递变折射率增透膜

一、前言本文介绍用化学法制作两种递变折射率增透膜。一种是用溶胶～凝胶法制作,是将衬底浸于碱性硼硅酸盐玻璃溶胶中淀积上一层或多层凝胶衍生膜,然后加热将膜相分离,接着用沥滤液腐蚀掉可沥滤的相而留下SiO_2含量高的相成膜,适用于多种不同的激光和光学材料衬底。另一种是用中性溶液法制作,是将可相分离的碱性硼硅酸盐玻璃“衬底”相分离,然后用沥滤液腐蚀掉可沥滤的相而留下SiO_2含量高的相成膜,适用于任何可相分离的大粒度玻璃“衬底”。后一种“薄膜”实际上是玻璃块体     

铝膜沉积温度对铝诱导结晶化多晶硅薄膜性能的影响

以超白玻璃为衬底,采用热丝化学气相沉积法沉积初始非晶硅膜,经自然氧化形成二氧化硅层,最后利用磁控溅射 法在不同衬底温度下沉积铝膜,制备了glass/Si/SiO/Al叠层结构并对其进行铝诱导晶化形成多晶硅薄膜.用X射线衍射,光学显微镜和拉曼光谱对样品进行了分析.结果表明,铝诱导晶化制备的多晶硅薄膜的晶粒大小随着铝膜沉积...     

一个高亮度高分辨力特殊用途阴极射线管

为适应高亮度光源或高分辨力显示的需要,已研制出一种具有单晶体荧光屏的小型阴极射线管。这些新近研制的荧光屏用掺杂铈的钇铝石榴石(YAG)外延生长在商售的钇铝石榴石衬底上构成。这种屏的热传导性能异常好,并且光学图象清晰。文中介绍了管子结构以及它的两种工作模式的性能。     

关于有机膜涂复在荧光屏上的表面现象

阴极射线管荧光屏的铝化工序,包括在荧光粉层上涂复一层暂时的有机膜,便可使铝沉积在上面。这层膜涂覆的种种缺陷,最终就会损坏荧光屏。本文叙述了采用“流涂”技术时所遇到的某些固有的缺点,并考虑了掌握有机膜形成的主要因素以及如何防止缺陷的产生。     

稀土薄膜阴极射线发光屏的进展

目前,各种阴极射线发光终端显示器及彩色、黑白电视机,在科学研究、社会生产及人民生活中都起到了极其重要的作用。这类装置所用的荧光屏都是在玻璃衬底上沉积荧光粉层而制成的.这种荧光屏虽可满足一般的显示要求,但也存在着不足之处,如分辨率和对比度不高,不能经受高强度激发,     

谈谈电视机的新名词

什么是超滤荧光屏? 所谓“超滤荧光屏”,即在荧光屏玻璃上喷涂一层硅烷化合物,再进行烧结,使荧光屏上牢固粘附一层凹凸不平的透明导电膜。当环境光线照射在这层膜上时,反射光线不再定向地     

制造彩色电视荧光屏的乳胶膜

在制造彩色显象管过程中,要对荧光屏内表面施加荧光粉组成的上万计之荧光粉点或条状物,然后在这些连续的粉点或条组成的面上,盖上一层光亮如镜厚度约0.1～0.3μm铝(蒸铝)。当我们剖开显象管观察荧光屏内表面时,举目可见。就在采用蒸发方法将这镜状铝层固定于荧光粉点或条组成的表面之前,必须首先涂上一层厚度约0.2μm胶状膜,俗称有机膜。也就是说,铝粉蒸发在有机膜上,而不直接蒸发在荧光粉点或条上,当这个镜状铝层完成之后,有机膜这个层间物也就完成其工艺使命,要采用加温烘烤方法将其完全排除出去而不留痕     

极紫外多层膜光栅技术研究进展

极紫外多层膜光栅是一种人造二维周期性结构,它将横向结构上的光栅衍射与深度结构上的多层膜布拉格衍射相结合,使得在极紫外波段采用非掠入射、高衍射效率、高光谱分辨率的分光元件成为可能,在天文学、物理学、材料科学等领域具有广阔的应用前景。介绍了极紫外多层膜光栅的应用;从光栅衬底制备与多层膜沉积两方面对多层膜光栅制备技术的研究进展进行了分析;并从实际应用角度出发,对未来多层膜光栅技术研究的发展趋势作了展望。     

多孔硅表面冷电子发射的研究

本文研究了多孔硅二极管表面发射电子的特性。ＰＳ二极管由薄金膜、ＰＳ层、ｎ型Ｓｉ衬底和欧姆接触铝背电极组成。在真空中,当在金属电极和铝背电极间加适当高的正电压且在收集极板和金电极间存在高外电场时,伴随着可见光,电子均匀地穿过金膜出来。电子发射的机理基于ＰＳ层外表面附近的强场效应。     

玻璃磁盘

日本HOYA公司与美国共同研制成玻璃磁盘.这种磁盘的存储容量是现行铝制磁盘的备5～10倍,价格与高密度的铝制磁盘大致相同.制作方法是用蒸镀法在玻璃基片的表面涂敷磁性体.它充分有效地利用玻璃的表面硬度、刚性、平面平滑度等特征,不需要弥补铝基片缺陷的衬底膜的镀镍层.因为玻璃表面的平滑性高,所以读出信息的磁头间隙能缩小到微米级,因此提高了存储容量.目前,该产品的尺寸有3.5英寸和5.25英寸两种.     

