Electrical and optical properties of TiO<Subscript>2</Subscript> and TiO<Subscript>2</Subscript>:Fe thin films

TiO₂ and TiO₂:Fe thin films have been grown by electron beam evaporation and the influence of doping and heat treatment on their electrical and optical properties has been studied.     

Optical and electrical properties of E-Beam deposited TiO<Subscript>2</Subscript>/Si thin films

In this paper, optical and electrical properties of E-Beam deposited TiO₂/Si thin films have been studied and investigated extensively. The films were deposited on p-type (100) silicon wafer by using electron beam evaporation technique. The thickness of the thin films was measured by a spectroscopic reflectometer, which is about 216 nm. The fabricated titanium oxide (TiO₂) thin films were annealed at 800 °C for 1 h under N₂ ambient. X-ray diffraction measurements were performed to study the structure and phase identification of the fabricated TiO₂ thin films. For the optical properties, reflection, transmittance, refractive index and absorption coefficient were obtained and analyzed. The photocurrent and dark current of the fabricated films were measured by I–V measurements. The measurement of the current–voltage (I–V) characteristics possesses good ohmic contact. The electrical characterizations of the films were performed in the range of the low frequencies (50 and 100 kHz) and high frequencies (750 kHz and 1 MHz) by the capacitance–voltage and conductance–voltage measurements at room temperature. The capacitance of the fabricated TiO₂ MOS capacitor at both high and low frequencies increases with the decrease in frequencies. The obtained conductance curves (peaks) increase with the decreasing in the frequencies. This can be due to the interface state density, series resistance and interfacial dielectric of the fabricated MOS capacitors. The variation in the characteristics of the fabricated film shows that TiO₂ is a promising candidate to be used in the optoelectronic and future UV detector applications as a switch, such as an optical amplifier, emitter, and UV light detectors.     

Photoinduced properties of nanocrystalline TiO<Subscript>2</Subscript> sol-gel derived thin films

In this paper, nanostructure TiO₂ thin films were deposited on glass substrates by sol-gel dip coating technique. X-ray diffraction and Fourier transform infrared spectroscopy were used to determine film behaviour. The super-hydrophilicity was assessed by contact angle measurement. Photocatalytic properties of these films were evaluated by degradation of methylene blue under UV irradiation. The XRD pattern of TiO₂ powder samples confirmed the presence of polycrystalline anatase phase with a crystal size of 17 nm. The results indicated that UV light irradiation had significant effect on super-hydrophilic and photocatalytic properties of TiO₂ thin films.     

Fabrication of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> double layer thin films with self-cleaning and photocatalytic properties

Transparent antireflective SiO₂/TiO₂ double layer thin films were prepared using a sol–gel method and deposited on glass substrate by spin coating technique. Thin films were characterized using XRD, FE-SEM, AFM, UV–Vis spectroscopy and water contact angle measurements. XRD analysis reveals that the existence of pure anatase phase TiO₂ crystallites in the thin films. FE-SEM analysis confirms the homogeneous dispersion of TiO₂ on SiO₂ layer. Water contact angle on the thin films was measured by a contact angle analyzer under UV light irradiation. The photocatalytic performance of the TiO₂ and SiO₂/TiO₂ thin films was studied by the degradation of methylene blue under UV irradiation. The effect of an intermediate SiO₂ layer on the photocatalytic performance of TiO₂ thin films was examined. SiO₂/TiO₂ double layer thin films showed enhanced photocatalytic activity towards methylene blue dye.     

Synthesis and characterization of nanocrystalline TiO<Subscript>2</Subscript> thin films

Nanocrystalline thin films of TiO₂ have been synthesized by sol gel spin coating technique Thin films of TiO₂ annealed at 700 °C were characterized by X-ray diffraction(XRD), Atomic Force Microscopy, High resolution TEM and Scanning Electron Microscopy (SEM), The XRD shows formation of tetragonal anatase and rutile phases with lattice parameters a = 3.7837 Å and c = 9.5087 Å. The surface morphology of the TiO₂ films showed that the nanoparticles are fine with an average grain size of about 60 nm. Optical studies revealed a high absorption coefficient (10⁴ cm^?1) with a direct band gap of 3.24 eV. The films are of the n type conduction with room temperature electrical conductivity of 10^?6 (Ω cm)^?1.     

