Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Characterisation of SiOxCyHz thin films deposited by low-temperature PECVD

SiO_xC_yH_z thin films were deposited from hexamethyldisiloxane (HMDSO)/O₂ mixtures in a parallel plate, capacitively coupled, RF plasma reactor. Polyethylene terephthalate (PET), Si(1 0 0) wafers and KBr tablets were chosen as substrates. Effect of HMDSO/O₂ ratio, total treatment pressure and power input on the properties of the deposited films were investigated. The structure and bondings were studied by means of Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. Wettability characteristics of the deposited thin films were investigated by means of water droplet contact angle measurements. Surface morphology was investigated with atomic force microscopy. Barrier properties of the SiO_xC_yH_z thin films were investigated by measuring the water vapour transmission rate of the coated PET substrates. Correlations between the characteristics of the deposited film and their barrier properties were discussed.     

Crystal, electronic and luminescence properties of Eu-doped Sr2Al2−xSi1+xO7−xNx

The crystal and electronic structures, as well as the luminescence properties of Sr₂Al_2−xSi_1+xO_7−xN_x:Eu²⁺ are reported. First-principles calculations energetically confirm that the Al and Si atoms are in partial ordering in the 2a and 4e sites in Sr₂Al₂SiO₇. In addition, the band structure calculation shows that Sr₂Al₂SiO₇ has an indirect band gap with an energy gap of about 4.07 eV, which is in good agreement with the experimental data (5.3 eV) obtained from the diffuse reflection spectrum. The crystal structure of Sr₂Al₂SiO₇ can be modified by Si–N substitution for Al–O in the lattice with a maximum solubility of about x=0.6. The average bond length of Eu_Sr^-(O,N) slightly increases although the lattice parameters decrease with the incorporation of Si–N in Sr₂Al₂SiO₇:Eu²⁺. Under excitation in the visible spectral region, Sr₂Al_2−xSi_1+xO_7−xN_x:Eu²⁺ emits blue to yellow light with a broad emission band in the range of 480–570 nm, varying with both the Eu concentration and the x value. The red shift of the emission band of Eu²⁺ is associated with an increase in the crystal-field splitting and the covalency, which arise from the incorporation of nitrogen as well as the energy transfer between the Eu ions at high Eu concentrations. Moreover, the Eu ions have a strong effect on both the concentration quenching and the thermal quenching in Sr₂Al_2−xSi_1+xO_7−xN_x. The temperature dependence of photoluminescence indicates that Sr₂Al_2−xSi_1+xO_7−xN_x:Eu²⁺ shows strong thermal quenching due to the dominant nonradiative process at room temperature.     

Surface energy modification of SiOxCyHz film using PECVD by controlling the plasma processes for OMCTS (Si4O4C8H24) precursor

SiO_x films produced from octamethylycyclodisiloxane (Si₄O₄C₈H₂₄, OMCTS) with oxygen carrier gas have a low contact angle. The surface energy of the SiO_x films can be changed by controlling the plasma process. SiO_xC_yH_z films were deposited on polycarbonate substrates by plasma enhanced chemical vapor deposition using OMCTS without oxygen carrier gas. The input power in the radio frequency plasma was changed to optimize the surface energy of the resulting SiO_xC_yH_z film. The plasma diagnostics, surface energy and surface morphology were characterized by optical emission spectrometry, contact angle measurements and atomic force microscopy, respectively. The chemical properties of the coatings were examined by Fourier transform infrared spectroscopy. The surface energy of the SiO_xC_yH_z films produced using a room temperature plasma process could be controlled by employing the appropriate intensity of excited neutrals, ionized atoms, molecules and energy (input rf power and bias), as well as the suitable dissociation of OMCTS.     

Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

SiO_xN_y thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-PECVD) using hexamethyldisilazane (HMDS, 99.9%)/NH₃/O₂/Ar at a low temperature, and examined for use as a water vapor diffusion barrier. The film characteristics were investigated as a function of the O₂:NH₃ ratio. An increase in the O₂:NH₃ ratio decreased the level of impurities such as -CH_x, N-H in the film through a reaction with oxygen. Thereby, a more transparent and harder film was obtained. In addition, an increase in the O₂:NH₃ ratio decreased the nitrogen content in the film resulting in a more SiO₂-like SiO_xN_y film. Using SiO_xN_y fabricated with an O₂:NH₃ ratio of 1:1, a multilayer thin film consisting of multiple layers of SiO_xN_y/parylene layers was formed on a polyethersulfone (PES, 200 μm) substrate, and its water vapor transmittance rate (WVTR) was investigated. A WVTR < 0.005 g/(m² day) applicable to organic thin film transistors or organic light emitting diodes was obtained using a multilayer composed of SiO_xN_y (260 nm)/parylene (< 1.2 μm) on the PES.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Magnetron sputtering of TiOxNy films

This article reports on the characterization and preparation of N-doped titanium dioxide (TiO₂) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O₂/N₂ atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiO_xN_y films. The amount of N in the TiO_xN_y film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle α_ir after the film activation by UV irradiation was investigated as a function of at% of N in the TiO_xN_y film. The yellow-coloured TiO_xN_y films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap E_g down to 2.7 eV. A significant decrease of the water contact angle α_ir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO₂ films containing less than 6 at% of N.     

