Microstructure and properties of dense Tyranno-ZMI SiC/SiC containing Ti3Si(Al)C2 with plastic deformation toughening mechanism

In this paper, Ti₃Si(Al)C₂ was introduced into dense SiC/SiC to improve the mechanical and electromagnetic interference (EMI) shielding properties. In order to reveal the effect of Ti₃Si(Al)C₂, dense SiC/SiC-Ti₃Si(Al)C₂ and dense SiC/SiC without Ti₃Si(Al)C₂ were fabricated. Owing to the plastic deformation toughening mechanism of Ti₃Si(Al)C₂, SiC/SiC-Ti₃Si(Al)C₂ performs a new damage mode characterized by matrix/matrix (m/m) debonding. High interfacial shear strength (IFSS) due to large thermal residual stress (TRS) is weakened by m/m debonding. This new mode also brings high effective volume fraction of loading fibers and long path of crack propagation. Hence SiC/SiC-Ti₃Si(Al)C₂ exhibits higher flexural strength (503 MPa) and fracture toughness (23.7 MPa · m^1/2) than the dense SiC/SiC without Ti₃Si(Al)C₂. In addition, dense SiC/SiC-Ti₃Si(Al)C₂ shows excellent electromagnetic interference shielding effectiveness (EMI SE, 43.0 dB) in X-band, revealing great potential as thermo-structural and functional material.     

Mechanical Behavior and Electromagnetic Interference Shielding Properties of C/SiC–Ti3Si(Al)C2

In this paper, a low‐temperature densification process of Al–Si alloy infiltration was developed to fabricate C/SiC–Ti₃Si(Al)C₂, and then the microstructure, mechanical, and electromagnetic interference (EMI) shielding properties were studied compared with those of C/SiC–Ti₃SiC₂ and C/SiC–Si. The interbundle matrix of C/SiC–Ti₃Si(Al)C₂ is mainly composed of Ti₃Si(Al)C₂, which can bring various microdeformation mechanisms, high damage tolerance, and electrical conductivity, leading to the high effective volume fraction of loading fibers and electrical conductivity of C/SiC–Ti₃Si(Al)C₂. Therefore, C/SiC–Ti₃Si(Al)C₂ shows excellent bending strength of 556 MPa, fracture toughness 21.6 MPa·m^1/2, and EMI shielding effectiveness of 43.9 dB over the frequency of 8.2–12.4 GHz. Compared with C/SiC–Si and C/SiC–Ti₃SiC₂, both the improvement of mechanical properties and EMI shielding effectiveness can be obtained by the introduction of Ti₃Si(Al)C₂ into C/SiC, revealing great potential as structural and functional materials.     

Improved strength-impairing contact damage resistance of Ti3Si(Al)C2/SiC composites

The resistance of Ti₃Si(Al)C₂-based materials to strength-impairing contact damage was investigated using the Hertzian indentation method. Microstructural analysis indicated that for the three types of testing materials the contact damage was governed by multiple grain slip, crushed grains, and intergranular shear failure. No cone cracking or other macro-cracks were visible on or beneath the contact damage surfaces. Bending tests on the specimens containing single-cycle contact damage revealed that the resistance of Ti₃Si(Al)C₂ to strength degradation was significantly improved by incorporating SiC particles into the matrix. The mechanism of the improvement is ascribed to the increased shear resistance and the fact that the hard SiC particles inhibit the downward extent of the contact damage through restricting the slip and deformation of the Ti₃Si(Al)C₂ grains.     

Fabrication and electromagnetic interference shielding effectiveness of Ti3Si(Al)C2 modified Al2O3/SiC composites

A dense alumina fiber reinforced silicon carbide matrix composites (Al₂O₃/SiC) modified with Ti₃Si(Al)C₂ were prepared by a joint process of chemical vapor infiltration, slurry infiltration and reactive melt infiltration. The conductive Ti₃Si(Al)C₂ phase introduced into the matrix modified the microstructure of Al₂O₃/SiC. The refined microstructure was composed of conductive phase, semiconductive phase and insulating phase, which led to admirable electromagnetic shielding properties. Electromagnetic interference shielding effectiveness (EMI SE) of Al₂O₃/SiC and Ti₃Si(Al)C₂ modified Al₂O₃/SiC were investigated over the frequency range of 8.2–12.4 GHz. The EMI SE of Al₂O₃/SiC-Ti₃Si(Al)C₂ exhibited a significant increase from 27.6 to 42.1 dB compared with that of Al₂O₃/SiC. The reflection and absorption shielding effectiveness increased simultaneously with the increase of the electrical conductivity.     

