0.13μm CMOS高精度过温保护电路的设计

采用0.13 μm CMOS工艺,设计了一款过温保护电路.芯片内部温度超过109℃时,产生过温保护信号,电路停止工作,从而起到保护作用.为了防止产生热振荡,采用滞回方式.设计实现了在109℃时关断,78℃时再次开启,有31℃滞迟.仿真结果显示,在电源电压波动或工艺参数变化时,过温保护电路的热关断及迟滞阈值点漂移最大误差仅为2℃,稳定性好.     

一种应用于LIN收发器的过温保护电路

基于CSMC (Central Semiconductor Manufacturing Corporation)0.5μm CMOS工艺设计一种应用于LIN收发器的过温保护电路.该电路包含比较器,并利用两种不同温度特性的电压作为比较器的输入电压.比较器的输出电压作为过温保护电路的输出信号.使用Cadence Spectre工具进行仿真,仿真结果表明,该电路热关断温度为160℃,热开启温度为120℃,具有40℃的热滞回区间.     

电源管理芯片过温保护电路的分析与设计

保护电路是电源管理芯片的一个重要环节,研究一种高可靠的保护电路是非常重要的。为了保证电源管理芯片在复杂的环境中可以正常使用,本文主要对其中的保护电路进行了详细的分析,并设计出过温保护电路。根据可重用性的设计方法,在CSMCO．5μm工艺下,利用Cadence spectreI具对过温保护电路进行前端仿真验证。在不同电源电压下,对保护功能开启时的温度、滞迟范围、滞迟开启温度都进行了仿真测试。通过滞迟模块既有效抑制了芯片温度的升高,又避免频繁对功率管的关断。     

0.6m CMOS过温保护电路设计

采用CSMC5V0.6μm标准CMOS工艺设计研制了一种过温保护电路。该电路由三部分构成:PTAT(与热力学温度成正比)电压产生电路,带隙基准源电路和比较器电路。芯片测试结果表明在30～130℃温度范围内PTAT输出电压线性度良好(最大偏差小于1.6%),灵敏度约为10mV/℃;关断温度可由外接电阻设定,85℃以下实测值与设定值偏差小于5℃,85℃以上偏差稍大约为10℃。该过温保护芯片电路结构简单、面积小、功耗低,且具有良好的移植性,可广泛应用于LED照明驱动电路,电源管理芯片等场合,也可用于和MOS功率器件混合封装组成带过温保护的功率器件模块。     

带有过温保护和自适应调节的LED驱动电路

设计了一种带有过温保护和自适应调节功能的发光二极管(LED)恒流驱动电路。该驱动电路主要由过温保护电路和自适应电路组成,过温保护电路用于检测系统的工作温度情况,当系统处于高温时会输出关断信号使电路停止工作;自适应电路在自适应温度范围内通过向恒流模块输入与绝对温度成正比(PTAT)电流来调控LED驱动电流的大小,达到自适应目的。该LED驱动电路将温度自适应与带有滞回功能的过温关断电路巧妙地结合在一起,使得电路简单,性能良好。基于0.5 μm CMOS工艺,Spectre仿真结果表明：当系统在0 ℃~89.6 ℃变化时,恒流输出波动小于0.57%;在89.6 ℃~111 ℃变化时,调控输出电流可调幅度为80 ｍA;在114 ℃时,过温保护电路开启,电路停止工作,直到温度降回73.3 ℃后,LED驱动电路重新开始工作。     

一种基于电流比较的新型过温保护电路

设计了一种基于BiCMOS工艺、结构新颖的过温保护电路.对基准电流产生机理、芯片关断温度、芯片重新开启温度、温度滞回量和电路转换速度进行理论推导,给出了电路核心器件的参数设置.仿真结果显示,电路在127℃时关断芯片,116℃时重新开启芯片,温度滞回量为11℃,电路转换速度为26.2 V/℃,性能稳定、可靠.     

基于电流比较的过温保护电路设计

由于芯片集成度的提高,改善电路性能的同时也导致功率密度增加.为了防止芯片过热,保证芯片可靠、稳定的工作,设计了一款基于电流比较的新型过温保护电路.电路通过产生与绝对温度(正/负温度系数PTAT/CTAT)相关的电流并进行电流比较,输出包含温度信息的逻辑控制信号,实现对芯片工作状态的控制.对电路的工作原理进行了详细的分析和推导,并给出了电路中核心器件的参数设置.基于UMC 0.6 μm BiCMOS工艺进行了流片并对电路进行了测量,热关断、开启温度分别为125℃和114℃,具有1 1℃的温度滞回量;转换速率26.2 V/℃,具有高灵敏度、高精度的特点;当供电电压发生变化时,电路性能稳定,具有较好的应用前景.     

一种高精度阈值可调过温保护电路的设计

设计了一种高精度阈值可调过温保护电路。该电路利用与温度无关的电压和一个具有负温度系数的电压相比较,实现温度的检测。通过基准分压得到高、低阈值电压可调的迟滞比较器,具有较高的精度。基于0.18μm BCD工艺模型,利用Hspice软件对电路进行仿真。仿真结果表明,在典型应用下,当温度高于150.5℃时,过温保护电路输出高电平,关断电路;当温度低于130.5℃时,电路重新开启,具有20℃迟滞量。在3~5.5 V电源电压范围内,过温电压阈值和迟滞温度最大偏移量小于0.02℃。     

一种高精度过温保护电路的设计

设计了一种高精度的过温保护电路。利用晶体管基极和发射极的负温特性实现温度检测,通过将检测点电压和设定的电压相比较,检测是否过温。由于使用了一个高、低阈值可调的高精度滞回比较器,并且阈值电压点电压由与温度无关的带隙基准提供,因此实现较高的精度和可靠性。通过Cadence Spectre工具基于某公司0.35μm CMOS工艺进行了仿真验证。该设计具有20℃温度迟滞,热关断点为125℃,热开启点为105℃,在3~5.5 V的电压范围内,热关断点和热开启点温度最大漂移不超过0.4℃。     

一种使用双极工艺的温度检测电路

温度检测是芯片和系统中经常需要的功能,温度检测电路的应用非常广泛.文章详细分析了与温度成正比(PTAT)电压的产生原理,并以此原理为基础设计了一种基于双极工艺的温度检测电路,电路的设计输出电压与温度成正比.通过使用Cadence Spectre仿真工具对电路的功能进行仿真,结果表明该电路在-40℃～120℃内能正常工作...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks