Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

The Co/Cu/Co sandwiches with a semiconductor Si buffer layer were prepared by high vacuum electron-beam evaporation. The influence of the Si buffer layer with different thickness on the giant magnetoresistance (GMR) effect in the Co/Cu/Co sandwiches was investigated. It was found that the GMR showed an obvious anisotropy when the thickness of Si buffer layer was larger than or equal to 0.9 nm, and that the GMR was basically isotropic with an Si buffer layer thinner than 0.9 nm. The anisotropic behavior of GMR can be ascribed to the in-plane magnetic anisotropy in the sandwiches. Due to the interdiffusion at the Si buffer/Co interface, a Co2Si interface layer with a good (301) texture formed and induced the in-plane magnetic anisotropy in the sandwiches. The dependence of the crystalline texture of the sandwiches on the thickness of Si buffer layer was also studied.     

SURFACE ELECTRICAL PROPERTIES AND STRUCTURE OF YTTRIA-PARTIALLY-STABILIZED ZIRCONIA IMPLANTED WITH 57Fe IONS

Sintered plates of 5mol% yttria-partially-stabilized zirconia have been implanted at room temperature with 5×1015to 2×1017 Fe+ ions/cm2 at 140 KeV.Electrical measurement,Rutherford backscattering spectroscopy(RBS),Raman spectroscopy and X-ray photoelectron spectroscopy(XPS) have been used to study the surface electrical properties and the structure of the implanted layer before and after thermal annealing treatment in N2.     

Impact of high dose Kr^＋ ion irradiation on the corrosion behavior and microstructure of Zircaloy-4

In order to investigate the ion irradiation effect on the corrosion behavior and microstructure of Zircaloy-4, the Zircaloy-4 film were prepared by electron beam deposition on the Zircaloy-4 specimen surface and irradiated by Kr ions using an accelerator at an energy of 300 keV with the dose from 1×1015 to 3×1016ions/cm2. The post-irradiation corrosion tests were conducted to rank the corrosion resistance of the resulting specimens by potentiodynamic polarization curve measurements in a 0.5 mol/L H2SO4 water so- lution at room temperature. Transmission electron microscopy (TEM) was employed to examine the microstructural change in the surface. The potentiodynamic tests show that with the irradiation dose increasing, the passive current density, closely related to the surface corrosion resistance, decreases firstly and increases subsequently. The mechanism of the corrosion behavior transformation is due to the amorphous phase formation firstly and the amorphous phase destruction and the polycrystalline structure formation in the irradiated surface subsequently.     

Effect of copper ions implantation on the corrosion behavior of ZIRLO alloy in 1 mol/L H2SO4

1. IntroductionZIRLO alloy is widely used in the nuclear industrybecause of its low thermal neutron capture cross sec-tion, favorable mechanical properties, and good corro-sion resistance. For example, ZIRLO alloy can serve asfuel cladding, spreaders for …     

Comparison of Isothermal Oxidation Behavior of Co-10Cr-xSi (x=0, 5, 10) Alloys at 1.073.K

The oxidation behavior of Co-10Cr-xSi (x=0, 5, 10, nominal composition, at%) alloys in 0.1.MPa pure O₂ at 1.073.K was investigated. Co-10Cr presents the worst oxidation resistance with the mass gain of about 7.531.mg/cm² after 24.h oxidation, while Co-10Cr-10Si presents the best oxidation resistance with the much lower mass gain of about 0.078.mg/cm². Co-10Cr-10Si is about two magnitudes lower than that of Co-10Cr. The oxidation behavior of Co-10Cr-5Si is intermediate between that of Co-10Cr and Co-10Cr-10Si. The nodular oxides have occupied most of the alloy surface, and their microstructure is similar to Co-10Cr, to some extent. On the contrary, only a fraction of the surface is covered by the Cr₂O₃ layer, whose microstructure is similar to that of Co-10Cr-10Si.     

