突发模式PSK信号的联合载波位时钟恢复算法

快速载波和位时钟恢复是突发模式传送系统的一个关键因素。本文提出了适用于突发模式PSK信号捕获阶段的一种快速联合载波位时钟恢复算法。算法基于一个特定图案的前导字,采用前向结构直接、同时估计各个同步参数。可估计的载波频差范围是大的,约为符号率的,并且算法所需的计算负载非常低,适合数字硬件实现。仿真结果验证了算法的可行性和有效性。     

突发模式OQPSK接收机的一种快速同步算法

快速取得载波同步和位时钟同步是突发模式通信系统的基本要求。该文提出了突发模式OQPSK接收机的一种快速同步算法。该算法使用一个特定图案的前导字,在前导字期间经过适当处理,将待估计的载波相位和垃时钟相位分开,然后采用开环方法进行并行、独立地估计。理论分析和模拟结果表明,该算法可快速建立载波同步和位时钟同步,并可应用于卫星通信、移动通信等场合。     

全数字无前导字突发模式PSK接收机

突发模式传送系统中，前导字作为系统开销降低了数据传送效率。本文提出一种适合VLSI数字硬件实现的全数字无前导字突发模式PSK接收机方案，接收机的时钟和载波恢复均采用前向同步技术，并论述了一种的载波频差恢复算法。仿真结果验证了算法的可行性和有效性。     

基于循环平稳理论的位定时误差提取算法

首先介绍了适用于线性调制信号的循环平稳理论,线性调制信号的循环自相关函数的指数项中包含有位定时误差信息。在此基础上提出了一种适用于二倍码元速率采样信号的前向位定时误差提取算法,该算法载波频差敏感,在载波频差不为零时,对该算法进行了改进,改进算法不需要进行频差补偿即可获得定时误差估计值。最后,对原算法和改进算法进行了仿真比较。     

基于CAZAC序列的突发通信定时同步算法

介绍了一种基于恒包络零自相关序列(CAZAC)为前导字的突发通信定时同步算法。该算法采用最大似然估计准则,利用CAZAC序列的零自相关特性,直接得到定时同步参数的估计值,且该算法所需的计算量较低,适合数字硬件实现。最后,仿真结果验证了该算法的可行性和有效性,并给出了其主要的硬件实现结构。     

一种基于改进FFT的MPSK载波估计方法

针对多进制相移链控(MPSK)信号相干解调中载波同步问题,提出一种基于Zoom FFT及频域内插的方法进行载波提取。该方法通过信号的非线性变换,在时频域内实现载波频率的粗估计,在此基础上通过频域内的插值校正实现载波的准确提取。仿真试验结果表明,本算法提取的载波具有较高的准确性,估计的最大相对误差只有10-6量级。该方法不需要特定图案的前导字,结构简单,可估计的载波频率适应范围大,在高信噪比的情况下硬件实现系统实时性好。     

一种低信噪比TDMA信号的载波同步算法

本文深入研究了基于FFT运算进行相位扩展的宽范围自相关函数法和宽范围L&R算法,分析了这两种载波频偏估计算法的性能.在此基础上,本文结合TDMA信号的前导字和CZT(chirp z-transform)算法的高频率分辨率特性,设计了适于低信噪比信号的宽范围载波同步改进算法.该算法利用TDMA信号的前导字进行数据辅助(DA)型载波同步,有效地缩小了低信噪比信号的频偏范围;再利用CZT算法进一步缩小频偏范围,最后利用非数据辅助型(NDA)自相关函数法得到精确的载波频偏.改进算法的计算复杂度略高于宽范围自相关函数法,而远低于宽范围L&R算法.通过仿真比较,改进算法对低信噪比(SNR)环境(3-6dB)中的信号具有良好且稳定的估计性能.     

高速移动环境下OFDM系统载波同步

在分析OFDM系统载波频偏信号模型的基础上,提出了基于单OFDM前导符号载波同步的高效算法。将基于前导符号相关的方法和基于循环前缀相关的方法融合,应用信道估计和均衡补偿信道中的残留频偏,从链路级研究易于实现的载波同步算法,在高速无线多径Rayleigh信道下,相对频偏ε<±0·5的条件下车速120km/h时获得十分理想的载波同步结果。     

基于前导字的WLAN OFDM系统载波频偏估计

载波同步是正交频分复用(OFDM)系统的一项关键技术.利用帧前导字中的重复性训练序列进行频偏估计是一种简便有效的处理方法.本文根据Morelli和Mengali[3]算法,提出适用于无线局域网系统IEEE802.11a OFDM[1]的载波频偏估计算法和性能界.在此基础上,提出将短和长训练序列的估计结果综合考虑的两种估计算法,进一步改善估计性能.     

基于前导序列的突发通信载波同步算法

在突发通信中,载波同步技术是解调系统的核心和关键技术。给出了一种基于恒包络零自相关序列(CAZAC)作为前导的突发通信载波同步算法,该算法基于CAZAC序列零自相关特性,先用载波频差前向校正、载波相位前向校正进行载波初始同步捕捉,再用锁相环技术进行跟踪,能够在低信噪比下进行快速载波恢复。仿真结果表明,本算法的同步速度快,捕获的频率范围较宽。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.