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1.
采用氧化物陶瓷工艺在1000~1160℃制备掺CuO的LiZn铁氧体Li0.35Zn0.3Fe2.35O4.结果表明,在1000~1100℃烧结时适量的CuO可促进固相反应和晶粒生长,降低烧结温度,提高样品的密度、饱和磁化强度4πMs和剩磁Br,降低矫顽力Hc.在1130℃烧结时,CuO基本无助烧作用,且增加CuO含量出现异常晶粒长大现象.在1160℃烧结时,样品内部形成巨晶,虽有利于降低Hc,但导致Br明显下降.  相似文献   

2.
以氧化物Y2O3、Fe2O3、Bi2O3、V2O5、CaCO3为原料,采用固相反应法制备了Y1.05Bi0.75Ca1.2Fe4.4V0.6O12(Bi-CVG)铁氧体材料。通过XRD、SEM和MATS等方法考察了不同烧结温度、保温时间对产物体积密度、晶体结构、形貌和磁性能的影响。结果表明,选择适当的保温时间可以有效提高铁氧体的密度;烧结温度对相稳定性和磁性能影响显著。当烧结条件为1100℃与6h时,所制备的Bi-CVG样品属于体心立方晶系,且粒度大小分布比较均匀,结构致密。该样品磁性能良好,平均晶粒尺寸约为2μm,密度为5.20g/cm3;主要磁特性为剩磁Br=24.57mT,矫顽力Hc=764.4A/m,饱和磁化强度4πMs=343.2×10-4T。  相似文献   

3.
采用氧化物陶瓷工艺制备了掺Bi2O3的Li0.4Zn0.2Fe24O4铁氧体.用XRD、SEM、密度测试和磁性能表征,研究了Bi2O3对LiZn铁氧体性能的影响.结果表明:Bi2O3能有效抑制烧结过程中的锂挥发,促进固相反应,降低烧结温度,但过多的Bi2O3会阻止晶粒生长;适量掺杂Bi2O3可以提高LiZn铁氧体的饱和磁感应强度和矩形比,降低铁氧体的矫顽力.  相似文献   

4.
按组成Li0.35Zn0.30Fe2.29MnxO4-δ+0.005mol%Bi2O3和Li0.35Zn0.30Fe2.29O4-δ+0.005mol%Bi2O3+x/3mol%Mn3O4(x=0.02~0.08)在920和950℃制备缺铁LiZn铁氧体,分别在原料和预烧料中添加Mn3O4.结果表明:920℃烧结时,在原料中添加适量Mn3O4可提高样品饱和磁化强度Ms和剩磁Br,降低矫顽力Hc,而在预烧料中添加Mn3O4对Ms和Br影响不大,不完全固相反应导致两种样品Hc很高,但在原料中添加Mn3O4的样品Hc相对较低.950℃烧结时,两组样品Hc均大幅下降,但在原料中添加Mn3O4的样品Hc反而相对较高.两种方式添加Mn3O4均可提高电阻率ρ,x=0.06时ρ出现峰值,且在原料中添加Mn3O4的样品ρ较高.  相似文献   

5.
将Mg(OH)2/Fe(OH)3混合体超声活化4h,固相合成制备了尖晶石型MgFe2O4粉末。通过TG-DTA、XRD和TEM测试,分析固相反应的机理、材料的化学成分和微观结构。用振动样品磁强计(VSM)、矢量网络分析仪研究材料的电磁性能。结果表明,700℃下制备的MgFe2O4颗粒为纳米级单晶结构,纯度高,结晶性好,粒径分布为20~45nm;Mg-Fe2O4的比饱和磁化强度Ms=21.015A.m2/kg,剩磁Mr=2.5798A.m2/kg,矫顽力Hc=9.017×10-3T,MgFe2O4对7~18GHz范围内的电磁波表现为介电损耗。  相似文献   

