Design, modeling, and characterization of monolithically integratedInP-based (1.55 μm) high-speed (24 Gb/s) p-i-n/HBT front-endphotoreceivers

High-speed, long-wavelength InAlAs/InGaAs OEIC photoreceivers based on a p-i-n/HBT shared layer integration scheme have been designed, fabricated and characterized. The p-i-n photodiodes, formed with the 6000 Å-thick InGaAs precollector layer of the HBT as the absorbing layer, exhibited a responsivity of ~0.4 A/W and a -3 dB optical bandwidth larger than 20 GHz at λ=1.55 μm. The fabricated three-stage transimpedance amplifier with a feedback resistor of 550 Ω demonstrated a transimpedance gain of 46 dBΩ and a -3 dB bandwidth of 20 GHz. The monolithically integrated photoreceiver with a 83 μm p-i-n photodiode consumed a small dc power of 35 mW and demonstrated a measured -3 dB optical bandwidth of 19.5 GHz, which is the highest reported to date for an InAlAs/InGaAs integrated front-end photoreceiver. The OEIC photoreceiver also has a measured input optical dynamic range of 20 dB. The performance of individual devices and integrated circuits was also investigated through detailed CAD-based analysis and characterization. Transient simulations, based on a HSPICE circuit model and previous measurements of eye diagrams for a NRZ 2³¹-1 pseudorandom binary sequence (PRBS), show that the OEIC photoreceiver is capable of operation up to 24 Gb/s     

37-GHz bandwidth monolithically integrated InP HBT/evanescently coupled photodiode

In this letter, we demonstrate a monolithically integrated optoelectronic integrated circuit (OEIC) for 1.55-/spl mu/m wavelength application. The presented OEIC consists of an evanescently coupled photodiode (ECPD) and a single-stage common-base InP-InGaAs heterojunction bipolar transistor (HBT) amplifier. The guide structure was grown first by metal-organic chemical vapor deposition and pin/HBT was then regrown by molecular beam epitaxy. The ECPD exhibits a responsivity of 0.3 A/W and a -3-dB electrical bandwidth of 30 GHz. The photoreceiver demonstrates a -3-dB electrical bandwidth of 37 GHz with a transimpedance gain of 32 dB/spl middot//spl Omega/. This is, to our knowledge, the first ECPD/HBT ever reported for a monolithically integrated OEIC.     

7.1 GHz bandwidth monolithically integratedIn0.53Ga0.47As/In0.52Al0.48As PIN-HBT transimpedance photoreceiver

A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors demonstrated f_T and f_max of 54 GHz and 51 GHz, respectively. The amplifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dBΩ. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz     

Monolithically integrated multichannel SiGe/Si p-i-n-HBTphotoreceiver arrays

A low-power, short-wavelength eight-channel monolithically integrated photoreceiver array, based on SiGe/Si heterojunction bipolar transistors, is demonstrated. The photoreceiver consists of a photodiode, three-stage transimpedance amplifier, and passive elements for feedback, biasing and impedance matching. The photodiode and transistors are grown by molecular beam epitaxy in a single step. The p-i-n photodiode exhibits a responsivity of 0.3A/W and a bandwidth of 0.8 GHz at λ=0.88 μm. The three-stage transimpedance amplifier demonstrates a transimpedance gain of 43 dBΩ and a -3 dB bandwidth of 5.5 GHz. A single channel monolithically integrated photoreceiver consumes a power of 6 mW and demonstrates an optical bandwidth of 0.8 GHz. Eight-channel photoreceiver arrays are designed for massively parallel applications where low power dissipation and low crosstalk are required. The array is on a 250-μm pitch and can be easily scaled to much higher density. Large signal operation up to 1 Gb/s is achieved with crosstalk less than -26 dB. A scheme for time-to-space division multiplexing is proposed and demonstrated with the photoreceiver array     

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/lnGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/lnGaAs heterojunction bipolar transistor (HBT) process. The InP/lnGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 AAV at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-l pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.     

A 3 GHz transimpedance OEIC receiver for 1.3-1.55 μm fiber-opticsystems

A high-performance metal-semiconductor-metal high-electron-mobility transistor (MSM-HEMT) transimpedance photoreceiver fabricated using OMCVD-grown InAlAs/InGaAs heterostructures on an InP substrate is discussed. This is the first demonstration of a monolithically integrated receiver amplifier that incorporates a cascode amplifier stage and a Schottky diode level-shifting stage implemented on InP-based optoelectronic integrated circuit (OEIC) photoreceivers. The transimpedance amplifier has an open-loop gain of 5.7 and a bandwidth of 3.0 GHz, which represent the highest gain and the highest speed performance reported for 1.3-1.55-μm-wavelength OEIC receivers     

Investigation of adjacent channel crosstalk in multichannelmonolithically integrated 1.55 μm photoreceiver arrays