Microstructure and tensile behavior of (BN/SiC)n coated SiC fibers and SiC/SiC minicomposites

Interphase plays an important role in the mechanical behavior of SiC/SiC ceramic-matrix composites (CMCs). In this paper, the microstructure and tensile behavior of multilayered (BN/SiC)_n coated SiC fiber and SiC/SiC minicomposites were investigated. The surface roughness of the original SiC fiber and SiC fiber deposited with multilayered (BN/SiC), (BN/SiC)₂, and (BN/SiC)₄ (BN/SiC)₈ interphase was analyzed through the scanning electronic microscope (SEM) and atomic force microscope (AFM) and X-ray diffraction (XRD) analysis. Monotonic tensile experiments were conducted for original SiC fiber, SiC fiber with different multilayered (BN/SiC)_n interfaces, and SiC/SiC minicomposites. Considering multiple damage mechanisms, e.g., matrix cracking, interface debonding, and fibers failure, a damage-based micromechanical constitutive model was developed to predict the tensile stress-strain response curves. Multiple damage parameters (e.g., matrix cracking stress, saturation matrix crack stress, tensile strength and failure strain, and composite’s tangent modulus) were used to characterize the tensile damage behavior in SiC/SiC minicomposites. Effects of multilayered interphase on the interface shear stress, fiber characteristic strength, tensile damage and fracture behavior, and strength distribution in SiC/SiC minicomposites were analyzed. The deposited multilayered (BN/SiC)_n interphase protected the SiC fiber and increased the interface shear stress, fiber characteristic strength, leading to the higher matrix cracking stress, saturation matrix cracking stress, tensile strength and fracture strain.     

Fabrication of highly dense three-layer SiC cladding tube by chemical vapor infiltration method

Three-layer silicon carbide (SiC) cladding architectures are considered to be promising materials for current light-water nuclear reactors. Herein, a novel processing approach was proposed to fabricate dense three-layer SiC tubes by introducing SiC nanowires (NWs) on the graphite rod, which resulted in change in the valley-peak structure of SiC_f tubular preform. A dense three-layer-NWs SiC cladding tube, consisting of a chemical vapor infiltration (CVI)-SiC inner layer, a CVI-SiC_f/SiC composite layer, and a CVI-SiC outer layer, was obtained through CVI process. Microstructure and hoop strength of the as-obtained three-layer-NWs SiC cladding tube were systematically investigated. By avoiding delamination of the layers and reducing the pores, the three-layer-NWs SiC cladding tube exhibited an average hoop strength of 316.6 MPa with a Weibull modulus of 11.55.     

In situ formation of SiC in Al–40Si alloy during high-pressure solidification

The in situ formation of SiC in Al–40Si alloys during the fabrication of SiC/Al–Si composites by high-pressure solidification were investigated. The results demonstrate that the in situ formation of SiC occurs by a gradual conversion of Al₄C₃ and Al₄SiC₄ to SiC. In situ SiC can be formed in an Al–40Si alloy solidified under a pressure of 3 GPa at a temperature of 1373 K. The SiC particles (SiC_p) formed in situ was compatible with the α-Al matrix and the Si phases. The relative density of the SiC/Al-38.6Si composite was 99.9%. The bending strengths of the Al–40Si alloy and the SiC/Al-38.6Si composite obtained by solidification under a pressure of 3 GPa were 200.8 MPa and 322 MPa, respectively, which represents an enhancement of 60.3% as a result of reinforcement by the in situ-formed SiC.     

A dense and fine-grained SiC/Ti3Si(Al)C2 composite and its high-temperature oxidation behavior

A dense SiC/Ti₃Si(Al)C₂ composite was synthesized by in situ hot pressing powders of Si, TiC and Al as a sintering additive at 1500 °C for 2 h under 30 MPa in Ar atmosphere. This composite has a fine-grained and homogeneous microstructure with grain sizes of 5 μm for Ti₃Si(Al)C₂ and of 1 μm for SiC. The SiC/Ti₃Si(Al)C₂ composite possesses an improved oxidation resistance, with parabolic rate constants of 4.57 × 10^?8 kg²/m⁴/s at 1200 °C and 1.31 × 10^?7 kg²/m⁴/s at 1300 °C. This study provides an experimental evidence to confirm the formation of amorphous phases in the oxide scale of the SiC/Ti₃Si(Al)C₂ composite. Microstructure and phase composition of the SiC/Ti₃Si(Al)C₂ composite and oxide scales were identified by X-ray diffractometry and scanning electron microscopy. The mechanism for the enhanced oxidation resistance has been discussed.     