Effect of V<Subscript>2</Subscript>O<Subscript>5</Subscript> content on the optical,structural and electrochromic properties of TiO<Subscript>2</Subscript> and ZrO<Subscript>2</Subscript> thin films

Vanadium oxide (V₂O₅) mixed titanium oxide (TiO₂) and zirconium oxide (ZrO₂) thin films were fabricated on glass substrates (corning 2947) and on indium tin oxide (ITO) coated glass substrates by sol gel spin coating process. Their optical, structural and electrochromic properties were investigated. The results were compared with pure TiO₂ and ZrO₂ thin films. Mixture of V₂O₅ with both types of film reduces the transmittance at the higher wavelengths. The refractive index of the V₂O₅ mixed TiO₂ and ZrO₂ films increases when compared with pure TiO₂ and ZrO₂ films. AFM images demonstrate no significant topographical changes for V₂O₅ mixed TiO₂ whereas for V₂O₅ mixed ZrO₂ films a topographical change is observed. V₂O₅ mixed TiO₂ showed slight increase in their charge capacity.     

ZrO<Subscript>2</Subscript> thin films on Si substrate

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO₂ as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO₂ (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO₂ as high-κ dielectrics replacing SiO₂ is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO₂ thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed.     

Preparation of La<Subscript>2</Subscript>NiMnO<Subscript>6</Subscript> thin films on Pt/TiO<Subscript>2</Subscript>/SiO<Subscript>2</Subscript>/Si substrates by pulsed laser deposition

Double perovskite La₂NiMnO₆ thin films were prepared on Pt/TiO₂/SiO₂/Si substrates by the pulsed laser deposition process, and the crystal structure and microstructures were investigated. The temperature and the oxygen pressure played the primary roles dominating the crystallization behavior and the morphology of La₂NiMnO₆ thin films. The well crystallized La₂NiMnO₆ thin films could be obtained at 873 and 923 K under all oxygen pressures investigated here, and the fine morphology was obtained under the oxygen pressures equal to or higher than 50 and 100 Pa, respectively, while phase constitution was significantly affected by the oxygen pressure for La₂NiMnO₆ thin films prepared at 1,023 K where the higher oxygen pressure led to the appearance of some secondary phase.     

Optical properties of CeO<Subscript>2</Subscript> thin films

Cerium oxide (CeO₂) thin films have been prepared by electron beam evaporation technique onto glass substrate at a pressure of about 6 × 10⁻⁶ Torr. The thickness of CeO₂ films ranges from 140–180 nm. The optical properties of cerium oxide films are studied in the wavelength range of 200–850 nm. The film is highly transparent in the visible region. It is also observed that the film has low reflectance in the ultra-violet region. The optical band gap of the film is determined and is found to decrease with the increase of film thickness. The values of absorption coefficient, extinction coefficient, refractive index, dielectric constant, phase angle and loss angle have been calculated from the optical measurements. The X-ray diffraction of the film showed that the film is crystalline in nature. The crystallite size of CeO₂ films have been evaluated and found to be small. The experimental d-values of the film agreed closely with the standard values.     

Structural and optical properties of nanocrystalline WO<Subscript>3</Subscript> thin films

The nanocrystalline WO₃ thin films were deposited by r.f. magnetron sputtering on quartz and p- type Si (100) substrates at a constant power of 25 W and at three different sputtering pressures (0.05, 0.01 and 0.5 mbar) and post annealed at different temperatures. The deposited films were characterized by XRD, UV–VIS spectrophotometry, ellipsometry and atomic force microscopy (AFM). The structural studies from XRD spectra reveals that the films deposited at 0.05 mbar and post annealed at 573 and 673 K have the predominant orthorhombic phase, whereas at 0.1 mbar and 573, 673 K triclinic phase is predominant. When sputtering pressure is at 0.5 mbar the predominant phase is monoclinic when annealed at 473 K and triclinic at 673 K. The optical energy gap is influenced significantly by sputtering pressure and post annealing temperatures. The optical energy gap of the films deposited at higher sputtering pressures and post annealed at lower temperatures is high due to smaller crystallite sizes. The thickness of all deposited films at different conditions is around 200 nm.     

Fabrication and properties of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> composites

Composites in the form of precipitated powders, hybrid xerogels, and SiO₂ core/TiO₂ shell particles have been produced via hydrolysis of precursors (alkoxides and inorganic derivatives of titanium and silicon) and have been characterized by differential thermal analysis, X-ray diffraction, adsorption measurements, and macroelectrophoresis. The results demonstrate that heat treatment of the composites leads to crystallization of the titanium-containing component and, accordingly, reduces their specific surface area. Hydrothermal treatment enables the fabrication of materials in which TiO₂ nanocrystals are evenly distributed over an amorphous SiO₂ matrix.     

