p-GaN表面制备低阻欧姆接触电极的几个关键问题

优良的光电特性使得GaN材料成为当今半导体器件研究领域的热点,但高功函数和低载流子浓度使p-GaN表面难以制备低阻欧姆接触电极、严重妨害了GaN基器件的热稳定性和输出功率.如何制备具有低阻欧姆接触特性的p-GaN电极已成为一个关键的科学和技术问题.探讨了影响p-GaN欧姆接触特性的几个关键因素,如表面预处理工艺、电极材料的选择和厚度、退火工艺等,对此方面的最新进展进行评述和归纳,并提出自己的创新性研究思路.     

N-polar GaN上的欧姆接触:材料制备、金属化方案与机理

氮极性(N-polar)GaN与镓极性(Ga-polar)GaN极性相反,且具有较高的表面化学活性,使其在光电子、微电子及传感器等领域逐渐受到关注。文章结合一些相关研究报道,综述了N-polar GaN上欧姆接触的研究进展。首先对N-polar GaN材料的制备进行了分析,随后对N-polar GaN的欧姆接触电极的金属化方案及欧姆接触机理等内容进行了综合讨论,以期为实际N-polar GaN欧姆接触研究提供一些参考。     

p型GaN上透明电极的研究现状

GaN基发光器件通常采用金属作为p型GaN的接触电极,但由于金属透光率低,大大降低了器件的发光效率,解决办法之一就是采用透明导电薄膜作为其接触材料.本文在分析p-GaN上难以形成欧姆接触原因的基础上,提出了获得良好电极性能的途径,并从电极的制备方法、光电特性等方面讨论了近年来透明导电薄膜作为p-GaN接触的研究进展,并对未来的发展方向进行了简要说明.     

AuGeNi—n型GaAs欧姆接触界面微区结构与接触电阻率的关系

欧姆接触是砷化镓器件中的基本单元，它的电性能极大地影响器件的质量。在众多的欧姆接触系统中，ＡｕＧｅＮｉ系统应用最为广泛。利用扫描俄歇电子微探针对离子注入重掺杂的ｎ型ＧａＡｓ上利用快速热合金制备的ＡｕＧｅＮｉ欧姆接触进行了研究，比较了不同退火温度下欧姆接触的电性能和微区界面结构，对界面微区结构与接触电阻的关系进行了探讨，提出了产生低阻接触的理想微区结构，为工艺参数的选择提供了有益的依据。     

Ti/Al/Ni/Au在N-polar GaN上的欧姆接触

N-polar GaN以其特有的材料特性和化学活性日益受到研究者关注,而N-polar GaN上欧姆接触也成为研究的热点。以Ti/Al/Ni/Au作为欧姆接触金属,分析了N-polar GaN上欧姆接触的最优退火条件,并借助剖面透射电子显微镜(TEM)和能量色散X射线能谱仪(EDX)研究了金属和N-polar GaN之间的反应生成物。结果表明,当退火温度升高到860℃时,可得到比接触电阻率ρc为1.7×10~(-5)Ω·cm~2的最优欧姆接触特性。TEM和EDX测试发现,除了生成已报道的AlN,还会在界面处产生多晶AlO_x,两者共同作用会进一步拉高势垒,从而对N-polar GaN上欧姆接触产生不利影响。     

两步镀膜Ti/Al/Ti/Au的n型GaN欧姆接触研究

报道了一种可靠稳定且低接触电阻的n型GaN欧姆接触。首先在掺硅的n型GaN(3×1018cm-3)蒸镀Ti(30nm)/Al(500nm),然后在氮气环境530℃合金化3min,最后蒸镀Ti(100nm)/Au(1000nm)用于保护Al层不被氧化。该接触电极有良好的欧姆接触特性,比接触电阻率为8.8×10-5Ωcm2,表面平坦、稳定、易焊线,可应用于制作高性能的GaN器件.     

Si基n型GaN的欧姆接触研究

GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本文对Si基n型GaN上的Al单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I U特性曲线 ,X射线衍射以及二次离子质谱分析 ,揭示了界面固相反应对欧姆接触的影响 ,提出了改善这两种电极欧姆接触的二次退火方法     

A~ⅢB~Ⅴ化合物半导体欧姆接触的研究进展

本文全面、系统地评述了A~ⅢB~Ⅴ化合物半导体材料上欧姆接触的研究现状和发展方向。首先考虑金属／半导体接触物理，从理论上阐明了欧姆接触的机理，以及对其表征和测试。其次，文章用大量篇幅，总结了利用不同方法（如重掺技术、金属化和能带工程等）实现各种A~ⅢB~Ⅴ半导体材料上欧姆接触的工艺过程、实验研究和重要结论，其中以GaAs最为详细。结合器件的发展和实际工艺的要求，文章还分析了各种制备方法的优缺点，并指出这方面研究工作目前存在的、急需解决的一些问题。     

