苎麻/棉混纺纱的生产实践

根据苎麻纤维的性能,确定了苎麻/棉混纺纱的配混方法及生产工艺,解决了利用棉纺设备加工苎麻/棉混纺纱生产中遇到的纤维整齐度差、易缠绕、牵伸不开等技术难题.     

苎麻/棉混纺纱的生产实践

根据苎麻纤维的性能,确定了苎麻/棉混纺纱的配混方法及生产工艺,解决了利用棉纺设备加工苎麻/棉混纺纱生产中遇到的纤维整齐度差、易缠绕、牵伸不开等技术难题.     

毛棉混纺纱生产工艺探讨

针对棉纺设备上加工毛棉混纺纱的难度 ,对毛棉生产工艺在生产过程中存在的问题进行了分析讨论 ,并提出了相应的改进办法 ,为成功生产毛棉混纺纱提供了参考意见     

短羊毛在棉纺设备上的加工工艺技术已实现有偿技术转让

纺织系毛纺教研室和棉纺试验厂合作,共同进行了短羊毛在传统棉纺设备上纺纱的探讨和研究。经过近一年的努力,终于纺出了42_s 毛涤混纺纱(毛/涤40/60),其纱线及半制品质量均已达到一定的水平。短羊毛在棉纺设备上纺纱是利用棉纺设备加工40～60毫米长度的短羊毛。这种长度     

木棉与粘胶混纺纱工艺研究

研究木棉纤维在环锭纺纱系统上的纺纱性能．根据木棉纤维的吸水和亲油性,以及松散易开松等特性,将和毛工序运用到棉纺系统中,取代开清棉工序．加入和毛油,提高了木棉的韧性和抱合力,减小了飞花,在数字化纺纱小样机上纺出木棉与粘胶30：70,40：60的混纺纱．结果表明,和毛油对提高木棉的可纺性有一定的作用．     

Modal/棉混纺比与纱线性能关系的研究

混纺纱中Modal／棉纤维的混纺比依次为：20／80、30／70、35／65、40／60、47／53、50／50、60／40和80／20八种规格．研究了混纺纱的强度与混纺比的关系,Modal／棉混纺纱的强度随着Modal纤维混纺比的增加先下降,而后再增加,曲线存在下凹点,Modal／棉混纺纱的临界混纺比为51／49．在实际生产中,要注意避开出现条干恶化和毛羽恶化的混纺比．综合条干、强度、毛羽几个方面,Modal／棉混纺纱较合适的混纺比在60／40左右,最不宜采用的混纺比为50／50．     

利用中长化纤棉纺设备纺涤/粘/麻混纺纱的生产工艺

涤 /粘 /麻混纺纱 ,是一种高档的装饰用布及服用面料用纱。利用中长化纤棉纺设备 ,通过采取适宜的技术措施和工艺 ,纺涤 /粘 /麻混纺纱是可行的。纺纱时 ,精梳落麻原料混合前要经加湿加除味剂处理 ,稳定回潮后再使用。提高麻纤维长度整齐度 ,尽量减少超、倍长纤维 ,采取“多松、多打、多梳、多落、低速”及“紧隔距、重加压”的工艺 ,能提高纱线的质量     

Modal／棉混纺比与纱线性能关系的研究

混纺纱中Modal／棉纤维的混纺比依次为：20／80、30／70、35／65、40／60、47／53、50／50、60／40和80／20八种规格．研究了混纺纱的强度与混纺比的关系,Modal／棉混纺纱的强度随着Modal纤维混纺比的增加先下降,而后再增加,曲线存在下凹点,Modal／棉混纺纱的临界混纺比为51／49．在实际生产中,要注意避开出现条干恶化和毛羽恶化的混纺比．综合条干、强度、毛羽几个方面,Modal／棉混纺纱较合适的混纺比在60／40左右,最不宜采用的混纺比为50／50．     

利用中长化纤棉纺设备纺涤／粘／麻混纺纱的生产工艺

涤/粘/麻混纺纱，是一种高档的装饰用布及服用面料用纱，利用中长化纤棉纺设备，通过采取适宜的技术措施和工艺，纺涤/粘/麻混纺纱是可行的，纺纱时，精梳落麻原料混合前要经加湿加除除味剂处理，稳定回潮后再使用，提高麻纤维长度整齐度，尽量减少超，倍长纤维，采取“多松、多打，多梳，多落，低速”及“紧隔距，重加压”的工艺，能提高纱线的质量。     