6.
将溶胶-凝胶法和新型双喷丝头静电纺丝技术相结合,制备了CoFe2O4-SiO2电纺纳米纤维材料。利用热分析法(TG-DTA)、X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)和振动样品磁强计(VSM)等测试手段,表征了所研制纳米纤维的晶型结构、纤维形貌以及磁学性能。研究结果表明,样品中CoFe2O4为单畴结构,纤维直径在100nm左右,非晶态SiO2的存在有效抑制了CoFe2O4晶粒的生长;煅烧温度对纤维形貌和晶型结构有较大影响,随着煅烧温度的升高,饱和磁化强度(Ms)和剩余磁化强度(Mr)均增大,但矫顽力(Hc)和剩磁比(Mr/Ms)呈波动变化。  相似文献   

7.
采用水热分散法,通过分步化学反应,简便有效地制备了沸石基纳米磁性材料,并用XRD、IR和振动样品磁强计(VSM)对所得样品进行了相关测试。测试结果表明,体相CoFe2O4的磁学参数:矫顽力Hc、饱和磁化强度Ms和剩余磁化强度Mr均有较大幅度的降低。即由体相强磁性材料变为纳米非晶软磁材料,这是纳米粒子的小尺寸效应和量子尺寸效应所致,并且XRD、IR和磁滞回线表征结果也佐证此结论。  相似文献   

8.
采用水热分散法,通过分步化学反应,简便有效地制备了沸石基纳米磁性材料,并用XRD、IR和振动样品磁强计(VSM)对所得样品进行了相关测试。测试结果表明,体相MeFe2O4的磁学参数:矫顽力Hc、饱和磁化强度Ms和剩余磁化强度Mr均有较大幅度的降低。即由体相强磁性材料变为纳米非晶软磁材料,这是纳米粒子的小尺寸效应和量子尺寸效应所致,并且XRD、IR和磁滞回线表征结果也佐证此结论。  相似文献   

9.
以金属硝酸盐和柠檬酸为原料,用溶胶凝胶自燃烧法制备NiZn系铁氧体前驱体粉末(Ni0.4Zn0.6Fe2O4,Ni0.2Zn0.6Cu0.2Fe2O4,Ni0.33Zn0.59Cu0.11Fe1.97O4(Bi2O3)0.002和Ni0.33Zn0.59Cu0.11 Fe1.97O4(Bi2O3)0.002(MnO2)0.02),然后经30小时高能球磨,从X-ray衍射谱中发现前驱体粉末虽然基本上是尖晶石结构,但是还有一些杂相,经过球磨,杂相明显减少,结构更加完整,颗粒减小.前驱体粉末Ni0.33Zn0.59Cu0.11Fe1.97O4(Bi2O3)0.002经30小时球磨后,在空气中退火,退火温度分别为400℃,600℃,800℃,900℃,1000℃.用X-ray衍射谱分析其物相,发现在800℃退火得到单相的尖晶石结构,无杂相.该样品的最佳退火温度低于1000℃.用振动样品磁强计分别测量制备态和退火态样品粉末的磁性,可以看出,随退火温度的升高,比饱和磁化强度σs逐渐增大,矫顽力Hc逐渐减小,当900℃退火后,比饱和磁化强度已接近块状NiZn系铁氧体.1000℃退火后,上述四种样品中Ni0.4Zn0.6Fe2O4具有最高的比饱和磁化强度σs=65.09emu/g.本文为NiZn铁氧体的低温烧结提供了有用的实验数据.  相似文献   

10.
张宁  吴华强  冒丽  李明明  李亭亭  夏玲玲 《功能材料》2012,43(18):2554-2557,2563
以多壁碳纳米管(MWCNTs)为模板,三乙二醇(TREG)为溶剂,采用微波多元醇法制备MWC-NTs负载组成可控的Ni1-xZnxFe2O4(x=0.4、0.5、0.6)纳米复合材料Ni1-xZnxFe2O4/MWCNTs。其结构和形貌通过XRD、SEM、TEM和EDX进行表征,用VSM测试样品的磁性,并探讨了微波功率、微波时间对镍锌铁氧体负载的影响。结果表明立方系尖晶石结构的单分散Ni1-xZnxFe2O4磁性纳米粒子均匀负载在碳纳米管表面,平均粒径约为6nm;其磁性能与镍锌铁氧体的组成有关,随着Zn含量的增加,饱和磁化强度(Ms)先增大后减小,当x=0.5时Ms达到最大值。矫顽力(Hc)都比较小,在室温下表现为超顺磁性。  相似文献   