Joining of SiCf/SiC using a layered Ti3SiC2-SiCw and TiC gradient filler

A layered filler consisting of Ti₃SiC₂-SiC whiskers and TiC transition layer was used to join SiC_f/SiC. The effects of SiC_w reinforcement in Ti₃SiC₂ filler were examined after joining at 1400 or 1500 °C in terms of the microstructural evolution, joining strength, and oxidation/chemical resistances. The TiC transition layer formed by an in-situ reaction of Ti coating resulted in a decrease in thermal expansion mismatch between SiC_f/SiC and Ti₃SiC₂, revealing a sound joint without cracks formation. However, SiC_f/SiC joint without TiC layer showed formation of cracks and low joining strength. The incorporation of SiC_w in Ti₃SiC₂ filler showed an increase in joining strength, oxidation, and chemical etching resistance due to the strengthening effect. The Ti₃SiC₂ filler containing 10 wt.% SiC_w along with the formation of TiC was the optimal condition for joining of SiC_f/SiC at 1400 °C, showing the highest joining strength of 198 MPa as well as improved oxidation and chemical resistance.     

Ti3SiC2 interphase coating in SiCf/SiC composites: Effect of the coating fabrication atmosphere and temperature

The SiC fibers were coated with Ti₃SiC₂ interphase by dip-coating. The Ti₃SiC₂ coated fibers were heat-treated from 900 °C to 1100 °C in vacuum and argon atmospheres to comparatively analyze the effect of temperature and atmosphere on the microstructural evolution and mechanical strength of the fibers. The results show that the surface morphology of Ti₃SiC₂ coating is rough in vacuum and Ti₃SiC₂ is decomposed at 1100 °C. However, in argon atmosphere, the surface morphology is smooth and Ti₃SiC₂ is oxidized at 1000 °C and 1100 °C. At 1100 °C, Ti₃SiC₂ oxidized to form a thin layer of amorphous SiO₂ embedded with TiO₂ grains. Meanwhile, defects and pores appeared in the interphase scale. As a result, the fiber strength treated in the argon was lower than that treated in vacuum. The porous Ti₃SiC₂ interphase fabricated under vacuum was then employed to prepare the SiC_f/SiC mini composite by chemical vapor infiltration (CVI) combined with precursor infiltration pyrolysis (PIP), and can effectively improve the toughness of SiC_f/SiC mini composite. The propagating cracks can be deflected within the porous interphase layer, which promotes fiber pull-outs under the tensile strength.     

Combustion synthesis of SiC/Al2O3 composite powders with SiC nanowires and their growth mechanism

SiC/Al₂O₃ composite powders with SiC nanowires were synthesized using a one-step combustion synthesis method taking silica fume (SiO₂), aluminum powder (Al) and carbon black (CB) as raw materials, while ferrocene (C₁₀H₁₀Fe) was used as the catalyst. The calculated results for the relationship between the equilibrium phase and temperature of the Al–SiO₂–C system show that SiC and Al₂O₃ are the only equilibrium phases in the system. In addition, the effects of C₁₀H₁₀Fe on the combustion synthesis process and products were studied. It was found that with increasing catalyst content, the amount of residual Si in the products first decreases and then increases, the combustion temperature first increases and then decreases, and the nanowire content continues to increase. For an optimal amount of C₁₀H₁₀Fe of 0.75 wt%, almost no residual Si is observed in the product, while the combustion temperature (T_c) is high (2104 K), the SiC nanowire content is relatively high, and the nanowire aspect ratio is large. In addition, two growth mechanism models for SiC nanowires: VS and VLS were validated.     