Characterization of the chemical bath deposited In(OH)xSy films: Effect of the growth conditions

The In(OH)_xS_y thin films were deposited by chemical bath deposition (CBD) using three different deposition procedures: ‘hot’: starting the deposition at 70 °C, ‘cold’: starting the deposition at room temperature and pre-treatment with In³⁺ ions prior the ‘hot’ deposition. The analysis of the deposited In(OH)_xS_y layers on glass revealed that modifications in the chemical bath deposition procedure provoked significant changes in the nucleation process, the growth rate, the layer elemental composition and the layer morphology. With an additional In³⁺ pre-treatment or starting from a cold solution, the formation of a dense bottom layer has been observed, resulting in In(OH)_xS_y films with more compact structure with refractive index values of 2.6. The comparison of the measured In/S ratio with a thicker layer suggests, that the In(OH)_xS_y deposition starts with an OH-rich layer. Assuming the indirect allowed band gap transition type, an E_g of 2.2 eV was found independent of the procedure type or deposition time.     

Stability,thermal and mechanical properties of PtxAly compounds

The stability, thermal and mechanical properties of Pt_xAl_y intermetallic compounds are investigated by density functional theory (DFT). The cohesive energy and formation enthalpy of Pt_xAl_y phases show that they are thermodynamically stable structures and these are in good agreement with the experiments. The heat capacity of the compounds is calculated by quasi-harmonic approximation (QHA) method. The thermal expansion coefficient as a function of temperature for each compound is also discussed. The elastic properties such as bulk modulus, Young’s modulus are evaluated by Viogt–Reuss–Hill approximation. The anisotropic properties of sound velocities for the Pt_xAl_y compounds are explored. The calculated Poisson’s ratio varies from 0.26 to 0.39 for Pt_xAl_y phases and the bonds in the compounds are mainly metallic and covalent types.     

Synthesis and luminescent properties of novel Ba2−xEuxZr2−yHfySi3O12 phosphor

A series of Eu²⁺ activated luminescent materials according to the composition of Ba_2−xEu_xZr_2−yHf_ySi₃O₁₂ were synthesized using a high temperature solid-state reaction method starting from metal oxides and carbonates. Single phase powders were obtained using two annealing steps and boric acid as a flux. Firstly, starting materials were sintered at 1450 °C for 5 h under CO atmosphere and subsequently annealed at 1200 °C for 5 h under N₂/H₂ (95%/5%) gas flow. All samples were characterized by powder X-ray diffraction (XRD) analysis, thermal quenching (TQ), fluorescence lifetime measurements and photoluminescence (PL) techniques. Moreover, emission colour points, luminous efficacies and quantum efficiencies (QE) were calculated and discussed as a function of Eu²⁺ concentration and Zr/Hf ratio of the host lattice.     

Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Al₂O₃ thin films were deposited on hydrogen-terminated Si substrate using atomic layer deposition (ALD) technique with tri-methylaluminum (TMA) and an oxidant source of H₂O vapor, O₂ plasma, or O₃. Substrate temperature was maintained at 350 °C when the Al₂O₃ films were grown with the oxidant sources of H₂O vapor and O₃, and with the oxidant source of O₂ plasma, Al₂O₃ films were deposited at the substrate temperature of 200 °C. Growth rates of Al₂O₃ films on HF-cleaned Si surface were saturated at 0.08, 0.14, and 0.06 nm/cycle for H₂O vapor, O₂ plasma, and O₃, respectively. Equivalent oxide thickness (EOT) and leakage current vs. physical thickness of atomic layer deposited Al₂O₃ films grown with various oxidant sources were also measured in this study. To investigate the main cause of different EOT with oxidant sources, interfacial properties were examined by using transmission electron microscopy (TEM) and X-ray photoelectron microscopy (XPS). In the TEM analysis, interfacial layers with the thickness of about 1.7 and 1.3 nm were observed in as-deposited Al₂O₃ films grown using O₂ plasma and O₃. We confirmed that the interfacial layers were mainly composed of SiO_x in the XPS depth analysis. Using angle resolved X-ray photoelectron spectroscopy, effect of annealing on the interfacial structure of Al₂O₃ films grown with O₃ and O₂ plasma was also studied, and we found that after annealing, the peak corresponding to silicon suboxide and Al-silicate disappeared and fully oxidized Si⁴⁺ increased.     