We have investigated adjacent channel crosstalk in 3-, 8-, and 16-channel InP-based monolithically integrated p-i-n/HBT photoreceiver arrays, with a channel bandwidth of 11 GHz. By using a novel monolithically integrated radiation shield, we have been able to reduce the crosstalk to -35 dB at 10 GHz. These parameters represent the best performance in multichannel integrated photoreceiver arrays. The two main components of crosstalk are found to be radiation crosstalk and electrical crosstalk and these are separately dependent on interchannel spacing and single- or dual-source biasing schemes. An electromagnetic full-wave solution shows that the measured crosstalk in arrays without the radiation shield could be dominated by radiation crosstalk, which can be modeled as a capacitive coupling between adjacent channels. Similarly, electrical crosstalk can be modeled by equivalent parasitic resistive and inductive elements. Values of these circuit elements have been determined by analyzing experimental data     

A novel monolithic HBT-p-i-n-HEMT integrated circuit with HBTactive feedback and p-i-n diode variable gain control

We report the world's first functional MMIC circuit integrating HBT's, HEMT's, and vertical p-i-n diodes on a single III-V substrate. The 1-10 GHz variable gain amplifier monolithically integrates HEMT, HBT, and vertical p-i-n diode devices has been fabricated using selective MBE and a merged processing technology. The VGA offers low-noise figure, wideband gain performance, and good gain flatness over a wide gain control range. A noise figure below 4 dB was achieved using a HEMT transistor for the amplifier stage and a wide bandwidth of 10 GHz. A nominal gain of 10 dB was achieved by incorporating HBT active feedback techniques and 12 dB of gain control range was obtained using a vertical p-i-n diode as a varistor, all integrated into a compact 1.5×0.76 mm² MMIC. The capability of monolithically integrating HBT's, HEMT's, and p-i-n's in a merged process will stimulate the development of new monolithic circuit techniques for achieving optimal performance as well as provide a foundation for high performance mixed-mode multifunctional MMIC chips     

InP-InGaAs single HBT technology for photoreceiver OEIC's at 40Gb/s and beyond

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 Ω/380 Ω and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value     

一种采用有源电感的可调增益小面积超宽带低噪声放大器

设计了一款采用可调谐有源电感（TAI）的可调增益的小面积超宽带低噪声放大器(LNA),输入级采用共基极结构,输出级采用射随器结构,分别实现了宽带输入和输出匹配;放大级采用带有反馈电阻的共射共基结构以取得宽的带宽,并采用TAI作负载,通过调节TAI的多个外部偏压使LNA的增益可调。结果表明,该LNA在2~9GHz的频带内,通过组合调节有源电感调节端口的偏压可实现S21在16.5~21.1dB的连续可调;S11小于-14.7dB;S22小于-19.3dB;NF小于4.9dB;芯片面积仅为0.049mm2。     

InP基长波长单片集成光接收前端的设计和制备

叙述了利用InP基长波长pin光探测器和异质结双极晶体管(HBT)单片集成实现光接收前端的设计和制备方法.pin光探测器和HBT采用共享层结构,这样的结构不仅性能优于堆叠层结构,而且制备工艺兼容.制备的HBT截止频率达到30GHz,pin光探测器的3dB带宽达到了15GHz,集成光接收前端的3dB带宽达到3GHz,跨阻放大倍数达到800.     

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology

An optoelectronic integrated circuit operating in the 1.55-/spl mu/m wavelength range was realized on GaAs substrate through metamorphic technology. High indium content layers, metamorphically grown on a GaAs substrate, were used to fabricate the optoelectronic integrated circuits (OEICs) with -3 dB bandwidth of 40 GHz and 210 V/W of calculated responsivity. The analog OEIC photoreceiver consists of a 12-/spl mu/m, top-illuminated p-i-n photodiode, and a traveling wave amplifier (TWA). This receiver shows 6 GHz wider bandwidth than a hybrid photoreceiver, which was built using comparable, but stand-alone metamorphic p-i-n diode and TWA. With the addition of a buffer amplifier, the OEIC shows 7 dB more gain than the hybrid counterpart. To our knowledge, this is the first 40 Gbit/s OEIC achieved on a GaAs substrate operating at 1.55 /spl mu/m.     

8-element linear array monolithic p-i-n MODFET photoreceivers usingmolecular beam epitaxial regrowth

An 8-element linear array of single-stage integrating front-end photoreceivers using molecular beam epitaxial (MBE) regrowth was investigated. Each element consisted of a p-i-n In_0.53Ga_0.47As photodiode integrated with a selectively regrown pseudomorphic In_0.65Ga_0.35As/In_0.52Al_0.48 As MODFET. Cutoff frequencies of 1.0-μm discrete regrown MODFETs were f_t=24 GHz and f_max=50 GHz. Transconductance of the regrown MODFETs was as high as 495 mS/mm with a current density (I_ds) of 250 mA/mm. The 3-dB bandwidth of the photoreceiver was measured to be 1 GHz. The bit rate sensitivity at 1 Gb/s was -31.8 dBm for BER 10^-9 using 1.55 μm excitation for a photoreceiver with an anti-reflection coating. The single-stage amplifier exhibited up to 25 dB flatband gain of the photocurrent, and a two-stage amplifier was up to 31 dB of gain. Good uniformity between each photoreceiver element in the array was achieved. Electrical crosstalk between photoreceiver elements was estimated to be ~-34 dB     

Monolithically integrated, photoreceiver with large, gain-bandwidth product

A direct-detection 800 nm GaAs monolithically integrated photoreceiver is reported with a photocurrent gain of 200 and a 1 GHz bandwidth capable of driving a 50 ? load with IV peak pulses. The integrated NPN photodiode has over 7GHz bandwidth and requires no modifications to the ion-implanted GaAs MESFET process. The 200GHz gain-bandwidth product and 3200 V/W responsivity are among the highest reported for similar receivers.     

Design, fabrication, and performance of high-speed monolithicallyintegrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers

A detailed study of the performance of monolithically integrated photoreceivers based on metal-semiconductor-metal (MSM) photodetectors (PD's) and HEMT's is undertaken. Two different stacked-layer approaches to integrating MSM-PD's with HEMT's are investigated, and the performance of detectors and HEMT's for each approach is compared. The structure with the MSM layers grown on top of the HEMT layers exhibited the best overall performance. A physics-based MSM model is developed and incorporated into microwave circuit design software; excellent agreement between circuit simulations and measured frequency responses is demonstrated. To evaluate the effects of MSM electrode geometry and detector area on photoreceiver performance, photoreceivers with MSM interelectrode spacings of 1, 1.5, and 2 μm were fabricated and characterized. The electrical amplifier used in the photoreceivers is a two-stage, variable-transimpedance amplifier with a common-gate HEMT as the feedback path. By adjusting the DC voltage applied to the gate of this feedback HEMT, transimpedances ranging from 55.8 to 38.1 dBΩ, with corresponding -3 dB cutoff frequencies from 6.3 to 18.5 GHz, were measured experimentally. Excellent noise performance has been measured, with average input noise current spectral densities of 7.5, 8, and 12 pA/Hz^1/2 obtained for bandwidths of 6.3, 8, and 13.7 GHz, respectively. A packaged receiver has been tested at 5 Gb/s and an open eye pattern obtained     

Modulator driver and photoreceiver for 20 Gb/s optic-fiber links

Two integrated circuits, a modulator driver and a photoreceiver integrating a metal-semiconductor-metal (MSM) photodetector, a differential transimpedance amplifier and two limiting amplifier stages for high-speed optical-fiber links are presented. The IC's were manufactured in a 0.2 μm gate-length AlGaAs-GaAs high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The modulator driver IC operates up to 25 Gb/s with an output voltage swing of 3.3 V_p-p at each output. The 1.3-1.55 μm wavelength monolithically integrated photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 17 GHz with a high transimpedance gain of 12 kΩ. Eye diagrams are demonstrated at 20 Gb/s with an output voltage of 1 V_p.p     

CMOS单片光接收机的带宽设计

设计了一个由调节型级联跨阻抗放大器(TIA)和双光电二极管(DPD)构成的光电集成接收机.给出了DPD小信号电路模型和单片集成光接收机的带宽设计方法,给出限制DPD和光接收机带宽的重要因素,分析和模拟了这个光电集成接收机的带宽,用低成本的0.6μm CMOS工艺设计出1.71GHz带宽和49dB跨阻增益的接收机,并给出测试结果.     

An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver

A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Ω, a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth     

High gain wideband amplifier IC using 0.7 μm GaAs MESFETtechnology

A high gain wideband differential amplifier with a new circuit configuration is proposed and monolithically integrated by using 0.7 μm-gate GaAs MESFET IC technology. The fabricated IC exhibited gain of 16.7 dB and bandwidth of 3.2 GHz. A gain twice that of a conventional differential GaAs-MESFET amplifier was achieved with small bandwidth degradation     

A low supply voltage SiGe LNA for ultra-wideband frontends

A low-power low-noise amplifier (LNA) for ultra-wideband (UWB) radio systems is presented. The microwave monolithic integrated circuit (MMIC) has been fabricated using a commercial 0.25-/spl mu/m silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The amplifier uses peaking and feedback techniques to optimize its gain, bandwidth and impedance matching. It operates from 3.4 to 6.9GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10dB and a noise figure less than 5dB over the entire bandwidth. The circuit consumes only 3.5mW using a 1-V supply voltage. A figure of merit (FoM) for LNAs considering bandwidth, gain, noise, power consumption, and technology is proposed. The realized LNA circuit is compared with other recently published low-power LNA designs and shows the highest reported FoM.