Strong coupling between nanoscale metamaterials and phonons

We use split ring resonators (SRRs) at optical frequencies to study strong coupling between planar metamaterials and phonon vibrations in nanometer-scale dielectric layers. A series of SRR metamaterials were fabricated on a semiconductor wafer with a thin intervening SiO(2) dielectric layer. The dimensions of the SRRs were varied to tune the fundamental metamaterial resonance across the infrared (IR) active phonon band of SiO(2) at 130 meV (31 THz). Strong anticrossing of these resonances was observed, indicative of strong coupling between metamaterial and phonon excitations. This coupling is very general and can occur with any electrically polarizable resonance including phonon vibrations in other thin film materials and semiconductor band-to-band transitions in the near to far IR. These effects may be exploited to reduce loss and to create unique spectral features that are not possible with metamaterials alone.     

Organic field-effect transistors containing a SiO2 nanoparticle thin film as the gate dielectric

In this article, we report the fabrication of organic field-effect transistors using self-assembled SiO2 as a gate dielectric material and pentacene as a semiconductor. The dielectric layer was self-assembled with 10 layers of SiO2 nanoparticles 45 nm in diameter, and its breakdown field was larger than 0.57 MV/cm. Being a low-cost and low-temperature process, the layer-by-layer self-assembly is particularly suitable for organic field-effect transistor fabrication. The pentacene was thermally evaporated on the substrate under high vacuum at the room temperature. The fabricated transistor has a threshold voltage of 0.3 V, field-effect mobility of 0.05 cm2/Vs, and slope of 1.4 V/decade.     

PECVD法低温制备二氧化硅薄膜(英文)

针对金属层间介质以及MEMS等对氧化硅薄膜的需求,介绍了采用等离子增强型化学气相沉积(PECVD)技术,以SiH4和N2O为反应气体,低温制备SiO2薄膜的方法.利用椭偏仪和应力测试系统对制得的SiO2薄膜的厚度、折射率、均匀性以及应力等性能指标进行了测试,探讨了射频功率、反应腔室压力、气体流量比等关键工艺参数对SiO2薄膜性能的影响.结果表明:SiO2薄膜的折射率主要由N2O/SiH4的流量比决定,而薄膜均匀性主要受电极间距以及反应腔室压力的影响.通过优化工艺参数,在低温260℃下制备了折射率为1.45～1.52、均匀性为±0.64%、应力在-350～-16MPa可控的SiO2薄膜.采用该方法制备的SiO2薄膜均匀性好、结构致密、沉积速率快、沉积温度低且应力可控,可广泛应用于集成电路以及MEMS器件中.     

Improved silica-zirconia sol synthesis for fabrication of a single-mode embedded dielectric channel waveguide with low transmission losses

A novel inorganic-organic hybrid silica-zirconia solgel material, which can generate 10 microm thick film in a single spin-coating process, has been developed and employed in the fabrication of an embedded dielectric channel waveguide on a silica buffer layer of a silicon substrate. The fabricated channel waveguide core had steep ridge walls, good smoothness, and high robustness, and the novel sol synthesis enabled a precise control of the geometrical and optical parameters of the embedded dielectric channel waveguide. In the 1.55 microm telecommunication window, the fundamental modes TE(00) and TM(00) in the embedded channel waveguide had low transmission losses of 0.40 +/- 0.03 dB/cm and 0.59 +/- 0.03 dB/cm, respectively.     

Ag/SiO_2/Ag组成的三角形纳米柱的光学及传感特性

研究了一种Ag/SiO2/Ag组成的三角形纳米柱的LSPR消光光谱特性及其传感特性.时域有限差分（FDTD）法计算结果表明,三棱柱结构在中间夹层SiO2后,消光光谱峰值出现红移现象,并伴随着折射率灵敏度的增加.随着中间介质层厚度的增加,上下两层金属间表面等离子体耦合逐渐减弱,消光光谱峰值红移速度减慢.当介质层厚度为60nm时,金属层间的表面等离子体耦合消失,消光光谱与折射率灵敏度不再发生变化.对于实际制作时可能出现尖角钝化的三棱柱结构,中间介质层仍然表现出对其光学及传感特性的良好的调节作用.     

Surface acoustic wave properties of proton-exchanged LiNbO3 waveguides with SiO2 film

Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.     

Characteristics of SiO2/Si3N4/SiO2 stacked-gate dielectrics obtained via atomic-layer deposition

An interpoly-stacked dielectric film with a SiO2/Si3N4/SiO2/Si (ONO) structure was prepared via the atomic-layer deposition method. The multilayer structure of the ONO film with triple interfaces was investigated via medium-energy ion scattering (MEIS). A few defects in the interface layer of the ONO structure were detected. From the X-ray photoelectron spectroscopy (XPS) results, it was presumed that the interface layer with defects in the MEIS result is due to the formation of an oxynitride layer on the unstable and rougher Si3N4 layer via. By measuring the I-V characteristics, the leakage current density and breakdown field of the ONO film were determined to be 3.4 x 10(-9) A/cm2 and 10.86 MV/cm, respectively. By estimation the C-V curve, the flat band (V(FB)) of the ONO film shifted to a negative voltage (-1.14 V), the dielectric constant (K(ONO)) of the ONO film was 5.79, and the effective interface-trapped charge density of the ONO film was about 4.96 x 10(11)/cm2.     

Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.     

a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical filters

We examined the optical properties of a-Si:H/SiO2 multilayer films fabricated by radio-frequency magnetron sputtering for optical bandpass filters (BPFs). Because of the high refractive-index contrast between a-Si:H and SiO2, the total number of layers of an a-Si:H/SiO2 multilayer can be relatively small. We obtained an a-Si:H refractive index of 3.6 at lambda = 1550 nm and its extinction coefficient k < 1 x 10(-4) and confirmed by Fourier-transform infrared spectroscopy that such small k is influenced by the Si-H bonding in the film. We fabricated a-Si:H/SiO2 BPFs by using in situ optical monitoring. Thermal tuning of a-Si:H/SiO2 BPF upon a silica substrate was also performed, and a thermal tunability coefficient of 0.07 nm/degree C was obtained.     

低温沉积SiO2薄膜工艺的研究

利用等离子体增强化学气相沉积系统（PECVD）研究SiO2薄膜低温制备工艺,分析工艺条件对薄膜性能参数影响,通过调节射频功率优化薄膜应力,在150℃低温下获得接近零应力SiO2薄膜,薄膜沉积速率约为40nm／min,片内均匀性优于3％,折射率为1．46±0．003,并具有良好的附着力和抗蚀性能。由于沉积温度低,薄膜性能好,因此可以作为绝缘层或介质层,应用于柔性电子领域。     

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding

Optical nonreciprocal devices with a silicon guiding layer fabricated by wafer bonding are proposed. The optical nonreciprocal devices are composed of a magneto-optic waveguide with a magnetic garnet/Si/SiO2 structure. Nonreciprocal characteristics are obtained by an evanescent field penetrating into the upper magnetic garnet cladding layer. Several kinds of the optical nonreciprocal device are investigated with the magneto-optic waveguide and designed at a wavelength of 1.55 microm. As a preliminary experiment, wafer bonding between Gd3Ga5O12 and Si was studied. Wafer bonding was successfully achieved with heat treatment at 220 degrees C in H2 ambient.     

The influence of a waveguiding structure on the excitonic luminescence of anatase thin films

Spectral and spatial properties of the excitonic luminescence of TiO₂ (anatase) waveguide layers grown by the atomic layer deposition on dielectric and metal substrates were investigated at low temperatures. Significant changes in self-trapped-excitonic (STE) spectra were observed in the direction nearly parallel to the film surface. The characteristic broad band STE emission spectrum of anatase peaking at ∼2.3 eV was transformed into directed spectrally narrow polarised bands. It was concluded that the leaky modes of the planar waveguide were responsible for this effect.     

In2O3 nanocrystal memory with the barrier engineered tunnel layer

In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.     

Determination of the Director Alignment in a Ferroelectric Liquid Crystal Device by Observation of Optical Modes

Abstract

By observing the angular dependence of the reflectivity of a ferroelectric liquid crystal (FLC) cell fabricated from glass pyramids with 60° evaporated SiO aligning layers it has been possible to sensitively probe the configuration of the optical dielectric tensor in the FLC layer. It is found that the optical data can best be explained by a uniaxial slab twisted from the alignment axis; this is consistent with the recently proposed chevron structure.     

ZnS:Mn沉积温度对薄膜电致发光器件亮度的影响

采用丝网印刷技术,在Al2O3陶瓷基板上印刷、高温烧结内电极及绝缘层,制备出陶瓷厚膜基板,进而制备了新型厚膜电致发光显示器(TDEL).整个器件结构为陶瓷基板/内电极/厚膜绝缘层/发光层/薄膜绝缘层/ITO透明电极.研究不同基板沉积温度对发光层性能的影响,并对器件的亮度-电压、亮度-频率进行测量.结果显示较高的ZnS:Mn沉积温度明显提高了无机发光器件的发光亮度.其原因主要是由于高的沉积温度提高了ZnS:Mn的成膜质量,提高膜层微晶尺寸大小,从而发光亮度提高.但是我们发现温度继续提高的同时,器件发光亮度趋于饱和,分析原因是由于掺杂Mn浓度过高,影响了发光效果.     

Beta-MnO2/SiO2 core-shell nanorods: synthesis and dielectric properties

Large-scale beta-MnO2/SiO2 core-shell nanorods were synthesized by hydrolysis process. The product was characterized by XRD, EDS, SEM and TEM. The thickness of the SiO2 shell layer is about 3 nm approximately 5 nm, which can be tuned by changing the amount of tetraethyl orthosilicate (TEOS) and the reaction time. The dielectric properties of the synthesized core-shell nanorods at the temperature range from 373 K to 773 K in X-band were investigated in detail and the mechanism of the dielectric response was discussed. The dielectric loss of the SiO2-coated MnO2 nanorods at 773 K was about twice than that at 373 K. The high dielectric loss is mainly attributed to the interfacial polarization and the electromagnetic impedance match between the SiO2 shell layer and MnO2 core layer. The quantitative formula between the permittivity of beta-MnO2/SiO2 core-shell nanorods and the thickness of the SiO2 shell is established, which can be used to tune the dielectric properties of the core-shell nanorods through controlling the thickness of the SiO2 shell layer.     

Fabrication and characterization of nanopore array

A nanopore array with diameter of approximately 30 nm was fabricated by use of focused ion beam (FIB) scanning and thin film coating on Si(100). A thin film of SiO2 with thickness of 200 nm (used as sacrificial layer) was coated by physical evaporation deposition (PVD) first. Next, the thin films of Aluminum with thickness of 500 nm were coated on the surface of SiO2 thin film. A window with an area of 2 x 2 mm2 was opened by reactive ion etching from bottom side and reached to the thin film of SiO2. After that, a fine controlled FIB milling with bitmap function (milling according to a designed pattern in a defined area) was used to scan the area. Signal is obtained by a sensor inside the vacuum chamber collecting secondary electrons emitted from the sputtered material when the beam reach the layer of SiO2. Stopping the milling process at this moment, the nanopore array was derived after removing the sacrificial layer by wet chemical etching. The nanopore arrays were characterized using transmission electron microscopy (TEM) after the FIB drilling.     

Fabrication of multilayered Ge nanocrystals by magnetron sputtering and annealing

Multilayered Ge nanocrystals embedded in Si and Ge oxide films have been fabricated on Si?substrate by a (SiO(2)+Ge)/(SiO(2)+GeO(2)) superlattice approach, using an rf magnetron sputtering technique with a Ge+SiO(2) composite target and subsequent thermal annealing in N(2) ambient at 750?°C for 5?min. X-ray diffraction (XRD) measurements indicated the formation of Ge nanocrystals with an average size estimated to be 9.8?nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode shifted downwards to 298.8?cm(-1), which was caused by quantum confinement of phonons in the Ge nanocrystals. X-ray photoemission spectroscopy (XPS) analysis demonstrated that the Ge chemical state is mainly Ge(0) in the (SiO(2)+Ge) layer and Ge(4+) in the (SiO(2)+GeO(2)) layer in the superlattice structure. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (SiO(2)+Ge) layers, and had good crystallinity. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction compared with the conventional Ge-ncs fabrication method using a single and thick SiO(2) matrix film.     

（Ba0.6Sr0．4）Ti1-xZnxO3薄膜的介电调谐性能

利用溶胶-凝胶法在Pt／TiO2/SiO2/Si衬底上制备了（Ba0．6Sr0．4）Ti1-xZnxO3（BSTZ）薄膜,用X射线衍射和扫描电镜分析测定了BSTZ的微结构和薄膜的表面形貌,研究Zn掺杂量对其介电调谐性能的影响,结果表明,随Zn含量的增加BSTZ物相无明显变化,其介电常数、调谐量先增加后降低,但介电损耗却先降低后增加。在室温1MHz下,1．5m01％Zn掺杂BSTZ薄膜有最大的调谐量54．26％;2．5mol％Zn掺杂BSTZ薄膜有最低的介电损耗0．0148和最大的优值因子30．3。     

Helical anisotropic magnetic film

The magnetic coupling between the magnetization in two nonmagnetostrictive Ni-Fe layers separated by a SiO layer has been investigated by means of a transverse susceptibility measurement. The main results are that 1) the coupling energy Ec per Unit area of the multilayered film has a form ofE_{c}= -A cos (phi_{1}-phi_{2}), wherephi_{1}-phi_{2}is the angle between the magnetization vectors in the two Ni-Fe layers, and 2) the dependence of the coupling constant on the thickness b of the intermediate SiO layer can be interpreted quantitatively by the combination of the coupling energy due to Néel's topography model and that due to the magnetostatic interaction between the magnetic free poles appearing at the edges of the two Ni-Fe layers. The former coupling energy is given byE_{c1} = -frac{p}{2sqrt{2}}omega^{2}M^{2} exp(-sqrt{2}pb) cos (phi_{1}-phi_{2})wherep=2pi/LandLandware the wavelength and the amplitude of the undulation of the interface between Ni-Fe and SiO layers, respectively. The latter is given byE_{c2} = frac{2M^{2}D^{2}}{R} ln (frac{R}{D+b}) cos (phi_{1}-phi_{2})whereDis the thickness of each Ni-Fe layer, andRis the radius of the film.