Growth by liquid phase epitaxy and evaluation of submicron InxGa1−xAsyP1−y layers for microwave field effect transistors

The growth of In-Ga-As-P layers 0.2 μm thick that are lattice matched to (100)-oriented InP substrates is described. A step cooling technique was employed to obtain uniform In_xGa_1?xAs_yP_1?y layers with band gaps of 0.9, 1.04, 1.15 and 1.2eV. Excellent surface morphology and good (±15%) thickness uniformity were achieved primarily by preventing substrate degradation by means of loss of phosphorus or by removing the degraded surface during the saturation of the melt. Van der Pauw and capacitance-voltage measurements were employed to characterize the epitaxial films. The field effect transistors fabricated from 1.15 and 1.2eV material exhibited a maximum available gain of about 7 dB at 10 GHz.     

TixSiyN nanocomposites by cathodic arc plasma deposition

We have deposited Ti_xSi_yN nanocomposites by means of a custom-made cathodic arc evaporation system, using a TiSi 80/20 at% compound target in a reactive Ar-N₂ atmosphere. We have studied the influence of different process parameters, like the amount of nitrogen in the gas, the total pressure, the arc current or the deposition temperature, on the properties of the material. We have analysed the films by X-ray diffraction (XRD), which has allowed us to determine the optimum conditions to obtain TiN nanocrystals with a good degree of texture. We have found that a moderate increase in the deposition temperature leads to an improvement in the crystalline quality of the films; however, the results as to their hardness are not as good as we expected. We have not been able to confirm the existence of Si₃N₄ by Fourier-transform infrared (FT-IR) spectrometry measurements. Additionally, glow-discharge optical emission spectroscopy (GD-OES) analyses show a high amount of oxygen incorporated to the films (around 5.5 at%).     

Optical characterization of vacuum evaporated a-Se80Te20−xCux thin films

Thin films of a-Se₈₀Te_20−xCu_x (where x=2, 6, 8 and 10) were deposited on glass substrates by vacuum evaporation technique. The absorbance, reflectance and transmittance of as-deposited thin films were measured in the wavelength region 400-1000 nm. The optical band gap and optical constants of amorphous thin films have been studied as a function of photon energy. The optical band gap increases on incorporation of copper in Se₈₀Te_20−xCu_x system. The value of refractive index (n) decreases while the value of the extinction coefficient (k) increases with increasing photon energy. The results are interpreted in terms of concentration of localized states.     

Crystal growth and scintillation properties of (NaxCa1−2xLux−yNdy)F2 single crystals

Na_xCa_1−2xLu_x−yNd_yF₂ single crystals were grown from the melt using the precise atmosphere control type Micro-Pulling-Down (μ-PD) method to investigate their potential as a vacuum-ultraviolet (VUV) scintillators. The grown crystals were single-phase materials with fluorite-type structure (Fm-3m, Z = 4) as confirmed by XRD. The crystals demonstrated 80-90% transmittance above 200 nm wavelength and Nd³⁺ 5d-4f luminescence (when exited by X-ray) observed around 185 nm. The radioluminescence measurements under 5.5 MeV α-ray excitation (²⁴¹Am) demonstrated the light yield of 48 [Ph/5.5 MeV-α] and the decay time of 6.4-7.7 ns.     

ArF-line high transmittance attenuated phase shift mask blanks using amorphous Al2O3-ZrO2-SiO2 composite thin films for the 65-, 45- and 32-nm technology nodes

Amorphous (ZrO₂)_x-(SiO₂)_1−x and (Al₂O₃)_x-(ZrO₂)_y-(SiO₂)_1−x−y composite films were prepared using r.f. unbalanced magnetron sputtering in an atmosphere of argon and oxygen at room temperature. The (ZrO₂)_x-(SiO₂)_1−x and (Al₂O₃)_x-(ZrO₂)_y-(SiO₂)_1−x−y composite films were completely oxidized when an O₂/Ar flow rate ratio of 2.0 was used. The optical constants of these thin films depend linearly on the mole fraction of corresponding films. By tuning the (x, y) mole fractions of (Al₂O₃, ZrO₂) in the (Al₂O₃)_x-(ZrO₂)_y-(SiO₂)_1−x−y composite films, the optical constants can meet the optical requirements for a high transmittance attenuated phase shift mask (HT-AttPSM) blank. The n-k values in the quadrangular area in the (x, y) plane, where x and y represent the mole fractions of Al₂O₃ and ZrO₂, respectively, meet the optical requirements for an HT-AttPSM blank with an optimized transmittance of 20 ± 5% in ArF lithography. It is noted that the quadrangular area is bounded by (0, 0.31), (0, 0.62), (0.26, 0) and (0.57, 0). All the films also met the chemical and adhesion requirements for an HT-AttPSM application. One (Al₂O₃)_0.1-(ZrO₂)_0.52-(SiO₂)_0.38 composite film was fabricated with optical properties that meet the optimized optical requirements of ArF-line HT-AttPSM blanks. Combined with these HT-AttPSMs, ArF-line (immersion) lithography may have the potential of reaching 65-, 45-nm and possibly the 32-nm technology nodes for the next three generations.     

