Improving specific stiffness of silicon carbide ceramics by adding boron carbide

A strategy for improving the specific stiffness of silicon carbide (SiC) ceramics by adding B₄C was developed. The addition of B₄C is effective because (1) the mass density of B₄C is lower than that of SiC, (2) its Young’s modulus is higher than that of SiC, and (3) B₄C is an effective additive for sintering SiC ceramics. Specifically, the specific stiffness of SiC ceramics increased from ~142 × 10⁶ m²?s^?2 to ~153 × 10⁶ m²?s^?2 when the B₄C content was increased from 0.7 wt% to 25 wt%. The strength of the SiC ceramics was maximal with the incorporation of 10 wt% B₄C (755 MPa), and the thermal conductivity decreased linearly from ~183 to ~81 W?m^?1?K^?1 when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 25 wt% B₄C were ~690 MPa and ~95 W?m^?1?K^?1, respectively.     

Pressureless sintering of fully ceramic microencapsulated fuels

A new strategy was introduced to achieve high volume fraction of tristructural isotropic (TRISO) particles (> 35 vol%) in fully ceramic microencapsulated (FCM) fuels. The proposed strategy requires (1) applying a controlled coating of a SiC matrix on the TRISO particles, (2) forming the coated TRISO particles using cold isostatic pressing, and (3) sintering the formed sample without applied pressure. The strategy was very effective for preventing both the rupture of TRISO particles and matrix cracking during sintering. The thinner the coating layer, the higher the volume fraction of the TRISO particles obtained in the FCM pellets. However, when the coating thickness was extremely thin (≤ 133 μm), radial cracks were observed near the TRISO particles in the SiC matrix after sintering. The maximum TRISO volume fraction (∼35.3 %) was obtained when the coating thickness was ∼215 μm and the TRISO pellets had no cracks in the SiC matrix.     

Pressureless sintering of high-entropy boride ceramics

High-entropy boride ceramics were densified by pressureless sintering. Green densities of the ceramics varied by composition with the highest green density of 53.6 % for (Hf, Nb, Ta, Ti, Zr)B₂. After pressureless sintering, relative densities up to ∼100 % were obtained for (Cr, Hf, Ta, Ti, Zr)B₂ and (Hf, Ta, Ti, V, Zr)B₂. Two compositions, (Hf, Ta, Ti, W, Zr)B₂ and (Hf, Mo, Ti, W, Zr)B₂ contained secondary phases and did not reach full density. All compositions had average grain sizes less than 10 µm and less than 2 vol % of residual B₄C. This is the first report of conventional pressureless sintering of high-entropy boride ceramics powder compacts without evidence of liquid phase formation.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Pressureless sintering of boron carbide with Cr3C2 as sintering additive

In this study, chromium carbide (Cr₃C₂) was selected as the sintering additive for the densification of boron carbide (B₄C). Cr₃C₂ can react with B₄C and form graphite and CrB₂ in situ, which is considered to be effective for the sintering of B₄C composites. The sintering behavior, microstructure development and mechanical properties of B₄C composites were studied. The density of B₄C composite increased with the increase of Cr₃C₂ content and sintering temperature. The formation of liquid phase could effectively improve the densification of B₄C composites. The abnormal grains began to appear at 2080 °C. The bending strength could reach 440 MPa for the 25 wt% and 30 wt% Cr₃C₂ samples after sintering at 2070 °C.     

Pressureless sintering of binderless tungsten carbide

The aim of this study was to produce dense, single phase polycrystals. The research was carried out on the submicron tungsten carbide powder without additives, with either a carbon or tungsten additive and on the powder with both additives. The primary task of carbon was to reduce surface oxide impurities which passivate WC grains; tungsten in turn bounds free carbon in the WC. The authors manufactured fine-grained, dense (96–98% T.D.) and single-phase WC polycrystals, using the technique of pressureless sintering at the temperature not exceeding 2000 °C. A positive effect of carbon addition on tungsten carbide sinterability was observed, whereby a dense, fine-grained polycrystals can be obtained at 1900 °C. It was also observed that a significant excess of temperature of sintering process resulted in a strong abnormal grain growth of WC grains.     

