Nd:Gd3Ga5O12多晶原料合成及单晶生长研究

通过对晶体生长时和生长后原料挥发物的XRD分析,发现在炉膛内壁上的挥发物质是Ga2O3和Ga2O的混合物,而观察窗口及后加热器内壁上的挥发物主要是Gd2O3。为避免原料中Ga2O3的挥发,按化学计量比配料,在1300℃下,采用固相反应法合成了Nd：Gd3Ga5O12(Nd：GGG)多晶原料。用此多晶原料,采用提拉法进行了Nd：GGG单晶生长研究,所获单晶的荧光发射峰位于1061．54nm。对晶体表面的开裂现象进行了分析。     

Yb3Al5O12激光晶体的生长

采用中频感应提拉法成功生长出Yb3Al5O12(YbAG)激光晶体.通过X射线粉末衍射分析,得出了YbAG晶体的晶胞参数a=1.193799nm,β=90°,V=1.70135nm3;密度为6.62g/cm3.测量了室温下YbAG晶体的吸收光谱和发射光谱特性.研究表明在938nm和968nm处存在Yb3+离子的2个吸收带,能与InGaAs激光二极管(LD)有效耦合,适合激光二极管泵浦;其荧光主峰位于1036nm附近,YbAG晶体的荧光寿命为270μs.     

Yb:Ca5(PO4)3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb：Ca5（PO4）2F（Yb：FAP）晶体。运用化学腐蚀,光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷,以及晶体的位错腐蚀形貌、位错密度及其分布情况,同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知：晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比,出现组分过冷,形成包裹物。且位错密度显著增加。Yb：FAP晶体的各向异性使得晶体在（10 10）面的位错蚀坑形状、大小以及深度不同,而（0001）面的位错蚀坑呈规则的六边形;这也是晶体中形成亚晶界结构的主要原因。讨论了减少晶体中缺陷的一些方法。     

Yb∶Ca_5(PO_4)_3F激光晶体的生长缺陷

采用提拉法生长了质量优异的Yb∶Ca5(PO4)3F(Yb∶FAP)晶体。运用化学腐蚀,光学显微镜、扫描电子显微镜以及能量散射光谱仪观察了该晶体中的生长条纹和包裹物等宏观缺陷,以及晶体的位错腐蚀形貌、位错密度及其分布情况,同时观察了晶体中亚晶界的形态。由晶体中位错的径向变化以及生长条纹可知:晶体在生长过程中为微凸界面生长。高温下CaF2的挥发造成了在晶体生长后期熔体中组分偏离化学计量比,出现组分过冷,形成包裹物,且位错密度显著增加。Yb∶FAP晶体的各向异性使得晶体在(10 10)面的位错蚀坑形状、大小以及深度不同,而(0001)面的位错蚀坑呈规则的六边形;这也是晶体中形成亚晶界结构的主要原因。讨论了减少晶体中缺陷的一些方法。     

高掺杂浓度Yb:YAG晶体的生长及激光性能

用引上法生长了30％Yb:YAG(摩尔分数,下同）晶体,研究了晶体的生长工艺参数和退火工艺参数;用940nm吸收系数表征了Yb^3 离子在Yb:YAG晶体中的分布情况,结果表明：Yb^3 离子在Yb:YAG晶体中分布均匀,研究了晶体微片的激光特性,用钛定石激光器泵浦30％Yb:YAG微片,获得了1．053μm的高效激光输出。     

Yb:Gd3Ga5O12多晶粉体的制备及性能表征

采用溶胶-凝胶法合成了Yb:Gd3Ga5O12(Yb:GGG)多晶粉体.利用X射线衍射、热重-差热分析、扫描电镜、红外光谱、荧光光谱测试手段,对前驱体及煅烧的粉体的结构、形貌及光谱性能进行了研究.结果表明:950 ℃煅烧的粉体已是属于体心立方的晶体结构的Yb:GGG纯相.热重-差热分析表明:Yb:GGG超细粉体的总的质量损失为29.13%,初晶化温度在830.6 ℃附近,粉体在1 246 ℃左右晶化程度较高.随着煅烧温度的提高前驱粉体粒度不断增加,形成Yb:GGG纯相的最佳的煅烧温度为950 ℃,所获得的纳米粉体粒度约为80～100 nm,粒径均匀、分散性和流动性较好.荧光光谱表明,主要发射峰位于1 030 nm,是Yb3 的基态2F7/2与激发态2F5/2能级跃迁导致的荧光发射.     

