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固体氧化物燃料电池阳极材料的流延制备和电池性能研究 总被引:1,自引:0,他引:1
利用流延法制备NiO-YSZ阳极,采用磁控溅射、多层流延法制备YSZ电解质薄膜,丝网印刷制备BSCF-YSZ阴极,制备出Ni-YSZ/YSZ/BSCF-YSZ单电池。阳极制备中探索了浆料配比对生坯性能的影响;研究了不同造孔剂得到的流延阳极的微结构形貌差异。考察了双层流延、磁控溅射制备YSZ薄膜的微观结构,并测试评价了电池性能。 相似文献
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用流延法制备钇稳定氧化锆(YSZ)多孔体素坯,在流延素坯上丝网印刷沉积10Sc1CeSZ电解质,经共烧结得到多孔YSZ支撑致密10Sc1CeSZ薄膜电解质的约为5cm×5cm较大面积的双层膜。在电解质薄膜上依次印刷阻挡层Ce0.8Gd0.2O2(CGO)和阴极La0.6Sr0.4CoO3(LSC)。向多孔YSZ支撑体内浸渍偏钒酸铵、草酸的混合溶液和硝酸铜溶液多次后经低温煅烧后得到V2O5-CuO-YSZ复合阳极。用SEM对双层薄膜结构浸渍前后进行显微结构表征,结果表明流延法制备的多孔YSZ孔洞连通,丝网印刷制备的电解质层致密,电解质厚度约为7μm;浸渍后,催化剂均匀地分布在YSZ孔隙间。在800℃,分别以湿H2和含5.2×10-3体积分数的H2S湿合成气(40%H2,60%CO)为燃料进行电化学测试,开路电压分别为1.07和1.08V,最大功率密度均为37mW/cm2。电性能测试结果表明,该方法制备的固体氧化物燃料电池复合阳极具有抗硫化氢毒化和抗碳沉积的性能。 相似文献
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为了改善8YSZ陶瓷的力学性能,以8YSZ双粒度粉体为研究对象,对其进行干压成型、无压烧结实验。对成型压力、保压时间及黏结剂用量等成型工艺参数进行了优化;利用正交实验对烧结方案进行了设计,讨论了烧结温度、升温速率、保温时间、烧结方式等烧结工艺参数对8YSZ陶瓷烧结性能和力学性能的影响,并优化出其烧结工艺参数。结果表明:选取PVA加入量10%(质量分数)、成型压力10MPa、保压时间30s的成型工艺参数,可压制出相对密度为54.9%的陶瓷坯体;选取烧结温度1500℃,保温时间4h,升温速率5℃/min,烧结方式裸烧的烧结工艺参数,可制备出相对密度为98.3%,抗弯强度为100.3MPa的8YSZ陶瓷。 相似文献
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采用泥浆喷涂工艺制备SOFC用阳极支撑YSZ电解质薄膜,首先采用模压成型工艺制窷iO-YSZ阳北极基底,通过优化泥浆制备工艺条件及喷涂条件,在NiO-YSZ阳极基底上喷涂均匀平整的YSZ电解质涂层,进一步采用共烧结工艺使YSZ电解质层致密.通过在基底中添加碳粉造孔剂,调节阳极基底的烧结收缩率与电解质层烧结收缩率一致,避免电解质涂层的开裂和变形.阳极基底中加入5wt%含量的碳粉,阳极与电解质层烧结收缩率一致.扫描电子显微镜观察电解质涂层表面形貌表明,球磨24h的泥浆喷涂的YSZ涂层较好,阳极基底与电解质膜在1400℃烧结2h,电解质膜层致密,表明通过泥浆喷涂工艺可以制备出致密电解质层. 相似文献
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改进注浆法制备YSZ电解质薄管的烧结和电性能 总被引:4,自引:0,他引:4
用改进注浆法制备出8mol%钇稳定化氧化锆(YSZ)电解质长薄管,研究了YSZ电解质长薄管的烧结工艺,分析了烧结过程和Al2O3掺入量对其致密性的影响,确定了相应的烧结制度,并对所获得的YSZ电解质薄管的电性能进行了研究。研究结果表明:升温速度对YSZ长薄管的性能有着重要影响,坯体中阿拉伯树胶在600℃时被完全烧尽,1400~1500℃的温度范围是烧结的重要阶段,这期间气孔率显著下降,致密性明显提高。加入适量的Al2O3有助于提高YSZ长薄管的致密性。样品的氧离子电导率随烧结密度的增大而提高。利用改进注浆法和上述烧结工艺在1650℃已烧制出相对密度为96.7%、长度为266mm、厚度为0.4~0.9mm的YSZ电解质长薄管。 相似文献
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热处理温度对磁控溅射法制备YSZ电解质薄膜性能的影响 总被引:1,自引:0,他引:1
采用射频磁控溅射方法在NiO-YSZ阳极基底上制备了致密的YSZ电解质薄膜,主要研究了热处理温度对电解质薄膜性能的影响.试验发现随着热处理温度的提高,所制备的YSZ薄膜中晶粒结合更加致密,气孔率显著降低,薄膜与基底间的结合更加紧密.通过组装单体电池实际考察了薄膜的性能,发现随着热处理温度的提高,电池的开路电压及放电性能均有大幅度的提高.在800℃下,开路电压由0.82V提高到1.023V,已接近SOFC的理论电压;最大功率密度由480mW/cm2提高到760 mW/cm2. 相似文献
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应用电泳沉积法制备固体电解质(8YSZ)薄膜 总被引:5,自引:0,他引:5
应用电泳沉积法制备钇稳定二氧化锆(8YSZ)薄膜,探索了影响电泳沉积层密度、厚度、粘附性和形貌的诸多因素,确定的最佳工艺操作条件是粉末浓度为100g/1。电场强度为30V/cm,沉积时间为30s。轻微搅拌或不搅拌。经重复电泳沉积-烧结,获得厚为26~56μm,硬度为4.33GPa,在1000℃时O2-电导率为12.2S/m和O2-电导激活能为1.09eV/mol的薄膜。 相似文献
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《Materials Science & Technology》2013,29(10):1606-1609
AbstractCo-doped samples of 7YSZ with Yb3+, Ce4+ and Nb5+ having high porosity are subject to Vickers hardness testing. Fracture toughness KIC values are obtained by measuring linear and non-linear crack geometries. Three separate means are used to calculate the fracture toughness and to investigate the associated trends. It is confirmed that high amounts of retained tetragonal zirconia improve fracture toughness, while elevated amounts of monoclinic zirconia lower overall fracture toughness. The experimental trend for increasing KIC is Nb:7YSZ<Yb:7YSZ<7YSZ<Ce:7YSZ; however, this trend is qualitative as the Young’s modulus values for different samples are corrected for porosity using an equation that does not generally apply to indentation techniques. 相似文献
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S. Ramanathan K. P. Krishna Kumar P. K. De S. Banerjee 《Bulletin of Materials Science》2005,28(2):109-114
A precursor for zirconia - 8 mole% yttria (YSZ-ZrO2-8 m% Y2O3) powder was prepared by coprecipitation and the calcination temperature was fixed as 900°C from TG-DTA and XRD studies. The
calcined powder could be dry ground only to a mean particle size (D50) of 6 Μm containing substantial amount of coarse agglomerates in the size range 10–100 Μm. The dispersion conditions for
its wet grinding were evaluated through zeta-potential and viscosity studies. The zeta-potential variation with pH of the
aqueous suspensions of the powder exhibited maximum numerical values at 3 and 11 pH, exhibiting the ideal pHs for dispersion
stability through electrostatic columbic repulsion mechanism. Slurries of dry ground powders with solid concentration in the
range 15–30 vol.% exhibited pseudo-plastic flow characteristics, indicating presence of flocculates. With progress of grinding,
the increase in viscosity of the slurries became less significant with decreasing solid concentration. Even though the particle
size of the ground slurries decreased with decreasing solid content, there was little change in it for slurries with solid
content < 20 vol.%. Grinding conditions for formation of sinter-active powders of YSZ with sub-micron size (D
50 ∼ 0.7 Μm free of agglomerates of size > 5 Μm) were established. Compacts from this powder could be sintered at 1400°C to
translucent bodies with 99% theoretical density. 相似文献
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用无机溶胶-凝胶法制备出纳米晶ZrO2基粉体,比较了10GdSZ,5%Gd-8YSZ,8YSZ三种电解质材料,得出在相同工作温度下GdSZ材料有着较高的电导率和较好的材料物理性能。GdSZ材料在未来的实际生产应用中有着广阔的应用前景。 相似文献
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A. Dutta N. Kaabbuathong M. L. Grilli E. D. I. Bartolomeo E. Traversa 《Bulletin of Materials Science》2002,25(6):451-453
Potentiometric sensors based on yttria stabilized zirconia (YSZ) with WO3 as sensing electrode were fabricated using either Pt or Au electrodes. The sensors were studied in the temperature range
550–700°C in the presence of different concentrations (300-1000 ppm) of NO2 and CO in air. The response to NO2 was very stable with fast response time (20-40 s). The best sensitivity (18.8 mV/decade) using Pt electrodes was observed
at 600°C. At the same temperature a cross-sensitivity (-15 mV/decade) to CO gas was also noticed. The response to CO was decreased
(-4 mV/decade) using Au electrode. The role played by WO3 on the sensing electrode was discussed. 相似文献
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Yttria-stabilized zirconium (YSZ) thin films were grown from the tetragonal phase of ZrO2 stabilized by 8 wt% of Y2O3 (8% of YSZ) ceramic powders using e-beam deposition technique (EB-PVD). The influence of the type of substrate on the microstructure of deposited YSZ thin films was analysed. YSZ thin films (2-3 μm of thickness) were deposited on three different types of substrates: optical quartz (SiO2), porous Ni-YSZ substrates and Alloy 600 (Fe-Ni-Cr). The dependence of the substrate temperature (from 20 to 600 °C) on the thin film structure and the surface morphology were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that (i) the substrate temperature has an influence on the crystallite size, which varied between 12 and 50 nm, (ii) the substrate type has an influence on the growth mechanism of YSZ thin films, and (iii) a bias voltage applied to the substrate during the deposition of thin films has an influence on the densification of YSZ layers. 相似文献