Rhombohedral-monoclinic phase transition related to grain orientation in Zr-rich Pb(ZrxTi1−x)O3 thin films

Pb(Zr_xTi_1−x)O₃ thin films with mixed orientations of (1 1 1) and (1 0 0) were prepared on Pt/Ti/SiO₂/Si substrate by sol-gel technique. The compositions of PZT thin films are chosen as x = 0.55 and x = 0.58. Both of the compositions are in the rhombohedral phase region of the Pb(Zr_xTi_1−x)O₃ phase diagram, but the former is near the monoclinic phase existence region, and the latter is far from the monoclinic phase existence region. Rhombohedral-monoclinic phase transitions are reported in both of the thin films. The results show that the phase transition is related to the grain orientation. Phase transitions in the films are clearly identified: rhombohedral phase transforms to M_B phase in (1 1 1)-oriented grains, and rhombohedral phase transforms to M_A phase in (1 0 0)-oriented grains. The remnant polarization is determined by the content of (1 1 1)-oriented grains. It is shown that the remnant polarization is greater in the film with higher content of (1 1 1)-oriented grains.     

Preparation and characterisation of PZT films by RF-magnetron sputtering

Stoichiometric films were prepared by rf-magnetron sputtering from a Pb(Zr_0.54Ti_0.46)O₃ ceramic target onto Au-electroded substrates of alumina. During deposition the substrate holder was kept at a temperature of 300 °C. Post-deposition heat treatment in air at 650 °C was carried to promote the full crystallization and to result in pure perovskite PZT phase. SEM-EDX measurements for the films were performed both on surface and on cross-section. The impedance spectroscopy data demonstrates that the films have rather good dielectric properties and low losses. The recorded P-E loops prove their macroscopic ferroelectric characteristics, while piezoresponse force microscopy experiments confirm a nanoscale switching mechanism based on domain nucleation-growth.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Heat treatment induced phase separation and phase transformation of ZrNxOy thin films deposited by ion plating

Nanocrystalline ZrN_xO_y thin films were deposited on p-type Si (100) substrates using hollow cathode discharge ion-plating (HCD-IP) and the films were annealed at 700 and 900 °C in the controlled atmosphere. The purpose of this study was to investigate the phase separation, phase transformation and the accompanying change of properties of the heat-treated ZrN_xO_y films deposited by ion plating. With the increase of oxygen flow rate ranging from 0 to 10 sccm, the primary phase of the as-deposited films evolved from ZrN to nearly amorphous structure and further to monoclinic ZrO₂ (m-ZrO₂). After heat treatment at 700 and 900 °C, phase transformation occurred in the samples deposited at 8 and 10 sccm O₂, where a stoichiometric crystalline Zr₂ON₂ was found to derive from m-ZrO₂ with dissolving nitrogen (m-ZrO₂(N)). The hardness of the ZrN_xO_y thin films could be correlated to the fraction of Zr₂ON₂ + m-ZrO₂. The film hardness decreased significantly as the fraction of ZrO₂ + Zr₂ON₂ exceeded ~ 60%, which was due to phase transition by increasing oxygen flow rate or phase transformation induced by heat treatment. The phase separation of m-ZrO₂ from ZrN with dissolving oxygen (ZrN(O)) may relieve the residual stress of the ZrN_xO_y specimens deposited at 5 and 8 sccm O₂, while direct formation of m-ZrO₂ increased the stress of the film deposited at 10 sccm O₂. On the other hand, the phase transformation from m-ZrO₂(N) to Zr₂ON₂ by heat treatment at both 700 and 900 °C may effectively relieve the residual stress of the ZrN_xO_y films.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Fatigue characteristic and pyroelectric properties of highly (1 1 1)-oriented Nb doped Pb(Zr0.2,Ti0.8)O3 thin films with Pb0.8La0.1Ca0.1Ti0.975O3 seed layer prepared by a sol-gel route

A series of highly (1 1 1)-oriented tetragonal Nb-doped Pb(Zr_0.2Ti_0.8)O₃ (PNZT) films with and without Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ (PLCT) seed layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si substrates by sol-gel processing; it was found the pyroelectric properties and fatigue resistance characteristics of PNZT films could be improved by introducing PLCT seed layer. Because the rough surface structures of 5 nm-thick PLCT seed layer can offer nucleation sites to reduce activation energy for the crystallization and lead to the polarization response easily, a large pyroelectric coefficient (460 μC/(m² K)) and a high figure-of-merit (F_d = 161 μC/(m² K)) was obtained for PLCT/PNZT/PLCT structure film. It was also found that PLCT seed layer could act as a capacitive interface layer possibly compensating for the vacancy-type defects from PNZT film effectively, which results in enhanced fatigue resistance characteristics of PLCT/PNZT/PLCT structure film.     

Enhanced electrical properties of Pb(Zr0.80Ti0.20)O3 thick films prepared by a modified sol-gel technique

Ferroelectric Pb(Zr_0.80Ti_0.20)O₃ thick films (5.0 μm) were grown on Pt/Ti/SiO₂/Si substrates by a modified sol-gel technique. In this process, PZT nanopowders were prepared via sol-gel, and then these powders were dispersed in a precursor sol to form a slurry. Slurry and PZT precursor solution were spin-coated alternately to form uniform and crack-free thick films. The microstructure and electrical properties of the PZT thick films were investigated. The results in this work show that the PZT thick films possess typical polycrystalline perovskite structures, good pyroelectric coefficient (8.0 × 10^− 8C/cm² K), high remnant polarization (30 μC/cm²), and low coercive field (50 kV/cm).     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Sol-gel synthesis and electrochemical performance of Li4Ti5O12/graphene composite anode for lithium-ion batteries

Li₄Ti₅O₁₂/graphene composite was prepared by a facile sol-gel method. The lattice structure and morphology of the composite were investigated by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The electrochemical performances of the electrodes have been investigated compared with the pristine Li₄Ti₅O₁₂ synthesized by a similar route. The Li₄Ti₅O₁₂/graphene composite presents a higher capacity and better cycling performance than Li₄Ti₅O₁₂ at the cutoff of 2.5-1.0 V, especially at high current rate. The excellent electrochemical performance of Li₄Ti₅O₁₂/graphene electrode could be attributed to the improvement of electronic conductivity from the graphene sheets. When discharged to 0 V, the Li₄Ti₅O₁₂/graphene composite exhibited a quite high capacity over 274 mAh g⁻¹ below 1.0 V, which was quite beneficial for not only the high energy density but also the safety characteristic of lithium-ion batteries.     

Effects of lanthanum doping on the preferred orientation, phase structure and electrical properties of sol-gel derived Pb1-3x/2Lax (Zr0.6Ti0.4)O3 thin films

Pb_1-3x/2La_x (Zr_0.6Ti_0.4)O₃ thin films (0 ≤ x ≤ 0.08) were prepared on the Pt (1 1 1)/Ti/SiO₂/Si (1 0 0) substrates by a sol-gel method. The morphology, preferred orientation, phase structure, dielectric and ferroelectric properties of the films have been investigated. Our results show that lanthanum doping is favorable to enhance crystalline and obtain (1 0 0)-preferred orientation of the films. Meanwhile, it is suggested that the films undergo a structure change from “rhombohedral” phase to monoclinic phase as the lanthanum-doped content is increased to x ≈ 0.05. Results of dielectric properties and ferroelectric properties indicate that lanthanum doping contributes to improve film dielectric constant and dielectric loss while it brings about a striking decrease in remnant polarization value. Possible explanations for the variations of electrical properties have been discussed in terms of preferred orientation, phase structure and large lattice distortion.     

Preferential grain growth and improved fatigue endurance in Sr substituted PZT thin films on Pt(1 1 1)/TiOx/SiO2/Si substrates

Pb(Zr_0.5Ti_0.5)O₃ and (Pb_0.9Sr_0.1)(Zr_0.5Ti_0.5)O₃ thin films were grown on Pt/TiO_x/SiO₂/Si substrates by chemical solution deposition. 10% Sr substituted PZT film showed high degree of (0 0 1) type preferential grain growth. Surface morphology revealed a clear correlation between preferred grain orientation and grain size. Room temperature dielectric constant was 1200 and 700 for the PZT and PSZT films, respectively. Dielectric loss reduced with Sr substitution. PZT film showed severe fatigue, and hence the polarization reduced to 20% of the initial value (24 μC/cm²) after 10⁸ cycles where as PSZT showed less fatigue, 75% of the initial polarization (12 μC/cm²) was retained after 10⁸ switching cycles.     

Structural, morphological and optical properties of Bi2−xSbxSe3 thin films grown by electrodeposition

Ternary single-phase Bi_2−xSb_xSe₃ alloy thin films were synthesized onto Au(1 1 1) substrates from an aqueous solution containing Bi(NO₃)₃, SbCl₃, and SeO₂ at room temperature for the first time via the electrodeposition technique. The electrodeposition of the thin films was studied using cyclic voltammetry, compositional, structural, optical measurements and surface morphology. It was found that the thin films with different stoichiometry can be obtained by controlling the electrolyte composition. The as-deposited films were crystallized in the preferential orientation along the (0 1 5) plane. The SEM investigations show that the film growth proceeds via nucleation, growth of film layer and formation of spherical particles on the film layer. The particle size and shape of Bi_2−xSb_xSe₃ films could be changed by tuning the electrolyte composition. The optical absorption spectra suggest that the band gap of this alloy varied from 0.24 to 0.38 eV with increasing Sb content from x = 0 to x = 0.2.     

