Mg95Ni5-30wt%La0.7Mg0.3Ni2.8Co0.5复合物的吸放氢性能研究

先采用氢化燃烧合成法制备Mg95Ni5,然后将氢化燃烧合成产物与30%(质量分数)La0.7Mg0.3Ni2.8Co0.5合金进行机械球磨复合,球磨时间分别为5、10、15和20h;将Mg95Ni5的氢化燃烧合成产物直接球磨10h用于对比研究.采用X射线衍射仪、扫描电镜、能谱仪及气体反应控制器研究了材料的相组成、微观形貌、颗粒化学成分以及吸放氢性能.研究表明,球磨10h的Mg95Ni5/La0.7Mg0.3Ni2.8Co0.5复合物具有最佳的吸放氢性能,在373K,50s内基本达到饱和吸氢量3.78%(质量分数);在523K,1800s内放氢量为3.83%(质量分数);其起始放氢温度为425K,与Mg95Ni5相比降低了35K,吸放氢性能的改善与复合物的组织结构密切相关.此外,La0.7Mg0.36Ni2.8Co0.5的加入改善了复合物的放氢动力学性能.     

La替代Mg对快淬纳米晶/非晶Mg_2Ni型合金贮氢动力学的影响

为了改善Mg2Ni型合金气态及电化学贮氢动力学性能,用La部分替代合金中的Ni,用快淬技术制备了Mg2-xLaxNi（x=0、0.2、0.4、0.6）合金,用XRD、SEM、HRTEM分析了铸态及快淬态合金的微观结构;用自动控制的Sieverts装置测试了合金的气态贮氢动力学性能,用程控电池测试仪测试了合金的电化学贮氢动力学。结果发现快淬二元Mg2Ni合金具有典型的纳米晶结构,而快淬La替代合金明显地显示具有非晶结构,表明La替代Mg提高Mg2Ni型合金的非晶形成能力。La替代Mg明显地改变Mg2Ni型合金的相组成。当x≤0.2时,La替代Mg不改变合金的主相Mg2Ni,但出现少量的LaMg3及La2Mg17相。而当La替代量x=0.4时,合金的主相改变为（La,Mg）Ni3＋LaMg3。合金的气态及电化学吸放氢动力学对La含量及快淬工艺敏感,La替代使合金的吸氢动力学降低,但适量的La替代Mg可以明显改善合金的放氢动力学及高倍率放电能力。La替代对合金贮氢动力学性能的影响与合金的制备工艺密切相关,表明合金的组织结构是影响其贮氢动力学的重要因素。     

La替代Mg对快淬Mg_2Ni型贮氢合金结构及吸放氢动力学的影响

为了改善Mg2Ni型贮氢合金的吸放氢动力学性能,用La部分替代合金中的Mg。用快淬工艺制备了Mg2Ni型Mg2-xLaxNi(x=0、0.2、0.4、0.6)贮氢合金,获得长度连续,厚度约为30μm,宽度为25mm的薄带。用XRD、SEM、HRTEM分析了快淬态合金薄带的微观结构,用DSC研究了快淬薄带的热稳定性,应用Sieverts装置研究了快淬态合金的吸放氢动力学,探索了La替代Mg对快淬Mg2Ni型合金吸放氢动力学性能的影响。结果发现,在快淬无La合金中没有出现非晶相,但快淬含La合金显示了以非晶相为主的结构。表明La替代Mg显著提高Mg2Ni型合金的非晶形成能力。快淬合金的热稳定性随La含量的增加而上升。快淬态合金的吸氢量随La含量的增加而减小,但其放氢量在La含量x=0.2时有极大值,这主要归因于La替代Mg导致的结构变化。     

烧结温度对La0.67Mg0.33Ni3合金气态储放氢性能的影响

采用磁场辅助烧结法(MASS)制备La0.67Mg0.33Ni3合金,研究了烧结温度对合金相结构、微观形貌及吸放氢性能的影响。结果显示,973～1123K温度下烧结的合金主相均是PuNi3型结构的(La、Mg)Ni3。活化及动力学测试表明,1023K烧结的合金经过2个循环就能完全活化并在30s内达到最大容量的90%,最大吸氢量达到1.58%(质量分数);PCT结果显示,该合金滞后系数为0.519,吸氢量为1.525%(质量分数),放氢量为1.474%(质量分数),放氢率为0.967,各项性能均为最优。     