11.
锂离子电池用正极材料LixCo0.8N0.2O2   总被引:7,自引:0,他引:7  
在控制结晶工艺合成LixCo0.8Ni0.2O2的基础上制备了锂离子电池正极材料LixCo0.8Ni0.2O2。能量散射谱分析结果表明活性材料中Co、Ni元素分布均匀。由于在控制结晶合成的前驱体Co0.8Ni0.2(OH)2中,Co、Ni均匀分布在M(OH)2中的M层,因此可以避免形成一般固溶体发生扩散性重组所需长时间的煅烧过程。扫描电子显微镜分析了表微观形貌的变化。X米衍射分析表明LixCo0.8Ni0.2O2为单一相的α-NaFeO2层状结构,不存在其它杂相;晶胞参数a和c随x变化经历了由小到大再变小的;c/a则经历了一个由大到小再变大的过程。  相似文献   

12.
溶胶凝胶法合成Li4.4Al0.4S0.6O4-xLi2O及电导性能*   总被引:1,自引:1,他引:0  
用溶胶-凝胶法制备了Li.4.4A;0.4Si0.6O4-xLi2O(x=0.00~0.50)离子导体材料,并用DTA-TG、XRD、及交流阻抗等技术对样品进行了测试,结果发现用溶胶-凝胶法可降低Li4.4Al0.4Si0.6O4的合成温度;随Li2O的掺入可增强基质材料的致密性并提高了其离子的导电性能.  相似文献   

13.
采用脉冲激光沉积法(Pulsed laser deposition,PLD)在Pt/Ti/SiO2/Si衬底上制备TiN/Al掺杂Hf0.5 Zr0.5 O2/TiN的MIM(金属-绝缘体-金属)结构薄膜电容器.对Al掺杂浓度为0% ~4%(摩尔分数)的Al:Hf0.5 Zr0.5 O2薄膜的微观结构以及电学性能进行了研究,在此基础上,还研究了退火温度对Al:Hf0.5 Zr0.5 O2薄膜的影响.测试结果表明,随着Al掺杂浓度的增大和退火温度的降低,四方相更加稳定,电滞回线更加细窄,剩余极化强度减小.退火温度为500℃时,掺杂浓度为1.03%(摩尔分数)的Al:Hf0.5 Zr0.5 O2薄膜中将诱导出类似反铁电薄膜具有的双电滞回线特性,储能密度更高.分析结果表明,这些变化均是由于Al:Hf0.5 Zr0.5 O2薄膜内四方相与正交相之间发生的场致可逆相变以及氧空位的再分布.  相似文献   

14.
Gd0.8Sr0.2 CoO3-Sm0.2Ce0.80 O1.9复合阴极制备及性能研究   总被引:1,自引:0,他引:1  
为探索适于中温条件下使用的固体氧化物燃料电池的阴极材料,用固相反应法制备了Gd0.8Sr0.2CoO3(GSC)阴极粉体,用X射线衍射考察了GSC的成相温度.采用丝网印刷法将GSC-(Sm2O3)0.1(CeO2)0.8(SDC)沉积在SDC电解质圆片上,制成对称阴极,在不同温度下烧结.用交流阻抗谱从500~750℃测量了GSC-SDC复合阴极和SDC电解质之间的界面电阻.结果表明,GSC-SDC复合阴极的界面电阻比GSC阴极降低了3~5倍;750℃时,GSC-SDC阴极的界面电阻仅为0.15Ω·cm2.  相似文献   