机械致单轴应变SOI晶圆的制备

提出了一种晶圆级单轴应变绝缘层上硅(SOI)的新方法,并阐述了其工艺原理．将直径为100mm(4英寸)的SOI晶圆片在曲率半径为0.75m的弧形弯曲台上进行机械弯曲,弯曲状态下的SOI晶圆片在250℃下进行了20h的热退火处理．对弯曲退火后SOI晶圆片进行了拉曼光谱表征,其拉曼频移为520.3cm^{-1,小于体硅的典型值,拉曼频移差达到-0.3cm-1,说明弯曲退火后的SOI晶圆片发生了单轴张应变．相应的应变量计算为0.077%,高于文献报道的0.059%．}     

Si/SiO2周期性多层膜反射特性的FDTD数值模拟

Si/SiO2周期性多层膜是一种电介质型频率选择表面,它与金属型频率选择表面相比具有较小的吸收损耗。从介质波导理论出发,可以分析电介质型频率选择表面的反射与透射机理。与均匀介质层相比,介电常数呈周期变化的电介质层可能会激发出满足相位匹配条件k0sinθ=βg的导波模,从而在介质板的上表面与下表面辐射出与导波模具有相同波数的平面波。介质层上再辐射的平面波与上表面直接产生的反射波叠加便形成了总的反射场。当两种波相位相同时,就会增强总反射,否则反射将会减弱,并且透射波也会有相同的规律。采用周期结构时域有限差分方法可对一种Si/SiO2周期性多层膜的反射特性进行数值模拟,并计算出波长在1~100 mm微波波段的反射系数。计算结果表明,当入射角为45°时,入射波长在5,9,20 mm处具有很高的反射系数(均达到0.88以上)。因此,通过调整相关参数可以获得所需的频率选择表面。     

STUDY ON COMPLEX IMPEDANCE SPECTROSCOPY OF CU-IMPLANTED SEMICONDUCTING (BaO.72PbO.28)TiO3 CERAMICS

The ac impedance of Nb-doped semicon-ducting (Bao.72Pbo.28)TiO3 ceramics implanted with copper ions(200keV,6X1015 and 1X1017 ions/cm2) in the temperature range 25-320C and the frequency range 10 Hz -13MHz was measured. According to the change of impedance spectroscopy and the equivalent circuit model of semiconducting(Ba, Pb)TiO3 ceramics, the dependence of resistance of bulk and grain-boundary on temperature was analyzed. The results show that relatively low dose must be used to increase the magnitude of the positive temperature coeffieient of resistance(PTCR)effects in the cermmics. In addition,the effects of Cu ion implantation on the PTCR behavior of the ceramics was studied by raststance-tempera-ture measurement.     

杂质及Ce含量对Al-Li-Cu-Zr和Al-Li-Mg-Zr合金韧化水平的影响

研究了 Fe,Si,Na,K杂质及 Ce微合金化对 A l-L i-Cu-Zr及 Al-L i-Mg-Zr合金内、外韧化水平的影响 .杂质降低了 Al-L i-Cu-Zr合金的内韧化水平 ,从而降低了其总体韧化水平 .由于 Al-L i-Cu-Zr合金中添加微量 Ce可明显提高材料的内韧化水平及抑制杂质的脆化作用 ,故可改善合金的断裂韧性 .对于Al-L i-Mg-Zr合金 ,Ce的微合金化不能提高材料的韧化水平     

快速热处理的[Fe/Pt]n薄膜的结构和磁性

采用直流磁控溅射方法在Si基片上制备[Fe/Pt]_n薄膜,利用X射线荧光光谱仪(XRF)、X射线衍射仪(XRD)和振动样品磁强计(VSM)分析薄膜的组分、结构和磁性。研究结果表明：[Fe/Pt]_n薄膜经过600 ℃快速热处理,得到了L1₀-FePt薄膜。对于[Fe (x nm)/Pt (0.5 nm)]_n薄膜,当Fe层厚度为0.7 nm时,薄膜的有序度最大,平行膜面和垂直膜面的矫顽力均最高;对于不同调制周期的[Fe/Pt]_n薄膜,有序度随调制周期先增大后减小,平行膜面的矫顽力均高于垂直膜面的矫顽力,当调制周期为2.4 nm时,薄膜平行膜面的矫顽力最大。     

中子嬗变掺杂直拉硅单晶内吸除效应机理的探讨

中子嬗变掺杂直拉硅(NTDCZSi)作内吸除处理时(IG 处理),清洁区(DZ)和吸杂区(GZ)的形成机理与直拉硅(CZSi)不同,它们的形成是辐照缺陷与硅中间隙氧相互作用的结果.DZ 的宽度主要取决于IG 退火时辐照空位在样品表面附近深度内过剩的宽度,GZ 则是氧以体内辐照间隙型缺陷团为核心非均匀成核形成的.氧的外扩散和体内过饱和沉淀加速了 DZ 和 GZ 的完成.     

