Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition technique on n-type Si substrate have been investigated as a function of temperature using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 80-320 K by steps of 20 K. The basic diode parameters such as ideality factor (n) and barrier height (Φ_b) were consequently extracted from the electrical measurements. It has been seen that the ideality factor increased and the barrier height decreased with decreasing temperature, when the I-V characteristics were analyzed on the basis of the thermionic emission (TE) theory. The abnormal temperature dependence of the Φ_b and n and is explained by invoking two sets of Gaussian distribution of barrier heights at 320-200 K, and 180-80 K. The double Gaussian distribution analysis of the temperature-dependent I-V characteristics of the Cr/n-type Si Schottky contacts gave the mean barrier heights of 0.910 and 0.693 eV and standard deviations (σ_s) of 109 mV and 72 mV, respectively. Then, these values of the mean barrier height have been confirmed with the modified ln(I₀/T²) − q²/2k²T² versus 1/T plot which belongs the two temperature regions.     

Electrical and optical properties of tantalum oxide thin films prepared by reactive magnetron sputtering

Tantalum oxide thin films were prepared by using reactive dc magnetron sputtering in the mixed atmosphere of Ar and O₂ with various flow ratios. The structure and O/Ta atom ratio of the thin films were analyzed by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). The optical and dielectric properties of the Ta₂O₅ thin films were investigated by using ultraviolet-visible spectra, spectral ellipsometry and dielectric spectra. The results reveal that the structure of the samples changes from the amorphous phase to the β-Ta₂O₅ phase after annealing at 900 °C. The XPS analysis showed that the atomic ratio of O and Ta atom is a stoichiometric ratio of 2.50 for the sample deposited at Ar:O₂ = 4:1. The refractive index of the thin films is 2.11 within the wavelength range 300-1000 nm. The dielectric constants and loss tangents of the Ta₂O₅ thin films decrease with the increase of measurement frequency. The leakage current density of the Ta₂O₅ thin films decreases and the breakdown strength increases with the increase of Ar:O₂ flow ratios during deposition.     

电沉积制备的两种形貌Sn薄膜锂离子嵌入电极性能的比较

用电沉积方法在Cu集流体上分别制备出用于锂离子电池负极材料的密集细粒状(＜0.5 μm)和分散粗粒状(≈3 μm)两种Sn薄膜电极.用X射线衍射、扫描电镜、循环伏安及充、放电实验研究比较了两电极的组织与性能.结果表明,在氟硼酸盐溶液中使用以醛类为主的复合添加剂,在静止条件下可制得细粒Sn薄膜电极,在搅拌条件下可制得粗粒Sn薄膜电极;细粒Sn薄膜电极比粗粒Sn薄膜电极具有较优的初始嵌锂容量和循环稳定性:细粒Sn薄膜电极首次放电比容量达到787 mA·h/g,40次循环时放电比容量仍保持在630 mA·h/g;而粗粒Sn薄膜电极首次放电比容量只有576 mA·h/g,至20次循环放电比容量降至150 mA·h/g.     

X-ray diffraction measurement of residual stress and crystal orientation in Au/NiCr/Ta films prepared by plating

Au/NiCr/Ta films were prepared by plating and then annealed at 400 °C in Ar gas for an hour. The Au diffraction peak positions including incidence angles 0°, 15°, 30°, and 45° were measured by a glancing incidence X-ray diffraction (GIXRD) method. Residual stresses were then calculated using the sin²ψ method. The results indicate that the residual stress in the as-deposited Au/NiCr/Ta films was about 50 MPa, but was decreased down to − 5 MPa in average after samples annealing. The XRD analysis on crystal orientation shows that only the diffraction peaks of Au were found. There are no alloying phases in the plating Au film, and the interlayer of NiCr and Ta is too thin to be detected by the conventional XRD. The XRD also revealed that the films are highly textured with Au-(111) or a mixture of Au-(111) and Au-(200) orientation, and the (111)/(200) intensity ratio decreases after samples annealed.     

