Synthesis of Ti3SiC2 by infiltration of molten Si

High-purity Ti₃SiC₂ compounds have been fabricated by infiltration of molten Si into a precursor, a partially sintered TiC_x (x = 0.67) preform. The Si source and the TiC_x preform were placed side by side on carbon cloth, and the system was heated to 1550 °C. Molten Si infiltrated the preform through the carbon cloth, and a direct reaction between TiC_x and molten Si immediately occurred at the reaction temperature to yield pure Ti₃SiC₂. We could observe phase formation and the microstructure of the bulk products with time, which were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS). Pure Ti₃SiC₂ compounds were formed on the exterior of the TiC_x preform at 1550 °C when the sintered TiC_x:Si ingot molar ratio was 3:1.4. At 1550 °C, no other minor phases were detected for any of the sintering time ranges.     

Rapid fabrication of the Ti3SiC2 bonded diamond composite by spark plasma sintering

A mixture of Ti/Si/TiC/diamond powders was employed to fabricate the Ti₃SiC₂ bonded diamond composite using the spark plasma sintering-reactive synthesis method. The addition of diamond does not inhibit the synthesis of Ti₃SiC₂ in the sintered product. In the matrix Ti₃SiC₂ grains developed lamellar morphology with an average length size of 5-10 μm. Ti₃SiC₂ matrix displays good pullout strength with diamond, and the Ti₃SiC₂ bonded diamond material exhibits good wear resistance.     

Combustion synthesis of Ti3Si1−xAlxC2 solid solutions from TiC-, SiC-, and Al4C3-containing powder compacts

Preparation of the Ti₃Si_1−xAl_xC₂ solid solution with x = 0.2-0.8 was investigated by self-propagating high-temperature synthesis (SHS) using TiC-, SiC-, and Al₄C₃-containing powder compacts. Due to the variation of reaction exothermicity with sample stoichiometry, the combustion temperature and reaction front velocity decreased with increasing Al content of Ti₃Si_1−xAl_xC₂ for the TiC- and Al₄C₃-added samples, but increased for the samples with SiC. In contrast to the formation of Ti₃(Si,Al)C₂ as the dominant phase for the TiC- and SiC-added samples, TiC was identified as the major constituent in the final products of samples adopting Al₄C₃. In addition, the evolution of Ti₃(Si,Al)C₂ was improved by increasing the Al content of the TiC- and SiC-added powder compacts, but deteriorated considerably upon the increase of Al₄C₃ in the Al₄C₃-containing sample.     

Influence of pre-oxidation on the hot corrosion of Ti3SiC2 in the mixture of Na2SO4-NaCl melts

Polycrystalline Ti₃SiC₂ suffered from serious hot corrosion attack in the mixture of 75wt.%Na₂SO₄ + 25wt.%NaCl melts at 850 °C. In order to improve the hot corrosion resistance of this material, pre-oxidation treatment was conducted at 1200 °C in air for 2 h. A duplex oxide scale with an outer layer of TiO₂ and an inner layer of a mixture of TiO₂ and SiO₂ was formed during the pre-oxidation. Because the outer oxide layer of the pre-oxidation treated specimens could inhibit hot corrosion process, they exhibited good hot corrosion resistance in the mixture of 75wt.%Na₂SO₄ + 25wt.%NaCl melts at 850 °C for 50 h. However, during the hot corrosion the outer layer of TiO₂ would degrade gradually. Once the outer layer damaged, the hot corrosion rate increased sharply, the corrosion behavior was similar to Ti₃SiC₂ corroded under the same conditions. The microstructure and phase compositions of the hot corrosion samples were investigated by SEM/EDS and XRD.     

Low-temperature fabrication of high purity Ti3SiC2

In this study, we fabricated high purity Ti₃SiC₂ ceramic by mechanical alloying (MA) and spark plasma sintering (SPS), and investigated the effect of trace amount of Al on these processes. Our results show that addition of proper amount of Al significantly increases the purity of Ti₃SiC₂ in the MA and subsequent SPS products, and remarkably reduces the sintering temperature for Ti₃SiC₂. Ti₃SiC₂ sintered compact with a purity of 96.5 wt% was obtained by 10 h of MA and subsequent SPS from a starting mixture composed of n(Ti):n(Si):n(Al):n(c) = 3:1:0.2:2 at 850 °C. At 1100 °C, Ti₃SiC₂ with a purity of 99.3 wt% and a relative density of 98.9% was obtained.     