加入激子阻挡层增强白色有机发光器件效率

通过在发光层（EBL）与电子注入层之间增加激子阻挡层（EBL）制备了新型白色有机发光器件（WOLED）。有EBL的新型器件效率和亮度均比传统结构器件高50％,在电流密度为4mA／cm^2时效率达到3．42cd／A,最大亮度为11000cd／m^2（16V）,色坐标为x=0．34、y=0．36;而具有相同EBL厚度的传统结构器件,在电流密度为4mA／cm^2时效率为2．15cd／A,最大亮度为6259cd／m^2（16V）。效率的提高是由于EBL的限制作用而提高了激子浓度。测量了器件的效率与电流密度关系,随电流密度增加电流效率的衰减缓慢,说明短寿命红色搀杂剂的激子-激子湮灭很弱。     

不同粒径YAG荧光粉对LED封装光源的影响研究

挑选国内某知名荧光粉企业的三种YAG荧光粉作为研究对象,三种样品的激发光谱相同,中心粒径(D50分别为9.3、13.6、16.7μ用这三种荧光粉,在相同粉胶质量比,相同点胶量的情况下,使用3014型号支架,制作出白光LED灯珠样品。使用分光分度计分别测量老化前后样品的各项光学参数。试验结果显示:随着荧光粉中心粒径的增大,色温向着高色温方向移动;当色温相同时,随着中心粒径的增大,光通量随之增大,使用100 mA电流加速老化一个星期情况下,随着荧光粉粒径的增大,光衰逐渐减小。     

Enhanced Efficiency and Durability of Organic Electroluminescent Devices by Doping in Emitting Layer

Remarkable improvement in efficiency and stability has been observed in a doped organic electroluminescence device, which consists of a hole-transport layer, an electron-transport layer and a luminescent layer. The hole-transport layer is a N,N'-bis(3-methyphenyl)-N,N'-diphenylbenzidine film. The doped emitting layer consists of 8-(quinolinolate)-aluminum as the host and rubrene as the emission dopant. The doped device demonstrated a brightness in excess of 40 000 cd/m 2 and the maximum external quantum efficiency of 3.4%, which is about six times and four times respectively greater than those of the undoped device. For no packaged deviced, a luminance half-life on the order of about 230 h has been achieved under a constant current density of 15 mA/cm 2, starting at 500 cd/m 2 at the room temperature.     

High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layers

An improved thick dielectric (TD) layer for inorganic electroluminescent (EL) display devices has been achieved through a composite high-/spl kappa/ dielectric sol-gel/powder route. This composite TD film results in a luminance improvement (up to 10/spl times/) in these TDEL devices with Eu-doped GaN and Mn-doped ZnS phosphor layers. The use of a composite TD film, composed primarily of lead-zirconate-titanate (PZT), results in a significantly higher charge (>3 /spl mu/C/cm/sup 2/) coupling to the phosphor layer. Furthermore, the reduction in porosity of the TD has improved the homogeneity of electric field applied to the phosphor layer, resulting in a steeper luminance-voltage slope. The reduction in porosity has also decreased the diffuse reflection of the TD, which when pigmented, exhibits a diffuse reflectivity of <2% resulting in high display contrast. High luminance levels of up to 3500 cd/m/sup 2/ have been achieved from the ZnS:Mn TDEL devices and 450 cd/m/sup 2/ from GaN:Eu devices. A detailed analysis of the electrical steady-state time-varying characteristics has shown that the electrical performance of TDELs is very similar to TFELs in spite of the physical asymmetry in the device structure. These results demonstrate that three critical requirements for practicality of the TDEL approach (formation on standard display glass, low reflectivity, and electric field homogeneity) can be obtained by careful selection and design of the device materials, fabrication process and device structure.     

