晶体硅太阳电池表面钝化技术

介绍了晶体硅太阳电池表面钝化技术的发展历程,表面钝化膜在晶体硅太阳电池中所起的作用,以及晶体硅太阳电池中各种钝化膜和表面钝化技术。阐述了国内和国际对晶体硅太阳电池表面钝化技术的最新研究动态,重点论述了SiO2,SiNx,SiCx和Al2O3,以及这些钝化膜的叠层钝化技术的优缺点。在此基础上进一步指出SiO2/SiNx叠层钝化膜将成为今后工业化生产的研究重点,Al2O3及其叠层钝化膜将成为今后实验室的研究重点,由于表面钝化是提高晶体硅太阳电池转换效率最有效的手段之一,今后晶体硅太阳电池表面钝化技术仍将是国内和国际研究的热点问题之一。     

晶体硅太阳电池烧结工艺优化

金属电极与硅的接触电阻是影响太阳电池填充因子和短路电流进而影响光电转换效率的重要因素之一。首先对晶体硅太阳电池的烧结工艺进行了优化,利用平台式烧结温度曲线代替陡坡式烧结温度曲线。然后,采用Core Scan方法测试工艺优化前后晶体硅太阳电池丝网印刷烧结银电极与硅之间的接触电阻Rc,并测试了工艺优化前后电池片的IV特性。数据显示烧结工艺优化后可减小银电极与硅的接触电阻,从而提高了太阳电池的光电转化效率。平台式烧结温度曲线更适用浅结高方阻的电池结构。     

n型晶体硅太阳电池光诱导衰减现象研究

基于n型晶体硅太阳电池,分析了经光辐照后电池各性能参数的变化,探究了n型晶体硅太阳电池光诱导衰减机理.使用工业化设备在大面积(156 mm×156 mm)n型单晶硅片上制备太阳电池.利用太阳光谱模拟仪对制备的太阳电池进行光照处理,对比各阶段太阳电池电性能参数.结果表明,光照时会导致太阳电池表面减反射膜SiN:H/Si界面处积聚大量固定电荷,增大界面态密度,破坏电池表面钝化层结构,导致开路电压和短路电流产生较大衰减,35 kWh/m2光辐照后n型硅太阳电池效率衰减3.6％.在380℃低温退火处理后电池效率基本可恢复到初始状态.内量子效率测试结果表明光辐照后电池短波区域响应减弱,前表面界面效应导致电池效率发生较大衰减.     

晶体硅太阳电池扩散气氛场均匀性研究

为降低晶体硅太阳电池的制造成本,从扩散气氛场角度提出实验方法,优化扩散工艺均匀性。该研究方法可改善太阳电池电性能并对产业化生产起指导作用。     

晶体硅太阳电池扩散气氛场均匀性研究

为降低晶体硅太阳电池的制造成本,从扩散气氛场角度提出实验方法,优化扩散工艺均匀性.该研究方法可改善太阳电池电性能并对产业化生产起指导作用.     

PC1D方法对铝背场钝化技术的分析

降低单晶硅原材料成本,采用更薄的硅片作为太阳电池的原料是晶体硅太阳电池产业发展的趋势之一。对薄片化的太阳电池,铝背场的背表面钝化工艺显得愈加重要。采用PC1D太阳电池软件模拟的方法,对以商业用p型硅为衬底的单晶硅125×125太阳电池的铝背场的背表面钝化技术进行了模拟,分析得出,对一定厚度的电池片来说,尤其是当少数载流...     

晶体硅表面纳米孔减反光结构的制备及其性能表征

利用金属辅助硅化学刻蚀法在晶体硅表面制备 了 大面积有序硅纳米结构,并基于金属辅助硅化学刻蚀的机理,实现了硅纳米结构从线阵列到 孔阵列转变。漫反射光谱的测试结果表 明,相对于平面、金字塔结构,硅纳米孔织构的晶体硅具有卓越的减反光性能,在300100nm 光谱范围内的AM1.5G太阳光子的光反射损失比低于3.6%。硅纳米孔阵列减反光性能优异, 制备方法简单、快速,且其孔壁互连,有益于晶体硅太阳电池的后续制备工艺及其表面结构 机械稳定,可作为减反光结构应用于晶体硅太阳电池。     

太阳电池制造过程中的测试工艺

太阳能电池是把太阳能转化为电能的装置,一般的太阳能电池是用半导体材料制成的。按照晶体硅太阳电池制造的工艺流程,对太阳电池制造过程中各工序之间的测试项目进行了介绍。同时,介绍了各测试项目的测试设备、测试原理以及测试过程。     

铝浆在晶体硅太阳电池上的应用讨论

主要介绍了铝浆作为晶体硅太阳电池的背电场,在烧结使用的过程中常常出现的问题,探讨了背场形成过程中铝珠、铝包的成因及解决方案,分析了背场附着力的影响因素,并对影响电池片弯曲度的因素作了说明.     

