Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer

We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).     

dBm average optical output power operation of small-chirp 40-gbps electroabsorption Modulator with tensile-strained asymmetric quantum-well absorption Layer

A small-chirp 40-Gbps electroabsorption modulator (EAM) with high optical output power capability has been developed for the first time. An optimized tensile-strained asymmetric quantum-well structure is employed as the absorption layer of the EAM so that small chirp and reduction of the lifetime of the photogenerated holes for high optical output power tolerance is obtained. Deteriorations of frequency response and chirp due to carrier pileup under high optical output power conditions were prevented by enhancing carrier sweepout, which was experimentally confirmed as a hole lifetime as short as 35 ps under high optical output power conditions. As a result, good frequency response (bandwidth > 30 GHz) and small chirp (/spl alpha/<1) were obtained under the condition of the zero bias voltage and +4.5 dBm continuous-wave (CW) optical output power (P/sub out,CW/). Clear eye opening and high dynamic extinction ratio under 40-Gbps non-return-to-zero modulation persisted to a high average output power (P/sub out,ave/) condition of P/sub out,ave/=+1.0 dBm.     

Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach, and long-haul applications

We present a metal-organic-chemical-vapor-deposition-grown low-optical-insertion-loss InGaAsP/InP multiple-quantum-well electroabsorption modulator (EAM), suitable for both nonreturn-to-zero (NRZ) and return-to-zero (RZ) applications. The EAM exhibits a dynamic (RF) extinction ratio of 11.5 dB at 1550 nm for 3 Vp-p drive under 40-Gb/s modulation. The optical insertion loss of the modulator in the on-state is -5.2 dB at 1550 nm. In addition, the EAM also exhibits a 3-dB small-signal response (S21) of greater than 38 GHz, allowing it to be used in both 40-Gb/s NRZ and 10-Gb/s RZ applications. The dispersion penalty at 40 Gb/s is measured to be 1.2 dB over /spl plusmn/40 ps/nm of chromatic dispersion. Finally, we demonstrate 40-Gb/s transmission performance over 85 km and 700 km.     

High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s

High-performance and compact 40-Gb/s driver amplifiers were realized in 1.2-/spl mu/m emitter double-heterojunction InGaAs-InP HBT (D-HBT) technology with a maximum cut-off frequency (f/sub T/) of 150 GHz and a maximum oscillation frequency (f/sub max/) of 200 GHz. Two-stage differential drivers feature a lumped input and fully distributed output stage and deliver a maximum differential output swing of 11.3 V peak-to-peak (V/sub pp/) at 40 Gb/s with less then 350 fs of added rms jitter and rise and fall times of about 7 ps while consuming a total power of 3 W. When biased at a lower output swing of 6.3 V/sub pp/, excellent 40-Gb/s eyes with a 7-ps fall time, 6-ps rise time, and no observable jitter deterioration compared with the input source are obtained at a reduced power consumption of 1.7 W. On-wafer measured differential S-parameters show a differential gain of 25 dB, 50 GHz bandwidth, and input and output reflection below -20 dB from 2 to 45 GHz. The amplifiers' small die size (1.0/spl times/1.7 mm), relatively low power consumption, large output swing, and ability to have dc coupled inputs and outputs enable compact 40-Gb/s optical transmitters with good eye opening for both conventional transmission formats such as nonreturn-to-zero and return-to-zero and alternative formats such as duobinary and differential phase shift keying.     

10-Gb/s upgrade of bidirectional CWDM systems using electronic equalization and FEC

We discuss options for upgrading coarse wavelength-division multiplexed (CWDM) optical access links over standard single-mode fiber (SSMF) by increasing per-channel data rates from 2.5 to 10 Gb/s. We identify electronic equalization and forward error correction (FEC) as the enabling technologies to overcome the dispersion limit of SSMF. In addition, we show how FEC enhances the tolerance to in-band crosstalk, and paves the way toward fully bidirectional CWDM transmission. Due to the lack of CWDM sources rated for 10-Gb/s operation, we demonstrate full-spectrum (1310 to 1610 nm) 10-Gb/s CWDM transmission over standard-dispersion fiber using uncooled, directly modulated lasers specified for 2.5 Gb/s. All 16 CWDM channels could be transmitted over more than 40 km, yielding a capacity-times-distance product of 6.4 Tb/s/km. The longest transmission distance (80 km) was achieved at 1610 nm, equivalent to 1600 ps/nm of chromatic dispersion.     