Structural investigation of thin films of Ti1−xAlxN ternary nitrides using Ti K-edge X-ray absorption fine structure

Thin films of Ti_1−xAl_xN nitrides were prepared over a large range of composition (0 ≤ x < 1) on Si substrates using nitrogen reactive magnetron sputtering from composite metallic targets. Ti K-edge X-ray Absorption Spectroscopy experiments were carried for a better understanding of the local structure. The evolution of the intensity of Ti K-edge pre-edge peak gives evidence of the incorporation of Ti in hexagonal lattice of AlN for Al-rich films and in cubic lattice of TiN for Ti-rich films. An attempt to determine their atomic structure by combining X-ray diffraction and Ti K-edge Extended X-ray Absorption Fine Structure is presented. The evolution of the nearest neighbour and next-nearest neighbour distances depending on the composition is presented and discussed together the cubic and hexagonal lattice parameters. A possible contribution of amorphous nitrides is suggested.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Investigation of formation mechanism of Ti3SiC2 by self-propagating high-temperature synthesis

In this study, 3Ti/Si/2C powders were used as raw materials to synthesize Ti₃SiC₂ by self-propagating high-temperature synthesis (SHS). The phase compositions and morphological characteristics of Ti₃SiC₂, as well as the effects of grain granularity on Ti₃SiC₂ synthesis, were investigated. The reaction paths and dynamic behaviors of the synthesized Ti₃SiC₂ were studied using combustion front quenching. The results showed that the liquid phase of Ti–Si was formed during SHS. The mechanism for TiC formation exhibited a great effect on Ti₃SiC₂ synthesis. The proposed reaction mechanism for the synthesis of Ti₃SiC₂ by SHS suggested that Ti₃SiC₂ might be formed from the liquid phase of Ti–Si and the solid phase of TiC.     

The corrosion behavior of plasma sprayed Fe2Al5 coating in molten Zn

Aluminum coating was plasma sprayed on Fe-0.14-0.22 wt.% C steel substrate, and heat diffusion treatment at 923 °C for 4 h was preformed to the aluminum coating to form Fe₂Al₅ inter-metallic compound coating. The corrosion mechanism of the Fe₂Al₅ coating in molten zinc was investigated. SEM and EDS analysis results show that the corrosion process of the Fe₂Al₅ layer in molten zinc is as follows: Fe₂Al₅ → Fe₂Al₅Zn_x (η) → η + L(liquid phase) → L + η + δ(FeZn₇) → L + δ → L. The η phase and the eutectic structure (η + δ) prevent the diffusion of zinc atoms efficiently. Therefore the Fe₂Al₅ coating delays the reaction between the substrate and molten zinc, promoting the corrosion resistance of the substrate.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

Charge compensation, electrical and dielectric behavior of lanthanum doped CaCu3Ti4O12

Mechanism of charge compensation on lanthanum, (La³⁺) substitution on Ca site in calcium copper titanate (CaCu₃Ti₄O₁₂), and its effect on resulting electrical and dielectric properties has been studied in the present investigation. For this purpose samples were prepared according to two stoichiometries viz. La_xCa_(1−3x/2)Cu₃Ti₄O₁₂ (x ≤ 0.09) and La_xCa_(1−x)Cu₃Ti₄O₁₂ (x = 0.03) by solid state ceramic route. The former represents ionic compensation while the later is in accordance with electronic compensation. Nature of charge carriers is identified by measuring Seebeck coefficient which is found to be negative in the entire range of measurement. In order to understand the mechanism of conduction, ac conductivity is measured as a function of temperature and frequency. Space charge polarization is the dominant polarization mechanism phenomenon at low frequency and high temperature while orientation polarization dominates at low temperature and high frequency. Impedance analysis confirms the formation of internal barrier layers which is responsible for high dielectric constant in these samples.     

