Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

We investigated defect structures in the GaN film grown on a convex patterned sapphire substrate (CPSS) to determine the origin of structural improvement by transmission electron microscopy (TEM) and laser confocal scanning microscopy (LCSM). From the TEM results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the curved slant region of the convex pattern; they converged at the top of the convex patterned region by staircase-upward propagation. This scenario seems to effectively prevent TDs from vertical propagation in the trench region. The photoluminescence mapping and spectra obtained by LCSM are consistent with these results from TEM observations. The generation of staircase-like TDs relates to the formation of a terraced surface during the growth, and suggests a probable mechanism that changes the propagation direction of TDs via the curved surface of the CPSS. The lateral growth and staircase-upward propagation of TDs are major factors on structural improvement of the GaN film grown on CPSS.     

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Transmission electron microscopy is used to analyse a range of defects observed in hexagonal GaN films grown on sapphire and GaN substrates by metalorganic chemical vapour deposition. Large angle convergent beam electron diffraction is used to analyse the Burgers vectors of dislocations and to show that hollow tubes, or nanopipes, are associated with screw dislocations having Burgers vectors±c. Weak-beam electron microscopy shows that dislocations are dissociated into partials in the (0001) basal plane, but that threading segments are generally undissociated. The presence of high densities of inversion domains in GaN/sapphire films is confirmed using convergent beam electron diffraction and the atomic structure of the {

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} inversion domain boundary is determined by an analysis of displacement fringes seen in inclined domains.     

Catalyst-free ZnO nanowires grown on a-plane GaN

ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)_ZnO||(110)_GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.     

Microstructure Characterization of Single-crystal ZnO Nanorods Synthesized by Solvothermal at Low Temperature

Single-crystalline ZnO nanorods have been synthesized by a simple solvothermal process at low temperature. Transmission electron microscopy （TEM） observations have confirmed that the as-synthesized products have rod-like morphologies with diameters ranging from several nanometers to 30 nm and lengths from 100 nm to 2 μm. Such hexagonal ZnO nanorods are structurally uniform and the growth direction is identified to be [0001]. Growth mechanism of the ZnO nanorods was proposed.     

Photoluminescence study of ZnO structures grown by aqueous chemical growth

ZnO micro-structures were deposited by aqueous chemical growth on Si (100) substrates, their morphology and size depending on the growth period. Characterization of the structures was performed using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. Photoluminescence spectra recorded at 18 and 295 K for 325 nm CW excitation indicated that these are strongly affected by the morphology of the structures. Rods and tubes emit stronger UV radiation, in contrast to stronger yellow-green emission observed for flower-like structures. A red shift of the UV emission was found for increasing input power, while, thermal annealing of the samples induced stimulated emission for quite high excitation intensities.     

Microstructures of GaN thin films grown on graphene layers

Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.     

化学溶液法外延组装ZnO分级纳米结构

采用气相法、液相法相结合的方法外延组装了一种形貌新颖的复杂ZnO分级纳米结构--"纳米毛刷".首先用热蒸发的方法制备了宽面为极性面的ZnO纳米带,然后采用化学溶液法,在强碱溶液中在ZnO纳米带的极性面上外延生长Zno纳米棒阵列,实现了ZnO分级纳米结构"由下而上"地外延组装.采用负离子配位多面体生长基元模型讨论了ZnO分级纳米结构的外延组装机理.这种ZnO分级结构的实现,可望作为ZnO纳米器件的原型材料构建新型光电器件.     

Hydrothermal treatment of ZnO nanostructures

Hydrothermal treatment of ZnO nanostructures involves low temperatures (150-200 °C) and elevated water vapor pressure for the purpose of the improvement in the material properties. Under such moderate conditions, no significant changes in the morphology would be expected. Nevertheless, such treatment results in a significant change of nanostructured morphologies of ZnO. The observed changes are dependent on the starting material properties and the substrate used for the growth. In the case of Si substrate, hydrothermal treatment results in significant Si contamination of the samples. In terms of the optical properties, improvements are observed only in some cases, while samples with excellent starting optical properties are degraded by the treatment. Mechanisms responsible for the observed changes are discussed.     