Pressureless sintering of titanium carbide doped with boron or boron carbide

Titanium carbide ceramics with different contents of boron or B₄C were pressureless sintered at temperatures from 2100 °C to 2300 °C. Due to the removal of oxide impurities, the onset temperature for TiC grain growth was lowered to 2100 °C and near fully dense (>98%) TiC ceramics were obtained at 2200 °C. TiB₂ platelets and graphite flakes were formed during sintering process. They retard TiC grains from fast growth and reduced the entrapped pores in TiC grains. Therefore, TiC doped with boron or B₄C could achieve higher relative density (>99.5%) than pure TiC (96.67%) at 2300 °C. Mechanical properties including Vickers’ hardness, fracture toughness and flexural strength were investigated. Highest fracture toughness (4.79 ± 0.50 MPa m^1/2) and flexural strength (552.6 ± 23.1 MPa) have been obtained when TiC mixed with B₄C by the mass ratio of 100:5.11. The main toughening mechanisms include crack deflection and pull-out of TiB₂ platelets.     

Pressureless sintered Al4SiC4 ceramics with Y2O3 addition

Highly densified Al₄SiC₄ ceramics with a relative density of 96.1% were prepared by pressureless sintering using 2 wt% Y₂O₃ as additives. The densification mechanism, phase composition, microstructures and mechanical properties of Al₄SiC₄ ceramics were investigated. Y₂O₃ in-situ reacted with the oxygen impurities in Al₄SiC₄ powder to form a yttrium aluminate liquid phase during sintering, which promoted the densification and anisotropic grain growth. The final Al₄SiC₄ ceramics were composed of equiaxed grains and columnar grains, and presented a bimodal grain distribution. The mechanical properties of the pressureless sintered Al₄SiC₄ ceramics were better than those reported for hot pressed Al₄SiC₄, including a flexural strength of 369 ± 24 MPa, fracture toughness of 4.8 ± 0.1 MPa m^1/2 and Vickers hardness of 11.3 ± 0.2 GPa. Pressureless sintering of Al₄SiC₄ ceramics is of great significance for the development and practical application of Al₄SiC₄ ceramic parts, especially with big size and complex shape.     

Spark plasma sintering of TiN ceramics codoped with SiC and CNT

In this research, we investigated the effects of SiC and multi-walled carbon nanotube (MWCNTs) addition on the densification and microstructure of titanium nitride (TiN) ceramics. Four samples including monolithic TiN, TiN-5?wt% MWCNTs, TiN-20?vol% SiC and TiN-20?vol% SiC-5?wt% MWCNTs were prepared by spark plasma sintering at 1900?°C for 7?min under 40?MPa pressure. X-ray powder diffraction patterns and scanning electron microscope (SEM) micrographs of the prepared ceramics showed that no new phase was formed during the sintering process. The highest calculated relative density was related to the TiN ceramic doped with 20?vol% SiC, while the sample doped with 5?wt% MWCNTs presented the lowest density. In addition, the SEM investigations revealed that the addition of sintering aids e.g. SiC and MWCNTs leads to a finer microstructure ceramic. These additives generally remain within the spaces among the TiN particles and prohibit extensive grain growth in the fabricated ceramics.     

Enhancing toughness and strength of SiC ceramics with reduced graphene oxide by HP sintering

In this paper, the silicon carbide-reduced graphene oxide (SiC/rGO) composites with different content of rGO are investigated. The hot pressing (HP) at 2100?°C for 60?min under a uniaxial pressure of 40?M?Pa resulted in a near fully-dense SiC/rGO composite. In addition, the influence of graphene reinforcement on the sintering process, microstructure, and mechanical properties (fracture toughness, bending strength, and Vickers hardness) of SiC/rGO composites is discussed. The fracture toughness of SiC/rGO composites (7.9MPam^1/2) was strongly enhanced by incorporating rGO into the SiC matrix, which was 97% higher than the solid-state sintering SiC ceramics (SSiC) by HP. Meanwhile, the bending strength of the composites reached 625?M?Pa, which was 17.3% higher than the reference materials (SSiC). The microstructure of the composites revealed that SiC grains were isolated by rGO platelets, which lead to the toughening of the composite through rGO pull out/debonding and crack bridging mechanisms.     

The effect of transition metal carbides MeC (Me = Ti,Zr, Nb,Ta, and W) on mechanical properties of B4C ceramics fabricated via pressureless sintering

In this study, boron carbide-metallic boride (B₄C-MeB_x, Me = Ti, Zr, Nb, Ta, or W) multiphase ceramics were fabricated via in situ pressureless sintering at 2250 °C for 1 h. The effects of transition metal carbides, namely, TiC, ZrC, NbC, TaC, and WC, on the phase composition, microstructure, and mechanical properties of the ceramics were investigated. The results showed that MeC could facilitate the sintering densification of B₄C by distributing second-phase particles uniformly throughout the B₄C. Additionally, the main phases observed were B₄C and (Me, W)B_x (Me = Ti, Zr, Nb, or Ta) due to the doping of a small amount of WC during the ball milling process. As a result, the mechanical properties of B₄C-MeB_x showed significant improvements when compared with those of single-phase B₄C ceramics. B₄C–NbB₂ ceramics were found to exhibit the best mechanical properties, with an elastic modulus of 393.0 GPa, a hardness of 28.7 GPa, a flexural strength of 368.0 MPa, and a fracture toughness of 6.94 MPa m^1/2.     

