The microstructure characterization of ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallization

The microstructure of the ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallizations (UBMs) was investigated as a function of cooling rate. The ultrasmall eutectic Bi-Sn solder bump, about 50 μm in diameter, was fabricated by using the lift-off method and reflowed at various cooling rates using the rapid thermal annealing system. The microstructure of the solder bump was observed using a backscattered electron (BSE) image and the intermetallic compound was identified using energy dispersive spectroscopy (EDS) and an x-ray diffractometer (XRD). The Bi facet was found at the surface of the ultrasmall Bi-Sn solder bumps on the Au/Cu/Ti UBM in almost all specimens, and the interior microstructure of the bumps was changed with the solidification rate. The faceted and polygonal intermetallic compound was found in the case of the Bi-Sn solder bump on the Au (0.1 μm)/Ni/Ti UBM, and it was confirmed to be the (Au_1−x−yBi_xNi_y)Sn₂ phase by XRD. The intermetallic compounds grown form the Au (0.1 μm)/Ni/Ti UBM interface, and they interrupted the growth of Bi and Sn phases throughout the solder bump. The ultrasmall eutectic Bi-Sn solder bumps on the Au (0.025 μm)/Ni/Ti UBM showed similar microstructures to those on the Au/Cu/Ti UBM.     

Investigation of interfacial reaction between Sn-Ag eutectic solder and Au/Ni/Cu/Ti thin film metallization

This paper reports the formation of intermetallic compounds in Au/Ni/Cu/Ti under-bump-metallization (UBM) structure reacted with Ag-Sn eutectic solder. In this study, UBM is prepared by evaporating Au(500 Å)/Ni(1000 Å)/Cu(7500 Å) /Ti (700 Å) thin films on top of Si substrates. It is then reacted with Ag-Sn eutectic solder at 260 C for various times to induce different stages of the interfacial reaction. Microstructural examination of the interface, using both chemical and crystallographic analysis, indicates that two types of intermetallic compounds are formed during the interfacial reaction. The first phase, formed at the intial stage of the reaction, is predominantly Ni₃Sn₄. At longer times the Ni₃Sn₄ phase transforms into (Cu, Ni)₆Sn₆, probably induced by interdiffusion of Cu and Ni. At this stage, the underlying Cu layer also reacts with Sn and forms the same phase, (Cu,Ni)₆Sn₅. As a result, the fully reacted interface is found to consist of two intermetallic layers with the same phase but different morphologies.     

The effect of intermetallic compound morphology on Cu diffusion in Sn-Ag and Sn-Pb solder bump on the Ni/Cu Under-bump metallization

The eutectic Sn-Ag solder alloy is one of the candidates for the Pb-free solder, and Sn-Pb solder alloys are still widely used in today’s electronic packages. In this tudy, the interfacial reaction in the eutectic Sn-Ag and Sn-Pb solder joints was investigated with an assembly of a solder/Ni/Cu/Ti/Si₃N₄/Si multilayer structures. In the Sn-3.5Ag solder joints reflowed at 260°C, only the (Ni_1−x,Cu_x)₃Sn₄ intermetallic compound (IMC) formed at the solder/Ni interface. For the Sn-37Pb solder reflowed at 225°C for one to ten cycles, only the (Ni_1−x,Cu_x)₃Sn₄ IMC formed between the solder and the Ni/Cu under-bump metallization (UBM). Nevertheless, the (Cu_1−y,Ni_y)₆Sn₅ IMC was observed in joints reflowed at 245°C after five cycles and at 265°C after three cycles. With the aid of microstructure evolution, quantitative analysis, and elemental distribution between the solder and Ni/Cu UBM, it was revealed that Cu content in the solder near the solder/IMC interface played an important role in the formation of the (Cu_1−y,Ni_y)₆Sn₅ IMC. In addition, the diffusion behavior of Cu in eutectic Sn-Ag and Sn-Pb solders with the Ni/Cu UBM were probed and discussed. The atomic flux of Cu diffused through Ni was evaluated by detailed quantitative analysis in an electron probe microanalyzer (EPMA). During reflow, the atomic flux of Cu was on the order of 10¹⁶−10¹⁷ atoms/cm²sec in both the eutectic Sn-Ag and Sn-Pb systems.     