Wetting of SiC by Al-Ti alloys and joining by in-situ formation of interfacial Ti3Si(Al)C2

Two pressureless and reliable procedures for brazing SiC-based materials have been designed. The joining was obtained by the in-situ formation of a Ti₃Si(Al)C₂ MAX phase using simple Al-Ti interlayers. Wettability studies were conducted using several Al-Ti alloys in contact with SiC at 1500?°C. The interfacial microstructures and thermodynamic analysis demonstrated that liquid Al₃Ti in contact with SiC formed a well-bonded Ti₃Si(Al)C₂ interfacial layer. These findings guided the design of two joining methods: one consisted of the simple infiltration of Al₃Ti into the brazing seam, while an Al₃Ti paste/Ti/Al₃Ti paste interlayer assembly was designed for the second process. Sound interfaces without cracks were obtained in both processes. The average shear strength was very high, 296?MPa, for the infiltration method; the drawback was the presence of residual Al. Joining through Al₃Ti/Ti/Al₃Ti interlayers avoided the presence of low-temperature melting phases, with lower shear strength: 85 or 89?MPa depending on the testing method.     

Residual thermal stress of SiC/Ti3SiC2/SiC joints calculation and relaxed by postannealing

Residual thermal stresses in SiC/Ti₃SiC₂/SiC joining couples were calculated by Raman spectra and simulated by finite element analysis, and then relaxed successfully by postannealing. The results showed that the thermal residual stress between Ti₃SiC₂ and SiC was about on the order of 1 GPa when cooling from 1300°C to 25°C. The thermal residual stresses can be relaxed by the recovery of structure disorders during postannealing. When the SiC/Ti₃SiC₂/SiC joints postannealed at 900°C, the bending strength reached 156.9 ± 13.5 MPa, which was almost twice of the as‐obtained SiC/Ti₃SiC₂/SiC joints. Furthermore, the failure occurred at the SiC matrix suggested that both the flexural strength of joining layer and interface were higher than the SiC matrix.     

Matrix cracking of 2D SiC/SiC composite characterized by in situ SEM and nano-CT

Two-dimensional plain-woven silicon carbide (SiC) fiber-reinforced SiC matrix (2D SiC/SiC) composite was prepared by polymer infiltration-pyrolysis (PIP). Matrix cracking mechanisms of the composite were investigated by in situ SEM and nano-CT to grasp tensile damage evolution. Results showed that PIP-SiC matrix possessed low-fracture energy with non-homogeneous distribution, leading to simultaneous initiation of matrix cracking outside transverse fiber bundles and in unreinforced regions. Cracks then got deflected along weak fiber/matrix interface, which accelerated crack proliferation within the composite. With an increase in the stress, cracks subsequently deflected along plain-woven layers and converged to form longitudinal macrocracks. The composite was finally delaminated via sliding.     

Significant improvement of resistance to dry/water oxygen corrosion at medium and high temperatures of SiC/SiC composites upon matrix modification by Ca-Y-Al-Si-O microcrystalline glass

Matrix modification is of great significance for the densification of CVI-SiC/SiC, as well as the improvement of self-healing and oxidation resistance. A eutectic component of Y₂O₃-Al₂O₃-SiO₂ system modified with CaO (CYAS) was used in this study to modify SiC/SiC at 1400 °C. The oxidation behaviour of the composites was investigated under dry/water oxygen atmosphere at 900 °C and 1300 ℃. Compared to the relatively dense SiC/SiC, the modified SiC/SiC showed a slight increase in flexural strength and fracture toughness at room temperature, as well as a significant increase in oxidation resistance and densification. Our work provides a low-cost, simple-to-operate, short-cycle densification method for CVI-SiC/SiC composites that increases their oxidation resistance without compromising their mechanical properties at room temperature.     

Wetting and interfacial behavior of Al–Ti/4H–SiC system:A combined study of experiment and DFT simulation

Wetting and interfacial behavior of molten Al-(10, 20, 30, 40) at.%Ti alloys on C-terminated 4H–SiC at 1500 and 1550 °C were investigated experimentally, and theoretical bonding strength, structure stability and electronic structure of interfacial reaction products/C-terminated 4H–SiC interfaces were evaluated by first-principle calculations. The wetting experiments show that the Al–Ti/SiC systems present excellent wettability with contact angle of less than 15° except the Al–40Ti/SiC system performed at 1500 °C × 30 min. The SEM-EDS and TEM analyses demonstrate that the reaction products are mainly composed of Al₄C₃, TiC, Ti₃SiC₂, Ti₅Si₃C_X and τ phase, and their formation and evolution can be mainly affected by the Ti concentration in the Al–Ti alloys and wetting temperature. Moreover, the calculated results show that the SiC/C-terminated TiC interface presents the highest work of separation and its electronic property reveals that the localization of electrons and formation of covalent bond between interfacial C atoms lead to the excellent bonding strength of SiC/TiC interface.     