Si基n型GaN的欧姆接触研究

GaN材料在光电子器件领域的广泛应用前景使得金属与其欧姆接触的研究成为必然。本对Si基n型GaN上的A1单层及Ti/Al双层电极进行了研究。通过对不同退火条件下的I—U特性曲线，X射线衍射以及二次离子质谱分析，揭示了界面固相反应对欧姆接触的影响，提出了改善这两种电极欧姆接触的二次退火方法。     

ZnO上欧姆接触的研究进展

为制备高性能的ZnO基器件如UV光发射器，探测器、场效应晶体管，在ZnO上形成优良的金属电极是十分必要的。回顾了近年来ZnO上制备欧姆接触的新进展，对在n型ZnO上制备欧姆接触的Al，A1/Pt，A1/Au，Ti/Al，Ti，AU，Ti/A1/Pt/Au，Re/Ti/Au等金属化方案的性能与特点，以及影响欧姆接触电阻率和热稳定性的因素，如表面处理和退火等进行了分析与归纳。同时，对P型ZnO上难以获得低接触电阻的原因进行了讨论。文章还简要说明了ZnO上透明欧姆接触的研究现状，指出获得低阻、高导电、高透光和高热稳定性的接触是未来ZnO基光电器件的发展方向。     

Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts

New device concepts can increase the functionality of scaled electronic devices, with reconfigurable diodes allowing the design of more compact logic gates being one of the examples. In recent years, there has been significant interest in creating reconfigurable diodes based on ultrathin transition metal dichalcogenide crystals due to their unique combination of gate‐tunable charge carriers, high mobility, and sizeable band gap. Thanks to their large surface areas, these devices are constructed under planar geometry and the device characteristics are controlled by electrostatic gating through rather complex two independent local gates or ionic‐liquid gating. In this work, similar reconfigurable diode action is demonstrated in a WSe₂ transistor by only utilizing van der Waals bonded graphene and Co/h‐BN contacts. Toward this, first the charge injection efficiencies into WSe₂ by graphene and Co/h‐BN contacts are characterized. While Co/h‐BN contact results in nearly Schottky‐barrier‐free charge injection, graphene/WSe₂ interface has an average barrier height of ≈80 meV. By taking the advantage of the electrostatic transparency of graphene and the different work‐function values of graphene and Co/h‐BN, vertical devices are constructed where different gate‐tunable diode actions are demonstrated. This architecture reveals the opportunities for exploring new device concepts.     

激光刻图在制造 a-Si 光伏器件中的应用

描述了在集成型 a-Si 光伏器件的制造中,利用高功率激光束进行刻图的新方法。作为激光刻图中材料除去的模型,被刻蚀材料的蒸汽压对材料除去会带来很大的影响。在制备 a-Si 光伏器件中,侧边接触的器件结构对激光刻图技术是很合适的。激光的平均功率或激励电流,重复频率、焦距和扫描速度是激光刻图技术的基本参数。我们列出了刻蚀 TCO、a-Si 和背电极薄膜的一些刻蚀条件,可以发现要刻蚀不同的薄膜,需控制这些条件以达到最佳化。     

碳纳米管/金属接触改善方法的研究进展

碳纳米管(CNT)由于其独特结构和优异特性已被广泛用来构筑各种纳米器件. 而CNT与电极间的接触在CNT器件中扮演着重要的作用, 是器件性能的关键影响因素. 采用何种有效的方法来改善CNT与金属电极间的接触一直是CNT器件研究中的一个重要方面. 本文综述了近年来CNT/金属接触改善方法的研究进展, 结合本课题组的研究对目前有代表性的接触改善方法进行介绍. 阐述了各种改善方法的原理和加工工艺, 讨论了采用这些方法获得的接触特性和器件性能, 并对各方法的特点进行了比较.     

Moisture-Enabled Electricity Generation: From Physics and Materials to Self-Powered Applications

The exploration of the utilization of sustainable, green energy represents one way in which it is possible to ameliorate the growing threat of the global environmental issues and the crisis in energy. Moisture, which is ubiquitous on Earth, contains a vast reservoir of low-grade energy in the form of gaseous water molecules and water droplets. It has now been found that a number of functionalized materials can generate electricity directly from their interaction with moisture. This suggests that electrical energy can be harvested from atmospheric moisture and enables the creation of a new range of self-powered devices. Herein, the basic mechanisms of moisture-induced electricity generation are discussed, the recent advances in materials (including carbon nanoparticles, graphene materials, metal oxide nanomaterials, biofibers, and polymers) for harvesting electrical energy from moisture are summarized, and some strategies for improving energy conversion efficiency and output power in these devices are provided. The potential applications of moisture electrical generators in self-powered electronics, healthcare, security, information storage, artificial intelligence, and Internet-of-things are also discussed. Some remaining challenges are also considered, together with a number of suggestions for potential new developments of this emerging technology.     

