Nanowires for energy generation

As a result of their morphology, nanowires bring new properties and the promise of performance for a range of electronic devices. This review looks into the properties of nanowires and the multiple ways in which they have been exploited for energy generation, from photovoltaics to piezoelectric generators.     

钛酸钠纳米线制备TiO_2纳米线的反应条件

结合离子交换-高温烧结法,由钛酸钠纳米线制备了TiO_2纳米线。通过XRD、Uv-vis漫反射和SEM等测试手段,探讨离子交换时间和高温烧结温度对制备TiO_2纳米线的影响,并以甲基橙为目标污染物测试其光催化性能。结果表明:离子交换时间越长越有利于钛酸纳米线的形成,离子交换48h时钛酸钠纳米线基本转换成为钛酸纳米线;过低的烧结温度不利于TiO_2纳米线的形成,烧结温度650℃时钛酸纳米线基本分解成为TiO_2纳米线;钛酸钠纳米线几乎没有光催化性能,而TiO_2纳米线具有很强的光催化性能。     

Nanowires for integrated multicolor nanophotonics

Nanoscale light-emitting diodes (nanoLEDs) with colors spanning from the ultraviolet to near-infrared region of the electromagnetic spectrum were prepared using a solution-based approach in which emissive electron-doped semiconductor nanowires were assembled with nonemissive hole-doped silicon nanowires in a crossed nanowire architecture. Single- and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III-V and II-VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off. In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection "chips" with multiplexed analysis capabilities.     

Ferromagnetic GaN--Cr Nanowires

Using first-principles theory, we predict ferromagnetism in Cr-doped GaN nanowires irrespective of the sites that the Cr atoms occupy. This is in contrast to Mn-doped GaN nanowires in which the magnetic coupling between the Mn atoms is sensitive to the Mn--Mn and Mn--N distances, although the ground state of Mn-doped GaN nanowires is ferromagnetic. Each Cr atom carries a magnetic moment of about 2.5 micro(B). The magnetic moment at the N site, however, is small and is aligned antiferromagnetically to the moments at the Cr atom. The magnetization axis is perpendicular to the axis of the wire, but the anisotropy energy is rather small. The easy solubility of Cr in GaN and the lack of sensitivity of ferromagnetic coupling to Cr distribution suggest that Cr-doped GaN nanowires may be a more suitable system for applications in spintronics than Mn-doped GaN nanowires.     

纳米线研究进展(2):纳米线的表征与性能(续上期)

本文从纳米线的制备与生长机制、表征、性能和应用几方面综述了纳米线的最新研究进展。着重阐述了激光烧蚀法和模板法制备纳米线的过程及各自的生长机制。对纳米线的电、光、磁性能 ,及其潜在的应用前景作了介绍     

Noise in Silicon Nanowires

The current–voltage and noise characteristics of bridging silicon wires have been measured at room temperature. From the linear current–voltage characteristics the bulk and contact resistance contributions are extracted and modeled. The excess noise observed at low frequencies is interpreted in terms of bulk and contact noise contributions, with the former comparable, in terms of Hooge parameter values, to the low noise levels observed in high-quality silicon devices. The contact noise is significant in some devices and is attributed to the impinging end of the bridging nanowires.     

Layered-Perovskite Nanowires with Long-Range Orientational Order for Ultrasensitive Photodetectors

2D layered metal-halide perovskites combine efficient exciton radiative recombination in crystal interior with long-distance free-carrier conduction at layer edges, which are promising candidates for realizing high-performance photovoltaic, light-emission and photodetection devices. The anisotropic electrical conductivity in layered perovskites imposes an additional requirement of orientational control for enabling favorable charge transport. However, rational fabrication of single-crystalline nanostructures with pure crystallographic orientation is still elusive. Herein, large-scale pure (101)-orientated 2D-perovskite single-crystalline nanowire arrays are realized by combining solvent engineering with the capillary-bridge lithography technique. Ordered nucleation at liquid–air interface and unidirectional growth along the dewetting direction are demonstrated by fluorescence microscopy and grazing-incidence X-ray scattering in discrete capillary bridges. In consideration of crystal interior exhibiting high resistance arising from the serial insulating organic barriers and ultrafast dissociation of excitons to generate long-lived free carriers at layer edges, ultrasensitive photodetectors are demonstrated with average responsivity exceeding 1.1 × 10⁴ A W⁻¹ and detectivity exceeding 9.1 × 10¹⁵ Jones.     

Site-Specific Magnetic Assembly of Nanowires for Sensor Arrays Fabrication

The effect of variation in local magnetic field on magnetic assembly of 30 and 200 nm diameter Ni nanowires synthesized by template directed electrodeposition was investigated with different materials (Ni–Ni and Ni–Au) and shapes of electrodes. Ni–Au paired electrodes improved confinement of the assembled Ni nanowires across the electrode gap because of the narrower distribution of magnetic field around the gap between the two electrodes. Simulation results indicated a local magnetic field strength at the electrode tip increased by a factor of 2.5 with the use of a needle-shape electrode as compared to rectangular-shape electrode. The resistance of nanowire interconnects increased as the applied voltage was raised, and under the same applied voltage, the increase in resistance is further enhanced at lower temperatures because of higher current density.