Effect of annealing temperature on magnetic property of Si1 − xCrx thin films

Polycrystalline Si_1 − xCr_x thin films have been prepared by magnetron sputtering followed by rapid thermal annealing (RTA) for crystallization. RTA was performed at 800 °C for 5 min, 1200 °C for 30 s and 1200 °C for 2 min, in a N₂ flow. The magnetic hysteresis loops were observed at room temperature in all the samples except for RTA at 800 °C for 5 min, and the annealing caused the decrease of saturation magnetization relative to the as-grown film. X-ray diffraction spectra and Raman spectra showed that the annealing process lead the deposited amorphous film to be crystallized and CrSi₂ phase formed. The magnetism of the films was determined by the competition between crystallinity and precipitation of diamagnetic CrSi₂ phase.     

High-frequency magneto-electrical properties of Zn1 − x − yAlxCoyO thin films

The Al doping effects on high-frequency magneto-electric properties of Zn_{1 − x − y}Al_xCo_yO (x = 0-10.65 at.%) thin films were systematically studied. In the current work, the Zn_{1 − x − y}Al_xCo_yO thin films were deposited by magnetron co-sputtering onto quartz substrates. The magneto-impedance spectra of the thin films were measured by an impedance analyzer. Among all the doped films studied, the thin film with 6.03 at.% Al-doping showed the highest ac conductivity and relaxation frequency. To characterize the relaxation mechanism underlying the magneto-electric properties, a Cole-Cole impedance model was applied to analyze the impedance spectra. The analyzed result showed that the magneto-impedance of the Zn_{1 − x − y}Al_xCo_yO is contributed by multiple processes of magnetization dynamics and dielectric relaxation. The results imply that Zn_{1 − x − y}Al_xCo_yO may be applicable for high-frequency magneto-electric devices.     

Characterizations of ferromagnetic Zn1−xCoxO thin films grown on Al2O3 (0001) by reactive radio-frequency magnetron sputtering coupled with post-growth annealing

High-quality ferromagnetic Zn_1−xCo_xO thin films were deposited on a sapphire (0001) substrate at 600 °C by using reactive radio-frequency magnetron sputtering coupled with post-annealing treatment for 1 h at 580 °C under an Ar atmosphere. High resolution X-ray diffraction patterns show that hexagonal wurzite crystal structures of undoped ZnO film were maintained even after Co doping up to 4.5 at.% without forming Co clusters or oxides. X-ray photoelectron spectroscopy spectra represent the energy difference of 15.42 eV between Co2p_3/2 and Co2p_1/2, which is different from 15.05 eV of Co clusters. The characteristic absorption bands near 658, 616, and 568 nm wavelengths out of UV-VIS-IR spectroscopy spectra are correlated with the d-d transitions of tetrahedrally coordinated Co²⁺ ions. The low temperature photoluminescence spectrum for undoped ZnO shows a strong near-band edge (NBE) emission peak of 3.42 eV without deep level emission peaks. But, Co content increases in Zn_1−xCo_xO film, the NBE emission peak intensity decreases and another emission peak at 3.37 eV as well as a broad green emission peak at around 2.5 eV starts to appear with larger intensity due to the more actively creating oxygen vacancies. The emission peak at 3.37 eV proves the interaction between Co ions and the hydrogenic electrons in the impurity band and also supports the typical ferromagnetic hysteresis curves obtained by superconducting quantum interface device magnetometry at 300 K for Zn_1−xCo_xO films. High insulator characteristics are observed for as-grown Zn_1−xCo_xO films whereas it exhibits n-type characteristics with the increased carrier concentration, mobility, and resistivity after post-growth annealing. The spintronic devices could be fabricated with the utilization of Zn_1−xCo_xO films grown by the economically feasible reactive radio-frequency magnetron sputtering coupled with the post annealing treatment.     

Influence of nitrogen flow rate on the physical properties of ZrOxN1−x coatings produced by magnetron sputtering

In this work we produce ZrO_xN_1−x thin coatings and ZrYO_xN_1−x by DC reactive magnetron sputtering. In order to study the effect of nitrogen flow rates on physical and mechanical properties, the N₂/O₂ relation was changed between 0.025 and 0.2. The addition of nitrogen to the ZrO₂ and ZrO₂Y₂O₃ systems was performed to study the influence on the stabilization of the high temperature tetragonal or cubic phases of ZrO₂. X-ray diffraction (XRD) measurements were used to characterize the coating structures and to study the influence of nitrogen addition on the high temperature stabilized phases. The residual stresses were also determined by measuring the radius of curvature of the thin-coated substrates. The surface microtopography was analyzed by Atomic Force Microscopy (AFM) and the roughness was evaluated. Energy Dispersive X-ray (EDX) Spectroscopy was used to assess the thin film composition. Scanning Electron Microscopy (SEM) was used to measure the film thickness, to observe microstructure of the film cross-section and to analyze the surface morphology.     

Initial study on the structure and optical properties of Zn1−xFexO films

Zn_1−xFe_xO (x = 0, 0.052, 0.103, 0.157 and 0.212) films were prepared by the radio-frequency magnetron sputtering technique on Si (111) substrates and the microstructure of which was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The samples had a preferential c-axis orientation and the position of (002) diffraction peak shifted to the lower degree side with increasing Fe component. In order to investigate the optical transmittance properties of Zn_1−xFe_xO films, we prepared the films on Al₂O₃ (001) substrates simultaneity and the UV-VIS optical transmittance spectra showed that the band gap energy of Zn_1−xFe_xO films decreased with increase of Fe concentration. Photoluminescence spectra of the samples were observed at room temperature.     

Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Direct current magnetron sputtering was used to produce AlN_xO_y thin films, using an aluminum target, argon and a mixture of N₂ + O₂ (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN_x and AlO_y systems, prepared in similar conditions.     

磁控溅射ITO薄膜的退火处理

采用直流磁控溅射方法在室温下玻璃基板上制备ITO(Indium tin oxide)薄膜,并在真空中不同温度(100℃~400℃)下退火处理.研究了退火对薄膜表面形貌、电光特性的影响.XRD测试发现薄膜在200℃退火后结晶,优选晶向为(222).随退火温度升高,方块电阻迅速下降,表面更加平整,薄膜在可见光范围平均透过率提高到85%.     

Structural analysis of amorphous Si films prepared by magnetron sputtering

A study is presented on the structural changes occurring in thin amorphous silicon (a-Si) during thermal treatments. The a-Si films were deposited on single-crystalline Si substrates held at room temperature by magnetron sputtering of a Si target in pure Ar atmosphere, and therefore the films were hydrogen-free. All samples were annealed in vacuum and subsequently studied by electron paramagnetic resonance (EPR) and grazing incidence X-ray diffraction (GIXRD). A slight increase in the dangling bonds content at lower annealing temperatures, and then a strong increase of it at around 650 °C, suggested significant structural changes. The samples were also studied by grazing incidence small-angle X-ray scattering (GISAXS) which confirmed changes at the nanometric scale attributed to voids in the material. A nice correlation of the results of the three techniques shows advantages of this approach in the analysis of structural changes in a-Si material.     

Intrinsic room temperature ferromagnetism in Zn0.92Co0.08O thin films prepared by pulsed laser deposition

Zn_0.92Co_0.08O thin films were fabricated on p-type Si (100) and quartz substrates by pulsed laser deposition using a ZnCoO ceramic target. The structural and magnetic properties of the films were characterized by field emission scan electronic microscopy, x-ray diffraction, x-ray photoemission spectroscopy, UV-visible transmission spectra, extended x-ray absorption fine structure spectroscopy and physical property measurement system. Substitutional doping of Co²⁺ in ZnO lattice is demonstrated in the films. The as-deposited Zn_0.92Co_0.08O thin film displayed intrinsic room temperature ferromagnetism with saturation magnetization (M_s) of ~ 0.20μ_B/Co. The corresponding M_s increased to ~ 0.23μ_B/Co when annealed in vacuum and further to ~ 0.42μ_B/Co after annealed in hydrogen. In turn, the M_s dropped to the value of ~ 0.13μ_B/Co after annealed in oxygen. Our studies indicate that oxygen vacancy density plays a key role in mediating the ferromagnetism of the diluted magnetic semiconductor films.     

Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering

In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52 ± 1 °C was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350 nm.     

The effect of sputtering power on the structure and photocatalytic activity of TiO2 films prepared by magnetron sputtering

TiO₂ films were fabricated by direct current reactive magnetron sputtering. The effect of the sputtering power on the film structures, morphologies, and properties was investigated in detail. It is found that the concentration of oxygen impurities increased with increasing sputtering power accompanied by the bandgap (E_g) narrowing and broadening of photoluminescence (PL) peaks. The oxygen impurities were found to mainly play the role of recombination centers, leading to the decrease of photocatalytic activity. Furthermore, the photoconductivity to dark conductivity ratio could be used to evaluate and even predict photocatalytic activity to some extent.     

Fractal growth of Fe-N thin films prepared by magnetron sputtering at elevated temperature

Fe-N thin films were prepared by direction-current magnetron sputtering with different process parameters. The surface morphology and fractal dimension of the films have been studied using atomic force microscopy and small angle X-ray scattering techniques. The results indicate that the surfaces of thin films exhibit an obviously self-affine fractal characteristic, and the fractal dimension is greatly affected by the N₂/Ar flow rate ratio. When the N₂/Ar flow rate ratio is less than 1/6, the film growth follows the KPZ growth model. Contrarily, the growth mechanism of the film is agreement with the DLCA model.     

Photoluminescence of Eu-doped TiO2 thin films prepared by low pressure hot target magnetron sputtering

In this work Eu-doped TiO₂ thin films prepared by reactive magnetron co-sputtering of Ti-Eu metallic target have been studied. The results of photoluminescence (PL) and its correlation with microstructure have been described. Structural properties were examined by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD studies have shown that thin films consisted of TiO₂-anatase and AFM images display their high quality and dense nanocrystalline structure. PL spectra, measured at room temperature, show a dominating strong red luminescence corresponding to ⁵D₀-⁷F₂ transition at ∼ 617 nm and ∼ 623 nm. The evolution of photoluminescence and microstructure of the thin films has been examined as they were additionally annealed in an air ambient.     

Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering

The DC discharge of a planar magnetron was enhanced by twinned microwave electron cyclotron resonance plasma source. The magnetic cusp geometry formed in the processing chamber was used for plasma confinement. The sputtering discharge characteristics was investigated and a combined mode of voltage and current was observed at a pressure as low as 0.007 Pa. Carbon nitride thin films were synthesized using this method. Characterization of the films showed that the deposition rate was high, and the films were composed of a single amorphous carbon nitride phase with N/C ratio close to that of C₃N₄, with the bonding mainly of C---N type.     

Spectroscopic study of Zn1−xCoxO thin films showing intrinsic ferromagnetism

Dilute magnetic semiconductors are widely studied due to their potential applications in spin-resolved electronics. We report the direct evidences of intrinsic ferromagnetism in the primarily ferromagnetic ZnO:Co thin films using near-edge X-ray absorption fine structure (NEXAFS) and soft X-ray magnetic circular dichroism (XMCD). The single phase Zn_1−xCo_xO thin films with nominal compositions (0.00 ≤ x ≤ 0.15) were synthesized by a spray pyrolysis technique, which exhibit room temperature ferromagnetism as revealed by alternating gradient force magnetometer (AGFM) measurements. The spectroscopic measurements indicate that most of Co dopants have substituted for Zn sites in ZnO matrix and they are present in divalent Co²⁺ (d⁷) state with tetrahedral symmetry according to the atomic multiplet calculations. The O 1s NEXAFS spectra suggest strong hybridization between O 2p and Co 3d electrons within ZnO matrix. The Co 2p XMCD measurements rule out the magnetism due to the presence of Co clusters, and show that Co–O–Co bonding provides localized magnetic moments leading to ferromagnetism.     

Effect of crystallization quality on ferromagnetism in Zn1 − xCoxO nanopowders

In this paper, a series of Zn_1 − xCo_xO nanocrystals with different cobalt percentages were fabricated by a simple chemical method, which were intensively explored for spintronics applications. X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectrophotometer, transmission electron microscope (TEM) and vibrating sample magnetometer (VSM) were used to characterize the structures and magnetic properties of prepared samples. It was concluded that Co²⁺ was well inserted into ZnO wurtzite structure. The ferromagnetism of Zn_1 − xCo_xO nanopowders was observed at room temperature. The relation between crystallization quality and magnetism of Zn_1 − xCo_xO nanopowders was discussed in detail. It was demonstrated the crystallization quality of Zn_1 − xCo_xO nanocrystals had a strong effect on the ferromagnetism.     

Microstructure of Co2CrxFe1−xAl thin films for magneto-electronic applications

Thin films of the Heusler alloy Co₂Cr_0.6Fe_0.4Al have been prepared by means of magnetron sputtering under varying conditions (sputter power, sputter pressure and substrate temperature). All the films are polycrystalline with the cubic B2 structure. The extent of Co-Al antisite defects, lattice constants, internal stress states are influenced by the sputter conditions which is related to differences in the saturation magnetization. The magnetic moment can be increased by additional annealing up to an optimum temperature of 400 °C, but does not reach the theoretically predicted value. Above 600 °C the metastable B2 phase transforms into either (ε)-Co/Cr or (α)-Co/Cr.     

Electrical and optical properties of nanostructured VOX thin films prepared by direct current magnetron reactive sputtering and post-annealing in oxygen

Nanostructured vanadium oxide (nano-VO_X) thin films were prepared by direct current magnetron reactive sputtering in mixed O₂/Ar discharges and subsequent annealing in oxygen atmosphere. X-ray diffraction and field emission scanning electron microscope were employed to characterize the crystal structures and morphologies, respectively. Fourier transform infrared spectroscopy was applied to analyze the vanadium-oxygen bonds of films. X-ray photoelectron spectroscopy revealed the compositions of the surface and inner portion of nano-VO_X thin films. It was shown that the as-deposited films were amorphous, and in-situ annealing of these films in ambient oxygen for 10 min can lead to the growth of nano-VO_X thin films. Results of electrical studies indicated that the absolute values of temperature coefficient of resistance and activation energy of films increased significantly after oxygen annealing. Optical investigations carried out in the UV-visible range showed that the absorption edges of nano-VO_X films exhibited large red shifts compared with as-deposited film, and that dual optical absorptions were observed in nano-VO_X films.     

Self-buffered BaxSr1−xTiO3 films by sol-gel and RF magnetron sputtering method

Ba_xSr_1−xTiO₃ (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an ‘expanded layer thickness model’ and an unstable crystallized surface, respectively. The obtained (dε/ε) dT is up to 6% around 11 °C by the sol-gel method.     

Structures and properties of the Al-doped ZnO thin films prepared by radio frequency magnetron sputtering

Al-doped ZnO thin films were deposited by radio frequency magnetron sputtering using a ZnO target with 2 wt.% Al₂O₃. The structures and properties of the films were characterized by the thin film X-ray diffraction, high resolution transmission electron microscopy, Hall system and ultraviolet/visible/near-infrared spectrophotometer. The Al-doped ZnO film with high crystalline quality and good properties was obtained at the sputtering power of 100 W, working pressure of 0.3 Pa and substrate temperature of 250 °C. The results of further structure analysis show that the interplanar spacings d are enlarged in other directions besides the direction perpendicular to the substrate. Apart from the film stress, the doping concentration and the doping site of Al play an important role in the variation of lattice parameters. When the doping concentration of Al is more than 1.5 wt.%, part of Al atoms are incorporated in the interstitial site, which leads to the increase of lattice parameters. This viewpoint is also proved by the first principle calculations.