Mechanism of interfacial reaction for the Sn-Pb solder bump with Ni/Cu under-bump metallization in flip-chip technology

Nickel-based under-bump metallization (UBM) has been widely used in flip-chip technology (FCT) because of its slow reaction rate with Sn. In this study, solder joints after reflows were employed to investigate the mechanism of interfacial reaction between the Ni/Cu UBM and eutectic Sn-Pb solder. After deliberate quantitative analysis with an electron probe microanalyzer (EPMA), the effect of Cu content in solders near the interface of the solder/intermetallic compound (IMC) on the interfacial reaction could be probed. After one reflow, only one layered (Ni_1−x,Cu_x)₃Sn₄ with homogeneous composition was found between the solder bump and UBM. However, after multiple reflows, another type of IMC, (Cu_1−y,Ni_y)₆Sn₅, formed between the solder and (Ni_1−x,Cu_x)₃Sn₄. It was observed that if the concentration of Cu in the solders near the solder/IMC interface was higher than 0.6 wt.%, the (Ni_1−x,Cu_x)₃Sn₄ IMC would transform into the (Cu_1−y,Ni_y)₆Sn₅ IMC. The Cu contents in (Ni_1−x,Cu_x)₃Sn₄ were altered and not uniformly distributed anymore. With the aid of microstructure evolution, quantitative analysis, elemental distribution by x-ray color mapping, and related phase equilibrium of Sn-Ni-Cu, the reaction mechanism of interfacial phase transformation between the Sn-Pb solder and Ni/Cu UBM was proposed.     

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with Ti/Cu/Ni under bump metallization during reflow soldering

Intermetallic compound formation and morphology evolution in the 95Pb5Sn flip-chip solder joint with the Ti/Cu/Ni under bump metallization (UBM) during 350°C reflow for durations ranging from 50 sec to 1440 min were investigated. A thin intermetallic layer of only 0.4 μm thickness was formed at the 95Pb5Sn/UBM interface after reflow for 5 min. When the reflow was extended to 20 min, the intermetallic layer grew thicker and the phase identification revealed the intermetallic layer comprised two phases, (Ni,Cu)₃Sn₂ and (Ni,Cu)₃Sn₄. The detection of the Cu content in the intermetallic compounds indicated that the Cu atoms had diffused through the Ni layer and took part in the intermetallic compound formation. With increasing reflow time, the (Ni,Cu)₃Sn₄ phase grew at a faster rate than that of the (Ni,Cu)₃Sn₂ phase. Meanwhile, irregular growth of the (Ni,Cu)₃Sn₄ phase was observed and voids formed at the (Ni,Cu)₃Sn₂/Ni interface. After reflow for 60 min, the (Ni,Cu)₃Sn₂ phase disappeared and the (Ni,Cu)₃Sn₄ phase spalled off the NI layer in the form of a continuous layer. The gap between the (Ni,Cu)₃Sn₄ layer and the Ni layer was filled with lead. A possible mechanism for the growth, disappearance, and spalling of the intermetallic compounds at the 95Pb5Sn/UBM interface was proposed.     

Soldering-induced Cu diffusion and intermetallic compound formation between Ni/Cu under bump metallization and SnPb flip-chip solder bumps

Nickel-based under bump metallization (UBM) has been widely used as a diffusion barrier to prevent the rapid reaction between the Cu conductor and Sn-based solders. In this study, joints with and without solder after heat treatments were employed to evaluate the diffusion behavior of Cu in the 63Sn-37Pb/Ni/Cu/Ti/Si₃N₄/Si multilayer structure. The atomic flux of Cu diffused through Ni was evaluated from the concentration profiles of Cu in solder joints. During reflow, the atomic flux of Cu was on the order of 10¹⁵–10¹⁶ atoms/cm²s. However, in the assembly without solder, no Cu was detected on the surface of Ni even after ten cycles of reflow. The diffusion behavior of Cu during heat treatments was studied, and the soldering-process-induced Cu diffusion through Ni metallization was characterized. In addition, the effect of Cu content in the solder near the solder/intermetallic compound (IMC) interface on interfacial reactions between the solder and the Ni/Cu UBM was also discussed. It is evident that the (Cu,Ni)₆Sn₅ IMC might form as the concentration of Cu in the Sn-Cu-Ni alloy exceeds 0.6 wt.%.     