短羊毛在棉纺设备上加工的研究

本文研究传统棉纺设备经改进后,加工短羊毛与涤纶混纺纱的工艺过程,介绍了机器的改进及加工工艺措施。     

浅析英语语音教学中的/n//l/发音错误

在大学英语教学过程中,有关/n/与/l/的发音错误很常见,原因是没有完全掌握它们的发音规则。/n//l/发音规则的相似性造成了/n//l/不分的情况,而且局部方言中这两个音也不作区分,使得/n//l/混淆的情况更加严重。在教学过程中,可以通过重点讲解区分/n/与/l/的发音规则及其区别来避免/n//l/发音错误。本文同时也分析了含糊/l/音的发音错误,通过对/n/与/l/相关的发音错误分析找出大学英语语音教学行之有效的途径:在完全把握单音的发音规则的基础上,进一步强调语调的掌握,使学生拥有良好的语音。     

肼类燃料液滴的亚临界——超临界蒸发/分解燃烧理论

对肼、一甲基肼、偏二甲肼的亚临界－－超临界蒸发／分解燃烧进行了研究,计算了肼类燃料滴在不同压力下液滴温度和蒸发速度的变化历程,计算了蒸发常数、传热数和传质数,其结果和实验数据是吻合的。本文不但考虑了肼类燃料滴的亚临界蒸发／分解燃烧,还考虑到了其超临界蒸发／分解燃烧,并对达到超临界工况时的界限参数进行了计算。     

Reliability of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I-V characteristics, capacitance retention, fatigue and imprint) were investigated. The I-V curve showed the conventional Schottky diode characteristics with a small current density of - 5.3×10 -10 A/cm2 at a voltage of - 4 V and 6.7×10-8 A/cm2 at a voltage of + 4V, and this characteristic can be maintained below 50℃. The capacitance variety of the ferroelectric diode was only 5 % in 10 hours after withdrawing the applied bias of + 5 V or - 5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was obse     

铬/氢/空气/氯体系的焚烧动力学分析

对含铬固体废物焚烧体系进行动力学分析是提出控制六价铬化合物排放措施的基础。本文对铬/氢/空气/氯焚烧体系进行了动力学分析,研究了温度、初始氯含量对产物中六价铬化合物含量的影响。研究表明,六价铬化合物主要以CrO2(OH)2的形式出现,最高含量出现在1700K左右;氯的存在没有导致六价铬化合物CrO2Cl2的大量生成;六价铬化合物CrO2(OH)2的含量随初始氯含量的增大略有下降。建议含铬固体废物实际焚烧过程中,避开1700K左右的温度区域,减少六价铬化合物的排放。     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯（St）、丙烯酸丁酯（BA）、甲基丙烯酸 （MAA）、丙烯酸（AA）、醋酸乙烯酯 （VAc）的复合乳液.分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响.通过正交试验确定组分的适当配比.该共聚乳液的粘度及固体含量符合要求,稳定性好, 性能价格比高.应用表明：用此乳液配制成地毯乳胶,胶膜具有良好的机械性能.     

Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. Supported by the National Engineering and Scientific Commission of Pakistan     

减小ITO/PTCDA/P-Si/Al型光电探测器暗电流的方法

有机/无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景.将有机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机/无机同型异质结,然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级.对降低暗电流的工艺措施和方法进行了分析和讨论.实验结果还表明,ITO/PTCDA/P-Si/Al同型异质结的暗电流主要成分是耗尽区中载流子的产生-复合电流结的反向饱和电流.     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯(St)、丙烯酸丁酯(BA)、甲基丙烯酸(MAA)、丙烯酸(AA)、醋酸乙烯酯(VAc)的复合乳液。分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响。通过正交试验确定组分的适当配比。该共聚乳液的粘度及固体含量符合要求,稳定性好,性能价格比高。应用表明:用此乳液配制成地毯乳胶,胶膜具有良好的机械性能。     

Modification of LiCo1/3Ni1/3Mn1/3O2 cathode material by CeO2-coating

LiCo_1/3Ni_1/3Mn_1/3O₂ was coated by a layer of 1.0 wt% CeO₂ via sol-gel method. The bared and coated LiMn_1/3Co_1/3Ni_1/3O₂ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), cyclic voltammogram (CV) and galvanotactic charge-discharge test. The results show that the coating layer has no effect on the crystal structure, only coating on the surface; the 1.0 wt% CeO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ exhibits better discharge capacity and cycling performance than the bared LiCo_1/3Ni_1/3Mn_1/3O₂. The discharge capacity of 1.0 wt% CeO₂-coated cathode is 182.5 mAh·g⁻¹ at a current density of 20 mA·g⁻¹, in contrast to 165.8 mAh·g⁻¹of the bared sample. The discharge capacity retention of 1.0 wt% CeO₂-coated sample after 12 cycles reaches 93.2%, in comparison with 86.6% of the bared sample. CV results show that the CeO₂ coating could suppress phase transitions and prevent the surface of cathode material from direct contact with the electrolyte, thus enhance the electrochemical performance of the coated material.     

Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic "1" and logic "0" at a read voltage of + 2V, and the stored logical value ("1" or "0") could be read out in 30 min.