浮区法生长Yb3Fe5O12晶体及其磁光特性

用移动熔剂浮区法研究从Yb_2O_3-Fe_2O_3体系中生长Yb_3Fe_5O_(12)的可能性,分析了Yb_3Fe_5O_(12)为唯一固相区域内的大致相关系。找出了合适的助熔剂配比(Yb_2O_3: Fe_2O_3=20:80)及晶体的生长条件。并生长出了Yb_3Fe_5O_(12)单晶。测量了诙晶体的磁光性能,在λ>1.3μm时,其Faraday旋转角θ_F不随波长增加而改变。同时,在Y_3Fe_5O_(12)中掺入Yb可得到θ_F的温度系数为零的晶体。     

Nd:YVO_4晶体的原料制备及合成条件研究

本文详细介绍了液相法掺钕钒酸钇晶体的原料合成 ,并讨论了影响原料纯度的制备条件。用本方法合成出的原料已生长出 30× 40mm的大尺寸优质掺钕钒酸钇单晶     

铒镱共掺钆镓石榴石激光晶体生长及荧光光谱分析

采用提拉法生长了掺10%(摩尔分数,下同)Yb3+、掺Er3+分别为3%,5%和10%的Er3+:Yb3+:Gd3Ga5O12(Er:Yb:GGG)晶体。分析了Er:Yb:GGG晶体的结构和荧光光谱。结果表明:所生长的晶体属于立方晶系,Ia3d空间群。在980nm激光激发下,晶体样品在1000～1600nm范围内存在3个较强的发射带,相应的发射峰分别位于1030,1471nm和1534nm附近。由于Yb3+对Er3+的敏化作用,随着Er3+掺量的递增,1030nm处的发射峰强度逐渐减弱,1471nm和1534nm处的发射峰强度逐渐增强。计算了各个发射峰的受激发射截面积,铒和镱离子掺量为10%的晶体(10%Er:10%Yb:GGG)的受激发射截面高达2.0073×10–18cm2,可以产生较强的1534nm人眼安全波段的激光。     

溶胶-凝胶低温燃烧法制备Yb,Ho∶Gd_3Ga_5O_(12)纳米粉体

采用溶胶-凝胶低温燃烧法制得了Yb,Ho∶GGG纳米粉体。X射线衍射分析结果表明900℃煅烧得结晶良好的Yb,Ho∶GGG纯相。IR光谱分析发现900℃煅烧的样品在617 cm-1附近出现一系列GGG的晶格振动吸收峰。SEM观察发现Yb,Ho∶GGG纳米粉体粒径在20 nm左右,粒度均匀,无团聚。荧光光谱分析表明样品的最强发射峰位于1200 nm,是由Ho3+的5I6-5I8能级跃迁引起的荧光发射,且发现Yb3+-Ho3+间存在能量传递。     

掺钕钆镓石榴石晶体的激光性能

采用提拉法生长了Nd：Gd3Ga3O12（Nd：GGG）晶体。切割后的样品经过端面抛光,测试了荧光光谱、吸收光谱和激光性能。荧光光谱表明：晶体的最强的荧光发射峰位于1062nm,是Nd^3＋的4^F3/2-4^I11/2谱项导致的荧光发射。由吸收光谱发现：Nd：GGG晶体的最强吸收峰位于808nm,表明该晶体适合于激光二极管泵浦．并且吸收峰强度随掺杂离子浓度的增加而增加。激光性能测试结果表明：激光二极管泵浦时光-光转换效率为33.＋8％,斜效率为57.8％。     

Deep red upconversion photoluminescence in Er3+-doped Yb3Ga5O12 nanocrystalline garnet

The nanocrystalline single-phase Er³⁺-doped Yb₃Ga₅O₁₂ garnets have been prepared by the sol-gel combustion technique with a crystallite size of ≈30 nm. The presence of Yb³⁺ in garnet hosts allows their efficient excitation at the ≈977 nm wavelength. The Er³⁺ doping of Yb₃Ga₅O₁₂ garnet host results in deep red Er³⁺: ⁴F_9/2 → ⁴I_15/2 upconversion photoluminescence (UCPL) emission. The dominance of the red UCPL emission over the green Er³⁺: ⁴F_7/2/²H_11/2/⁴S_3/2 → ⁴I_15/2 component was investigated using the measurement of the steady-state and time-dependent Er³⁺ and Yb³⁺ emission spectra in combination with the power-dependent UCPL emission intensity. The proposed upconversion mechanism is discussed in terms of the Er³⁺ → Yb³⁺ energy back transfer process as well as Yb³⁺(Er³⁺) → Er³⁺ energy transfer and Er³⁺ ↔ Er³⁺ cross-relaxation processes. The studied Er³⁺-doped Yb₃Ga₅O₁₂ garnet may be utilized as a red upconversion emitting phosphor.     