Morphological control of flower-like ZnO nanostructures

Flower-like ZnO nanostructures composed of different building blocks, such as hexagonal pyramids, hexagonal prisms, and cones, have been synthesized on a large scale by a simple hydrothermal method in the absence of surfactants or organic solvents. The effects of the concentration of NaOH, reaction temperature, and reaction time on the morphologies of the resulting products have been investigated. The morphologies and the crystal structures of flower-like ZnO nanostructures were characterized by X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM).     

Investigations of selectively grown GaN/InGaN epitaxial layers

We have studied GaN/InGaN heterostructures grown by selective area low pressure metalorganic vapor phase epitaxy (LP-MOVPE). A GaN layer already grown on the c-face of sapphire has been used as substrate, partly masked by SiO₂. In a second epitaxial step a GaN/InGaN single heterostructure and GaN/InGaN/GaN double heterostructures were grown on the unmasked rectangular fields. We obtained good selectivity for GaN and for InGaN. A larger growth rate as compared to planar epitaxy and strong growth enhancement at the edges was observed. Spatially resolved measurements of the luminescence show an increase in indium incorporation of about 80% at the edges. Besides the larger indium offering at the edges, this is due to an enhanced growth rate. Very smooth facets are obtained. The influence of pressure on the surface morphology and growth enhancement was investigated.     

不同衬底上氧化锌纳米结构的水热法制备研究

采用水热方法,以氯化锌和氨水为反应溶液,在铜和硅等不同基底上制备出不同特征的ZnO纳米棒和纳米管阵列.借助SEM和xRD等手段对其结构和形貌进行了分析研究.在常温下该样品表现出很好的光致发光性能.实验表明,在水热法中ZnO纳米材料的形貌、取向、排列等特征与衬底的选择有直接的关系.通过分析ZnO纳米管的形成过程,提出了一种新的由ZnO纳米棒在低温下溶解制得ZnO纳米管的生长机理.     

Control of epitaxial growth orientation in ZnO nanorods on c-plane sapphire substrates

This paper presents a study on low temperature hydrothermal growth of ZnO nanorods (NRs) on pre-seeded (0001) sapphire substrates. Prior to hydrothermal growth of ZnO NRs, epitaxial ZnO seeds were grown by metal-organic chemical vapour deposition under various process conditions. Findings show that the majority of ZnO NRs inclined at a specific angle of about 38° to the direction perpendicular to the substrate surface and exhibited a preferential in-plane alignment, besides other NRs growing vertically from the sapphire surface. X-ray diffraction φ-scan measurements reveal that the ZnO nanorods displayed two distinct epitaxial relationships with sapphire which were (0001)_ZnO//(0001)_sapphire and (0001)_ZnO//(101?4)_sapphire, respectively. Reduced lattice mismatch between ZnO and sapphire is responsible for the inclined ZnO NRs growth. The growth direction of ZnO NRs is remarkably dependent on the growth conditions of ZnO seeds and sapphire substrate pre-treatment. The epitaxial orientations of ZnO seeds grown on the sapphire substrate dominate the subsequent ZnO NRs growth and can be controlled through adjusting growth conditions.     

Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique

Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 C have a length of 1 μm and a diameter of 0.75 μm while that grown with oxygen admittance at 600 C have a length of 1.5-2 μm and a diameter of 1 μm. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 C.     

Improved thermal stability of ZnO transparent conducting films with a ZnO overlayer

A study of the thermal stability of transparent conducting ZnO thin film in air is reported. By depositing a thin ZnO overlayer (~ 10 nm) on aluminum and gallium-codoped ZnO thin film (AGZO), the thermal stability of the AGZO thin film could be significantly improved. Electrical and structural characterizations of the AGZO thin films with and without the overlayer were performed and the mechanism of the enhanced thermal stability by the overlayer was proposed.     

