利用DPVBi的空穴阻挡和发光特性而制作的白光器件

介绍了结构为:ITO/m-MTDATA(40 nm)/NPB(5 nm)/DPVBi(10～12 nm)/Rubrene(0.5 nm)/DPVBi(20～18 nm)/Alq(50 nm)/LiF(0.5 nm)/Al的白光器件.该器件采用了两个DPVBi层中间夹一个Rubrene的薄层,这种结构充分利用了DPVBi的空穴阻挡特性和发光特性,有力地平衡了来自于DPVBi的蓝光、Alq的绿光和Rubrene的黄光,从而使器件发射性能较好的白光.当第一层的DPVBi和第二层的DPVBi的厚度分别是11 nm和19 nm时,其他层的厚度保持不变,该器件在15 V电压下,最大亮度为11 290 cd/m2 ,对应的效率为1.71 cd/A,色坐标为(0.25,0.27),属于白光发射;在6 V时,其最大效率为3.18 cd/A.     

掺杂浓度和厚度对有机白光器件性能的影响

介绍了结构为ITO/2T(20nm)/NPBX(15nm)/DPVBi(15nm)/Alq3:Rubrene(10,x)nm/Alq3(40nm)/LiF(0.5nm)/Al的掺杂方法制备的白光器件。其中掺杂浓度x分别为1%、2%、3%、4%和5%(质量分数)。这种结构充分利用了Rubrene在有机电致发光器件中的良好的掺杂特性,从而使器件发射出性能较好的白光。首先讨论了Rubrene的掺杂浓度对器件性能的影响。当Rubrene掺杂浓度是3%(质量分数)时,色度最好(0.32,0.32)且色坐标稳定。在此基础上,讨论了掺杂层厚度对器件性能的影响。掺杂层的厚度Y分别为10,15,20,25,30nm变化时,制作了5个器件。随着掺杂层厚度的增加,器件发出的蓝光和黄光相对平衡,色度较好。其中掺杂层厚度为20nm时,器件的效率和亮度均最高,分别达到5.10cd/A和17130cd/m2。     

电压对有机蓝光器件发光光谱的影响

介绍了结构为ITO/40 nm 4,4′,4″-tris[N,-(3-methylphenyl)-N-phenylamino]tripheny- lamine(m-MTDATA)/5 nm N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine(NPB)/x nm 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl(DPVBi)/y nm 6,11,12,- tetraphenylnaphthacene(Rubrene)/40 nm tris(8-hydroxyquinoline)aluminum(Alq)/0.5 nm LiF/Al的器件,其发光光谱的半峰宽在电压由2 V变为12 V时,由140 nm变为70 nm,器件发光的峰值波长由456 nm变为444nm的规律。半峰宽变窄是由于随着电压的升高,被Ru- brene俘获的电子获得了足够的能量,越过Rubrene层,在DPVBi中与注入的空穴形成激子而复合发光的概率的逐步增加所造成的。峰值波长蓝移是由于激子的形成区域随着电压的增加逐渐由DPVBi层移向NPB层造成的。器件峰值波长的这种变化对器件的色度改善有着很大的影响。     

空穴传输层NPBX厚度对白光OLED性能的影响

讨论了空穴传输层材料NPBX厚度对白光有机电致发光器件(OLED)性能的影响.采用了ITO/2T-NATA/NPBX/DPVBi/Rubrene/DPVBi/Rubrene/Alq3/LiF/Al的多层结构器件.在这种多层结构的器件中,其他材料的厚度保持不变,使NPBX的厚度按10、15、20、25 nm的规律改变.当NPBX厚度为15 am时,器件性能最好.该器件在14 V电压下最大亮度为19 300cd/m2,在7 V的电压下最大效率为5.326 cd/A,色坐标为(0.27,0.33).     

高效率双发光层结构白色荧光有机电致发光器件

通过将橙色荧光染料Rubrene和蓝色荧光染料BCzVBi分别掺入NPB和DPVBi中作为发光层,制备了结构为ITO/m-MTDATA(30nm)/NPB(20nm)/NPB∶0.5wt% Rubrene(10nm)/DPVBi∶5wt% BCzVBi(15nm)/Bphen(25nm)/LiF(0.6nm)/Al的双发光层结构白色有机荧光电致发光器件。器件发光主要是Rubrene直接俘获载流子和主体材料DPVBi到客体BCzVBi的能量传递两种发光机制竞争的结果。在低压下Rubrene俘获载流子发光占主导地位,导致器件的橙光相对较强,随电压升高主客体能量传递增强,使蓝光相对强度增强。器件最大电流效率为6.5cd/A,最大亮度为16 140cd/m2。亮度从1 000cd/m2增加到10 000cd/m2,器件的发光色坐标从(0.33,0.37)变化到(0.30,0.32),始终处于白光区。     