Electrical and optical properties of InSbSe<Subscript>3</Subscript> amorphous thin films

Electrical conductivity, I–V characteristics and optical properties are investigated for InSbSe₃ amorphous thin films of different thicknesses prepared by thermal evaporation at room temperature. The composition of both the synthesized material and thin films were checked by energy dispersive X-ray spectroscopy (EDX). X-ray analysis indicated that all samples under investigation have amorphous structure. The dc electrical conductivity was measured in the temperature range (303–393 K) and thickness range (149–691 nm). The activation energy ΔE _σ was found to be independent of film thickness in the investigated range. The obtained I–V characteristic curves for the investigated samples are typical for memory switches. The switching voltage increases linearly with film thickness in the range (113–750 nm), while it decreases exponentially with temperature in the range (303–393 K). The switching process can be explained according to an electrothermal process initiated by Joule-heating of the current channel. Measurements of transmittance and reflectance in the spectral range (400–2,500 nm) are used to calculate optical constants (refractive index n and absorption index k). Both n and k are practically independent of film thickness in the investigated range (149–691 nm). By analysis of the refractive index n the high frequency dielectric constant ε_∞ was determined via two procedures and was found to have the values of 9.3 and 9.15. Beyond the absorption edge, the absorption is due to allowed indirect transitions with energy gap of 1.46 eV independent on film thickness in the investigated range.     

Structural,optical and microscopic properties of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films

Solar cell technologically important binary indium selenide thin film has been developed by relatively simple chemical method. The reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature gives deposits In₂Se₃ thin film. Various preparative parameters are discussed. The as grown films were found to be transparent, uniform, well adherent, red in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, Energy dispersive atomic X-ray diffraction, optical absorption and electrical conductivity properties. The direct optical band gap value E_g for the films was found to be as the order of 2.35 eV at room temperature and having specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications considering the optoelectric and structural data obtained.     

Structural,optical, and opto-dielectric properties of W-doped Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> thin films

A layer-by-layer deposition technique of Ga₂O₃ and WO₃ by vacuum evaporation method on glass and silicon substrates and subsequent annealing in oxygen atmosphere to form W-doped Ga₂O₃ (or Ga₂O₃:W) films was attempted here. The W doping level was measured by the energy dispersive X-ray fluorescence radiographic analysis. The crystalline structure of Ga₂O₃:W films was determined by the X-ray diffraction method. Experimental data indicate that W⁶⁺ ions doped in host Ga₂O₃ forming solid solutions (SS), in which the molar ratio (r) of W to Ga is 9.6, 13.4, 18.2, 22.7 and 30.4%. All the prepared SS have the known β-Ga₂O₃ crystalline structure. This doping controls the optical and electrical properties of the host Ga₂O₃. The optical properties of the prepared Ga₂O₃:W films were studied by UV–VIS–NIR absorption spectroscopy method from which the bandgap was determined. In general, it was found that the prepared Ga₂O₃:W films are wide-bandgap semiconductors with bandgap 4.69–4.47 eV and have dielectric properties. The optical sensitivity of the capacitance, dissipation factor and ac-conductance of the Ga₂O₃:W films grown on Si was studied as a function of W-doping level. It was observed that the prepared Ga₂O₃:W film of r = 22.7% has the highest photosensitivity amongst the other samples.     

Electrical properties of stacked CuInSe<Subscript>2</Subscript> thin films

CuInSe₂ thin films have been prepared by the processing of stacked elemental layer (SEL) on glass substrates followed by annealing in air for different times. Films produced at 300 and 350 ^∘C showed n-type semiconductor due to indium interstitial donors. Electrical properties (resistivity) of the CuInSe₂ films have been systematically studied in terms of annealing temperatures and times. The resistivity was in the interval 10¹–10⁴ Ω cm and influenced by the heating time and decreased with temperature. The activation energy ranged from 0.046 to 0.154 eV in the range 300–600 K. The scattering process due to the energy barriers that exist between adjacent grains was considered.     

Nanoscale defects and microwave properties of (BaSr)TiO<Subscript>3</Subscript> ferroelectric thin films

Thin film ferroelectrics may have important applications in microwave devices but in general have significantly worse properties than bulk material. This is principally because of secondary and point defects. The natures of the defects are reviewed and strategies to study and remove them outlined.     

