原位氧等离子体处理对金刚石薄膜电阻率的影响

采用原位氧等离子体刻蚀法对微波等离子体化学气相沉积金刚石薄膜进行了提高电阻率的后处理，暗电流Ⅰ—Ⅴ特性测试结果表明，优化的工艺可使生成膜的电阻率提高4个数量级以上；SEN和XPS分析证实刻蚀处理减少了薄膜表层的石墨和C—H含量，并且未使膜厚产生明显的改变。原位氧等离子体处理是一种简便有效的提高金刚石薄膜电阻率的工艺方法。     

ε-Ga2O3/SiC异质结自驱动型日盲光电探测器

构建合适的异质结是改善光电探测器性能的一种有效方法,为了提升超宽禁带半导体Ga₂O₃薄膜日盲光电探测器的光电性能,采用金属有机化学气相沉积技术在SiC单晶衬底上成功异质外延了高质量的ε-Ga₂O₃薄膜,并制备了ε-Ga₂O₃/SiC异质结光电探测器。探究外延薄膜的晶体结构和吸收光谱可知,单一取向的ε-Ga₂O₃薄膜对日盲区紫外光表现出强烈的吸收特性。得益于较强的内建电场,制备的异质结光电探测器件具有出色的自驱动光电响应特性。在无外置电场条件下具有稳定的深紫外光响应,其具有暗电流低、灵敏度高的特点。在0V偏压、254nm紫外光辐照下,探测器光暗电流比高达10⁴,光响应度达到0.3mA/W,比探测率达到1.45×10¹⁰cm·√Hz/W。ε-Ga₂O₃/SiC自驱动光电探测器的成功研制可为实现零能耗探测器件的制备提供理论思路和实验指导。     

WS2光电探测器光电响应特性研究

为探究WS2的光电探测器光电响应特性,本文以机械剥离法制备WS2晶体薄膜,采用定位转移法在氧化硅片衬底上制备WS2光电探测器,对WS2晶体薄膜进行表征分析,测试并分析了器件的光电性能.实验结果表明:对波长260～850 nm范围的光表现出明显的光响应特性,在630 nm波长的光照条件下的光电流、光响应度以及光探测率最高...     

提高[100]织构金刚石薄膜相组成纯度的工艺方法

针对目前获得的[100]织构金刚石薄膜大多存在非金刚石相含量较多、从而导致薄膜电阻率不高的欠缺，采用两种改进的微波等离子体化学气相沉积(MWPCVD)工艺，即用形核一刻蚀一生长法和形核一刻蚀一生长一刻蚀一生长……循环沉积法，制备出了相组成纯净度较常规沉积工艺显著提高的[100]织构金刚石膜。SEM和XRD分析表明所获得的膜材均具有[100]的择优取向，是[100]织构膜；Raman光谱和SEM对照分析证实膜材中的非金刚石相含量显著降低，尤其是后者的R21nlan光谱中已无非金刚石相峰存在．表明得到的是一种高纯度的[100]织构金刚石薄膜。通过改进沉积工艺技术制备高纯的[100]织构膜是一种简便有效的获得高质量金刚石薄膜的技术途径．，     

Al/ZnO/Ag肖特基二极管的制备与光电特性

以Si(111)为衬底,采用射频磁控溅射与高温退火工艺制备ZnO薄膜.利用X射线衍射、扫描电子显微镜对ZnO薄膜进行表征及结构分析.结果表明,ZnO薄膜具有高度的C轴择优取向,样品表面光洁、平整.在此ZnO薄膜工艺条件下,在石英玻璃衬底上成功制备了Al/ZnO/Ag肖特基二极管紫外探测器.对该紫外探测器的暗电流和365 nm波长光照下的光电流进行了测试.室温下结果表明:Ag和ZnO已形成肖特基接触,根据I-V、C-V测试得到的有效势垒高度分别为0.60 eV和0.53 eV,理想因子为12.6,理论计算得到的空间电荷密度为3.1×1016cm-3.无光照3V偏压时,暗电流为24.19 mA,当用λ=365 nm的光照射Ag/ZnO肖特基结,在3 V偏压时,光生电流为3.28 mA,表明Al/ZnO/Ag紫外探测器有明显的光响应特性.     