A 1.7 Gb/s ASK and a 622 Mb/s incoherent FSK transmissionexperiment using a 1.55-μm multiquantum well distributed feedbacklaser

A multiple-quantum-well distributed-feedback (MQW-DFB) laser with narrow linewidth and low frequency chirp at low output power may experience linewidth rebroadening at high output power. the rebroadening is mostly due to a large carrier-induced change of refractive index, which also causes a large frequency modulation response for the MQW-DFB lasers. Using a 1.55-μm MQW-DFB laser, a 622-Mb/s amplitude-shift-keying (ASK) transmission experiment employing 200-km of fiber and an erbium-doped fiber amplifier has been demonstrated having a dispersion power penalty less than 9.8 dB. The receiver sensitivities at BER=10^-9 of the ASK system are -34.5 dBm and -42.5 dBm for 1.7-Gb/s and 622-Mb/s modulation, respectively. A 622-Mb/s incoherent frequency-shift-keying (FSK) transmission experiment using the same laser has also achieved a receiver sensitivity of -42.5 dBm     

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on an identical epitaxial layer (IEL) integration scheme are developed for 40-Gb/s optical fiber communication systems. A self-aligned planarization technique has been adopted to reduce the capacitance of the electroabsorption modulator (EAM). The IEL structure EML chips exhibit a small signal modulation bandwidth around 40 GHz. The influence of residual reflection at the modulator facet on the small signal modulation response is investigated. Submount containing a grounded coplanar waveguide (GCPW) transmission line is used for packaging the EML chips into transmitter modules. The optimization of the GCPW structure to suppress resonances in frequency response due to parallel-plate modes is presented. Clear eye opening under 40-Gb/s nonreturn-to-zero (NRZ) modulation has been demonstrated for the packaged EML module.     

Novel and simple model of 10-Gb/s electroabsorption modulated lasers and its experimental validation of transmission performance due to overshoot of optical signals

We have experimentally and theoretically investigated the transmission performance of 10-Gb/s electroabsorption modulated lasers (EMLs) due to the overshoot of optical pulses. When a highly negative bias voltage is applied to EMLs, the overshoot becomes larger due to nonlinear transfer curves of EMLs. In order to further understand the overshoot effect of optical pulses from EMLs on transmission performance, we propose a novel and simple EML model based on the frequency response (magnitude and phase) and the transfer curves (P-V and /spl alpha/-V) of EMLs. Although the model does not solve the rate equations and the wave equations, it can accurately predict output pulse shapes and the frequency chirp as well as the transmission performance with reducing simulation time. Using the EML model, we can calculate the overshoot and dispersion power penalty due to modulation bandwidth and group delay difference in 10-Gb/s EMLs. Our results suggest that the overshoot should be considered to accurately predict the transmission performance of 10-Gb/s EMLs.     

High-Performance and Low-Cost 40-Gb/s CWDM Optical Modules

High-performance and low-cost 40-Gb/s optical modules using four different wavelength uncooled 10-Gb/s distributed-feedback (DFB) lasers are proposed and demonstrated. The 40-Gb/s optical module was integrated with coarse wavelength division multiplexing (CWDM) thin-film filters which enabled four 10-Gb/s transmission channels output through a single fiber. The 10-Gb/s DFB laser was packaged by commercialized low-cost coaxial TO-Can technology. The results of the 40-Gb/s optical module showed that the output optical power was above ${-}1$ dBm per channel and the system power budget was 12 dB. The transmission distance with a single-mode fiber reached more than 30 km at a bit-error-rate of $10^{{-}9}$. Compared with conventional 40-Gb/s optical modules, the module is easy to fabricate and is low cost. This proposed high-performance 40-Gb/s CWDM optical module demonstrates not only the feasibility of a 30 km transmission, but also shows the low-cost possibility of ensuring the application of WDM-passive optical network fiber-to-the-home systems.      

