镉离子对氧化锌光学性能影响的研究发现,钇的掺入能够有效地增强氧化锌的紫外发光,钇、镉共掺杂在增强发光的同时,还使得氧化锌的带隙窄化,使得紫外发光红移,从而使得样品的室温光致发光图谱呈现出增强的紫光发射。该材料有望应用在制备光电器件方面。     

Structure and photoluminescence properties of Ag-coated ZnO nano-needles

A large number of zinc oxide (ZnO) nano-needles were synthesized by thermal oxidation of pure zinc. The surfaces of ZnO nano-needles were coated with a layer of Ag by pulse electro-deposition technique. The uncoated and coated ZnO nano-needles were characterized by using the X-ray diffraction and the scanning electron microscope (SEM). The results showed that the uncoated samples were close-packed hexagonal structure, which showed needle-like morphology. Their average diameter is about 40 nm, lengths up to 5 μm. At the same time we observed that the prepared ZnO nano-needles have been coated with Ag successfully. The photoluminescence spectrums of ZnO nano-needles with Ag-coated and uncoated were analyzed, finding that the uncoated ZnO nano-needles have two fluorescence peaks at 388 nm and 470.8 nm, respectively, the relative intensity of 143.4 and 93.61; and the Ag-coated ZnO nano-needles showed a pair of strong peaks at 387.4 nm and 405.2 nm, the relative intensity of 1366 and 1305, respectively, indicating that the Ag-coated ZnO nano-needles can increase the absorption of UV light.     

基片温度对Co掺杂ZnO薄膜室温铁磁性的影响

采用磁控共溅射法在Al2O3(0001)基片上沉积了Zn1-xCoxO(x=0.08～0.3%)薄膜,研究了基片温度对Co掺杂ZnO薄膜结构和磁性的影响.结果表明:Al2O3(001)基片很好地诱导了ZnCoO薄膜(002)取向生长,并且所有的薄膜均显示室温铁磁性.较低的基片温度不仅能有效抑制薄膜中Co2O3杂质相的产生,而且薄膜磁矩较大.紫外-可见光谱也表明,薄膜中Co2 取代了ZnO中Zn2 的位置.