Electrospinning Triboelectric Laminates: A Pathway for Scaling Energy Harvesters

Herein, a new paradigm of triboelectric polymers—the triboelectric laminate—a volumetric material with electromechanical response comparable to the benchmark soft piezoelectric material polyvinylidene difluoride is reported. The electromechanical response in the triboelectric laminate arises from aligned dipoles, generated from the orientation of contact electrification in the laminates bulk volume. The dipoles form between sequential bilayers consisting of two different electrospun polymer fibers of different diameter. The loose interface between the fiber bilayers ensures friction and triboelectric charging between two polymers. The electric output from the electrospun triboelectric laminate increases with increasing density of the bilayers. This system design has clear benefits over other flexible devices for mechanical energy harvesting as it does not require any poling procedures, and the electromechanical response is stable over 24 h of continuous operation. Moreover, the electromechanically responsive electrospun laminate can be made from all types of polymers, thus providing ample room for further improvements or functionalities such as stretchability, biodegradability, or biocompatibility. The concept of a triboelectric laminate can be introduced into existing triboelectric nanogenerator form factors, to dramatically increase charge harvesting of a variety of devices.     

方钴矿热电材料/Ti88Al12界面稳定性研究

热电器件的界面稳定性是决定其服役可靠性和寿命的关键因素。对于方钴矿热电器件, 为了抑制高温电极与方钴矿材料之间的相互扩散, 需要在两者之间加入阻挡层。本工作选用Ti₈₈Al₁₂作为阻挡层, 利用一步法热压烧结制备n型Yb_0.3Co₄Sb₁₂/Ti₈₈Al₁₂/Yb_0.3Co₄Sb₁₂和p型CeFe_3.85Mn_0.15Sb₁₂/Ti₈₈Al₁₂/CeFe_3.85Mn_0.15Sb₁₂样品, 研究Ti₈₈Al₁₂阻挡层与热电材料间的界面接触电阻率及微结构在加速老化实验中的演化规律。结果表明: 在相同的老化条件下, n型样品的界面接触电阻率增加速度比p型样品慢, 其激活能分别为84.1 kJ/mol和68.8 kJ/mol。对于n型样品, 由元素扩散反应生成的金属间化合物中间层的增长及最终AlCo/TiCoSb层的开裂是导致界面接触电阻率增加的主要原因; 而p型热电材料与Ti₈₈Al₁₂的热膨胀系数的差异加速了p型样品中界面裂纹的产生。     

Fabrication and performance of GaN electronic devices

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for applications in high power electronics capable of operation at elevated temperatures. Although the growth and processing technology for SiC, the other viable wide bandgap semiconductor material, is more mature, the AlGaInN system offers numerous advantages. These include wider bandgaps, good transport properties, the availability of heterostructures (particularly AlGaN/GaN), the experience base gained by the commercialization of GaN-based laser and light-emitting diodes and the existence of a high growth rate epitaxial method (hydride vapor phase epitaxy) for producing very thick layers or even quasi-substrates. These attributes have led to rapid progress in the realization of a broad range of GaN electronic devices, including heterostructure field effect transistors (HFETs), Schottky and p–i–n rectifiers, heterojunction bipolar transistors (HBTs), bipolar junction transistors (BJTs) and metal-oxide semiconductor field effect transistors (MOSFETs). This review focuses on the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures. We also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.     

Multifunctional Polymer-Regulated SnO2 Nanocrystals Enhance Interface Contact for Efficient and Stable Planar Perovskite Solar Cells

Perovskite solar cells (PSCs) have rapidly developed and achieved power conversion efficiencies of over 20% with diverse technical routes. Particularly, planar-structured PSCs can be fabricated with low-temperature (≤150 °C) solution-based processes, which is energy efficient and compatible with flexible substrates. Here, the efficiency and stability of planar PSCs are enhanced by improving the interface contact between the SnO₂ electron-transport layer (ETL) and the perovskite layer. A biological polymer (heparin potassium, HP) is introduced to regulate the arrangement of SnO₂ nanocrystals, and induce vertically aligned crystal growth of perovskites on top. Correspondingly, SnO₂–HP-based devices can demonstrate an average efficiency of 23.03% on rigid substrates with enhanced open-circuit voltage (V_OC) of 1.162 V and high reproducibility. Attributed to the strengthened interface binding, the devices obtain high operational stability, retaining 97% of their initial performance (power conversion efficiency, PCE > 22%) after 1000 h operation at their maximum power point under 1 sun illumination. Besides, the HP-modified SnO₂ ETL exhibits promising potential for application in flexible and large-area devices.