Reduction in reflection-induced chirp from photonic integrated sources

Previously electroabsorption modulated lasers (EMLs) have been demonstrated using source lasers with grating strengths of two or less (k/sub r/L /spl les/ 2.0). Spatial holeburning was believed to limit the magnitude of the optimal grating strength. However, those standard-grating-strength lasers are sensitive to reflections from modulator output facet, integrated amplifiers, combiners, fiber tip, etc. and are a barrier to making integrated modules for long-span transmission. EMLs having record-strength (K/sub r/L > 6) gratings are fabricated. Output power >9.5 dBm, sidemode suppression ratio beyond 50 dB, single-mode yield >60% at high power, and power penalty <0.3 dB at 10 Gb/s for 75 km of fiber are demonstrated.     

4$,times,$25-Gb/s 40-km PHY at 1310 nm for 100 GbE Using SOA-Based Preamplifier

We present extensive numerical simulations of an optical link deploying four electroabsorption modulated lasers (EMLs) at 25 Gb/s over up to 40 km of standard single-mode fiber. The receiver comprises a semiconductor optical amplifier (SOA) as a preamplifier. We analyze the bit error ratio (BER) along different link lengths under varying conditions such as output power and extinction ratio of the EML transmitters, the noise figure of the SOA preamplifier and the bit and word alignment of the four wavelength channels. We demonstrate that the EML transmitters require a minimum extinction ratio of 8 to 10 dB and a minimum output power of +2 to +4 dBm in order to meet the BER requirements for 100 Gigabit Ethernet (100 GbE) using 4 times 25-Gb/s physical media dependent (PMD) devices. Furthermore, we show that single-channel performance analyses can be used to estimate the behavior for multichannel amplification in the SOA preamplifier.     

Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.     

Plug-in type 1.3-/spl mu/m fiber amplifier module for rack-mounted shelves

We have successfully developed a plug-in type PDFA module for rack mounted shelves which is assembled on a printed-board. In this module, we use a newly developed Pr/sup 3+/-doped high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber and wavelength stabilized 1.017-/spl mu/m laser diodes (LDs). We have obtained a small-signal gain of 24 dB and a noise figure of 6.6 dB at 1.30 /spl mu/m with an LD drive current of 240 mA/spl times/2. We achieved an output power of 10 dBm with a signal input power of 0 dBm. The total power consumption of this module, including that of a Peltier cooler, was 3.5 W when the LD drive current was 240 mA/spl times/2.     

Single-drive LiNbO/sub 3/ Mach-Zehnder modulator with widely DC tunable chirp

We present a 10-Gb/s LiNbO/sub 3/ Mach-Zehnder modulator that allows tuning of the chirp in a wide range (-0.7/spl divide/0.7) by applying just a dc voltage, while the radio-frequency section is single drive. The device shows uniform performances across the chirp tuning range. By tuning chirp value, transmission tests showed power penalty less than 2 dB for spans up to 2100 ps/nm.     

Fully electrical 40-Gb/s TDM system prototype based on InP HEMTdigital IC technologies

This paper presents a fully electrical 40-Gb/s time-division-multiplexing (TDM) system prototype transmitter and receiver. The input and output interface of the prototype are four-channel 10-Gb/s signals. The prototype can be mounted on a 300-mm-height rack and offers stable 40-Gb/s operation with a single power supply voltage. InP high-electron mobility transistor (HEMT) digital IC's perform 40-Gb/s multiplexing/demultiplexing and regeneration. In the receiver prototype, unitraveling-carrier photodiode (UTC-PD) generates 1 V_pp output and directly drives the InP HEMT decision circuit (DEC) without any need for an electronic amplifier. A clock recovery circuit recovers a 40-GHz clock with jitter of 220 fs_pp from a 40-Gb/s nonreturn-to-zero (NRZ) optical input. The tolerable dispersion range of the prototype within a 1-dB penalty from the receiver sensitivity at zero-dispersion is as wide as 95 ps/nm, and the clock phase margin is wider than 70° over almost all the tolerable dispersion range. A 100-km-long transmission experiment was performed using the prototype. A high receiver sensitivity [-25.1 dBm for NRZ (2⁷-1) pseudorandom binary sequence (PRBS)] was obtained after the transmission. The 40-Gb/s regeneration of the InP DEC suppressed the deviation in sensitivity among output channels to only 0.3 dB. In addition, four-channel 40-Gb/s wavelength-division-multiplexing (WDM) transmission was successfully performed     

All-optical wavelength conversions based on MgO-doped LiNbO/sub 3/ QPM waveguides using an EDFA as a pump source

We propose and demonstrate cascaded /spl chi//sup (2)/ wavelength conversion in an MgO-doped LiNbO/sub 3/ quasi-phase-matched waveguide at reduced pump cost by using only an erbium-doped fiber amplifier (EDFA) as the exclusive pump source in a fiber-ring resonator. A fiber Bragg grating in conjunction with an optical circulator isolates the pump light and confines it to the resonator. A conversion efficiency of -30 dB was obtained with a 3-dB gain-saturation output power of only +12 dBm from the EDFA. It is anticipated that -14-dB conversion efficiency is possible, if an EDFA with a 3-dB gain-saturation output power of +20 dBm is used.     