15.
The sinterbility of Y2O3-stabilized zirconia with Cr2O3 additive was studied by a hot pressing technique using graphite and alumina dies; the dependence of the density on temperature, pressure and time was measured. Using graphite dies, it was found that the addition of Cr2O3 to Y2O3-stabilized zirconia was effective as an at for densification due to formation of chromium at higher temperatures. Addition of Cr2O3 inhibited the grain growth of Y2O3-stability zirconia. The solubility of Cr2O3 in ZrO2 was found to be 0.7 mol% at 1450° C. The results could be explained in relation to the phase relations of the system ZrO2-Y2O3-Cr2O3.  相似文献   

16.
Structural and magnetic properties of Sn0?95Co0?05O2 nanocrystalline and diluted magnetic semiconductors have been investigated. This sample has been synthesized by co-precipitation route. Study of magnetization hysteresis loop measurements infer that the sample of Sn0?95Co0?05O2 nanoparticle shows a well-defined hysteresis loop at 300 K temperature, which reflects its ferromagnetic behaviour. We confirmed the roomtemperature intrinsic ferromagnetic (FM) semiconductors by ab initio calculation, using the theory of the functional of density (DFT) by employing the method of Korringa–Kohn–Rostoker (KKR) as well as coherent potential approximation (CPA, explain the disorder effect) to systems. The ferromagnetic state energy was calculated and compared with the local-moment-disordered (LMD) state energy for local density approximation (LDA) and LDA–SIC approximation. Mechanism of hybridization and interaction between magnetic ions in Sn0?95Co0?05O2 is also investigated. To explain the origin of ferromagnetic behaviour, we give information about total and atoms projected density of state functions.  相似文献   

17.
This paper describes the action of solutions containing nitric acid, hydrofluoric acid and water on GaAs of (1 0 0) orientation. Single-crystal slices of the semiconductor were immersed in the etch and the rate of dissolution was measured. Results were taken over a wide range of composition of the solution. The results show a marked resemblance to the etch-rate data for silicon in the same etching solution, although the actual etching rates for GaAs were lower. The semiconductor surfaces were observed carefully after etching, using techniques of optical microscopy and scanning electron microscopy. Etch hillocks were observed for many compositions of the etch. It was found that the hillocks were covered by a layer of oxide: if any of this oxide covering came off, the hillock quickly disappeared. Sequential etching experiments showed that the hillocks were not associated with dislocations. Both the etch-rate data and the microscopic examination of the GaAs surfaces suggest that the system is probably diffusion-limited over the range of etch composition studied in this work.  相似文献   

18.
采用粉末冶金和熔渗法制备W80/Cu-Al_2O_3复合材料,测试其密度、硬度和导电率,探究Al_2O_3对W80/Cu复合材料耐电弧侵蚀性能的影响。结果表明,添加Al_2O_3对复合材料的致密度和导电率影响不大,硬度有所增加;W80/Cu和W80/Cu-Al_2O_3复合材料在不同电流条件下燃弧时间和燃弧能量基本相同,但W80/Cu-Al_2O_3复合材料的稳定性更高;在30 V、30 A条件下,W80/Cu复合材料在电弧侵蚀过程中发生材料从阴极向阳极转移,加入Al_2O_3增强相后,材料的转移方向为阳极向阴极转移,且材料损耗量降低,喷溅现象减少,电弧侵蚀后触头表面更加平整。  相似文献   

19.
The spinel ferrite nano-particles of chemical composition Ni0·2Ca0·8Fe2O4 have been prepared by sol-gel method. Subsequently, the nanoparticles are encapsulated with the intrinsically conducting polymer shell of polypyrrole. The X-ray diffraction patterns confirm the single phase cubic spinel structure of the materials. To understand the dielectric properties of the materials, frequency-dependent dielectric measurement has been performed at 300 K in the range of 100 mHz to 2 MHz. On polymerization, both the dielectric strength as well the dielectric loss is significantly increased. Also, the dielectric conductivity, which arises from the electron hopping mechanism, is considerably increased on polymerization.  相似文献   

20.
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