Corrosion behavior of select MAX phases in NaOH, HCl and H2SO4

In this paper we report on the electrochemical corrosion of select MAX phases, namely Ti₂AlC, (Ti,Nb)₂AlC, V₂AlC, V₂GeC, Cr₂AlC, Ti₂AlN, Ti₄AlN₃, Ti₃SiC₂ and Ti₃GeC₂ in 1 M NaOH, 1 M HCl and 1 M H₂SO₄ solutions. Polarization characteristics recorded in 1 M NaOH show that V₂AlC, V₂GeC and Cr₂AlC undergo active dissolution at potentials more positive than the corrosion potential, while Ti₂AlC, (Ti,Nb)₂AlC, Ti₃SiC₂ and Ti₃GeC₂ passivate. In the 1 M HCl solutions, Ti₂AlC, V₂AlC and V₂GeC actively dissolve; Ti₃SiC₂ and Ti₃GeC₂ passivate. Depending on potential, (Ti,Nb)₂AlC and Cr₂AlC showed trans-passive behavior. In 1 M H₂SO₄ solutions, Ti₂AlC, (Ti,Nb)₂AlC, Ti₃SiC₂ and Ti₃GeC₂ passivate, V₂AlC and V₂GeC show active dissolution, while Cr₂AlC exhibits trans-passive behavior. Ti₂AlN and Ti₄AlN₃ were passive in all solutions except in 1 M HCl, where Ti₂AlN showed trans-passive behavior. Given that the corrosion behavior of (Ti,Nb)₂AlC is unlike either Ti or Nb, the behavior of the former cannot be predicted from that of the latter.     

Rhombohedral-monoclinic phase transition related to grain orientation in Zr-rich Pb(ZrxTi1−x)O3 thin films

Pb(Zr_xTi_1−x)O₃ thin films with mixed orientations of (1 1 1) and (1 0 0) were prepared on Pt/Ti/SiO₂/Si substrate by sol-gel technique. The compositions of PZT thin films are chosen as x = 0.55 and x = 0.58. Both of the compositions are in the rhombohedral phase region of the Pb(Zr_xTi_1−x)O₃ phase diagram, but the former is near the monoclinic phase existence region, and the latter is far from the monoclinic phase existence region. Rhombohedral-monoclinic phase transitions are reported in both of the thin films. The results show that the phase transition is related to the grain orientation. Phase transitions in the films are clearly identified: rhombohedral phase transforms to M_B phase in (1 1 1)-oriented grains, and rhombohedral phase transforms to M_A phase in (1 0 0)-oriented grains. The remnant polarization is determined by the content of (1 1 1)-oriented grains. It is shown that the remnant polarization is greater in the film with higher content of (1 1 1)-oriented grains.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Effects of oxygen content and heating rate on phase transition behavior in Bi2(V0.95Ti0.05)O5.475−x

The phase transition behavior of oxide-ion conductor Bi₂(V_0.95Ti_0.05)O_5.475−x, which has various thermal histories and sample forms, has been studied by means of differential scanning calorimetry. Thermogravimetric analysis revealed that the oxygen content per compositional formula varied with the applied thermal treatment, although no significant structural difference was observed by X-ray diffraction (XRD) analysis. The phase transition behavior from α_f to β_f and from β_f to γ_f, observed at a heating rate of 10 K min⁻¹, are markedly affected by the sample preparation. For example, the endothermic peak of the transition from α_f to β_f appeared at around 400 °C for quenched powder and at around 320 °C for powder cooled at 0.5 K min⁻¹. The trend of the transition temperatures can be qualitatively explained in terms of oxygen content, i.e., Bi₂(V_0.95Ti_0.05)O_5.475−x with less oxygen content exhibits the transition from α_f to β_f at a higher temperature and the transition from β_f to γ_f at a lower temperature. We confirmed the two types of transition behavior from α_f to β_f depending on heating rate of DSC and high-temperature X-ray diffraction (HT-XRD) analysis. At rapid heating rates of 10 and 40 K min⁻¹, α_f transformed to β_f directly. Meanwhile, at a slow heating rate of 2 K min⁻¹, the β_f precipitated from α_f because slow heating allowed the diffusion of Ti and oxygen vacancies induced by the aliovalent doping. This suggests that the small differences of atomic arrangement also affect the phase transition behavior because additional elements have preferable crystallographic sites in α_f and β_f.     