碳助磨制备纳米镁铝储氢合金的结构及储氢性能研究

以改性无烟煤为助磨剂,在氢气气氛下球磨制备了具有纳米结构的镁铝合金储氢材料,通过SEM,XRD,TPD等手段对比研究了球磨吸氢材料及静态再吸氢材料的晶相结构及放氢动力学性能.结果表明:改性无烟煤具有良好的助磨作用,经5.5h球磨,材料平均粒度可达74nm;镁铝合金经反应球磨后,其中的Mg转化成了β-MgH2和γ-MgH2,放氢峰温低于300℃;静态再吸氢后,MgH2全部以β-MgH2存在,且晶体粒度增长60％,Mg17Al12分解为单质Mg和Al,其中单质Al使储氢材料放氢活化能降低,用Kissinger方程计算出球磨储氢和再吸氢材料的放氢一级表观活化能分别为107.3kJ/mol和67.1kJ/mol.     

Mn替代Ni对(La0.8Nd0.2)2Mg(Ni0.9-xCo0.1Mnx)9合金储氢及电化学性能的影响

在Ar保护下采用磁悬浮感应熔炼制备(La0.8Nd0.22)Mg(Ni0.9-xCo0.1Mnx)9(x=0,0.05,0.1,0.15)合金,系统研究了元素替代及退火处理对合金相结构、吸放氢性能及电化学性能的影响。结果表明,合金相主要由(La,Nd)Ni5相、LaMg2Ni9相和(La,Nd2)Ni7相组成,当x=0.15时,(La,Nd)2Ni7相消失。随着Mn取代量的增加,合金的储氢量、放电容量先增加后减小,Mn的添加提高了合金的充放电循环稳定性。经1073K退火处理后合金的放电容量得到提高,循环稳定性能得到明显改善。     

TiO2对镁碳复合纳米材料吸放氢性能的影响研究

将TiO2引入镁碳复合材料中反应球磨,在快速纳米化的过程中,TiO2纳米颗粒较容易镶嵌到金属Mg和碳的基体中,对复合材料的吸放氢性能具有良好的催化作用。DSC分析表明,(70Mg30C)2TiO2材料的初始放氢温度比MgH2降低了95℃,高峰放氢温度也降低了80℃。当TiO2的添加量为2%(质量分数,下同)时,(70Mg30C)2TiO2反应球磨储氢密度达到最大值4.78%,300℃放氢量达到3.75%。     

球磨CeMg12+100%Ni合金热力学及电化学贮氢性能

用球磨工艺制备CeMg12+100%Ni电极合金,研究了球磨工艺对合金结构及电化学性能的影响。结果表明球磨CeMg12+100%Ni合金具有非晶纳米晶结构,由Mg2Ni相以及Ni相组成,其含量随球磨时间的延长而增加,这在一定程度上改善了合金的电化学放电性能。球磨非晶纳米晶具有较好的结构稳定性,在吸氢后形成的氢化物相仍保持非晶纳米晶尺度,这有利于降低氢化物的热稳定性,改善电化学放电性能。     

La0.67Mg0.33Ni3合金的活化性能与吸放氢动力学研究

以磁场辅助烧结法(MASS)制备的La0.67Mg0.33Ni3合金为对象,采用XRD、SEM及定容法研究了合金的相结构、微观形貌、活化能力及吸放氢动力学性能。结果显示,MASS制备的合金主相为PuNi3型结构的(La,Mg)Ni3。合金颗粒表面粗糙,呈现多孔结构。1T磁场下合成的合金经过3个循环就可完全活化,最大吸氢量达到1.47%(质量分数)。动力学测试表明,该合金在室温、1MPa氢气下50s内吸氢达到饱和;在333K、0.001MPa氢气下400s内可完成放氢,具有最佳的动力学性能,但合金可逆放氢量较低。     

Co替代Ni对快淬纳米晶/非晶Mg_2Ni型合金吸放氢动力学的影响

为了改善Mg2Ni型合金的吸放氢动力学性能,用Co部分替代合金中的Ni。用快淬工艺制备了纳米晶和非晶Mg20Ni10-xCox(x=0,1,2,3,4)贮氢合金,分析了铸态及快淬态合金的微观结构,测试了合金的吸放氢动力学性能。研究了Co替代Ni及快淬工艺对合金吸放氢动力学性能的影响。结果表明,在快淬合金(x=0)中没有发现非晶相,但快淬合金(x=4)显示了纳米晶/非晶结构,表明Co替代Ni提高了Mg2Ni型合金的非晶形成能力。Co替代Ni不改变合金的Mg2Ni主相,但形成了第二相MgCo2。随Co替代量的增加,合金的吸氢量先增加而后减少,但其放氢量随Co替代量的增加而单调增加。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.