CexAlyOz/TiN stack analysis for Metal-Insulator-Metal applications: Effect of annealing and the metal electrode deposition method

Ce_xAl_yO_z thin films were deposited on TiN metal electrode by metalorganic chemical vapour deposition method at 400 °C. The detailed physical characterization on Ce_xAl_yO_z/TiN stack upon annealing at different temperatures (600 °C and 850 °C) and for different deposition methods (Atomic vapour deposition (AVD) and Physical vapour deposition (PVD)) of electrode material were done for possible Metal-Insulator-Metal applications. X-ray diffraction results exhibited that the dielectric and TiN(AVD) are amorphous while TiN(PVD) is crystalline for the as deposited stacks. Annealing on Ce_xAl_yO_z/TiN(AVD) at 600 °C, initiates CeO₂ crystallization in the dielectric with composition of Ce:Al = 0.5 as obtained by X-ray photoelectron spectroscopy. In Ce_xAl_yO_z/TiN(PVD) stack, the dielectric remains in its amorphous state until 850 °C. However, TiO₂ crystallization is formed at 600 °C in Ce_xAl_yO_z/TiN(PVD). Time of flight secondary ion mass spectroscopy depth profiling data proves that the annealing at 600 °C caused the oxidation of both the metal electrodes and the inter-diffusion of Ti from the bottom metal electrode through the dielectric layer.     

Effect of the oxygen fraction on the structure and optical properties of HfOxNy thin films

The main purpose of this work was to prepare hafnium oxynitride (HfO_xN_y) thin films. HfO_xN_y thin films were deposited by radio frequency reactive magnetron sputtering from a pure Hf target onto Quartz and ZnS substrates at room temperature. The depositions were carried out under an oxygen-nitrogen-argon atmosphere by varying the flow rate of the reactive gases (oxygen/nitrogen ratio). The variation of the flow rate of the reactive gases changed the structure and properties of the films. Glancing incidence X-ray diffraction (GIXRD) was used to study the structural changes of as-deposited films; a new crystalline hafnium oxynitride phase was formed in a region of oxygen/nitrogen ratio. Cross-section of the films observed by SEM revealed that the films grew with a columnar-type structure, and surface observation with AFM showed values of surface roughness changed with the flow rate of the reactive gases, higher oxygen fraction had lower surface roughness than lower oxygen fraction. Visible spectra, infrared spectra, refractive index, absorption coefficient also changed with the variation of the oxygen fraction.     

Characterization of AlxGa1−xAs layers grown on (100) GaAs by metallic-arsenic-based-MOCVD

We present the electrical and structural characterization of Al_xGa_1−xAs layers grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium precursors were the metal-organic compounds trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Al_xGa_1−xAs layers that were grown at temperatures less than 750 °C present a high electrical resistivity. Independent of the used III/V ratio the samples that were grown at temperatures greater that 750 °C were n-type with an electron concentration of around 10¹⁷ cm⁻³ and a carrier mobility of 2200 cm²/V-s. Chemical composition studies by SIMS exhibit the presence of silicon, carbon and oxygen as the main residual impurities. Silicon concentration of around of 10¹⁷ cm⁻³ is very close to the free carrier concentration determined by the Hall-van der Pauw measurements. Composition homogeneity and structural quality are demonstrated by Raman measurements. As the growth temperature is increased the layers compensation decreases but the Raman spectra show that the crystalline quality of the layers diminishes.     

Comparative study of physical properties of vapor chopped and nonchopped Al2O3 thin films

Aluminium oxide being environmentally stable and having high transmittance is an interesting material for optoelectronics devices. Aluminium oxide thin films have been successfully deposited by hot water oxidation of vacuum evaporated aluminium thin films. The surface morphology, surface roughness, optical transmission, band gap, refractive index and intrinsic stress of Al₂O₃ thin films were studied. The cost effective vapor chopping technique was used. It was observed that, optical transmittance of vapor chopped Al₂O₃ thin film showed higher transmittance than the nonchopped film. The optical band gap of vapor chopped thin film was higher than the nonchopped Al₂O₃, whereas surface roughness and refractive index were lower due to vapor chopping.