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)₃Sn₄ layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)₆Sn₅ formed along with (Ni, Cu)₃Sn₄. However, only one (Cu, Ni)₆Sn₅ layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.     

Optimal phosphorous content selection for the soldering reaction of Ni-P under bump metallization with Sn-Ag-Cu solder

Nickel plating has been used as the under bump metallization (UBM) in the microelectronics industry. The electroplated Ni-P UBM with different phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was used to evaluate the interfacial reaction between Ni-P UBM and Sn-3Ag-0.5Cu solder paste during multiple reflow. (Cu,Ni)₆Sn₅ intermetallic compounds (IMC) formed in the SnAgCu solder/Ni-P UBM interface after the first reflow. For three times reflow, (Ni,Cu)₃Sn₄ IMC formed, while (Cu,Ni)₆Sn₅ IMC spalled into the solder matrix. With further increasing cycles of reflow, the Ni-Sn-P layer formed between (Ni,Cu)₃Sn₄ IMC and Ni-P UBM for Ni-10wt.%P and Ni-13wt.%P UBM. However, almost no Ni-Sn-P layer was revealed for the Ni-7wt.%P UBM even after ten cycles of reflow. In consideration of the wettability of Ni-P UBM, the interfacial reaction of SnAgCu/Ni-P, and dissolution of Ni-P UBM, the optimal phosphorous selection in Ni-P UBM was proposed and also discussed.     

Interfacial reactions and compound formation in the edge of PbSn flip-chip solder bumps on Ni/Cu under-bump metallization

Flip-chip technology with the layout of ball grid array has been widely used in today’s microelectronics industry. The elemental distribution in the edge of the solder bump is crucial for its correlation with the bump strength. In this study, Ni/Cu under-bump metallization (UBM) was used to evaluate the intermetallic compound (IMC) formation in the edge of the solder bump between the UBM and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si₃N₄/Si multilayer structure. During reflows, layered-type (Ni_1−xCu_x)₃Sn₄ and island-like (Cu_1−yNi_y)₆Sn₅ IMCs formed in the interface between the solder and UMB, while only the (Cu_1−yNi_y)₆Sn₅ IMC was observed in the sideway of the Ni/Cu UBM. After high-temperature storage (HTS) at 150°C for 1,000 h, both (Cu_1−yNi_y)₆Sn₅ and (Cu_1−zNi_z)₃Sn were found in the sideway of the Ni/Cu UBM. Two other IMCs, (Ni_1−xCu_x)₃Sn₄ and (Cu_1−yNi_y)₆Sn₅, formed in the interface between the solder and UBM. The growth of the (Cu_1−yNi_y)₆Sn₅ IMC was relatively fast during HTS.     

Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology

Flip-chip interconnection technology plays a key role in today’s electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si₃N₄/Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni_1−x,Cu_x)₃Sn₄ was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni_1−x,Cu_x)₃Sn₄ was next to the Ni/Cu UBM. The islandlike (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.     

