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1.
绒面ZnO:Al(ZAO)透明导电薄膜的制备 总被引:3,自引:0,他引:3
利用中频交流磁控溅射方法,采用氧化锌铝(98wt%ZnO 2wt%A12O3)陶瓷靶材制备了绒面ZAO(ZnO:Al)薄膜,考察了所制备的绒面ZAO薄膜与绒面SnO2:F薄膜在绒度、粗糙度、表面形貌以及电学性质的差异,利用原子力显徽镜对薄膜表面形貌进行了分析并计算出薄膜表面粗糙度,利用紫外可见分光光度计和电阻测试仪测量了薄膜的光学、电学特性。结果表明:所制备的绒面ZAO薄膜具有与绒面SnO2:F薄膜相比拟的各种性能,在非晶硅太阳电池中具有潜在的应用前景。 相似文献
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将磁控溅射和热丝化学气相沉积相结合,制备出超高浓度钛掺杂的氢化非晶硅薄膜。通过光发射谱(OES)分析了热丝加热前后直流溅射辉光特性,结果表明热丝加热与否对直流溅射过程的影响不大。俄歇电子能谱显示钛在薄膜中是均匀分布的,改变磁控溅射的功率可控制薄膜中钛的含量,薄膜在可见和红外光的吸收随钛浓度的增加而显著增强。掺钛非晶硅薄膜仍表现出半导体特性,电阻率随着温度的降低而提高,满足变程跳跃电导输运机制。采用激光熔融(PLM)对薄膜进行退火,薄膜晶化率达50%以上。晶化的掺钛硅薄膜仍保持较高的可见-红外波段的光吸收。 相似文献
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将磁控溅射和热丝化学气相沉积相结合,制备出超高浓度钛掺杂的氢化非晶硅薄膜.通过光发射谱(OES)分析了热丝加热前后直流溅射辉光特性,结果表明热丝加热与否对直流溅射过程的影响不大.俄歇电子能谱显示钛在薄膜中是均匀分布的,改变磁控溅射的功率可控制薄膜中钛的含量,薄膜在可见和红外光的吸收随钛浓度的增加而显著增强.掺钛非晶硅薄膜仍表现出半导体特性,电阻率随着温度的降低而提高,满足变程跳跃电导输运机制.采用激光熔融(PLM)对薄膜进行退火,薄膜晶化率达50%以上.晶化的掺钛硅薄膜仍保持较高的可见-红外波段的光吸收. 相似文献
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系统研究了非晶硅本征层的沉积温度和激光刻线功率对薄膜电池组件性能的影响。各非晶硅薄膜(P层、I层和N层)采用等离子体增强化学气相沉积(PECVD)制备。I层的光学带隙随着沉积温度的升高而降低,同时也引起电池转换效率的变化。采用傅里叶红外分析检测I层的H含量及键合方式,H含量及键合方式的变化是引起光学带隙变化的根本原因。激光刻线的形貌采用光学显微镜作微观分析,而采用不同激光功率刻线后,薄膜电池的性能也有所差异,结果显示7.5μJ是最合适的功率。 相似文献
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用热丝法制备优质稳定非晶硅薄膜的研究 总被引:2,自引:0,他引:2
系统地研究了低压热丝化学汽相沉积技术中沉积气压,衬底温度,钨丝温度等参量对氢化非晶硅膜结构,光电特性及稳定性的影响。结果表明,沉积气压是影响非晶硅原最主要参数,在优化沉积参数的条件下制备非晶硅,其稳定性有很大改进。 相似文献
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系统研究两种不同形态的硅氧合金薄膜,用甚高频PECVD系统制备的非晶硅氧和纳米硅氧薄膜的特性,以及其在纳米硅薄膜叠层薄膜太阳电池中的应用。实验中主要通过对不同的气体流量比的优化、沉积功率和沉积压力的优化,分别制备出光学带隙约为2.1 e V,折射率约为3的a-SiO_x∶B∶H薄膜,作为非晶硅顶电池的p1层,以及带隙为2.2~2.5 e V,折射率为2.0~2.5,晶化率为20%~50%的nc-SiO_x∶P∶H薄膜,作为非晶硅/纳米硅叠层电池的中间反射层和纳米硅的底电池n2层。最后将优化后的a-SiO_x∶B∶H和nc-SiO_x∶P∶H薄膜应用到非晶硅/纳米硅薄膜叠层电池中,在0.79 m~2的玻璃基板上制备出初始峰值功率为101.1 W、全面积初始转换效率为12.8%、稳定峰值功率为87.3 W、全面积稳定转换效率为11.1%的非晶硅/纳米硅叠层电池。 相似文献
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TCO and light trapping in silicon thin film solar cells 总被引:6,自引:0,他引:6
For thin film silicon solar cells and modules incorporating amorphous (a-Si:H) or microcrystalline (μc-Si:H) silicon as absorber materials, light trapping, i.e. increasing the path length of incoming light, plays a decisive role for device performance. This paper discusses ways to realize efficient light trapping schemes by using textured transparent conductive oxides (TCOs) as light scattering, highly conductive and transparent front contact in silicon p–i–n (superstrate) solar cells. Focus is on the concept of applying aluminum-doped zinc oxide (ZnO:Al) films, which are prepared by magnetron sputtering and subsequently textured by a wet-chemical etching step. The influence of electrical, optical and light scattering properties of the ZnO:Al front contact and the role of the back reflector are studied in experimentally prepared a-Si:H and μc-Si:H solar cells. Furthermore, a model is presented which allows to analyze optical losses in the individual layers of a solar cell structure. The model is applied to develop a roadmap for achieving a stable cell efficiency up to 15% in an amorphous/microcrystalline tandem cell. To realize this, necessary prerequisites are the incorporation of an efficient intermediate reflector between a-Si:H top and μc-Si:H bottom cell, the use of a front TCO with very low absorbance and ideal light scattering properties and a low-loss highly reflective back contact. Finally, the mid-frequency reactive sputtering technique is presented as a promising and potentially cost-effective way to up-scale the ZnO front contact preparation to industrial size substrate areas. 相似文献