Almost seamless joining of SiC using an in-situ reaction transition phase of Y3Si2C2

A new design of seamless joining was proposed to join SiC using electric field-assisted sintering technology. A 500 nm Y coating on SiC was used as the initial joining filler to obtain a desired transition phase of Y₃Si₂C₂ layer via the appropriate interface reactions with the SiC matrix. The phase transformation and decomposition of the transition phase of Y₃Si₂C₂ was designed to achieve almost seamless joining of SiC. The decomposition of the joining layer to SiC, followed up by the inter-diffusion and complete densification with the initial SiC matrix, resulted in the formation of an almost seamless joint at the temperature of 1900 °C. The bending strength of the seamless joint was 134.8 ± 2.1 MPa, which was comparable to the strength of the SiC matrix. The proposed design of seamless joining could potentially be applied for joining of SiC-based ceramic matrix composites with RE₃Si₂C₂ as the joining layer.     

Improved mechanical properties of reaction-bonded SiC through in-situ formation of Ti3SiC2

Reaction-bonded SiC is a ceramic with excellent thermal properties, good corrosion resistance and the characteristic of near-net-shape manufacturing. However, the poor fracture toughness of free Si limits the applications of reaction-bonded SiC. In this study, TiC was added to reaction-bonded SiC and reacted with free Si to form Ti₃SiC₂. The effects of TiC and carbon black on the mechanical properties of reaction-bonded SiC were investigated. The results demonstrated that the in-situ formation of Ti₃SiC₂ and decrease in the content and size of free Si improved the mechanical properties of reaction-bonded SiC ceramics. The mechanical properties of TiC-added reaction-bonded SiC with 17.5 wt% carbon black were superior to those of TiC-added reaction-bonded SiC with 15 wt% carbon black. Moreover, increasing the TiC content of reaction-bonded SiC with 17.5 wt% carbon black from 0 to 7.5 wt% caused an increase in its bending strength from 183.92 to 424.43 MPa and an increase in fracture toughness from 3.7 to 5.24 MPa m^1/2.     

In-situ formation of Ti3SiC2 interphase in SiCf/SiC composites by molten salt synthesis

Titanium silicon carbide (Ti₃SiC₂) film was synthesized by molten salt synthesis route of titanium and silicon powder based on polymer-derived SiC fibre substrate. The pre-deposited pyrolytic carbon (PyC) coating on the fibre was utilized as the template and a reactant for Ti₃SiC₂ film. The morphology, microstructure and composition of the film product were characterized. Two Ti₃SiC₂ layers form the whole film, where the Ti₃SiC₂ grains have different features. The synthesis mechanism has been discussed from the thickness of PyC and the batching ratio of mixed powder respectively. Finally, the obtained Ti₃SiC₂ film was utilized as interphase to prepare the SiC fibre reinforced SiC matrix composites (SiC_f/Ti₃SiC₂/SiC composites). The flexural strength (σ_F) and fracture toughness (K_IC) of the SiC_f/Ti₃SiC₂/SiC composite is 460 ± 20 MPa and 16.8 ± 2.4 MPa?m^1/2 respectively.     

Fabrication of Ti3SiC2-Ti4SiC3-SiC ceramic composites through carbosilicothermic reduction of TiO2

Dense Ti₃SiC₂-SiC, Ti₄SiC₃-SiC, and Ti₃SiC₂-Ti₄SiC₃-SiC ceramic composites were fabricated through carbosilicothermic reduction of TiO₂ under vacuum, followed by hot pressing of the as-synthesized products under 25 MPa at 1600°C. In the reduction step, SiC either alone or in combination with elemental Si was used as a reductant. A one-third excess of SiC was added in the reaction mixtures in order to ensure the presence of approximately 30 vol.% SiC in the products of synthesis. During the hot pressing step, the samples that contained Ti₃SiC₂ showed better densification compared to those containing Ti₄SiC₃. The obtained composites exhibited the strength properties typical of coarse-grained MAX-phase ceramics. The flexural strength values of 424 and 321 MPa were achieved in Ti₃SiC₂-SiC, and Ti₃SiC₂-Ti₄SiC₃-SiC composites, respectively. The fracture toughness values were 5.7 MPa·m^1/2.