Enhanced cellular osteogenic differentiation on Zn-containing bioglass incorporated TiO<Subscript>2</Subscript> nanorod films

Surface nanotopography and bioactive ions have been considered to play critical roles on the interactions of biomaterials with cells. In this study, a TiO₂ nanorod film incorporated with Zn-containing bioactive glass (TiO₂/Zn-BG) was prepared on tantalum substrate, trying to evaluate the synergistic effects of nanotopograpgy and bioactive ions to promote cellular osteogenic differentiation activity. The expression of osteogenic-related genes, ALP as well as the ECM mineralization on TiO₂/Zn-BG film were significantly upregulated compared to that of the film without TiO₂ nanorod nanostructure (Zn-BG) or without Zn (TiO₂/BG). Moreover, a much low Zn²⁺ release level on TiO₂/Zn-BG film was beneficial to promote the osteogenesis, which could be ascribed to that a semi-closed space established by TiO₂ nanorods with adhered cells provided an appropriate micro-environment that facilitated Zn²⁺ adsorption.

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Study of surface morphology and optical properties of Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films with annealing

Nb₂O₅ films have been deposited on variety of substrates using the sol-gel dip coating technique. As-deposited films on all substrates are amorphous. Films were annealed under controlled ambience at 300, 400 and 600°C for 5 h. As-deposited films on glass substrate show uniform surface structure. The crystal structure and surface topography are found to depend strongly on the annealing temperature and nature of the substrates. The average grain size of 40 nm is observed in films annealed at 300°C. On annealing at 400°C increasing grain size and resulting fusing of them, enhanced surface roughness. Films deposited on NaCl substrates crystallized into a stable monoclinic phase and those deposited on single crystal Si substrates crystallized into hexagonal phase after annealing at 600°C. The as-deposited films show very high transmittance (>90%) in the visible region. The optical band gap is observed to increase from 4.35 eV when the films are in amorphous state to 4.87 eV on crystallization.     

Structural,optical and magnetic properties of Cr doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> powders and thin films

The (In_1?xCr_x)₂O₃ powders as well as thin films of x = 0.03, 0.05 and 0.07 were synthesized using a solid state reaction and an electron beam evaporation technique (on glass substrate), respectively. The influence of Cr doping concentration on structural, optical and magnetic properties of the In₂O₃ samples was systematically studied. The X-ray diffraction results confirmed that all the Cr doped In₂O₃ samples exist cubic structure of In₂O₃ without any secondary phases presence. The chemical composition analyses showed that all the Cr doped In₂O₃ compounds were nearly stoichiometric. The X-ray photoelectron spectroscopy analysis of the Cr doped In₂O₃ thin films showed an increase of oxygen vacancies with Cr concentration and the existence of Cr as Cr³⁺ state in the host In₂O₃ lattice. A small blue shift in the optical band gap was observed in the powder compounds, when the dopant concentration increased from x = 0.03 to x = 0.07. In thin films, the band gap found to increase from 3.63 to 3.74 eV, with an increase of Cr concentration. The magnetic measurements show that the undoped In₂O₃ bulk powder sample has the diamagnetic property at room temperature. And a trace of paramagnetism was observed in Cr doped In₂O₃ powders. However (In_1?xCr_x)₂O₃ thin films (x = 0.00, 0.03, 0.05 and 0.07) samples shows soft ferromagnetism. The observed ferromagnetism in thin films are attributed to oxygen vacancies created during film prepared in vacuum conditions. The ferromagnetic exchange interactions are established between metal cations via free electrons trapped in oxygen vacancies (F-centers).     

Optical and structural properties of ZnO + Zn<Subscript>2</Subscript>TiO<Subscript>4</Subscript> thin films prepared by the sol–gel method

ZnO + Zn₂TiO₄ thin films were obtained by the sol–gel method using precursor solutions with different Ti/Zn ratios in the 0.18–2.13 range. The films were deposited on glass substrates and annealed in an open atmosphere at 550 °C. The oxide was characterized by X-ray diffraction and photoacoustic (PA) spectroscopy. The films were constituted of polycrystalline ZnO for the lowest Ti/Zn ratio (0.18), polycrystalline Zn₂TiO₄ for the 0.70 and 1.0 ratios, and mixes of both oxides for the intermediate ratios (0.32 and 0.50). For the highest ratios studied (1.44 and 2.13), the films were amorphous. The energy band gap (E_g) values were determined from optical absorption spectra, measured by means of the PA technique spectra. E_g varied in the 3.15 eV (ZnO) to 3.70 eV (Zn₂TiO₄) range.