喷射CVD法制备金刚石厚膜及其内应力分析

采用直流电弧等离子体喷射CVD法制备出金刚石薄膜,利用扫描电子显微镜(SEM)、Raman光谱及X射线衍射(XRD)等研究基底温度对金刚石厚膜生长特性及内应力的影响。结果表明:950℃基底温度生长的金刚石厚膜结晶性能较好,纯度较高;而850℃和1050℃生长的金刚石厚膜表面呈现大量的孪晶缺陷,结晶度较低,同时出现较多的非金刚石碳,纯度较低。随着基底温度的增加,(111)晶面和(311)晶面的衍射峰强度逐渐增强,(220)晶面的衍射峰强度逐渐降低。850℃和950℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出拉应力,1050℃基底温度生长的金刚石厚膜的宏观应力和微观应力都呈现出压应力。     

CeO_2掺杂对染料敏化太阳能电池光电性能的影响

采用水热法制备不同浓度CeO_2掺杂TiO_2薄膜,并以其为光阳极组装染料敏化太阳能电池(DSSCs),同时考察不同CeO_2掺杂浓度对TiO_2光阳极的光电转换效率的影响。通过X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、X射线光电子能谱(XPS)等测试手段、紫外可见漫反射谱(UV-Vis DRS),对制得的光阳极薄膜进行晶体结构、表面形貌、微观结构、元素价态以及光学特性的表征,并对组装的DSSCs进行光电性能测试。结果表明:适量浓度的CeO_2掺杂可提高太阳能电池中的短路电流与光电转换效率;与纯TiO_2光阳极相比,0.015mol·L~(-1) Ce(NO_3)_3修饰的CeO_2/TiO_2光阳极的光电转换效率从2.44%提高到5.91%。     

氮氧混合气体对沉积金刚石膜的影响

通过对微波等离子体化学气相沉积装置中沉积的金刚石薄膜形貌与质量的检测研究了向甲烷/氢气等离子体中同时添加氮气/氧气对薄膜沉积的影响,获得了包括微米级和纳米级的多种薄膜;采用扫描电子显微镜、拉曼光谱以及X射线扫描对薄膜进行了表征,结果表明:只引入少量氧气后生成了111取向的较大粒度金刚石薄膜,而只引入少量氮气时生成了110取向的纳米级金刚石薄膜;当引入总量一定的氮氧混合气体时,根据氮气与氧气的引入量,所获得的薄膜从微米级多晶金刚石膜延伸至纳米级金刚石薄膜,其晶面组成从混合111与110取向过渡到100取向再过渡到110取向,氧气浓度较高时样品表现为大粒度成膜,随氮气浓度增加晶粒迅速减小,氮气浓度较高时所得样品则是标准的纳米膜;氮气和氧气的引入明显地影响着薄膜的不同粒径、不同微观结构和形貌的改变,表明通过调整气体引入量可以指向性获得具有特定微观结构的薄膜.     

甲烷浓度对金刚石膜沉积质量的影响

在10kW微波等离子化学气相沉积装置中,采用甲烷和氢气作为气源,在直径为50mm的P型(100)单晶硅片上进行了不同甲烷浓度条件下金刚石薄膜的制备研究.利用扫描电子显微镜和激光Raman光谱仪对所制备的金刚石膜进行表征.结果表明:较高的甲烷浓度(2%,体积分数)虽然可以加快金刚石膜生长速率,但离解反应气体的能量相对减弱,晶粒尺寸较小;此时原子氢刻蚀作用也会较弱,非金刚石相含量增加,残留的杂质越来越多,金刚石纯度不高,薄膜的质量较差.随着甲烷浓度的降低,金刚石膜(100)晶面充分显现,薄膜质量逐渐变好.然而过低的甲烷浓度(0.5%,体积分数)会导致有利于金刚石生长的含碳活性基团含量降低,使金刚石膜生长缓慢,晶粒尺寸难以长大.     

不同碳源对金刚石薄膜制备的影响

采用等离子辅助热丝化学气相沉积(PAHFCVD)装置,分别用甲烷和乙醇为碳源进行了金刚石薄膜的制备。并运用X射线衍射仪(XRD)和扫描电子显微镜(SEM)测试手段对沉积的金刚石薄膜进行了观察分析。结果表明,用乙醇制备的金刚石薄膜比甲烷制得的金刚石薄膜的生长率要高,膜的缺陷少、颗粒均匀。     

采用石墨碳源沉积金刚石薄膜

采用固相石墨为碳源，使用微波等离子体化学气相沉积（MPCVD）法，在Si(111)上沉积高质量的金刚石薄膜。研究了在气相碳源浓度处于不饱和状态时，沉积气压和石墨温度对生长速率的影响。利用SEM，XRD，红外光谱分析薄膜表面形貌和质量。结果表明高质量的金刚石薄膜可在H2激发而生的封闭的等离子体气氛下合成，高的有沉积气压和石墨温度会导致高的气相碳源浓度，从而有利于提高薄膜的生长速率，而低的气相碳源浓度有利于沉积薄膜的质量的提高。     

新型光学薄膜研究及发展现状

综述了近年来国内外在新型光学薄膜如高强度激光膜、金刚石及类金刚石膜、软X射线多层膜、太阳能选择性吸收膜和光通信用光学膜的制备及其在器件方面的研究和应用情况，并对光学薄膜的研究进行了展望。     

