共查询到19条相似文献,搜索用时 625 毫秒
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采用溶胶凝胶法制备x Mn-Ba0.2Sr0.8Zr0.18Ti0.82O3(BSZT)(x=0mol%、1mol%、2mol%、3mol%)的陶瓷粉末,以传统工艺制备Mn离子掺杂的BSZT陶瓷。研究Mn离子掺杂浓度对BSZT陶瓷烧结特性、物相结构、介电性能、击穿场强以及储能密度的影响。结果表明,Mn离子掺杂降低了BSZT陶瓷的烧结温度,同时降低其介电常数以及介电损耗,提高了击穿场强和储能密度。在1400℃下烧结的2mol%Mn离子掺杂BSZT陶瓷较未掺杂BSZT陶瓷的烧结温度降低了100℃,相对密度为96.3%;1 k Hz处介电常数约为497、介电损耗为3.6%;最大击穿场强为12.595 k V/mm;最大储能密度为0.374 J/cm3。 相似文献
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介绍了某铜冶炼厂利用炉渣选铜后产生的尾矿砂对污酸废水进行除氟的试验情况,确定了最佳溶解条件和尾矿砂添加量.该冶炼厂将尾矿砂溶解于含氟污酸中,降低污酸中氟离子的腐蚀活性,并强化废水处理工序的絮凝沉降效果.试验表明:尾矿砂最佳溶解温度为50~60℃,溶解时间为1.0 h,尾矿砂最佳溶解粒径为300~400目,添加量为2.5~3.0 g/L.通过高氟污酸溶解尾矿砂,模拟现有污酸废水全流程处理工艺,中和上清液中ρ(F)在20~25 mg/L,除氟效果较为明显. 相似文献
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《中国陶瓷》2017,(10)
采用固相反应法制备了具有纯立方钙钛矿结构的电荷自补偿型稀土离子掺杂钛酸锶陶瓷,其化学式为Re_(0.02)Sr_(0.98)TiO_3(ReST,Re=Nd,Gd,Er)。SEM分析发现稀土离子掺杂能够有效地抑制晶粒生长。采用HP4292A精密阻抗分析仪、JJC9906-A介电强度测试仪及FMRL偏压测试系统测试了ReST陶瓷的介电性能,研究了不同种类稀土离子掺杂ReST陶瓷的储能特性。结果表明:电荷自补偿型ReST陶瓷的室温相对介电常数显著升高(ε_r2000@1 kHz)并具有较好的偏压稳定特性。与此同时,ReST陶瓷还具有较低的介电损耗(tanδ2%@1 kHz)及较高的电击穿强度(E_b150 kV/cm),适合于中高压固态储能介质材料的应用。 相似文献
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《Journal of the European Ceramic Society》2003,23(11):1925-1933
The effects of lithium fluoride on the sinterability, the microstructure and the low frequency dielectric properties of acceptor/donor-doped CaZrO3 ceramics were investigated. The acceptor(Mn)/donor(W) doping was used to avoid CaZrO3 reduction. Lithium fluoride was selected as a liquid phase sintering aid to lower the sintering temperature. The dielectric properties of CaZrO3 ceramics with LiF additions are strongly dependent on the densification, the microstructure, and the reaction with LiF. CaZrO3 ceramics without LiF addition sintered at high temperature display a high permittivity, low losses and a good behavior under an electrical field as a function of temperature. Using LiF, this dielectric can be sintered at 1000 °C to achieve theoretical densities of 91%, εr values of 31 and losses close to 0.4%. This low sintering temperature allows co-sintering with base metal, nickel and copper, for which scanning electron microscopy and energy dispersive spectroscopy results are presented. 相似文献
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Kai Tong Changrong Zhou Qingning Li Jun Wang Ling Yang Jiwen Xu Guohua Chen Changlai Yuan Guanghui Rao 《Journal of the European Ceramic Society》2018,38(4):1356-1366
Effect of Zn site-selected doping on electrical properties, high-temperature stability and sensitivity of piezoelectric response for BiFeO3-BaTiO3 ceramics was investigated. The results revealed that the addition of Zn leaded to an evident modification of the microstructure. The B-site selected doping was a more effective approach in improving piezoelectric properties as well as their thermal stability than those of A-site selected doping. Moreover, the enhanced piezoelectric properties accompanying by excellent high-temperature stability and sensitivity in B-site selected doping ceramics were obtained. The microstructure, domain switching behavior and temperature-dependent piezoelectric response in Zn site-selected doping ceramics were investigated, and their relationships with improving piezoelectric properties and high-temperature stability were explored. These results showed that the B-site selected doping ceramics had excellent piezoelectric properties (d33 = 192pC/N) along with a high-temperature stability (Td = 450 °C). 相似文献