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ZnO:Al绒面透明导电薄膜的制备及分析 总被引:1,自引:0,他引:1
利用中频脉冲磁控溅射方法,采用Al掺杂(质量百分比2%)的Zn(纯度99.99%)金属材料为靶材制备平面透明导电ZnO:Al(ZAO)薄膜。利用湿法腐蚀方法,将平面ZAO薄膜在0.5%的稀盐酸中浸泡一定时间后,形成表面凹凸起伏的绒面结构。研究了平面ZAO薄膜的结构特性以及衬底温度、溅射功率和腐蚀时间对绒面ZAO薄膜表面形貌的影响,并对腐蚀前后薄膜的电阻变化进行了分析。结果表明:高温、低功率条件下制备的绒面ZAO薄膜表面形貌较好,在硅薄膜太阳电池中具有潜在的应用前景。 相似文献
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Tungsten oxide and titanium oxide thin films were prepared by RF reactive magnetron sputter deposition. The stationary and rotating substrate holders were applied to analyze the rotating effect. The optical properties and thicknesses of oxide films were determined by a proposed optical model and the measured transmittance spectra. The dispersed refractive indices of thin films have a wide range distribution in different sputtering conditions. In the situation of rotating substrate holder, the refractive index was lower than that of the stationary substrate holder. Also, amorphous TiO2 structure can be prepared by using rotating substrate holder. The transmittance spectrum of crystalline TiO2 reveals that the textured structure on the film surface affects the transmittance characteristic. 相似文献
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Yung-Bin Chung Dong-Kwon LeeJong-Sung Lim Nong-Moon Hwang 《Solar Energy Materials & Solar Cells》2011,95(1):211-214
The amorphous incubation layer, which is formed in the initial growth stage of hydrogenated microcrystalline silicon (μc-Si:H) thin film deposited at low temperature, is harmful to the electric properties of film. In this study, the effect of the addition of HCl gas on the reduction of such an amorphous incubation layer was investigated during the silicon deposition on a glass substrate at 220 °C by hot-wire chemical vapor deposition process using the Raman spectroscopy, the X-ray diffraction and the field-emission scanning electron microscopy. In the initial stage of deposition where the silicon film deposited without HCl addition consisted almost entirely of the amorphous incubation layer; highly crystalline silicon films could be deposited with HCl addition. As the flow rate of HCl increased, the crystallinity of silicon films increased but the film growth rate decreased. The surface morphology of films prepared with HCl addition became smoother with smaller grain size than that prepared without HCl. 相似文献
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A multilayer film of Mg and Ni was prepared by dc/ac magnetron sputtering and annealed below 623 K in vacuum to obtain polycrystalline Mg2Ni thin films. The phase transformation during heating process and optical switching properties of the films were investigated. The influence of the original crystalline state of Mg2Ni films on optical switching properties such as transmission, optical band gaps and the cycle times was discussed. The indirect optical band gaps of the fully hydrogenated amorphous Mg2Ni films were estimated by linear extrapolation. 相似文献
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J. Hüpkes B. Rech O. Kluth T. Repmann B. Zwaygardt J. Müller R. Drese M. Wuttig 《Solar Energy Materials & Solar Cells》2006,90(18-19):3054-3060
Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) films were prepared by reactive mid-frequency (MF) magnetron sputtering at high growth rates. By varying the deposition pressure, pronounced differences with respect to film structure and wet chemical etching behavior were obtained. Optimized films develop good light-scattering properties upon etching leading to high efficiencies when applied to amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon-based thin-film solar cells and modules. Initial efficiencies of 7.5% for a μc-Si:H single junction and 9.7% for an a-Si:H/μc-Si:H tandem module were achieved on an aperture area of 64 cm2. 相似文献
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J. Müller O. Kluth S. Wieder H. Siekmann G. Schpe W. Reetz O. Vetterl D. Lundszien A. Lambertz F. Finger B. Rech H. Wagner 《Solar Energy Materials & Solar Cells》2001,66(1-4)
ZnO films prepared by magnetron sputtering on glass substrates and textured by post-deposition chemical etching are applied as substrates for p–i–n solar cells. Using both rf and dc sputtering, similar surface textures can be achieved upon etching. Excellent light trapping is demonstrated by high quantum efficiencies at long wavelengths for microcrystalline silicon solar cells. Applying an optimized microcrystalline/amorphous p-layer design, stacked solar cells with amorphous silicon top cells yield similarly high stabilized efficiencies on ZnO as on state-of-the-art SnO2 (9.2% for a-Si/a-Si). The efficiencies are significantly higher than on SnO2-coated float glass as used for module production. 相似文献
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Al-doped zinc oxide (AZO) and undoped zinc oxide (ZO) films have been prepared by rf magnetron sputtering. Films with low resistivities were achieved by using an Al-doped ZnO target and films with higher resistivities can be obtained by introducing oxygen during deposition. An AZO thin film which was fabricated with an rf power of 180 W, a sputtering pressure of 10 mTorr and thickness of 5000 Å showed the lowest resistivity of 1.4×10−4 Ω cm and transmittance of 95% in the visible range, and ZO film made by reactive sputtering with the above 10% oxygen content had the highest resistivity of 6×1014 Ω cm. 相似文献
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Do Yun Kim 《Solar Energy Materials & Solar Cells》2009,93(2):239-243
Hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by Radio Frequency (RF) magnetron sputtering. For solar-cell applications, a-Si:H layers are required to show low dark conductivity and high photoconductivity and, thus, high photosensitivity. Hydrogen flow ratio and working pressure were mainly adjusted to control bonding configurations and hydrogen concentration in the films. At a high working pressure of 12 mTorr, all of the prepared amorphous and microcrystalline silicon films showed a dominant IR absorption peak at 2100 cm−1, which indicates a Si-H2 stretching mode, grain boundaries and microvoids. When the working pressure was decreased to as low as 3 mTorr with a hydrogen flow ratio of 0.1, the bonding configuration of the films was mainly Si-H as determined by the dominant IR absorption peak at 2000 cm−1, and the photosensitivity of the films was maximized to 760. 相似文献