Peripheral-coupled-waveguide MQW electroabsorption modulator for near transparency and high spurious free dynamic range RF fiber-optic link

Peripheral coupled waveguide (PCW) design has been deployed in InGaAsP multiple quantum-well (MQW) electroabsorption modulator (EAM) at 1.55-/spl mu/m wavelength. PCW enhances the optical saturation power and reduces the optical insertion loss and the equivalent V/sub /spl pi// simultaneously. A radio-frequency link using a 1.3-mm-long lumped-element PCW EAM has achieved experimentally a link gain of -3 dB, at 500 MHz and at input optical power of 80 mW. The corresponding two-tone multioctave spurious-free dynamic range (SFDR) at the same bias is measured at 118 dB/spl middot/Hz/sup 2/3/. The single-octave SFDR at the third-order null bias is 132 dB/spl middot/Hz/sup 4/5/.     

Theoretical investigation of 8 /spl times/ 10-Gb/s WDM signal transmission performance based on gain-equalized SOAs using backward Raman pumping at DCF

We have theoretically investigated 8 /spl times/ 10-Gb/s wavelength-division multiplexing (WDM) signal transmission characteristics based on semiconductor optical amplifiers (SOAs) with equalized gain using discrete Raman amplification (DRA). Gain equalization and low noise figures have been obtained by adjusting the backward Raman pumping power and wavelength at a dispersion compensating fiber (DCF) for each span. Bit-error-rate characteristics were calculated for 8 /spl times/ 10-Gb/s WDM signal transmission over 6 /spl times/ 40-km single-mode fiber (SMF) + DCF links with gain-equalized SOAs using DRAs at DCF. Approximately a 2.5-dB improvement of the receiver sensitivity was achieved by using SOAs and DRAs with optimized Raman pumping. One can easily upgrade the transmission length of a link based on SOAs with an appropriate backward pump laser at each DCF.     

Evaluation of 4-Gbit/s optical fiber transmission distance with direct and external modulation

Transmission characteristics for a recently modulated measured distributed-feedbacked (DFB) laser and an externally modulated DFB laser using a Ti:LiNbO/sub 3/, Mach-Zehnder modulator at 4 Gb/s are discussed. The transmission characteristics are estimated by an advanced eye-pattern analysis method. The maximum measured fiber dispersion with a directly modulated laser is 100 to 140 ps/nm when the chirp power penalty is 1 dB. However, for external modulation, there is no power penalty after transmission over a 2220-ps/nm dispersive fiber. This confirms that external modulation has superior transmission characteristics. The modulation scheme for 4-Gb/s systems in terms of these results is discussed.<>     

Simulation and design for a tunable dispersion compensator package

A novel optical model for a tunable dispersion compensator is realized by a deliberate packaging scheme ensuing from intensive interactions of mechanical design, materials science and numerical simulation techniques including computational fluid dynamics and finite element analysis. The compensator is comprised of multiple cascaded single cavity Gires-Tournois etalons, each under independent temperature control. Three critical issues are addressed: etalon temperature uniformity, thermal insulation and optical surface deformation of the etalons. With etalon optical surface deformation minimized and etalon temperature uniformity successfully controlled within a range of /spl plusmn/0.1/spl deg/C, this small (232 /spl times/ 139 /spl times/ 16 mm) compensator achieves extremely low group delay ripple (<2.0 ps), low insertion loss ripple (<0.5 dB, insertion loss <6.3 dB), low polarization dependent loss [(PDL),<0.15 dB] and low polarization mode dispersion [(PMD),<0.7 ps]. The dispersion tuning range is from -700 ps/nm to +700 ps/nm in a dispersion passband of 0.2 nm which is sufficient for 10-Gb/s transmission. Thermal insulation design makes the tuning process take effect within 1 min at maximum power consumption 5 W.