Pressureless sintering of highly transparent aluminum oxynitride ceramic by precipitation-coating with sintering aid

AlON transparent ceramic is an ideal material for photoelectric windows, domes, and transparent armor. This ceramic is commonly fabricated by ball-mill mixing of AlON powder with appropriate sintering aids; however, it is difficult to homogeneously disperse trace sintering aids using this method and contamination is easily introduced, which may generate pores and flaws in the ceramic, resulting in degraded properties. To address this problem, we adopted a wet-chemical method to precipitation-coat sintering aids on the surface of AlON powder to achieve homogeneous distribution and enable nano-size sintering aids. Pressureless sintered AlON with 0.5 mass% Y₂O₃-coating gave in-line transmittance of 83.5% at a wavelength of 1064 nm and flexural strength of 326.3 MPa; the corresponding values for the ball-milled product were 79.3% and 304.6 MPa. Our results demonstrate that this method of sintering-aid coating has potential to fabricate AlON ceramic with excellent performance.     

Effect of zirconia addition on pressureless sintering of boron carbide

This paper presents the results of experiments on pressureless sintering of boron carbide with varying addition of zirconia (ZrO₂: 0–30 wt.%). Green pellets were densified by sintering at 2275 °C in vacuum for 60 min and characterized by measurement of density, hardness, thermal conductivity and microstructure. Samples prepared with the addition of ≥5 wt.% ZrO₂ showed higher densities in the range of 93–96% ρth, compared to 86.63% ρth for boron carbide only. Addition of ZrO₂ was found to increase the hardness of sintered samples and regardless of ZrO₂ content, the hardness values ranged between 30 and 31.5 GPa. XRD of the sintered pellets showed the presence of ZrB₂. Optical microscope as well as electron probe microanalysis (EPMA) showed the presence of two phases, grey matrix with white precipitates. EPMA analysis of second phase revealed the presence of Zirconium in this phase. Fractography of boron carbide with 25% ZrO₂ showed the failure to be by mixed fracture (transgranular and intergranular). Thermal conductivity values of the samples measured in the temperature range of 400–1000 °C were marginally higher with the addition of ZrO₂.     

Pressureless sintering of single-phase tantalum carbide and niobium carbide

This work presents the results of studies on the preparation of single-phase polycrystalline tantalum carbide and niobium carbide. It has been found that it is possible to obtain polycrystals with high density in the pressureless sintering process at temperatures up to 2000 °C and therefore relatively low temperatures such as for the compounds with one of the highest melting points; TaC – 3985 °C and NbC – 3600 °C. Only carbon as a sintering additive was used. The main role of carbon is to reduce of oxide contamination. It has been shown that the determination of the amount of carbon required to reduce oxide contamination is only possible through the experimental method.     

Improved mechanical strength and thermal resistance of porous SiC ceramics with gradient pore sizes

Thermal insulation applications of porous SiC ceramics require low thermal conductivity and high mechanical strength. However, low thermal conductivity and high mechanical strength possess a trade-off relationship, because improving the mechanical strength requires decreasing the porosity, which increases the thermal conductivity. In this study, we established a new strategy for improving both the mechanical strengths and thermal resistances of porous SiC ceramics with micron-sized pores by applying a double-layer coating with successively decreasing pore sizes (submicron- and nano-sized pores). This resulted in a unique gradient pore structure. The double-layer coating increased the flexural strengths and decreased the thermal conductivities of the porous SiC ceramics by 24–70 % and 29–49 % depending on the porosity (48–62 %), improving both their mechanical strengths and thermal resistances. This strategy may be applicable to other porous ceramics for thermal insulation applications.     