正交实验法优化六方氮化硼薄膜的制备工艺

采用射频磁控溅射法,在Si(100)衬底上制备了适用于声表面波(SAW)器件的氮化硼(BN)薄膜。通过正交实验法,以薄膜中六方相的纯度和取向为指标,优化了磁控溅射方法制备六方BN(h-BN)薄膜的工艺条件。利用傅里叶变换红外光(FTIR)谱和X射线衍射(XRD)谱对薄膜进行了表征,实验结果表明,溅射功率为300W、无衬底负偏压、温度为400℃和N2∶Ar=7∶8vol.%时可以制备出高纯度且高c-轴择优取向的h-BN。     

高速钢表面渗硅沉积金刚石

研究了利用表面扩散渗硅,在高速钢基底上沉积金刚石的工艺方法,利用ＳＥＭ,Ｘ射线衍射技术检验了金刚石膜和试样表面组织的变化,结果表明,利用表面扩散渗硅,在高速钢表面形成富硅层,使过渡层有较高的含硅量,有利于在高速钢基底上沉积金刚石膜。     

Synthesis of boron-doped diamond/porous Ti composite materials — Effect of carbon concentration

Highly boron-doped diamond films were deposited on porous titanium substrates by hot filament chemical vapor deposition technique.The morphology variation of highly boron-doped diamond films grown on porous titanium substrates was investigated,and the effects of carbon concentration on nucleation density and diamond growth were also studied.The continuous change of surface morphology and structure of diamond film were characterized by scanning electron microscopy.The structures of diamond film and interlayer were analyzed by X-ray diffraction.The quality of boron-doped diamond film was confirmed by visible Raman spectroscopy.The experimental results reveal that surface morphology and quality of boron-doped diamond films are various due to the change of carbon concentration.The thickness of intermediate layer decreases with the carbon concentration increasing.     

Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.     

Growth and Characteristics of n-VO_2/p-GaN based Heterojunctions

n-VO_2/p-GaN based oxide-nitride heterojunctions were realized by growing high quality VO2 films with precisely controlled thickness on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE).The high crystalline quality of the n-VO_2/p-GaN heterojunctions were confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis.The phase transition characteristics of the as-grown n-VO_2/p-GaN heterojunctions were systematically investigated by temperature-dependent resistivity and infrared transmittance measurements.The results indicated that an excellent reversible metal-to-insulator (MIT) transition is observed with an abrupt change in both resistivity and infrared transmittance (IR) at 330 K,which was lower than the 341 K for bulk single crystal VO_2.Remarkably,the resistivity-temperature curve was well consistent with that obtained from the temperature dependent IR transmittance.Meanwhile,the current-voltage characteristics originated from the n-VO_2/p-GaN interface were demonstrated both before and after MIT of VO_2 overlayer,which were attributed to the p-n junction behavior and Schottky contact character,respectively.The design and modulation of the n-VO_2/p-GaN based heterostructure devices will benefit significantly from these achievements.     

Hydrogen distribution in CVD diamond films prepared by DC arcjet operating at gas recycling mode

Hydrogen distribution and content in diamond films deposited by DC arcjet under gas recycling mode was evaluated by nuclear reaction analysis (NRA),The films were characterized using scanning electron microscopy,X-ray diffraction and Raman spectrometry,The NRA results show that the hydrogen content in diamond films was approximately 0.6%(substrate temperature 770℃）,and strongly depended on the substrate temperature,It was that the hydrogen content increased with the increase of the substrate temperature,The possibility of hydrogen trapping in the films was also discussed.     

金刚石半导体器件的研究进展

金刚石因其优异的物理化学特性,被视为下一代电力电子器件的终极材料,金刚石半导体器件的制备受到了科研工作者的广泛关注。文章对金刚石基二极管、开关器件和边缘终止效应等方面的研究成果进行了概述。着重阐述了金刚石半导体器件的电学特性,尤其是,在500 ℃高温条件下得到高正向电流密度,阻断能力大于10 kV,并展现出长程稳定性的肖特基势垒二极管;在金属半导体场效应晶体管与金属氧化物半导体场效应晶体管上制得阻断电压超过2 kV的开关器件。同时,针对加工技术带来的表面缺陷,详细讨论了金刚石器件的表面终止技术和缺陷对器件性能的影响,并展望了金刚石半导体在肖特基势垒二极管及场效应晶体管等领域的应用前景。     

新型金刚石薄膜场电子发射的特性

介绍了用微波ＣＶＤ法制备的一种新型低阈值电压大电流密度金刚石薄膜场发射冷阴极,阈值电压低于１．０９ Ｖ／μｍ,场发射电流密度高达４１８ ｍＡ／ｃｍ２,这是目前文献中报道的最好结果之一．文中还探讨了金刚石薄膜场电子发射机制．