Metallurgical reaction of the Sn-3.5Ag solder and Sn-37Pb solder with Ni/Cu under-bump metallization in a flip-chip package

Several international legislations recently banned the use of Pb because of environmental concerns. The eutectic Sn-Ag solder is one of the promising candidates to replace the conventional Sn-Pb solder primarily because of its excellent mechanical properties. In this study, interfacial reaction of the eutectic Sn-Ag and Sn-Pb solders with Ni/Cu under-bump metallization (UBM) was investigated with a joint assembly of solder/Ni/Cu/Ti/Si₃N₄/Si multilayer structures. After reflows, only one (Ni,Cu)₃Sn₄ intermetallic compound (IMC) with faceted and particlelike grain feature was found between the solder and Ni. The thickness and grain size of the IMC increased with reflow times. Another (Cu,Ni)₆Sn₅ IMC with a rod-type grain formed on (Ni,Cu)₃Sn₄ in the interface between the Sn-Pb solder and the Ni/Cu UBM after more than three reflow times. The thickness of the (Ni,Cu)₃Sn₄ layer formed in the Sn-Pb system remained almost identical despite the numbers of reflow; however, the amounts of (Cu,Ni)₆Sn₅ IMC increased with reflow times. Correlations between the IMC morphologies, Cu diffusion behavior, and IMC transformation in these two solder systems will be investigated with respect to the microstructural evolution between the solders and the Ni/Cu UBM. The morphologies and grain-size distributions of the (Ni,Cu)₃Sn₄ IMC formed in the initial stage of reflow are crucial for the subsequent phase transformation of the other IMC.     

Effects of substrate metallization of solder/under-bump metallization interfacial reactions in flip-chip packages during multiple reflow cycles

The effects of various elements of substrate metallization, namely, Au, Ni, and P, on the solder/under-bump metallization (UBM), (Al/Ni(V)/Cu) interfacial reactions in flip-chip packages during multiple reflow processes were systematically investigated. It was found that Au and P had negligible effects on the liquid-solid interfacial reactions. However, Ni in the substrate metallization greatly accelerated the interfacial reactions at chip side and degraded the thermal stability of the UBM through formation of a (Cu,Ni)₆Sn₅ ternary compound at the solder/UBM interface. This phenomenon can be explained in terms of enhanced grain-boundary grooving on (Cu,Ni)₆Sn₅ in the molten solder during the reflow process. This could eventually cause the rapid spalling of an intermetallic compound (IMC) from the solder/UBM interface and early failure of the packages. Our results showed that formation of multicomponent intermetallics, such as (Cu,Ni)₆Sn₅ or (Ni,Cu)₃Sn₄, at the solder/UBM interface is detrimental to the solder-joint reliability.     

Failure Morphology after the Drop Impact Test of the Ball Grid Array Package with Lead-Free Sn-3.8Ag-0.7Cu on Cu and Ni Under-Bump Metallurgies

High strain-rate drop impact tests were performed on ball grid array (BGA) packages with lead-free Sn-3.8Ag-0.7Cu solder (in wt.%). Plated Ni and Cu under-bump metallurgies (UBMs) were used on the device side, and their drop test performances were compared. Failure occurred at the device side, exhibiting brittle interfacial fracture. For Ni UBM, failure occurred along the Ni/(Cu,Ni)₆Sn₅ interface, while the Cu UBM case showed failure along the interface between two intermetallics, Cu₆Sn₅/Cu₃Sn. However, the damage across the package varied. For Cu UBM, only a few solder balls failed at the device edge, whereas on Ni UBM, many more solder bumps failed. The difference in the failure behavior is due to the adhesion of the UBM and intermetallics rather than the intermetallic thickness. The better adhesion of Cu UBM is due to a more active soldering reaction than Ni, leading to stronger chemical bonding between intermetallics and UBM. In our reflow condition, the soldering reaction rate was about 4 times faster on Cu UBM than on Ni UBM.     

Interfacial reaction and joint reliability of fine-pitch flip-chip solder bump using stencil printing method

This study was focused on the formation and reliability evaluation of solder joints with different diameters and pitches for flip chip applications. We investigated the interfacial reaction and shear strength between two different solders (Sn-37Pb and Sn-3.0Ag-0.5Cu, in wt.%) and ENIG (Electroless Nickel Immersion Gold) UBM (Under Bump Metallurgy) during multiple reflow. Firstly, we formed the flip chip solder bumps on the Ti/Cu/ENIG metallized Si wafer using a stencil printing method. After reflow, the average solder bump diameters were about 130, 160 and 190 μm, respectively. After multiple reflows, Ni₃Sn₄ intermetallic compound (IMC) layer formed at the Sn-37Pb solder/ENIG UBM interface. On the other hand, in the case of Sn-3.0Ag-0.5Cu solder, (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ IMCs were formed at the interface. The shear force of the Pb-free Sn-3.0Ag-0.5Cu flip chip solder bump was higher than that of the conventional Sn-37Pb flip chip solder bump.     

Shear and Pull Testing of Sn-3.0Ag-0.5Cu Solder with Ti/Ni(V)/Cu Underbump Metallization During Aging

Ti/Ni(V)/Cu underbump metallization (UBM) is widely used in flip-chip technology today. The advantages of Ti/Ni(V)/Cu UBM are a low reaction rate with solder and the lack of a magnetic effect during sputtering. Sn atoms diffuse into the Ni(V) layer to form a Sn-rich phase, the so-called Sn-patch, during reflow and aging. In this study, the relationship between interfacial reaction and mechanical properties of the solder joints with Ti/Ni(V)/Cu UBM was evaluated. Sn-3.0Ag-0.5Cu solder was reflowed on sputtered Ti/Ni(V)/Cu UBM, and then the reflowed samples were aged at 125°C and 200°C, respectively. (Cu,Ni)₆Sn₅ was formed and grew gradually at the interface of the solder joints during aging at 125°C. The Sn-patch replaced the Ni(V) layer, and (Ni,Cu)₃Sn₄ was thus formed between (Cu,Ni)₆Sn₅ and the Sn-patch at 200°C. The Sn-patch, composed of Ni and V₂Sn₃ after reflow, was transformed to V₂Sn₃ and amorphous Sn during aging. Shear and pull tests were applied to evaluate the solder joints under various heat treatments. The shear force of the solder joints remained at 421 mN, yet the pull force decreased after aging at 125°C. Both the shear and pull forces of the solder joints decreased during aging at 200°C. The effects of aging temperature on the mechanical properties of solder joint were investigated and discussed.     

Interfacial Reaction of Sn and Cu-<Emphasis Type="Italic">x</Emphasis>Zn Substrates After Reflow and Thermal Aging

Zn additions to Cu under bump metallurgy (UBM) in solder joints were the subject of this study. An alternative design was implemented to fabricate pure Sn as the solder and Cu-xZn (x = 15 wt.% and 30 wt.%) as the UBM to form the reaction couple. As the Zn content increased from 15 wt.% to 30 wt.% in the Sn/Cu-Zn system, growth of both Cu₃Sn and Cu₆Sn₅ was suppressed. In addition, no Kirkendall voids were observed at the interface in either Sn/Cu-Zn couple during heat treatment. After 40-day aging, different multilayered phases of [Cu₆Sn₅/Cu₃Sn/Cu(Zn)] and [Cu₆Sn₅/Cu(Zn,Sn)/CuZn] formed at the interface of [Sn/Cu-15Zn] and [Sn/Cu-30Zn] couples, respectively. The growth mechanism of intermetallic compounds (IMCs) during aging is discussed on the basis of the composition variation in the joint assembly with the aid of electron-microscopic characterization and the Sn-Cu-Zn ternary phase diagram. According to these analyses of interfacial morphology and IMC formation in the Sn/Cu-Zn system, Cu-Zn is a potential UBM for retarding Cu pad consumption in solder joints.     

Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects

The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 10³ A/cm². When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) interface compared with the aging case, resulting in the transformation of interfacial intermetallic compound (IMC) from Ni₃Sn₄ into (Cu,Ni)₆Sn₅. However, at the Sn/Cu (cathode) interface, the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.2 wt.% Ni) and Cu₃Sn. When Ni atoms were under downwind diffusion, only a very small quantity of Ni atoms diffused to the opposite Cu/Sn (anode) interface and the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.6 wt.% Ni) and Cu₃Sn. EM significantly accelerated the dissolution of Ni atoms from the Ni-P and the interfacial Ni₃Sn₄ compared with the aging case, resulting in fast growth of Ni₃P and Ni₂SnP, disappearance of interfacial Ni₃Sn₄, and congregation of large (Ni,Cu)₃Sn₄ particles in the Sn solder matrix. The growth kinetics of Ni₃P and Ni₂SnP were significantly accelerated after the interfacial Ni₃Sn₄ IMC completely dissolved into the solder, but still followed the t ^1/2 law.     

Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm² at 150°C, 10 kA/cm² at 160°C, and 15 kA/cm² at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)₆Sn₅ or Cu₆Sn₅ intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.     

Influence of Pd Concentration on the Interfacial Reaction and Mechanical Reliability of the Ni/Sn-Ag-Cu-xPd System

The interfacial reaction between Ni and Sn-3Ag-0.5Cu-xPd alloys (x = 0 wt.% to 1 wt.%) at 250°C and the mechanical reliability of the solder joints were investigated in this study. The reaction and the resulting mechanical properties were both strongly dependent on the Pd concentration. When x was low (≤0.2 wt.%), the reaction product at the Ni/Sn-Ag-Cu-xPd interface was a layer of (Cu,Ni)₆Sn₅. An increase of x to 0.3 wt.% produced one additional (Pd,Ni)Sn₄ compound that was discontinuously scattered above the (Cu,Ni)₆Sn₅. When x was relatively high (0.5 wt.% to 1 wt.%), a dual layer of (Pd,Ni)Sn₄-(Cu,Ni)₆Sn₅ developed with the reaction time. The results of the high-speed ball shear (HSBS) test showed that the mechanical strength of the Ni/Sn-3Ag-0.5Cu-xPd joints degraded with increasing x, especially when x reached a high level of ≥0.3 wt.%. This degradation corresponded to the growth of (Pd,Ni)Sn₄ at the interface, and joints easily failed along the boundaries of solder/(Pd,Ni)Sn₄ and (Pd,Ni)Sn₄/(Cu,Ni)₆Sn₅ in the HSBS test. The (Pd,Ni)Sn₄-induced joint failure (Pd embrittlement) was alleviated by doping the solder with an appropriate amount of Cu. When the Cu concentration increased to 1 wt.% and the Pd concentration did not exceed 0.5 wt.%, the growth of (Pd,Ni)Sn₄ could be thoroughly inhibited, thereby avoiding the occurrence of Pd embrittlement in the solder joints.     

Interfacial Reactions and Microstructures of Sn-0.7Cu-<Emphasis Type="Italic">x</Emphasis>Zn Solders with Ni-P UBM During Thermal Aging

The effects of the addition of Zn to Sn-0.7Cu solders are investigated. The study is focused on the interfacial reactions, microstructures, and mechanical properties after reaction with Ni-P under bump metallurgies (UBMs). The Zn contents in Sn-0.7Cu-xZn are varied as 0.2, 0.4, and 0.8 (in wt.% unless otherwise specified). In the reaction with Ni-P UBM during thermal aging at 150°C for 1000 h, (Cu,Ni)₆Sn₅ intermetallic compounds (IMCs) are formed at the Sn-0.7Cu/UBM interface, whereas Zn is incorporated into IMCs to form (Cu,Ni,Zn)₆Sn₅ in the Zn-doped solders. As the Zn content increases, the interfacial IMC thickness is reduced. A total reduction of about 40% in IMC thickness was observed for the 0.8% Zn-doped Sn-Cu. The same IMC particles are also observed in the matrix of each solder. In Sn-0.7Cu, (Cu,Ni)₆Sn₅ particles are coarsened during aging, while (Cu,Ni,Zn)₆Sn₅ particles in the Zn-added solders are less coarsened and remain much smaller than (Cu,Ni)₆Sn₅. The growth rate of (Cu,Ni)₆Sn₅ during thermal aging is significantly suppressed by the addition of Zn. Consequently, after reaction with Ni-P UBM, the Zn-doped solders exhibit a thermally stable microstructure as measured by hardness and shear strength.