Effects of SiC whiskers on the mechanical properties and microstructure of SiC ceramics by reactive sintering

As-received and pre-coated SiC whiskers (SiC_w)/SiC ceramics were prepared by phenolic resin molding and reaction sintering at 1650 °C. The influence of SiC_w on the mechanical behaviors and morphology of the toughened reaction-bonded silicon carbide (RBSC) ceramics was evaluated. The fracture toughness of the composites reinforced with pre-coated SiC_w reached a peak value of 5.6 MPa m^1/2 at 15 wt% whiskers, which is higher than that of the RBSC with as-received SiC_w (fracture toughness of 3.4 MPa m^1/2). The surface of the whiskers was pre-coated with phenolic resin, which could form a SiC coating in situ after carbonization and reactive infiltration sintering. The coating not only protected the SiC whiskers from degradation but also provided moderate interfacial bonding, which is beneficial for whisker pull-out, whisker bridging and crack deflection.     

Effects of porosity on electrical and thermal conductivities of porous SiC ceramics

The effects of porosity on the electrical and thermal conductivities of porous SiC ceramics, containing Y₂O₃–AlN additives, were investigated. The porosity of the porous SiC ceramic could be controlled in the range of 28–64 % by adjusting the sacrificial template (polymer microbead) content (0–30 wt%) and sintering temperature (1800–2000 °C). Both electrical and thermal conductivities of the porous SiC ceramics decreased, from 7.7 to 1.7 Ω⁻¹ cm⁻¹ and from 37.9 to 5.8 W/(m·K), respectively, with the increase in porosity from 30 to 63 %. The porous SiC ceramic with a coarser microstructure exhibited higher electrical and thermal conductivities than those of the ceramic with a finer microstructure at the equivalent porosity because of the smaller number of grain boundaries per unit volume. The decoupling of the electrical conductivity from the thermal conductivity was possible to some extent by adjusting the sintering temperature, i.e., microstructure, of the porous SiC ceramic.     

Influence of sintering atmosphere and BN additives on microstructure and properties of porous SiC ceramics

The effects of the boron nitride (BN) content on the electrical, thermal, and mechanical properties of porous SiC ceramics were investigated in N₂ and Ar atmospheres. The electrical resistivity was predominantly controlled by the sintering atmosphere and secondarily by the BN concentration, whereas the thermal conductivity and flexural strength were more susceptible to changes in the porosity and necking area between the SiC grains. The electrical resistivities of argon-sintered porous SiC ceramics (6.3 × 10⁵ – 1.6 × 10⁶ Ω·cm) were seven orders of magnitude higher than those of nitrogen-sintered porous SiC ceramics (1.5 × 10⁻¹ – 6.0 × 10⁻¹ Ω·cm). The thermal conductivity and flexural strength of the argon-sintered porous SiC ceramics increased from 8.4–11.6 W·m⁻¹ K⁻¹ and from 9.3–28.2 MPa, respectively, with an increase in the BN content from 0 to 1.5 vol%, which was attributed to the increase in necking area and the decrease in porosity.     

Low-temperature reactive spark plasma sintering of dense SiC-Ti3SiC2 ceramics

SiC-based ceramics are of great interest for various advanced applications. However, its fabrication requires high-temperature treatment at ～2000 – 2100 °С. In this study, we developed an approach based on low-temperature reactive spark plasma sintering to produce dense SiC-based ceramics with superior mechanical properties. It was found that an SPS temperature of 1600 °C and introduction of 10 – 15 wt% of mechanically activated non-oxide Ti–Si–C additive is required to manufacture ceramics with a theoretical density of higher than 90%. Nonetheless, employing 5 – 15 wt% of the additive mixture and an SPS temperature of 1700 °C, the maximum density of ～ 98% was achieved. The controlled formation and decomposition of the in-situ Ti₃SiC₂ MAX phase enables the fabrication of the engineering ceramics with enhanced compressive strength (550 MPa), elastic modulus (485 GPa), and microhardness (32 GPa), which are comparable to the best-reported SiC ceramics. The study has a significant potential for practical application in the production of advanced SiC-based ceramics for various purposes and could be used for further understanding and development of the high-temperature sintering methods.     

Pressureless sintering and properties of boron carbide composite materials

Boron carbide and Tantalum boride composites were prepared by pressureless sintering of B₄C with addition of TaC powder. The effect of TaC addition on the sinterability of boron carbide was studied. High densified ceramic with a relative density of 98.7% was obtained at sintering temperature of 2250°C. The composition and the microstructure of the dense composites are characterized by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDX). The studies show that the composites contain boron carbide, TaB₂, and carbon phases with a homogeneous structure. In addition, the correlation between the composition and the electrical conductivity was investigated. The electrical conductivity of the composite increased with increasing addition of TaC, and a change in conduction behavior from semiconducting to metallic was observed. High hardness value of 28.49 ± 1.33 GPa was obtained by the sample with 30 wt% TaC addition.