不同剖面DDF中啁啾高斯脉冲展宽的研究

文章从理论上推导了啁啾高斯脉冲在5种不同群色散剖面光纤中的传播特性和初始啁啾对脉宽的影响.与常规单模光纤(SMF)相比,这5种色散缓变光纤(DDF)中的脉冲展宽较慢,能有效抑制脉冲展宽,但这5种DDF之间也存在着较大的差异.初始啁啾对脉冲的影响体现在:当β2c＞0时,脉冲展宽速度比无啁啾时要快;当β2c ＜0时,脉冲有一初始窄化过程,之后又快速展宽.     

采用啁啾光纤光栅补偿带啁啾的超高斯脉冲在光纤中传输的色散

利用啁啾光纤光栅,对带啁啾的超高斯脉冲的色散补偿特性进行了理论分析和数值模拟。数值模拟结果表明,光脉冲在普通单模光纤中传输了一定距离后,由于色散的作用,脉冲发生展宽,超高斯脉冲比高斯脉冲展得更宽。若初始脉冲含有啁啾,展宽后的脉冲还出现小调制。用啁啾光纤光栅进行色散补偿后,高斯型脉冲能够较好的恢复初始脉冲形状,带啁啾的超高斯脉冲的脉宽可恢复到接近初始脉冲的宽度,但脉冲形状发生了畸变,并出现了旁瓣,脉冲峰值功率与超高斯脉冲阶数和啁啾参数有关。     

色散缓变与啁啾效应

本文求解了色散缓变光纤中含频率啁啾效应的NLS方程，由得到的孤子解讨论了色散缓变与啁啾效应对弧子脉宽的影响。     

非啁啾光纤光栅在色散补偿中的应用

本文基于均匀布拉格光纤光栅的色散特性和啁啾高斯脉冲的传输演变特性,研究了工作于传输方式的非啁啾光纤光栅的色散补偿性能,讨论了光栅长度,光栅耦合系数等光栅参数以及初始脉宽,初始啁啾等脉冲参量对补偿光纤长度的影响。     

偏振模色散对线性系统脉宽的影响

研究了线性系统中偏振模色散对均方根脉宽的影响。考虑了光源初始啁啾的作用 ,推导出均方根脉宽的解析表达式 ,分析表明 :二阶偏振模色散对脉冲展宽的作用与群速度色散及啁啾有关 ,一阶偏振模色散的作用则与这两者无关。以啁啾高斯脉冲为例 ,推导出一阶偏振模色散补偿前、后均方根脉宽的解析表达式 ,结果表明 ,适当选择群速度色散和初始啁啾参数 ,可以有效地抑制偏振模色散的展宽效应 ;与主态传输法比较 ,啁啾的存在对后向补偿方法的影响更大     

色散缓变光纤中皮秒啁啾脉冲的孤子效应压缩

文章从描述皮秒光脉冲在色散缓变光纤（FSDD）中所满足的非线性Schroedinger(NLS)方程出发，数值模拟了高阶皮秒光孤子在不同的FSDD中的孤子效应压缩，并讨论了初始啁啾对其的影响，结果表明，利用FSDD和孤子效应压缩来压缩带有初始啁啾的高阶皮秒光孤子，可以得到更高的压缩比和品质因子，压缩后的脉冲的峰值功率明显提高，而且脉冲被压缩到最窄所需的光纤长度也大大缩短，最后讨论了初始脉宽的影响。     

高斯脉冲在色散缓变光纤中传输特性的研究

应用变分法,研究了高斯脉冲在色散缓变光纤中的传输特性,导出了高斯脉冲参数的演化方程组.在此基础上,讨论了色散缓变和初始啁啾对脉冲宽度的影响.     

色散阶变光纤中啁啾演变的研究

给出了色散阶变光纤中群速度色散效应导致的啁啾表达式，采用数值方法模拟了该光纤中的啁啾演变过程。研究结果表明：色散阶变光纤中的啁啾以色散缓变光纤中啁啾为中心跳跃式变化，逐渐与色散缓变光纤中啁啾重合，且比常规光纤中的啁啾小。     

无初始啁啾高斯光脉冲的色散展宽及色散补偿

对无初始啁啾高斯脉冲在普通单模光纤中的传输特性及线性啁啾光纤光栅的色散补偿特性进行了理论分析和数值模拟。结果表明,光纤的色散导致了传输脉冲的展宽,线性啁啾光纤光栅能够实现对展宽脉冲的良好补偿,啁啾光栅时延曲线的平滑度和线性度都是影响其色散补偿性能的重要因素。本文对啁啾光纤光栅的制作及其在色散补偿中的应用有一定的指导意义。     

高斯脉冲在光纤中传输的光纤光栅色散补偿研究

高斯脉冲在光纤中传输一段距离后，啁啾系数和脉冲宽度均要发生变化，不同啁啾系数和脉冲宽度的高斯脉冲经过啁啾光纤光栅反射后的脉宽压缩特性也不同。本文介绍了啁啾高斯脉冲在光纤中的传输特性以及啁啾高斯脉冲经啁啾光纤光栅反射后的传输特性。理论分析和实验均表明，使用啁啾光纤光栅实现长距离色散补偿时，最佳色散补偿长度与光栅位置有关。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.