微量稀土Y对高纯铝织构的影响

采用晶体取向分布函数(ODF)法研究和分析了在高纯铝中加入微量稀土Y对冷轧形变织构和再结晶立方织构的影响.结果表明:在高纯铝中添加微量Y,可提高铝箔中再结晶立方结构的成分,当w(Y)为0.001 5％时,立方织构很强;但Y添加量的变化不改变冷轧织构类型.作用机理是微量稀土Y与高纯铝中杂质元素可形成FeYAl8、Fe6YAl6、Fe4YAl8、Si1YAl2、Si2YAl2及Cu4YAl8等化合物,这些化合物的形成能净化基体,退火时有效消除了杂质元素,特别是Fe对立方晶核形成和长大的阻碍作用,从而可提高再结晶立方织构成分.     

Microstructures and fatigue-free properties of the La<Superscript>3+</Superscript> and Nd<Superscript>3+</Superscript> doped Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films prepared by modified sol-gel technique

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) and Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin films were fabricated on Pt/TiO₂/SiO₂/Si (100) substrates by a modified sol-gel technique. X-ray diffraction indicated that these films were of single phase with random polycrystalline orientations. The surface morphologies of the films were observed by scanning electron microscope, showing uniform, dense films with grain size of 50–100 nm. Well-saturated hysteresis loops of the films were obtained in metal-ferroelectric-metal type capacitors with Cu top electrodes at an applied voltage of 400 kV/cm, giving the remanent polarization (2P _r) and coercive field (2E _c) values of the films of 25.1 μC/cm² and 203 kV/cm for BLT, and 44.2 μC/cm² and 296 kV/cm for BNT, respectively. Moreover, these capacitors did not show fatigue behaviors after up to 1.75×10¹⁰ switching cycles at the test frequency of 1 MHz, suggesting a fatigue-free character. The influences of the La³⁺ and Nd³⁺ doping on the properties of the films were comparatively discussed. Supported by the National Key Basic Research and Development Program of China (Grant No. 2006CB932305) and the Natural Science Foundation of Hubei Province, China (Grant No. 2004ABA082)     

球型静力触探仪贯入双层土的困土效应

为研究各种几何类型的球型静力触探仪在双层黏土地基中的贯入特性,采用改进的RITSS(remeshing and interpolation technique with small strain)大变形有限元方法对贯入过程进行数值模拟,研究土体流动特性和贯入阻力变化规律。利用理论解和试验结果验证模型的有效性,通过参数分析探讨上层土厚度、土体强度、球土间摩擦因数和杆轴投影面与球截面面积比等因素对贯入特性的影响。结果表明,球型静力触探仪贯入上硬下软双层黏土地基时存在困土现象(即上层硬土陷于探头底端并被带入下层土)。困土尺寸是影响其困土效应的关键因素。研究发现,困土尺寸随下层土与上层土不排水抗剪强度比的减小而增大,随球土间摩擦因数的增大而增大,杆轴面积比对贯入特性有一定的影响,但是相对摩擦因数和土体强度比影响较小,与上层土厚度和下层土不排水抗剪强度无关。困土厚度变化为0～0.20D、困土宽度变化为0～0.50D。困土效应增大下层软土贯入阻力,导致不排水抗剪强度计算值偏大。基于影响因素量化分析,提出考虑土体强度特性、杆轴比和摩擦因数因素的困土效应修正公式,得到更为准确的下层软土不排水抗剪强度值。     

溶胶-凝胶法制备（Nd,Bi）_4Ti_3O_（12）铁电薄膜

采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上制备了（Nd,Bi）4Ti3O12薄膜。将薄膜于空气中分别进行每1层、每2层、每3层500℃预退火10 min,最后于氮气氛中680℃退火30 min。结果表明：预退火工艺对薄膜的结构和铁电性能都有影响：每一层预退火处理的薄膜具有较大的剩余极化值和最小的矫顽场（2Pr=47.8μC/cm2,2Ec=254 kV/cm）。所有薄膜都呈现良好的抗疲劳特性。     

SOI基垂直入射Ge PIN光电探测器的研制

研制了在SOI衬底上工作于近红外波段的垂直入射GePIN光电探测器。采用低温Ge缓冲层技术,在超高真空化学气相淀积系统(UHV/CVD)上生长探测器材料。测试表明,器件的暗电流主要来源于表面漏电流,暗电流密度随着尺寸的增加而减小,在2V偏压时暗电流密度可达17.2mA/cm2;器件在波长1.31μm处的响应度高达0.22A/W,对应量子效率为20.8%。无偏压时,器件的响应光谱在1.2～1.6μm波长范围内观察到4个共振增强峰,分别位于1.25、1.35、1.45和1.55μm左右,峰值半高宽约为50nm,共振增强效应是由SOI衬底的高反射率引起的。采用传输矩阵法模拟的响应光谱与实验测量结果吻合良好。     

离子注钇对Incone1718合金氧化行为的影响

对Ｉｎｃｏｎｅｌ７１８合金及其表面分别注入３＊１０＾１６Ｙ＾＋／ｃｍ＾２和３＊１０＾１７Ｙ＾＋／ｃｍ＾２剂量钇的样品在８００℃空气中进行了恒温氧化和循环氧化研究,通过热重分析和扫描电镜测试,发现注钇后Ｉｎｃｏｎｅｌ７１８合金的抗恒温氧化及抗循环氧化性能显著提高。     

Microstructure and Dielectric Property of 3D BN_f/Si_3N_4 Fabricated by CVI Process

As potential wave-transparent materials applied at high temperatures, 3D BN_f/Si_3N_4 ceramic matrix composites were prepared by low pressure chemical vapor infiltration or deposition(LPCVI/CVD) process from SiCl_4-NH_3-H_2-Ar gas precursor at 800 oC. The densification process, microstructure and dielectric properties of 3D BN_f/Si_3N_4 composites were investigated. The results indicated that 3D BN_f/Si_3N_4 was successfully fabricated by LPCVI/CVD, with final open porosity of 2.37% and density of 1.89 g/cm~3. Densification kinetics of 3D BN_f/Si_3N_4 is a typical exponential pattern. The Si_3N_4 matrix was uniformly infiltrated into porous BN_f preform. The deposited Si_3N_4 matrix was amorphous by XRD analysis. Introduction of BN fiber into Si_3N_4 ceramic lowered the permittivity of Si_3N_4. The fabricated BN_f/Si_3N_4 composites possess low permittivity of 3.68 and low dielectric loss of lower than 0.01, which are independent of temperature below400 oC. Transmission coefficient of BN_f/Si_3N_4 composite is 0.57 and keeps stable below 400 oC. BN_f/Si_3N_4 can be fabricated at low temperature and may be candidates for the microwave transparent materials.     

500V沟槽阳极LIGBT的设计与优化

介绍一种双外延绝缘体上硅(silicon on insulator,SOI)结构的沟槽阳极横向绝缘栅双极型晶体管(trenchanode lateral insulated-gate bipolar transistor,TA-LIGBT).沟槽阳极结构使电流在N型薄外延区几乎均匀分布,并减小了元胞面积;双外延结构使漂移区耗尽层展宽,实现了薄外延层上高耐压低导通压降器件的设计.通过器件建模与仿真得到最佳TA-LIGBT的结构参数和模拟特性曲线,所设计器件击穿电压大于500 V,栅源电压Vgs=10 V时导通压降为0.2 V,特征导通电阻为123.6 mΩ.cm2.     

Ce掺杂对Mn/ACN催化剂低温NH3-SCR脱硝活性的影响

采用浸渍法将活性组分Mn、Ce负载到酸处理后的椰壳活性炭(ACN)上,制备出采用浸渍法将活性组分Mn、Ce负载到酸处理后的椰壳活性炭(ACN)上,制备出Mn/CAN和Mn-Ce/ACN脱硝催化剂,在固定床上对所制备的催化剂进行了脱硝性能评价,着重探讨了两种活性组分的负载顺序、负载量对催化剂活性的影响,并对催化剂进行了BET、SEM、XRD、XPS表征。结果表明,通过比较Mn/CAN和Mn-Ce/ACN催化剂的脱硝活性,发现Ce的添加能明显提高催化剂的脱硝活性,在温度高于90oC时能达到90%以上的NO去除率,在120-250oC之间,NO转化率维持在100%。活性组分的负载顺序及负载量是影响催化剂活性的重要因素。同时负载活性组分,Ce、Mn负载量均为5%时,催化剂表现出最好的脱硝性能。Mn负载在活性炭上,降低了活性炭的比表面积和孔容,而Mn、Ce负载量均为5%的Mn-Ce/ACN的比表面积和微孔孔容降到695.0m2/g和0.130cm3/g,随着Mn、Ce负载量的增加,比表面积和孔容进一步降低;当Ce、Mn负载量均增加到10%时,其比表面积和微孔孔容只有539.8m2/g和0.106 cm3/g。Mn3+和Mn4+共存于两种催化剂上,而Ce4+ 和Ce3+共存并使Mn-Ce/CAN上Mn4+比例略微增加,导致催化剂表现出最好的脱硝性能.