光纤端面脉冲激光诱导损伤测试实验研究

为了研究光纤端面在脉冲激光作用下的损伤阈值,采用掺钕钇铝石榴石(Nd:YAG)激光器诱导损伤测试方法,获得了光纤端面脉冲激光诱导损伤特性的初步结果。结果表明,光纤端面的处理工艺、表面质量、清洁程度及激光损伤探测光源的重复频率对损伤测试结果均有不同程度的影响。     

脉冲激光对石英基底Ta2O5/SiO2滤光膜的损伤效应研究

随着高能激光系统的发展,对光学薄膜抵抗激光损伤能力的要求越来越高,而激光脉宽是脉冲激光对薄膜损伤行为的重要影响因素。针对Ta₂O₅/SiO₂多层膜,基于1-on-1测试方法,分析其在飞秒、皮秒、纳秒激光作用下的损伤特性。测得800 nm飞秒激光作用下的损伤阈值为1.67 J/cm₂;532 nm和1 064 nm皮秒激光作用下的损伤阈值分别为1.08 J/cm²和1.98 J/cm²;532 nm和1 064 nm纳秒激光作用下的损伤阈值分别为9.39 J/cm₂和21.57 J/cm₂,并使用金相显微镜观察了滤光膜的损伤形貌。实验结果表明：飞秒激光对滤光膜的损伤机理主要是多光子电离效应,而皮秒和纳秒激光对滤光膜的损伤机制主要是热效应。滤光膜在飞秒激光作用下的损伤阈值与皮秒激光作用下的损伤阈值相当,纳秒激光作用下的损伤阈值要高一个数量级,透射通带外损伤阈值约为通带内损伤阈值的2倍。     

激光诱导薄膜损伤的缺陷统计模型与光斑效应

讨论了脉冲激光诱导薄膜损伤的缺陷统计模型，在对该模型加些适当的限制条件后，运用它解释光斑效应，发现该理论模型与实验结果符合得很好。     

高反Al2O3/SiO2膜内超快激光预损伤动力学过程

利用紫外飞秒激光光谱技术研究了Al2O3/SiO2高反射膜内的超快载流子动力学。通过实验,发现该反射膜Al2O3层的载流子动力学在紫外反射膜的激光诱导损伤中起着至关重要的作用。通过泵浦-探测实验,发现紫外飞秒激光与光学薄膜作用后,光学薄膜反射率有所下降,且探测光反射率变化的峰值在约2.3 ps的时间内从417 nm左右转移到402 nm左右。为了更好的解释激光诱导载流子动力学,一个具体的理论模型被提出来,该模型指出导带自由电子弛豫过程中与晶格相互作用,产生距导带一个光子能量的中间缺陷态,其初始电子密度影响了材料损伤阈值高低。通过该理论模型得出的激光损伤阈值数据和实验数据吻合得很好。     

色分离光栅激光诱导损伤特性实验研究

对色分离光栅(CSG)在10 64nmNd YAG激光辐照下的损伤特性进行了实验研究。研究表明,湿法刻蚀CSG的损伤阈值比干法刻蚀的高,刻蚀面的损伤阈值比非刻蚀面的损伤阈值大,激光入射表面选择影响光栅面和非光栅面的损伤阈值,从非光栅面入射,这两个面的损伤阈值都比从光栅面入射的高。     

193nm薄膜激光诱导损伤研究

概述了193nm薄膜激光诱导损伤的研究进展.通过对紫外到深紫外波段几种典型薄膜损伤形貌的介绍,对比分析了193nm薄膜激光诱导损伤的可能原因.指出在该波段的氧化物薄膜损伤中,吸收是导致薄膜大块损伤的重要因素,而氟化物的薄膜损伤则是由沉积过程的膜层局部缺陷造成.根据薄膜样品的损伤分析表明,薄膜的某些制备参量与激光损伤阈值...     

1064nm激光多脉冲下HfO2/SiO2高反膜损伤规律

利用小口径元件损伤测试平台对HfO2/SiO2高反膜的1 064 nm激光多脉冲损伤规律进行了研究。研究结果表明:多脉冲作用下HfO2/SiO2高反膜损伤在形态上主要分为色斑和层裂两类,在一定条件的多发次脉冲作用下,色斑损伤存在向层裂损伤转换的趋势;层裂损伤尺寸随脉冲发次呈指数递增后趋于极大值的变化规律,且终态尺寸与辐照激光能量密度呈近似线性关系;色斑S-on-1损伤阈值与脉冲发次关系不明显,而层裂S-on-1损伤阈值随脉冲发次增加呈指数衰减后趋于极小值的变化规律。采用衰减公式拟合手段,对元件抗损伤能力退化规律进行了初步的定量分析。     

重频脉冲CO2激光损伤K9玻璃的实验

对脉冲CO2激光在不同重频模式下损伤K9玻璃进行了实验研究。采用输出能量为10 J,脉宽为90 ns,重复频率在100 Hz至300 Hz之间连续可调的脉冲CO2激光器,对K9玻璃样品进行了激光损伤实验,观察到两次不同重频条件下样品的损伤形貌。实验结果表明,重频越高,对样品的损伤程度就越严重;应力损伤成为K9玻璃激光损伤的最主要的原因,在重频强激光的辐照下,K9玻璃表面出现强烈的等离子体闪光,伴随明显的熔融气化破坏,并形成等离子体爆轰波。爆轰波对玻璃材料产生了严重的力学冲击作用,这种应力作用足以对K9玻璃造成毁灭性破坏。运用有限元分析对激光辐照K9玻璃的温度与应力分布进行仿真,其计算结果与实验基本吻合。     

KrF激光和脉冲CO2激光损伤K9玻璃的实验对比与分析

对KrF准分子激光辐照K9玻璃进行了损伤实验,并与脉冲CO2激光损伤K9玻璃进行了对比分析,研究了紫外和远红外两种激光系统对同种光学材料的损伤特性。实验结果结果表明,KrF准分子激光和脉冲CO2激光对K9玻璃的损伤形貌基本相同,损伤主要是热力耦合损伤机制,但是两者在损伤阈值和损伤时间等方面仍有很大差别。与脉冲CO2激光相比,K9玻璃的KrF准分子激光损伤阈值更低,并且损伤持续时间更短。通过两类激光在波长和光子能量上的巨大差异可以很好地解释这一现象。该研究结果对准分子激光在空间工程应用上有着非常重要的参考价值。     

1064nm激光预处理对HfO2/SiO2反射膜损伤形态转化影响研究

实验研究了不同激光预处理参数对于纳秒激光多脉冲作用下HfO2/SiO2反射膜损伤形态转化的影响。通过对比两类损伤扩张性和对薄膜功能性破坏机制,提出激光预处理技术的重要意义在于抑制损伤形态转化过程。通过薄膜损伤形态分析揭示了激光预处理作用机制为节瘤缺陷的去除和亚表面吸收前驱体的形成两方面的综合作用。实验结果表明:预处理后薄膜损伤形态转化特征曲线向更高通量和更多发次方向平移。针对现有工艺下的薄膜,采用高通量、两台阶的预处理参数组合能够获得兼顾效率的最佳收益,其零几率损伤形态转化阈值最高可以提升140%。     

Design and fabrication of a novel high damage threshold HfO2/TiO2/SiO2 multilayer laser mirror

This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser-induced damage threshold. The mirror is constructed by three materials of HfO2/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO2/SiO2 stacks act as the high reflector (HR) and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO2/TiO2/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm2 (1064 nm, 12 ns). The possible laser damage mechanism of the mirror is discussed.     

TiO_2/SiO_2、ZrO_2/SiO_2多层介质膜光学损耗及激光损伤研究

以TiO_2/SiO_2及ZrO_2/SiO_2多层介质膜为例,测试了不同工艺条件及不同膜系结构下薄膜样品的光学损耗及激光损伤阈值,同时对实验结果作了初步的分析讨论.     

Pre-breakdown in thin SiO2 films

The on-off fluctuations of the tunnel current in 5.6 nm SiO₂ films before dielectric breakdown are analyzed in detail. For this purpose, a low noise measurement system has been realized which allows detection of pre-breakdown phenomena and interruption of the stress before catastrophic failure occurs. A spectral analysis of these fluctuations is presented along with preliminary results of the experiments made possible, for the first time, by the new measurement system     

Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation

Bi₂Te₃ and Sb₂Te₃ films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 × 10⁻⁵ Torr) on single crystal substrates of Al₂O₃ (0001), BaF₂ (111), and fresh cleavages of KCl or NaCl (001) heated to 453–523 K. The films were 10–1500 nm thick. The structures of the bulk material of targets and films were studied by X-ray diffractometry and transmission high-energy electron diffraction, respectively. Electrical properties of the films were measured in the temperature range of 77–300 K. It is shown that the films possess semiconductor properties. Several activation portions are observed in the temperature dependences of resistivity; the energies of activation portions depend on the film thickness and crystallite size.     

TiO2/SiO2多层膜系一维光子晶体缺陷态特性研究

建立了一种基于TiO2/SiO2多层膜系并含缺陷层的一维光子晶体模型。基于时域有限差分(FDTD)算法,对其基本层周期数,缺陷层位置、光学厚度以及不同材料等情况下的带隙特性在理论上进行了系统的模拟与分析,发现这种一维光子晶体的缺陷态的透过率和带隙宽度受基本层周期数、缺陷层所在位置和材料的影响较大,而缺陷态中心波长位置仅由缺陷层的光学厚度决定。     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

具有SiO2/SiNX/SiO2 复合绝缘层的有机薄膜晶体管

We have investigated a SiO_2/SiN_x/SiO_2 composite insulation layer structured gate dielectric for an organic thin film transistor(OTFT) with the purpose of improving the performance of the SiO_2 gate insulator. The SiO_2/SiN_x/SiO_2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO_2 insulation layer device,the SiO_2/SiN_x/SiO_2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decrease...     

Structural properties of fluorinated SiO2 thin films

Fluorinated SiO₂ (SiOF) films, prepared by plasma enhanced chemical vapour deposition from SiH₄, N₂O and CF₄ precursors, have been analysed by infrared (IR) spectroscopy and X-ray photoelectron spectroscopy (XPS) to extract chemical and structural information. Notwithstanding XPS reveals that fluorine concentrations are quite low (less than 4 at.%), the analysis of the Si–O–Si vibration modes in the IR spectra indicates that CF₄ addition involves a deeper modification of the film structure, than the simple formation of Si–F bonds. In particular, by increasing the F concentration in the oxides, the stretching frequency of the Si–O–Si bonds increases, while the bending frequency decreases. On the basis of the central force model, both observations are consistent with the occurrence of a Si–O–Si bond angle relaxation phenomenon, the importance of which increases with the fluorine concentration in the films.