高方阻密栅电池发射结方阻的优化

主要介绍了晶体硅太阳电池光电转换效率的工艺优化,特别是对高发射结方阻方面,以及后道工序中如何使之适应高方阻工艺。在高方阻方面主要采用了深结高方阻,这主要是从工艺稳定性方面考虑。通过一系列工艺的优化及大量实验,获得了高达635 mV的开路电压,5.817 A的短路电流,均值18.67%的电池效率。     

太阳能电池的电势诱导衰减及检测

晶体硅组件的电势诱导衰减是现在的晶体硅电池组件在高电压系统下广泛面临的失效模式。常规组件的测试方法需要至少96小时的测试时间。在本文中,我们试图通过实验找到一种快速的太阳能电池的抗电势诱导衰减性能的方法。采用NaCl溶液作为Na+源, PVB 作为封装材料,我们能够在1小时内完成实验。在使用了新的抗电势诱导衰减工艺的太阳能电池上也成功进行了测试。经过试验证明实验前后电池片的反向电流的变化是很重要的判断标准。通常具有抗电势诱导衰退性能的电池反向漏电试验后变化是小于2倍的。电池的结果和相对应的组件的测试结果进行了比较,结果显示两者吻合的很好。     

A novel high open-circuit voltage p-n InP solar cell design

The performance of InP solar cells has been limited by low open-circuit voltages. While the reported short-circuit current densities are approaching the theoretical limit, the open-circuit voltages have yet to obtain what is expected from a semiconductor with a direct band gap of 1.35 eV. This work investigates the factors that determine the open-circuit voltage and presents the design and fabrication of a novel high open-circuit voltage p-n InP solar cell. the key aspect of the novel design is a complete analysis of the top contact metallization effects on the reverse saturation current density and the open-circuit voltage. the features of the design are not specific to InP solar cells but are applicable to other advanced material solar cells that require a thin emitter for an optimal design (those materials with a high absorption coefficient). By minimizing the reverse saturation current density, a high open-circuit voltage and high efficiency may be obtained. In addition, a complete analysis of the solar cell modelling is provided, with comparisons to other published InP solar cell models and device results to juxtapose the key material and design parameter effects.     

一种高精度解析提取太阳电池参数的新方法

基于太阳电池光生电流远大于反向饱和电流、并 联电阻远大于串联电阻以及光生电流 近似等于负的短路电流3个边界条件,结合太阳电池在短路点、开路点和最大功率点处的极值 表述, 提出了一种解析求解太阳电池光生电流、反向饱和电流、理想因子、并联电阻和串联电阻5个电性参 数的方法,并研究了方法的特点。通过与文献实验数据的对比表明,本文方法不仅具有正确 性,而且 适用于各种条件下的各种类型电池;通过实验表明,本文方法具有较高的计算精 度和速度,误差在2%以下,时间小于0.2s。     

几何设计对球硅太阳电池性能影响的有限元仿真

基于COMSOL软件的光学模块和半导体模块,从球缺比例、直径、正电极接触面积三个几何设计方面对球硅电池进行了仿真分析;通过对比反向饱和电流密度和理想因子,发现球硅半径越小、球缺比例越小、正电极相对接触面积越大,电池的电学特性越好;分析了不同直径球硅电池的几何特征与其光电参数之间的关联性,发现其与传统平面硅太阳电池存在显著差异。研究结果可为制作高效率低成本柔性球硅太阳电池提供理论指导。     

Noise as a tool for non-destructive testing of single-crystal silicon solar cells

Transport and noise characteristics of forward and reverse biased single-crystal silicon solar cells were measured in order to evaluate the solar cell technology. Stress comprising an temperature of 400 K and a DC electric field were applied to a total of 20 solar cells for a period of 5000 h. The samples were quality and reliability screened using noise reliability indicators. From the measurement results it follows that the noise spectral density related to defects is of 1/f type and its magnitude was found to be proportional to the square of the DC forward current at low injection levels. It has been established that samples showing low noise feature high-conversion efficiency. It has also been found out that there is a strong correlation between the sample initial-condition noise and the efficiency after 5000 h of combined stressing.     