掺杂Rubrene双发光区有机黄光器件的制作

制作了在N,N′-diphenyl-N,N′-bis-1-naphthyl)-(1,1′-biphenyl)-4,4′-diamine(NPB)和aluminium-tris-8-hydroxy-quinoline(Alq3)中分别掺杂黄色荧光染料5,6,11,12,-tetraphe-nylnaphthacene(Rubrene)的双发光区有机黄光电致发光器件。器件的结构为ITO/NPB(30nm)/NPB∶Rubrene(20nm)/Alq3∶Rubrene(20nm)/Alq3(30nm)/LiF(0.8nm)/Al。NPB作为空穴传输层材料,Alq3作为电子传输材料,NPB和Alq3中掺杂Rubrene的浓度分别为0.9%和1.4%。实验结果表明,由于Rubrene具有较强的载流子俘获能力,而且在Alq3和NPB层中进行掺杂,相对于单掺杂层器件为Rubrene提供了更多的俘获空位,从而提高了器件的性能。     

通过引入电子阻挡层的高效率的有机磷光白光器件

以CBP作为母体材料,绿色磷光染料Ir(ppy)3作为敏化剂,以荧光染料rubrene作为受主,制备了结构为ITO/2T-NATA(25 nm)/ NPBX (25-d nm)/ CBP:5%Ir(ppy)3:0.5%Rubrene(8 nm)/NPBX(d nm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10 nm)/LiF(1 nm)/Al的白光器件.在器件中,敏化剂Ir(ppy)3、荧光染料rubrene的浓度分别为5.0 wt%和0.5 wt%,发光层的厚度选择8 nm,通过调整两层NPBX的厚度来改善器件的性能,得到了比较理想的白光发射.当d的厚度为10 nm 时,器件在7 V的电压下最大电流效率达到11.2 cd/A,在17 V的电压下其最大亮度达到28 170 cd/m2,色坐标为(0.37,0.42),处于白光区.     

利用C-545T超薄层多层结构的白光器件

为了探讨(3-545T超薄层的发光特性,设计了结构为:ITO/2T-NATA(20 nm)/NPBX(20 nm)/C-545T(d nm)/BCP(8 nm)./Alq(40 nm)/LiF(0.5 nm)/Al的绿光器件.结果表明,随着C-545T层厚度d的增加,器件的亮度和效率均下降,这是由于C-545T染料的浓度淬灭效应引起的.在此基础上,制备了基于C-545T超薄层为发光层之一的多层结构的白光器件,器件结构为:ITO/NPBX(30 nm)/Rubrene(0.2 nm)/NPBX(5 nm)/DPVBi (20 nm)/NPBX(4 nm)/C-545T(0.1 nm)/Alq(30 nm)/LiF(0.5 nm)/Al.在驱动电压为16 V时,其最大亮度达到12 320 cd/m2,对应的色坐标为(0.32,0.40),在电压为4 V时,最大光功率效率达到了3.45 lm/w.     

基于FHQZn发光的色度稳定的有机白光器件

研究了一种新型发光材料(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinolato-Zinc的发光性能,利用它的空穴传输和发光特性制备了有机白光器件,器件的结构为:ITO/2T-NATA(15nm)/FHQZn(38nm)/NPB(25nm)/BCP(10nm)/Alq(30nm)/LiF(0.5nm)/Al,其中,(E)-2-(2-(9H-fluoren-2-yl)vinyl)quinoato-Zinc(FHQZn)作为空穴传输层和黄橙色发射层,N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPBX)作为蓝光发射层。器件最大的电流效率为1.68cd/A(at7V),最大的亮度为4624cd/m2(at12V),此时色坐标为(0.28,0.25)。器件的色坐标由7V(66.83cd/m2)时的(0.27,0.29)到12V(4624cd/m2)时的(0.28,0.25)几乎不变,是一个基于新型材料的色度较稳定的有机白光器件。     

单异质结蓝色有机电致发光器件

为了增加电子注入,蓝色有机电致发光器件中通常包含一层由发绿光的Alq组成的电子传输层,因此器件的发光常常不可避免地要出现Alq本身的发光从而影响器件的发光色纯度.在以胺类衍生物(N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'biphenyl-4,4'diamine,TPD)为空穴传输层,DSA衍生物(4,4'-bis (2,2-diphenylvinyl)-1,1'-biphenyl, DPVBi)为发光层,当用Liq为电子注入层与Al结合构成复合电极时所制备的双层单异质结蓝色有机电致发光器件中由于去除了Alq而得到色度纯正的DPVBi的发光,同时又保持了较高的发光效率.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks