沉积压力对磁控溅射Mg薄膜结构的影响

采用直流磁控溅射方法在氧化锆固体电解质表面制备了Mg金属薄膜,利用XRD和SEM研究了沉积压力（0.9～2.1 Pa）对薄膜形貌和结构的影响.结果表明：随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸减小,表面粗糙度增大;薄膜呈（002）择优生长的柱状晶结构,且随着沉积压力的提高薄膜厚度先增加后减小.     

Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

1Introduction Indiumtinoxide(ITO)isadegeneraten typesemi conductingmaterialthathaswideapplicationsinoptics andoptoelectronics,suchasflatpaneldisplaydevices,antireflectioncoatings,pilotwindows,andheterojunction solarcells.Itselectricalopticalpropertieshave…     

磁控溅射CdTe薄膜的光电学特性

采用射频磁控溅射方法在玻璃和Si(111)衬底上制备了碲化镉(CdTe)薄膜,并研究了溅射功率对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明,所有样品均沿(111)面择优取向; 平均晶粒尺寸随溅射功率的增加而增加,即从73.0 nm(70 W)增加到123.6 nm(110 W).紫外 - 可见 - 近红外光谱分析表明, CdTe薄膜在可见光范围内具有较高的吸光度; 薄膜的带隙随着溅射功率的增加而减小,最小值为1.38 eV.CdTe薄膜的导电性随溅射功率的增加而明显增强,当溅射功率为110 W时电阻率仅为21.5 Ω?cm.该研究结果可为制备高导电性和高吸收率的半导体薄膜提供参考.     

Preparation and characterization of transparent conductive zinc doped tin oxide thin films prepared by radio-frequency magnetron sputtering

High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

磁控溅射薄膜沉积速率的研究

沉积速率是影响薄膜性能的重要参数,直接影响着薄膜质量的优劣.本文采用磁控溅射方法,在玻璃基底上沉积钛膜.通过对比研究了平衡磁控溅射和非平衡磁控溅射两种工作模式下,靶基距、氩气流量等工艺参数对沉积速率的影响,同时测试了非平衡磁控溅射线圈励磁电流大小变化对薄膜沉积速率的影响.结果表明：磁控溅射源以非平衡模式工作时,线圈励磁电流在60～180 A范围内,沉积速率随励磁电流的调整而变化;磁控溅射薄膜沉积速率随靶基距的增大而下降;相同工艺条件下,非平衡模式下薄膜沉积速率高于平衡模式,且更易受到氩气流量变化的影响.     

射频磁控溅射制备的ZnMgO薄膜结构和光学性能

采用射频磁控溅射法,在石英衬底上制备了Zn1-xMgxO(x=0.00～0.16)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱等分析了薄膜的结构、形貌和光学特性。结果表明:当x≤0.10时薄膜保持六角纤锌矿结构,而x=0.16时已出现MgO立方相;所有薄膜晶粒大小均匀,在100～150 nm之间;透光率在80%以上;薄膜带隙Eg与Mg含量呈线性关系;薄膜PL谱由较弱的紫外发光峰和较强的可见发光带组成,随Mg含量的增加紫外发光峰蓝移。     

Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

ZnO thin films were prepared by direct current（DC） reactive magnetron sputtering under different oxygen partial pressures And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy（Vo）, zinc vacancy（VZn）, antisite oxygen（OZn）, antisite zinc（Zno）, interstitial oxygen（Oi） and interstitial zinc（Zni） were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.     

磁控溅射法制备的不同衬底上的TiO_2薄膜

利用射频磁控溅射方法,分别在改变氧气含量和沉积时间的条件下在ITO玻璃、Si和Al/ITO玻璃衬底上沉积了TiO2薄膜,并利用拉曼光谱表征了2种条件下的TiO2薄膜的结构.研究表明：衬底材料、氧气含量以及沉积时间明显地影响了TiO2薄膜的结构.随着氧气含量的降低,沉积在ITO玻璃衬底上的TiO2薄膜由锐钛矿和金红石的混合结构转变为单一的金红石结构,而沉积在Si衬底上的TiO2薄膜的结构没有改变,并保持单一的金红石结构;随着沉积时间的增加,Al/ITO玻璃衬底上的TiO2薄膜由金红石结构转变为锐钛矿结构.     

溅射条件对SiO2膜力学特性的影响

介绍了在不锈钢衬底和Ｎｉ－Ｃｒ应变电阻间ＳｉＯ２薄膜的制做方法，在不宜用热氧化和ＣＶＤ法制做ＳｉＯ２膜的情况下，利用该法是行之有效的．探讨了溅射工艺条件对膜附着力和应力的影响，并指出了制备具有较好附着力和较低应力的方法．     

Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods.Unbalanced magnetron sputtering,by producing dense secondary plasma around the substrate,provides a high ion current density.The closed-field unbalanced magnetron sputtering system (CFUBMS) has been established as a versatile technique for high-rate deposition high-quality metal,alloy,and ceramic thin films.The key factor in the CFUBMS system is the ability to transport high ion currents to the substrate,which can enhance the formation of full dense coatings at relatively low value homologous temperature.The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes.Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.     

Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained. Supported by the National Natural Science Foundation of China (Grant Nos. 50772006, 10432050)     

热退火对氧化镓薄膜性质的影响

采用真空蒸发技术在蓝宝石衬底上制备了氧化镓透明半导体薄膜;研究了热退火对氧化镓薄膜结构、电学和光学等特性的影响.在退火前,氧化镓薄膜是一种无定型的、高阻薄膜.经过退火后转变成多晶薄膜,但薄膜的电学特性变化较小.随着退火温度的升高,氧化镓薄膜逐渐形成了(401)择优取向,薄膜的光学带隙也随之变大,在750℃退火时得到了最大的光学带隙为4.79eV.     

Er／Yb／Al掺杂ZnO薄膜的结构与形貌研究

采用射频磁控溅射技术在室温下Si衬底上制备了ZnO薄膜和Er／Yb／Al掺杂的ZnO薄膜。通过对XRD的结构分析表明：未掺杂ZnO薄膜沿c取向性生长,掺杂ZnO薄膜偏离了正常生长,变为（102）取向性生长的纳米多晶结构;Er／Yb／Al掺杂的ZnO薄膜的晶粒尺寸随着Er元素含量的增多而减小。经AFM对其形貌分析表明：Er^3＋、Yb^3＋、Al^3＋的掺入引起了ZnO薄膜晶格场变化,使薄膜表面粗糙度变大。     

溅射时间对CIGS薄膜的结构及性能影响

选择铜铟镓硒(CIGS)四元合金靶材,采用一步磁控溅射法在钠钙硅玻璃衬底上制备CIGS薄膜。重点研究了溅射时间对CIGS薄膜结构及性能的影响。采用XRD、SEM、UV-Vis及四探针测试仪对薄膜进行表征。结果表明,随着溅射时间的增加,薄膜增厚,薄膜的结晶度变好,颗粒增大尺寸约1mm,电阻率明显降低,可见光的吸收系数接近105 cm-1。CIGS吸收层的性能对改善CIGS薄膜光伏电池的光转换效率非常有利。     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

不同磁控溅射模式膜厚均匀性研究

使用磁控溅射和非平衡磁控溅射方法，在玻璃基底上沉积钛膜。实验了在同等工艺条件下平衡和非平衡两种不同的工作模式对膜厚均匀性的影响。结果表明，靶基距是影响磁控溅射薄膜厚度均匀性的重要工艺参数，在一定范围内，随着靶基距的增大，膜厚分布均匀性有提高的趋势；磁场分布是影响两种磁控溅射膜厚分布差异的主要因素；非平衡磁控溅射膜厚均匀性随附加励磁线圈电流改变而变化。     

磁控溅射沉积氮化铝薄膜中等离子体光谱研究

薄膜材料由于其优异的性能，应用日益广泛．薄膜生长过程的在线检测具有重要意义．为了研究等离子体发射光谱强度与气体流量的关系，对薄膜生长过程进行在线检测；应用等离子体发射监测仪（Plasma Emission Monitor）采集反应磁控溅射真空室中等离子体的发射光谱．对氮化铝薄膜沉积过程中等离子体发射光谱进行分析，结果显示氮的谱线强度和铝的谱线强度随着氮气流量的增大都有明显而且相同的转变点．通过理论模拟分析，得出以下结论：反应粒子光谱强度的转变反映了溅射模式转变点，并且通过直线拟合的方法找到转变点．实验结果与理论模拟分析取得了一致结果．     

The effect of working gas pressure and deposition power on the properties of molybdenum films deposited by DC magnetron sputtering

Molybdenum films were deposited on Corning 7059 glass substrates by DC magnetron sputtering with different working gas pressures and sputtering powers.The structure and morphology,residual stress and adhesion,resistivity and optical reflectance of the as-deposited Mo films were investigated.The results show that Mo films deposited with high working gas pressure and low sputtering power have a spherical surface morphology,small grain size,residual compressive stress and a good adhesion,high resistivity and low optical reflectance.With the working gas pressure decreased and the sputtering power increased,Mo films have elongated spindle-shape or diamond flake shape surface morphology,the grain size is increased,with residual stress changed from tensile to compressive,a poor adhesion,resistivity decreased and optical reflectance increased.