Preparation of Ti3AlC2 by mechanically activated sintering with Sn aids

The mechanically activated sintering process was adapted to synthesize Ti₃AlC₂ using 3Ti/Al/2C/0.05Sn powder mixtures. The result showed that the powders containing TiC, Ti₃AlC₂ and Ti₂AlC were obtained by mechanical alloying (MA) 3Ti/Al/2C powders. Addition of appropriate Sn reduced the content of Ti₂AlC and enhanced the synthesis of Ti₃AlC₂ significantly. The powders with highest content of Ti₃AlC₂ were obtained by MA 3Ti/Al/2C/0.05Sn powders. Through pressureless sintering the mechanical alloyed powders at 900–1100 °C for 2 h, the high purity Ti₃AlC₂ material with fine organization was produced.     

Investigation on temperature dependence of photoluminescence in Sr1.7Eu0.3MxCeO4.15+x/2 (M = Li, Na, K, x = 0, 0.3) red phosphors

The temperature-dependent luminescence of Sr_1.7Eu_0.3M_xCeO_4.15+x/2 (M = Li⁺, Na⁺, K⁺, x = 0, 0.3) samples was investigated and discussed in the temperature range from 303 to 573 K. It is found that the thermal quenching temperature of samples decreases with Li⁺-/Na⁺-doping but increases with the incorporation of K⁺. We suggest that these observations are resulted from two factors. One is that the incorporation of Li⁺/Na⁺/K⁺ ions reduces the strength of potential field at the O²⁻ sites, and then results in a red-shift of the Eu-O charge transfer band. The other is that Δr expands with Li⁺-/Na⁺-doping but shrinks with K⁺-doping. We consider that it is a feasible way to adjust the temperature-dependent luminescence properties of materials by introducing appropriate impurities.     

Improving the surface hardness and wear resistance of Ti3SiC2 by boronizing treatment

In order to modify surface properties of Ti₃SiC₂, boronizing was carried out through powder pack cementation in the 1100-1400 °C temperature range. After boronizing treatment, one mixture layer, composed of TiB₂ and β-SiC, forms on the surface of Ti₃SiC₂. The growth of the coating is processed by inward diffusion of boron and obeys a linear rule. The boronizing increases the hardness of Ti₃SiC₂ from 3.7 GPa to a maximal 9.3 GPa and also significantly improves its wear resistance.     

Reaction diffusion in continuous SiC fiber reinforced Ti matrix composite

SiC continuous fiber-reinforced pure Ti(TA1)matrix composites were fabricated by a vacuum hot pressing(VHP)methodand then heat-treated in vacuum under different conditions.The interfacial reaction and the formation of interfacial phases werestudied by using SEM,EDS and XRD.The results show that there exists reaction diffusion at the interface of SiC fibers and Timatrix,and the concentration fluctuation of reaction elements such as C,Ti and Si appears in interfacial reaction layer.The interfacialreaction products are identified as Ti3SiC2,TiCx and Ti5Si3Cx.At the beginning of interfacial reaction,the interfacial reactionproducts are TiCx and Ti5Si3Cx.Along with the interfacial reaction diffusion,Ti3SiC2 and Ti5Si3Cx single-phase zones come forth inturn adjacent to SiC fibers,and the TiC Ti5Si3Cx double-phase zone appears adjacent to Ti matrix,which forms discontinuousconcentric rings by turns around the fibers.The formed interfacial phases are to be Ti3SiC2,Ti5Si3Cx and TiCx Ti5Si3Cx from SiCfiber to Ti matrix.The interfacial reaction layer growth is controlled by diffusion and follows a role of parabolic rate,and theactivation energy(Qk)and(k0)of SiC/TA1 are 252.163 kJ/mol and 7.34×10?3m/s1/2,respectively.     

Influence of titanium addition on the microstructure of the novel ferrous-based stainless steel

The microstructural characteristics of the Fe-9Al-30Mn-1C-5Ti (wt.%) alloy were determined by scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectrometry. The microstructure of the alloy was essentially a mixture of (γ + TiC_x + (α + B2 + DO₃)) phases during solution treatment between 950 °C and 1150 °C. The TiC_x carbide had a face-center-cubic structure with a lattice parameter a of 0.432 nm. When the as-quenched alloy was subjected to aging treatment at temperatures of 450-850 °C, the following microstructural transformation occurred: (γ + TiC_x + κ + (α + DO₃)) → (γ + TiC_x + κ + (α + B2 + DO₃ + TiC_x)) → (γ + TiC_x + κ + κ′ + (α + B2 + DO₃)) → (γ + TiC_x + (α + B2 + DO₃)). Addition of Ti promotes the formation of the α phase at high temperatures.