基于新ALIS技术的高性能55英寸WXGA-PDP

介绍一款基于ALIS技术的55英寸WXGA(象素数为1366×768)等离子体显示板。它以高亮度显示板结构、新连续驱动模式和独特的数据处理方法获得了高显示性能。显示板的峰值亮度为1000cd/m 2,全屏白场亮度160cd/m 2,对比度1000:1。     

A high luminance high-resolution cathode-ray tube for special purposes

For those applications where light sources of high radiance or displays of high resolution are necessary, miniature cathode-ray tubes have been developed with monocrystalline luminescent screens. These newly developed screens consist of cerium-doped yttrium-aluminum garnet (YAG), epitaxially grown on commercially available YAG substrates; they have an excellent heat conductivity and are optically clear. The construction of the tube and its performance in two modes of operation are described. When the tube is operated with a continuous undeflected beam, the luminance of the spot is limited by thermal quenching of the phosphor material. Under these circumstances, the maximum luminance of 1.9 × 10⁸cd/m²(0.55 × 10⁸FTL or 4 × 10⁵W/m²sr) is reached at a power of 70 mW in a 3.5-µA 20-kV beam, focussed to a spot of 9 µm diameter. Equipped with appropriate deflection coils and scanned with an interlaced field of 575 active lines and 25-Hz repetition frequency, the tube can handle up to 20 W of beam power in a 12 × 16 mm²image area. In this mode, the luminance is limited by the design of the electron gun and the desired resolution. At 20 kV and 100 µA (i.e., at 7500 cd/m²) the tube has a half-intensity linewidth of 60 µm, which is equivalent to 500-TV limiting response lines in the same 12 × 16 mm²area.     

Enhanced Efficiency and Durability of Organic Electroluminescent Devices by Doping in Emitting Layer

Remarkable improvement in efficiency and stability has been observed in a doped organic electroluminescence device,which consists of a holetransport layer,an electron-transport layer and a luminescent layer.The holetransport layer is a N,N‘-bis(3-methyphenyl)-N,N‘-diphenylenzidine film,The doped emitting layer consists of 8-(quinolinolate)-aluminum as the host and rubrene as the emission dopant.The doed device demonstrated a brighness in excess of 40000cd/m^2 and the maximum external quantum efficiency of 3.4%,which is about six times and four times respectively greater than those of the undoped device,For no packaged deviced,a luminance half-life on the order of about 230h has been achieved under a constant current density of 15mA/cm^2,starting at 500cd/m^2 at the room temperature.     

Efficient White‐Electrophosphorescent Devices Based on a Single Polyfluorene Copolymer

An efficient white‐light‐emitting polymer ( W3 ) is realized by covalently attaching a green fluorophore and a red phosphor into the backbone and the side chains, respectively, of polyfluorene at a concentration of 0.04 mol %. In addition, charge‐transporting pendant units are included to improve carrier injection and transport. White‐electrophosphorescent devices with the structure ITO/PEDOT:PSS/ W3 /CsF/Al (ITO: indium tin oxide; PEDOT:PSS: poly(styrenesulfonate)‐doped poly(3,4‐ethylenedioxythiophene)) exhibit a low turn‐on voltage of 2.8 V and a luminance of ca. 10³ cd m^–2 at below 6 V. The peak luminance and power‐conversion efficiencies are 8.2 cd A^–1 and 7.2 lm W^–1, respectively. Furthermore, the device shows relatively stable white emission: the Commission Internationale d'Éclairage (CIE) chromaticity coordinates of the devices change only slightly from (0.35,0.38) at 10 mA cm^–2 to (0.33,0.36) at 100 mA cm^–2, with an almost constant color render index (CRI) value of 82 at all measured current densities.     

Efficient blue fluorescence tandem organic light emitting device with a novel intermediate connector

A novel intermediate connector (IC) was formed which was composed of aluminum (Al, 3 nm)/1,4,5,8,9,11- hexaazatriphenylene-hexacarbonitrile (HAT-CN). The 3-nm-thick Al in the IC is certified to efficiently generate intrinsic charge carriers, and the HAT-CN is proved to work as the holes injection layer (HIL) for the corresponding electroluminescent (EL) unit simultaneously. This simply IC comprehensively takes advantage of the features of the HAT-CN so as to stack two single EL units without introducing extra material. In addition to a significant enhancement in luminance and current efficiency, a current efficiency (CE) of 10.2 cd/A and a luminance of 2 042 cd/m2 under the current density 20 mA/cm2 of this tandem organic light emitting device (TOLED) are yielded, which are notably almost the sum of that of the two single-unit devices.     

5 inch MgAl/sub 2/O/sub 4/ phosphor screen for projection display

A new kind of MgAl/sub 2/O/sub 4/ phosphor screen for projection display is reported. The 5 inch phosphor screen is fabricated by depositing powder on MgAl/sub 2/O/sub 4/ substrate. Because MgAl/sub 2/O/sub 4/ has the characteristics of higher heat conductivity than the conventional glass faceplate, the phosphor screen achieves very high brightness, good contrast ratio, high resolution and long lifetime, and therefore realises large-screen projection display.