Structural and optical study of samarium doped cerium oxide thin films prepared by electron beam evaporation

Samarium doped cerium oxide films were grown on the glass substrate using e-beam deposition technique and then characterized using different techniques: X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy and UV-visible spectroscopy measurements. XRD analysis shows that all the films have cubic structure and the crystallite size decreases from 18 to 13 nm as the samarium (Sm) concentration increases. The FE-SEM images indicate that all the films have columnar growth. UV-visible measurements reflect that the films have high transparency (>80%) in the visible region. From the Raman spectra, we have observed two peaks at 466 and 565 cm⁻¹. The peak at 466 cm⁻¹ is assigned to the F_2g mode of cerium oxide (CeO₂) whereas the peak at 565 cm⁻¹ is due to the presence of the oxygen vacancies. The increase in the intensity of the peak at 565 cm⁻¹ indicates that the oxygen vacancy increases with Sm doping.     

Preparation of Fe/Cr doped SiO2 thin film on 304 stainless steel substrate originated from corrosion

Abstract

A Fe/Cr doped SiO₂ thin film which can improve the anticorrosion characteristic of materials was prepared on SUS304 stainless steel substrates by a modified hydrothermal method that constitutes a two part preparation process. The corrosion of stainless steel and the dissolution of silica from Na–Ca glass are simultaneously stimulated by an aqueous lithium bromide solution, and then a Fe/Cr doped SiO₂ thin film is coated onto the substrate. The Fe/Cr doped SiO₂ film was characterised by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and electron probe X-ray microanalyser. The results showed that the corrosion products and the silica are combined to form a Fe/Cr doped SiO₂ thin film. Furthermore, a chemical bond is formed between the silicon coating and the metal that improves the compactness and the adhesive property of the film. The anticorrosion characteristics of the film were measured by the methods of weight loss and electrochemical potentiodynamic polarisation, indicating that the Fe/Cr doped SiO₂ thin film can improve the anticorrosion performance of stainless steels effectively.     

铝表面化学气相沉积SiOx膜层的显微结构和性能

采用低温常压化学气相沉积(CVD)方法在铝基底上制备了硅氧化物陶瓷膜层.使用SEM、XPS、AFM、XRD、HRTEM和UV-VIS等技术分析了膜层的形貌、成分和组织结构特征,测试了膜层的孔隙率、光学和显微力学性能.结果表明:硅氧化物SiOx陶瓷膜层在铝基表面以气相反应沉积硅氧化物颗粒-颗粒嵌镶堆垛-融合长大的方式生成,大部分膜层为非晶态区域,其中包含少量局部有序区域,SiOx中的硅氧原子比为1:1.60～1:1.75,膜层疏松多孔,具有很高的紫外-可见光吸收率,膜层与基底具有很好的结合性.     

电沉积Nano-Al2O3/Ni-Co复合涂层的分形特征及润湿性（英文）

采用电沉积的方法在灰铸铁表面制备了Nano-Al2O3/Ni-Co复合镀层。与纯镍涂层相比,复合镀层表面平整、细致。运用分形原理计算了分形表面的结构参数,分形维数为1.3013。测量了接触角,其最大值达到105°。运用Cassie–Baxter方程解释了润湿性与分形结构的关系。结果表明:随着分形维数的变化润湿角而变化,但是接触角的变化与分形维数的比率并不呈现线性关系。     

Adhesion characteristics of copper thin film deposited on PET substrate by electron cyclotron resonance-metal organic chemical vapor deposition

The adhesion characteristics of Cu/C:H films on the pretreated PET (polyethylene terephthalate) substrate prepared by ECR-MOCVD with a periodic DC bias system were investigated in the aspect of surface energy, surface morphology, roughness, and adhesion force. For a chromo-sulfuric acid pretreatment, the surface roughness of PET substrate was increased up to a maximum value at 60 min of acid-soaking time, followed by a gradual decrease for longer acid-soaking times. The changes of surface energy by various pretreatment methods (such as Ar-ion implantation, O₂ plasma, chromo-sulfuric acid, and sandblasting) barely affected on the adhesion force because the pretreated PET was changed into hydrophobic surface through ECR-plasma polymerization of hfac (1,1,1,5,5,5-hexafluoro-2,4-pentandione) ligand of copper precursor. The acid pretreatment followed by ECR-deposition was confirmed as an effective method for the good adhesion of copper thin film on PET substrate at room temperature. The adhesion force of deposited metallic films primarily depended on the surface roughness of the pretreated substrate, and there was no strong correlation between the surface energy of the pretreated PET and the adhesion force of deposited Cu/C:H films.     

Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition

A two-step plasma enhanced chemical vapor deposition procedure has been developed to produce high quality Si_xN_yH_z films for quantum cascade laser applications. The procedure consists in exposing the GaAs substrate to a controlled N₂ plasma previous to the silicon nitride film deposition. The pre-treatment causes the formation of a thin GaN film that passivates the GaAs wafer. The method has been optimized varying RF power, N₂ flow rate and process time of the pre-treatments and monitoring their effects on the resulting chemical composition and dielectric properties of the nitride overlayers, by means of infrared spectroscopy, X-ray photoelectron spectroscopy and electric characterizations. A narrow window in the pre-treatment RF power, N₂ flux and time values, improves the composition, structural and dielectric properties of the silicon nitride overlayers. The best result has been found depositing the silicon nitride films on GaAs wafer after 2 min of N₂ plasma treatment with a power of 20 W and a 50 cm³/min flow rate.     

不同基体材料TD法盐浴渗钒层的组织及硬度

通过对45、T10、T12、W6Mo5Cr4V2、GCr15、Cr12MoV钢六种不同的基体进行盐浴渗钒,并对渗钒层的组织、厚度、成分和硬度进行测试比较。结果表明,基体化学成分对覆层的厚度、成分和硬度均有影响。基体中的固溶碳含量能促进覆层的生长,增加覆层厚度,提高覆层中的C/V浓度比,改善覆层硬度。而且,对覆层的能谱分析结果表明在碳素钢基体上的覆层中只含有C、V、Fe三种元素,而在合金钢基体上的覆层中还探测到了少量的来自基体的合金元素,这些合金元素向覆层中的扩散可以显著提高覆层的显微硬度。     

XPS study of BZT thin film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition

Ferroelectric materials were widely applied for actuators and sensors. Barium zirconate titanate Ba（Zr0.25Ti0.75）O3 thin film was grown on Pt/Ti/SiOdSi（100） substrates by pulsed laser deposition. Structure and surface morphology of the thin film were studied by X-ray diffractometry （XRD） and scan electronic microscopy （SEM）. The composition and chemical state near the film surface were obtained by X-ray photoelectron spectroscopy （XPS）. On the sample surface, O 1 s spectra can be assigned to those from the lattice and surface adsorbed oxygen ions, while Cls only result from surface contamination. The result shows that only one chemical state is found for each spectrum of Ba 3d, Zr 3d and Ti 2p photoelectron in the BZT thin film.     

Effects of thickness and rf plasma oxidizing on structural and optical properties of SiOxNy thin films

SiO_xN_y thin films were prepared by electron beam evaporation on microscopic glasses and titanium substrates held at room temperature. The effects of thickness and rf plasma oxidizing power/time on structural and optical properties of SiO_xN_y thin films were examined. The experimental results indicated that the thickness affects the structural and optical properties of SiO_xN_y significantly. All the examined films with different thicknesses designated the presence of the hexagonal Si₃N₄ phase. As thickness changed the preferred orientation of hexagonal Si₃N₄ phase is changed. A decrease in transmittance and the optical band gap along with an increase in refractive index are observed with increasing the film thickness. The rf plasma oxidizing power/time also affects the structural and optical properties of SiO_xN_y significantly. The rf plasma treatment processes caused amorphization to the SiO_xN_y films. Slight increase in optical band gap values was observed with increasing rf power/time. Substantial increase in the refractive index, which could be attractive for optoelectronics applications, was obtained at moderate rf plasma processing powers/times.     

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO (AZO) thin films were deposited on glass substrates by rf-sputtering at room temperature. The effects of substrate rotation speed (ω_S) on the morphological, structural, optical and electrical properties were investigated. SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation. AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one, leading to smaller grain sizes. XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis. The average optical transmittance was above 90% in UV-Vis region. The lowest resistivity value (8.5×10^?3 Ω·cm) was achieved at ω_S=0 r/min, with a carrier concentration of 1.8×10²⁰ cm^?3, and a Hall mobility of 4.19 cm²/(V·s). For all other samples, the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity. These results indicate that the morphology, structure, optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Measurement of residual stresses by X-ray diffraction techniques in MoN and Mo2N coatings deposited by arc PVD on high-speed steel substrate

Polycrystalline MoN and Mo₂N films have promising physical and mechanical properties, which made them candidates for wear- and corrosion-resistant coatings and diffusion barriers in microelectronics. The residual stresses in MoN and Mo₂N films consist of thermal and growth stresses or intrinsic stress generated during deposition. Residual stresses in the MoN and Mo₂N coatings deposited by arc PVD techniques on HSS substrate were measured by XRD using the Rocking and the Fixed Incidence Multiplane (FIM) techniques. Residual stresses measured by both techniques in Mo₂N (face center cubic, f.c.c.) and in MoN (hexagonal) films were about 5 and 10 GPa (compressive), respectively. These results indicated that residual stresses in the MoN film was two times greater than the residual stresses in the Mo₂N film.     

Influence of SiO2 nano-particles on microstructures and properties of Ni-W-P/CeO2-SiO2 composites prepared by pulse electrodeposition

Ni-W-P base composites containing CeO2 and SiO2 nano-particles were prepared on common carbon steel surface by pulse co-deposition of Ni, W, P, CeO2 and SiO2 nano-particles. The influence of SiO2 concentrations in bath on microstructures and properties of Ni-W-P/CeO2-SiO2 composites was studied, and the characteristics were assessed by chemical compositions, element distribution, surface morphologies, deposition rate and microhardness. The results indicate that when SiO2 concentration in bath is controlled at 20 g/L, the composites possess the fastest deposition rate, the highest microhardness, compact microstructures, smaller crystallite sizes and uniform distribution of W, P, Ce and Si within Ni-W-P matrix metal. Increasing SiO2 concentration in bath from 10 to 20 g/L leads to the refinement in grain size and the inhomogeneity of microstructures. While when SiO2 concentration is increased to 30 g/L, the crystallite sizes increase again and some bosses with nodulation shape appear on the surface of composites.     

Ti-6Al-4V表面ZrO_2/TiO_2微弧氧化复合陶瓷层的生长特性

研究了Ti-6Al-4V表面ZrO2/TiO2复合陶瓷层的生长规律。采用SEM和XRD分析了氧化时间对陶瓷层的厚度、表面和截面形貌、元素分布和相组成的影响。结果表明:膜层呈现出先快后慢最后趋于平稳的生长动力学,最终膜层厚度44μm。陶瓷膜表面分布着富Zr的陶瓷颗粒,这是由于氧化膜外层的火花放电形成的特征结构。膜层由m-ZrO2、Rutile-TiO2和ZrTiO4组成,Zr元素含量最高可达50.47%。随着氧化时间的增长,膜层表面的Zr含量逐渐降低,m-ZrO2逐渐减少而Rutile-TiO2逐渐增多,并且出现了新相Ti2ZrO6。     

H13钢等离子堆焊Ni60A/Cr3C2覆层的磨损及热疲劳性能

采用等离子堆焊技术在H13钢基体表面上制备了Ni60A/Cr₃C₂堆焊覆层,研究了覆层的磨损行为和热疲劳性能。在600 ℃下销盘试验的结果表明,镍基碳化铬复合覆层的耐磨性是Ni60A堆焊覆层的2.8倍和基材H13钢的11.6倍。镍基覆层可以显著降低H13钢的摩擦因数,加入碳化铬则会削弱覆层的摩擦性能。随着磨损的进行,主要磨损机理从氧化磨损演变为磨粒磨损和粘着磨损。在800 ℃到室温下的热疲劳测试结果表明,镍基碳化铬复合覆层在48个热循环后疲劳裂纹达到200 μm,早于镍基覆层的62次。这说明高温氧化促进热疲劳裂纹的产生。碳化铬增强相从镍基上剥离,导致镍基复合覆层热疲劳性能下降。