Synthesis and Characterization of Transition Metals Doped ZnO Nanorods

Different morphologies of undoped and transition metals(Mn,Co and Ni) doped one-dimensional(1D) ZnO nanocrystals were successfully synthesized by chemical method in an air atmosphere using polyvinylpyrrolidone(PVP) as a surfactant.The structure and optical properties were studied by scanning electron microscopy(SEM),transmission electron microscopy(TEM),X-ray diffraction(XRD),thermal gravimetric analysis(TGA),ultraviolet visible(UV-vis) absorption spectra and photoluminescence(PL) spectra.The doped ZnO nanorods exhibited a blue-shifted band gap and enhanced ultraviolet(UV) emission.In addition defect related emission was observed for the doped ZnO.     

Dendritic and epitaxial growths of ZnO particle-rod and rod-rod nanostructures with quasi-one-dimensional and two-dimensional configurations

Quasi-one-dimensional and two-dimensional ZnO nanostructures have been fabricated through thermal evaporation approach. The microstructures of the ZnO nanostructures have been studied using scanning electron microscopy and high-resolution electron microscopy. Quasi-one-dimensional ZnO nanostructures are formed by dendritic growths of ZnO nanoparticles from the stem nanorods surfaces, forming particle-rod nanostructures. While epitaxial growths of branch nanorods from the stem nanorods configure two-dimensional ZnO nanostructures. The epitaxial growth orientation relationship can be described as [2? 110]_R1 || [2? 110]_R2 and (0001) _R1 || (011?0)_R2. The growth mechanism of the quasi-one-dimensional and two-dimensional ZnO nanostructures has been discussed.     

Novel ZnO nanostructures grown on carbon nanotubes by thermal evaporation

We report on the formation of ZnO/carbon nanotubes heterostructures achieved by means of a thermal evaporation method. Scanning electron microscopy revealed that the main building block of the observed morphologies was the nanorod whose self-assembling resulted in various structures such as polypods and nano-hedgehogs, depending on various factors as well as the location of the ZnO-CNT junction. X-ray diffraction and photoluminescence spectroscopy were used to study the structure and optical properties of obtained nanostructures. Semi-empirical molecular orbital calculations gave evidence for the nature of the binding between ZnO and CNTs.     

Effect of growth temperature on polytype transition of GaN from zincblende to wurtzite

We have investigated effect of growth temperature on the polytype conversion of cubic GaN (c-GaN) grown on GaAs (001) substrates by MOVPE. It was found that the polytype transition of GaN from zincblende (cubic) to wurtzite (hexagonal) structures is much dependent on the growth temperature. Transmission electron microscopy (TEM) observations demonstrate that the GaN grown layers have the cubic structure (c-GaN) and contain bands of stacking faults (SFs) parallels to {111} planes. For low growth temperatures (∼ 900 °C), XRD results demonstrate that the GaN grown layers with the cubic phase purity higher than 85% were obtained. No different types of single diffraction spots, indicating the incorporation of single-crystal h-GaN, on the selected area diffraction (SAD) pattern was observed. It is also found that a density of SFs decreases with the distance from the interface of c-GaN/GaAs. On the other hand, GaN layers exhibited a transition from cubic to mixed cubic/hexagonal phase under conditions of increasing growth temperature (∼ 960 °C) as determined using TEM-SAD technique with complementary XRD and PL observations. In addition, the optical characteristics of c-GaN layers are shown to be very sensitive to the presence of the single-crystal h-GaN.     

类石墨烯单层结构ZnO和GaN的压电特性对比研究

本研究采用基于密度泛函理论的第一性原理计算了类石墨烯单层结构ZnO(g-ZnO)和GaN(g-GaN)的力学、电学和压电性质,重点研究了施加应变后原子坐标弛豫与否的Clamped-ion和Relaxed-ion两种模式的弹性刚度系数和压电张量。结果表明单层g-ZnO和g-GaN均具有半导体属性和较好的弹性。单层g-ZnO和g-GaN的压电系数分别约为9.4和2.2 pm·V^–1,预测这类单层材料在极薄器件中可能具有压电效应,且g-ZnO的压电性能更好。因此,类石墨烯单层ZnO有望用于压力传感器、制动器、换能器及能量收集器等纳米尺度器件。     

Single crystalline ZnO nanorods grown by a simple hydrothermal process

Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 µm. Raman peak at 437.8 cm^− 1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.