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透明玻璃陶瓷具有热膨胀系数可调、强度高、化学稳定性好的优点,且兼具透光/发光的特性,是一种在光学信息、生物技术、激光技术、红外遥感及民用照明等领域有着广泛的应用前景的新型功能材料。本文简述了玻璃陶瓷的透光机制,对形核剂、过渡金属离子及稀土离子掺杂MgO-Al2O3-SiO2(MAS)系透明玻璃陶的析晶及透光/发光性能方面的研究进展进行了介绍,并简要分析了开发具备透光/发光性质的高结晶度MAS透明玻璃陶瓷材料存在的问题,最后展望了透明玻璃陶瓷的发展趋势与前景。 相似文献
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本文采用传统的陶瓷工艺合成了Ba0.6Sr0.4TiO3陶瓷,研究了Bi掺杂对材料参数ε、tanδ和E的影响,并探讨了相关的掺杂改性机理。结果表明:适量的Bi能够改善陶瓷的介电性能,同时细化陶瓷的晶粒尺寸。 相似文献
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综述了添加剂对钛酸镁陶瓷性能影响的研究现状,烧结及介电性能等方面的进展。研究结果中可以看出,Bi2O3-V2O5、Co2O3、ZnO等氧化物及氧化物玻璃料的添加可以不同程度地大幅降低陶瓷的烧结温度。在Mg2TiO4中掺杂不同添加剂可适当改变其介电常数,满足其介电常数材料的应用需要;在MgTiO3中掺入不同添加剂可不同程度改变其介电常数,得到具有较高Q*f值且τf≈0的钛酸镁基陶瓷材料。从当前研究现状可以看出,掺杂改性是获得所需性能材料的强有力手段,也是今后对钛酸镁基陶瓷性能优化的主要研究方向之一。 相似文献
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Worawut Makcharoen Jerapong Tontrakoon Gobwute Rujijanagul David P. Cann Tawee Tunkasiri 《Ceramics International》2012
In this study, CaCu3Ti4O12 (CCTO) ceramics were doped with cesium and cerium atoms to possibly improve the electrical properties of these widely used ceramics. In all cases, pure phase perovskites were produced where cesium doping enhanced the grain growth and cerium doping produced grain growth inhibition. The cesium doping showed an improvement in loss tangent performance, in contrast to the cerium doping which showed a negative result. A high dielectric constant >15,000 with a dielectric loss lower than 0.06 was observed for cesium 2.0 mol% doped at high frequencies. These results were related to the change in microstructure and the properties of grain boundary after doping. 相似文献
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《Ceramics International》2021,47(22):31423-31432
There is a challenge to increase the application range of chalcogenide materials due to the fixed photoelectric properties and complex preparation process. To solves the problem, bulk ceramics with different doping ratios should be investigated. Here, the influence of the doping ratio of molybdenum MO and Ga oxide on the composition, structure, morphology and luminescence properties of bulk ceramics is studied, the optimal doping ratio in this range is determined by analysis of mass loss and volume shrinkage. The cubic crystal structure is confirmed by X-ray diffraction results. The results showed that molybdenum was successfully doped Mo into the matrix material is revealed by Raman spectroscopy. The X-ray fluorescence is used to study the composition ratio changes of bulk ceramics before and after sintering. The molecular structure model of Mo–ZnSe/ZnS with different concentration is constructed. The X-ray photoelectron spectroscopy shows the spin orbits of Zn 2p and S 2p, as well as the +3 valences in terms of Mo and Ga. The optical performance is enhanced the light-emitting band is enlarged to the near infrared region. All the work suggest that this new compound has an improved micro-structural, optical and electrical properties. This research can provide theoretical and experimental reference for the doping research of chalcogenide materials and new optoelectronic devices. 相似文献
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采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。 相似文献