Er3+ cross-section spectra of Er3+/Pr3+:Gd3Ga5O12 single-crystal: Pr3+-codoping effect

Fluorescence and absorption spectra at 530 nm (²H_11/2→⁴I_15/2), 560 nm (⁴S_3/2→⁴I_15/2), 660 nm (⁴F_9/2→⁴I_15/2), 980 nm (⁴I_11/2→⁴I_15/2), 1530 nm (⁴I_13/2→⁴I_15/2), and 2710 nm (⁴I_11/2→⁴I_13/2) of Er³⁺ in Gd₃Ga₅O₁₂ single-crystal codoped with Pr³⁺ have been measured. Judd-Ofelt analysis yields the intensity parameters Ω₂ = (0.68 ± 0.03) × 10⁻²⁰ cm², Ω₄ = (0.60 ± 0.07) × 10⁻²⁰ cm², and Ω₆ = (0.90 ± 0.17) × 10⁻²⁰ cm². A comparison with previously reported values of Er³⁺-only doping case shows that Pr³⁺-codoping causes slight change of both Ω₂ and Ω₄, while onefold increase of Ω₆. From calculated radiative rates and measured fluorescence spectra, Er³⁺ emission cross-section spectra were calibrated at first. Then, the absorption cross-section spectra were calculated using McCumber relation. In parallel, the absorption cross-section spectra were also obtained from the measured absorption spectrum, and compared with those obtained from the McCumber relation. The comparison shows that both methods give consistent result of absorption cross-section spectrum. Further comparison with Er³⁺-only doping case shows that Pr³⁺-codoping causes considerable change of Er³⁺ cross-section value. In spectrally mixing regions of Er³⁺ and Pr³⁺, Pr³⁺ emission affects little the determination of Er³⁺ emission cross-section as Pr³⁺ fluorescence is much weaker than Er³⁺ fluorescence due to low Pr³⁺ concentration.     

Layered Y3Al5O12:Pr/Gd3(Ga,Al)5O12:Ce optical ceramics: Synthesis and photo-physical properties

We report a study of composite scintillating ceramics based on coupled layers of two different garnets, namely Ce-doped gadolinium gallium aluminium (GGAG:Ce) and Pr-doped yttrium aluminium (YAG:Pr), fabricated by hot isostatic pressing. Two samples were prepared, with different GGAG:Ce layer thickness, 120 µm and 690 µm respectively, but with a comparable overall thickness of 1.4 mm. The key finding is that the material architecture strongly determines the scintillation response. The radioluminescence is that expected from the irradiated material when a thick layer of ceramic is exposed to X-rays. Conversely, exposing a thin layer allows a non-null probability —about 0.3% for 120 µm of GGAG— of finding an X-ray photon in the underlying layer, and thus radioluminescence from both materials is recorded. We believe these results can extend the potential of layered optical ceramics for advanced devices, such as energy- and direction-sensitive X-ray detectors.     

Gd3Al5O12：Eu^3＋柠檬酸盐硝酸盐燃烧法合成及其发光性能研究

采用柠檬酸盐硝酸盐燃烧法，在较低的温度（900℃）下成功地合成单一晶相Gd3Al5O12：Eu^3＋发光粉体，紫外激发荧光光谱分析表明，粉体615m和593m荧光发射源于Eu^3＋的^5D0-^7F2和^5D0-^7F1跃迁．该方法中各工艺条件（如pH值、柠檬酸／金属离子比、煅烧温度）对Gd3Al5O12：Eu^3＋发光性能均有影响，通过试验得出了获得最佳发光性能荧光粉体的工艺参数．     

Modeling and Monte Carlo simulation on photothermal effect in Gd3Al3Ga2O12:Ce3+/Y3Al5O12:Cr3+ layered composite ceramic

Layered composite ceramics have wide application in solid-state lasers. However, the photothermal effect in the layered ceramics has not been clarified, due to the interface effect between layers. In this work, the model of photon propagation and thermal distribution in the Gd₃Al₃Ga₂O₁₂:Ce³⁺/Y₃Al₅O₁₂:Cr³⁺ layered ceramics are established. The property of photon absorption, reflection, transmission, and thermal distribution are studied by combining the Monte Carlo method and the convolution method. It is found that the photon absorption distribution and thermal distribution of this layered ceramics show the gradient change. Furthermore, this change is strongly dependent on the type, beam width, and power of laser. The temperature of layered ceramics induced by Gaussian beam is higher than that induced by flat circular beam. This work provides a useful research method for the design of layered ceramic materials with excellent scintillation performance.     

Gd3（1-x）Al5O12：RE3X分立材料芯片制备及发光性能研究

将组合材料芯片技术中四元组合法应用于新型发光材料Gd3（1-x）Al5O12：RE3X的RE激活剂和敏化剂种类优选.由Gd3Al5O12基体材料芯片获得如下的研究结果：1）在紫外激发下（254 nm）Gd3（1-x）Al5O3：Eu3x材料具有红色荧光性能;2）Pr（n（Pr）：n（Eu）＜1：10）、Ce（n（Ce）：n（Eu）＜1：10）共掺杂时会降低发光强度.光谱分析表明：Pr、Ce能级嵌入,使得激活剂和敏化剂发生共振能量传递,是Gd3Al5O12：Eu（简称为GAG：Eu）发光效率降低的主要原因.筛选结果得到柠檬酸盐硝酸盐溶胶凝胶法制备粉体筛选实验结果验证.实验结果表明组合法在发光材料开发上具有高效性.