High‐irradiance degradation tests on concentrator GaAs solar cells

The present work summarises the results of an experiment of light‐soaking high‐concentrator MOVPE‐grown GaAs solar cells under monochromatic light (808 nm). The irradiance level was set so that the short‐circuit current obtained was 1100 times that produced with the AM1ċ5D spectrum at 1 kW/m². This test caused no morphological changes in the devices. The main phenomenon discovered has been a slight increase with time of the reverse current I₀₂. This increase is analogous to that observed in similar degradation experiments based on high forward currents. In general, the results of these tests show that the drop in performance is very limited, supporting the idea that concentrator GaAs solar cells are rugged devices, capable of achieving long lifetimes in field operation. Copyright © 2003 John Wiley & Sons, Ltd.     

GaAs太阳电池的体电阻及旁路漏电对电池结特性的影响

复合电流是液相外延GaAs太阳电池暗电流的主要成分。扫描电镜观察表明,旁路电流主要来源于太阳电池结区的杂质。串联电阻主要来源于电池p型GaAs层的薄层电阻及正面电极的体电阻。串联电阻降低了电池的短路电流,旁路电阻降低了电池的开路电压。减小电池p-GaAs层的薄层电阻是提高电池效率的重要途径。     

Collaborative R&D between multicrystalline silicon ingots and battery efficiency improvement——effect of shadow area in multicrystalline silicon ingots on cell efficiency

We characterized strip-like shadows in cast multicrystalline silicon (mc-Si) ingots.Blocks and wafers were analyzed using scanning infrared microscopy,photoluminescence spectroscopy,laser scanning confocal microscopy,field-emission scanning electron microscopy,X-ray energy-dispersive spectrometry,and microwave photoconductivity decay technique.The effect on solar cell performance is discussed.The results show that the non-microcrystalline shadow region in Si ingots consists of precipitates of Fe,O,and C.The size of these Fe-O-C precipitates found at the shadow region is ～25μm.Fe-O-C impurities can slightly reduce the minority carrier lifetime of the wafers while severely decrease in shunt resistance,leading to the increase in reverse current of the solar cells and degradation in cell efficiency.     

Superhydrophobic Carbon Nanotube Electrode Produces a Near‐Symmetrical Alternating Current from Photosynthetic Protein‐Based Photoelectrochemical Cells

The construction of protein‐based photoelectrochemical cells that produce a variety of alternating currents in response to discontinuous illumination is reported. The photovoltaic component is a protein complex from the purple photosynthetic bacterium Rhodobacter sphaeroides which catalyses photochemical charge separation with a high quantum yield. Photoelectrochemical cells formed from this protein, a mobile redox mediator and a counter electrode formed from cobalt disilicide, titanium nitride, platinum, or multi‐walled carbon nanotubes (MWCNT) generate a direct current during continuous illumination and an alternating current with different characteristics during discontinuous illumination. In particular, the use of superhydrophobic MWCNT as the back electrode results in a near symmetrical forward and reverse current upon light on and light off, respectively. The symmetry of the AC output of these cells is correlated with the wettability of the counter electrode. Potential applications of a hybrid biological/synthetic solar cell capable of generating an approximately symmetrical alternating current are discussed.     

Electrical and photoelectrical properties of P3HT/n-Si hybrid organic–inorganic heterojunction solar cells

A detail analysis of electrical and photoelectrical properties of hybrid organic–inorganic heterojunction solar cells poly(3-hexylthiophene) (P3HT)/n-Si, fabricated by spin-coating of the polymeric thin film onto oxide passivated Si(1 0 0) surface, was carried out within the temperature ranging from 283 to 333 K. The dominating current transport mechanisms were established to be the multistep tunnel-recombination and space charge limited current at forward bias and leakage current through the shunt resistance at reverse bias. A simple approach was developed and successfully applied for the correct analysis of the high frequency C–V characteristics of hybrid heterojunction solar cells. The P3HT/n-Si solar cell under investigation possessed the following photoelectric parameters: J_sc = 16.25 mA/cm², V_oc = 0.456 V, FF = 0.45, η = 3.32% at 100 mW/cm² AM 1.5 illumination. The light dependence of the current transport mechanisms through the P3HT/n-Si hybrid solar cells is presented quantitatively and discussed in detail.