Study on nanocrystalline Cr2O3 films deposited by arc ion plating: I. composition, morphology, and microstructure analysis

Nanocrystalline Cr₂O₃ thin films were deposited on silicon wafers with (100) orientation by arc ion plating (AIP) technique at various negative bias voltages. By virtue of X-ray diffraction analysis, scanning electron microscope, and high-resolution transmission electron microscope, the influence of substrate bias voltage on the film growth process, microstructure, and characteristics was investigated systematically, including the phase constituents, grain size, lattice constant, chemical compositions, as well as surface and cross-section morphologies. With increasing the bias voltage, the grain size and lattice constant of AIP Cr₂O₃ films first decreased slightly, and then increased gradually again. Both reached the minimum (35 nm and 13.57 Å) when the bias voltage was − 100 V. However, the bias voltage had little effect on the phase constituents and chemical compositions of AIP Cr₂O₃ films. During the film growth process, the surfaces of Cr₂O₃ films were getting smoother with the negative bias voltage increase, in the meantime, their microstructures evolved from coarse columnar grains to fine columnar grains, short columnar recrystallized grains, and fine columnar grains again.     

Enhanced dielectric and piezoelectric response in PZT superlattice-like films by leveraging spontaneous Zr/Ti gradient formation

Spontaneous Zr/Ti gradient formation during crystallization in sol-gel-processed Pb(Zr_xTi_1−x)O₃ films is used to prepare superlattice-like (SL), highly (1 0 0)-oriented thin films on Pt/Ti/SiO₂/Si substrates. SLs with stacking periodicity ranging from 13 up to 60 nm are synthesized with compositional gradient normal to the film surface and composition centered at x ≈ 0.53. X-ray diffraction (XRD) shows high order satellite peaks and no secondary phases. XRD structural refinement, along with XPS depth profile chemical analysis, reveals that the crystal structure alternates between rhombohedral and in-plane polarized tetragonal phases, effectively corresponding to “artificially created” phase boundaries. SL films have ∼45% and ∼20% higher d_33,f piezoelectric coefficient and dielectric permittivity, respectively, with respect to compositional-gradient-free films of similar thickness, possibly due to enhanced reorientation of electrical dipoles and higher extrinsic contributions due to the motion of the “artificially created” phase boundaries in SL films. Dielectric nonlinear studies indicate a higher amount of extrinsic contributions to the dielectric response in SL and gradient-enhanced films than in conventional films of similar average composition. This processing method provides a simple chemical route to create thin ferroelectric films with enhanced dielectric and piezoelectric properties suitable for a range of miniaturized applications.     

Phase transition and mechanical properties of ZrNxOy thin films on AISI 304 stainless steel

ZrN_xO_y thin films were deposited on AISI 304 stainless steel (304SS) substrates by reactive magnetron sputtering. The specimens were produced by sputtering a Zr target at 500 °C and the reactive gasses were N₂ and O₂ at various flow rates (ranging from 0 to 2 sccm). The purpose of this study was to investigate the effect of oxygen flow rate on the phase transition and accompanying mechanical properties of the ZrN_xO_y thin films. The oxygen contents of the thin films increased significantly with increasing oxygen flow rate. X-ray diffraction (XRD) revealed that the characteristics of the films can be divided into three zones according to the major phase with increasing oxygen content: Zone I (ZrN), Zone II (Zr₂ON₂) and Zone III (m-ZrO₂). The hardness of the ZrN_xO_y films decreased with increasing oxygen content due to the formation of the soft oxide phase. Modified XRD sin²ψ method was used to respectively measure the residual stresses of ZrN, Zr₂ON₂ and m-ZrO₂ phases. The results showed that the residual stress in ZrN was relieved as the oxygen content increased, and Zr₂ON₂ and m-ZrO₂ were the phases with lower residual stress. Compositional depth profiles indicated that there was a ZrO₂ interlayer near the film/substrates interface for all samples except the mononitride ZrN specimen. Contact angle was used as an index to assess the wettability of the film on substrate. The contact angles of ZrN, Zr₂ON₂ and m-ZrO₂ on stainless steel were indirectly measured using Owens-Wendt method. The results showed that ZrO₂ possessed the lowest wettability on 304SS among the three ZrN_xO_y phases, indicating that the ZrO₂ interlayer may account for the spallation of the ZrN_xO_y films after salt spray tests.     

Structural and electrical properties of Gd(Ni1/2Zr1/2)O3

The Gd(Ni_1/2Zr_1/2)O₃ (GNZ) ceramic is synthesized by the solid-state reaction technique. The X-ray diffraction pattern of the sample shows monoclinic phase at room temperature. The dielectric dispersion of the material is investigated in the temperature range from 303 K to 673 K and in the frequency range from 100 Hz to 1 MHz. The relaxation peak is observed in the frequency dependence of the loss tangent. The relaxation time at different temperatures is found to obey Arrhenius law having activation energy of 1.1 eV which indicates the hopping of ions at the lattice site and may be responsible for the dielectric relaxation of GNZ. The scaling behaviour of loss tangent suggests that the relaxation mechanism is temperature independent. The frequency dependent conductivity spectra follow the power law. In the impedance formalism, the Cole-Cole model is used to study the relaxation mechanism of GNZ.     

Structural investigation of thin films of Ti1−xAlxN ternary nitrides using Ti K-edge X-ray absorption fine structure

Thin films of Ti_1−xAl_xN nitrides were prepared over a large range of composition (0 ≤ x < 1) on Si substrates using nitrogen reactive magnetron sputtering from composite metallic targets. Ti K-edge X-ray Absorption Spectroscopy experiments were carried for a better understanding of the local structure. The evolution of the intensity of Ti K-edge pre-edge peak gives evidence of the incorporation of Ti in hexagonal lattice of AlN for Al-rich films and in cubic lattice of TiN for Ti-rich films. An attempt to determine their atomic structure by combining X-ray diffraction and Ti K-edge Extended X-ray Absorption Fine Structure is presented. The evolution of the nearest neighbour and next-nearest neighbour distances depending on the composition is presented and discussed together the cubic and hexagonal lattice parameters. A possible contribution of amorphous nitrides is suggested.     

Tunable dielectric properties of BaZr0.2Ti0.8O3-Mg2SiO4-MgO composite ceramics

BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites were prepared by a solid-state reaction method, and their dielectric and tunable characteristics were investigated for the potential application as microwave tunable materials. It is observed that the addition of Mg₂SiO₄-MgO into BaZr_0.2Ti_0.8O₃ form ferroelectric (BaZr_0.2Ti_0.8O₃)-dielectric (Mg₂SiO₄-MgO) composites. The dielectric constant and loss tangent of BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites have been reduced and the overall tunability is maintained at a sufficiently high level. An anomalous relation between dielectric constant and tunability was observed: with the increase of Mg₂SiO₄ content (>30 wt%), the dielectric constant of composite decreases and the tunability increases. The anomalous increased tunability can be attributed to redistribution of the electric field. BaZr_0.2Ti_0.8O₃-Mg₂SiO₄-MgO composites have tunability of 14.2-17.9% at 100 kHz under 2 kV/mm, indicating that it is a promising candidate material for tunable microwave applications requiring low dielectric constant.     

Synthesis of Ti3SiC2 by infiltration of molten Si

High-purity Ti₃SiC₂ compounds have been fabricated by infiltration of molten Si into a precursor, a partially sintered TiC_x (x = 0.67) preform. The Si source and the TiC_x preform were placed side by side on carbon cloth, and the system was heated to 1550 °C. Molten Si infiltrated the preform through the carbon cloth, and a direct reaction between TiC_x and molten Si immediately occurred at the reaction temperature to yield pure Ti₃SiC₂. We could observe phase formation and the microstructure of the bulk products with time, which were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS). Pure Ti₃SiC₂ compounds were formed on the exterior of the TiC_x preform at 1550 °C when the sintered TiC_x:Si ingot molar ratio was 3:1.4. At 1550 °C, no other minor phases were detected for any of the sintering time ranges.     

Reaction-sintering method for ultra-low loss (Mg0.95Co0.05)TiO3 ceramics

Microwave dielectric properties and microstructures of (Mg_0.95Co_0.05)TiO₃ ceramics prepared by a new sintering method (reaction-sintering method) were investigated. A pure phase of (Mg_0.95Co_0.05)TiO₃ was obtained by the new method and excellent dielectric properties were observed due to uniformities of the microstructure and the phase. In contrast, the secondary phase (Mg_0.95Co_0.05)Ti₂O₅ was observed in samples prepared by conventional sintering method. In order to study the influence of secondary phase on the microwave dielectric properties quantitatively, the weight fraction of (Mg_0.95Co_0.05)Ti₂O₅ was calculated on the basis of Rietveld refinement. The pore-free?_r values of specimens prepared by two different methods indicated that porosity plays an important role in the ?_r values of (Mg_0.95Co_0.05)TiO₃ ceramics. Specimens sintered by reaction-sintering method at 1350 °C for 4 h possess excellent dielectric properties with an ?_r of 16.3, a Q × f value of 244,500 GHz, and a τ_f value of −53.5 ppm/°C.