Structure and electrical properties of MnO doped (Ba<Subscript>0.96</Subscript>Ca<Subscript>0.04</Subscript>)(Ti<Subscript>0.92</Subscript>Sn<Subscript>0.08</Subscript>)O<Subscript>3</Subscript> lead free ceramics

In this work, (Ba_0.96Ca_0.04)(Ti_0.92Sn_0.08)O₃–xmol MnO (BCTS–xMn) lead-free piezoelectric ceramics were fabricated by the conventional solid-state technique. The composition dependence (0 ≤ x ≤ 3.0 %) of the microstructure, phase structure, and electrical properties was systematically investigated. An O–T phase structure was obtained in all ceramics, and the sintering behavior of the BCTS ceramics was gradually improved by doping MnO content. In addition, the relationship between poling temperature and piezoelectric activity was discussed. The ceramics with x = 1.5 % sintering at temperature of 1330 °C demonstrated an optimum electrical behavior: d ₃₃ ~ 475 pC/N, k _p ~ 50 %, ε _r ~ 4060, tanδ ~ 0.4 %, P _r ~ 10.3 μC/cm², E _c ~ 1.35 kV/mm, T _C ~ 82 °C, strain ~0.114 % and \(d_{33}^{*}\) ~ 525 pm/V. As a result, we achieved a preferable electric performance in BaTiO₃-based ceramics with lower sintering temperature, suggesting that the BCTS–xMn material system is a promising candidate for lead-free piezoelectric ceramics.     

Synthesis and characterization of nanocrystalline TiO<Subscript>2</Subscript> thin films

Nanocrystalline thin films of TiO₂ have been synthesized by sol gel spin coating technique Thin films of TiO₂ annealed at 700 °C were characterized by X-ray diffraction(XRD), Atomic Force Microscopy, High resolution TEM and Scanning Electron Microscopy (SEM), The XRD shows formation of tetragonal anatase and rutile phases with lattice parameters a = 3.7837 Å and c = 9.5087 Å. The surface morphology of the TiO₂ films showed that the nanoparticles are fine with an average grain size of about 60 nm. Optical studies revealed a high absorption coefficient (10⁴ cm^?1) with a direct band gap of 3.24 eV. The films are of the n type conduction with room temperature electrical conductivity of 10^?6 (Ω cm)^?1.     

Structure,dielectric and ferroelectric properties of lead free (K,Na)(Nb)O<Subscript>3</Subscript>-xBiErO<Subscript>3</Subscript> piezoelectric ceramics

The effect of BiErO₃ (BE) as a doping material on the structural, dielectric and ferroelectric properties of (KNa)NbO₃ ceramics was explored in this research. Co-existence of two phase regions was confirmed in the composition range at x?=?0.5% and x?=?1.0%. The addition of BE content led to a decrease of the grain size and the ceramics became denser. Bulk P–E hysteresis loops were obtained with a maximum polarization of P _max = 30.56 µC/cm² and a remnant polarization of P _r = 25.10 µC/cm², along with a coercive field of E _c  ~ 11.26 kV/cm. The results revealed that a field strain value of ~?0.26 for x?=?0.5% of BE substitution was attained. This presents outstanding piezoelectric and dielectric properties.     

Dielectric relaxation phenomena in the compound: LiCo<Subscript>3/5</Subscript>Mn<Subscript>1/5</Subscript>Cu<Subscript>1/5</Subscript>VO<Subscript>4</Subscript>

Solution-based chemical method has been used to produce LiCo_3/5Mn_1/5Cu_1/5VO₄ ceramics. The formation of the compound is checked by X-ray diffraction analysis and it reveals an orthorhombic unit cell structure with lattice parameters of a = 9.8262 Å, b = 3.0706 Å, c = 14.0789 Å. Field emission scanning electron micrograph indicates a polycrystalline texture of the material with grains of unequal sizes (~0.2 to 3 μm). Complex impedance spectroscopy technique is used to study the dielectric properties. Temperature dependence of dielectric constant (ε _r) at various frequencies exhibits the dielectric anomalies in ε _r at T _c (transition temperature) = 245, 255, 260 and 265 °C with (ε_r)_max. ~458, 311, 214 and 139 for 50, 100, 200 and 500 kHz, respectively. Frequency dependence of tangent loss at various temperatures shows the presence of dielectric relaxation in the material.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Modulus spectroscopy of lead potassium titanium niobate (Pb<Subscript>0.95</Subscript>K<Subscript>0.1</Subscript>Ti<Subscript>0.25</Subscript>Nb<Subscript>1.8</Subscript>O<Subscript>6</Subscript>) ceramics

The modulus Spectroscopy of Lead Potassium Titanium Niobate (Pb_0.95K_0.1Ti_0.25Nb_1.8O₆, PKTN) Ceramics was investigated in the frequency range from 45 Hz to 5 MHz and the temperature, from 30 to 600 °C. XRD analysis in PKTN indicated a orthorhombic structure with lattice parameters a = 18.0809 Å, b = 18.1909 Å and c = 3.6002 Å. The dielectric anomaly with a peak was observed at 510 °C. Variation of ε^I and ε^II with frequency at different temperatures exhibit high values, which reflects the effect of space charge polarization and/or conduction ion motion. The electrical relaxation in ionically conducting PKTN ceramic analyzed in terms of Impedance and Modulus formalism. The Cole–Cole plots of impedance were drawn at different temperatures. The dielectric modulus, which describes the dielectric relaxation behaviour is fitted to the Kohlrausch exponential function. Near the phase transition temperature, a stretched exponential parameter β indicating the degree of distribution of the relaxation time has a small value. From the AC conductivity measurements the activation energy near phase transition temperature (T _C°C) has been found to different from that of the above and below T _C. The temperature dependence of electrical modulus has been studied and results are discussed.     

Strong up-conversion luminescence and electrical properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> multifunctional ceramics by Er<Superscript>3+</Superscript> doping

Novel green-emitting piezoelectric ceramics of SrBi_4?x Er _x Ti₄O₁₅ (SBT-xEr) were prepared. Strong up-conversion with bright green (524 and 548 nm) and a relatively weak red (660 nm) emission bands were obtained under 980 nm excitation at room temperature, which is attributed to the intra 4f–4f electronic transition of (²H_11/2, ⁴S_3/2)–⁴I_15/2 and the transition from ⁴F_9/2 to ⁴I_15/2 of Er³⁺ ions, respectively. Simultaneously, Er³⁺ doping promotes the electrical properties. At 0.8 mol%Er, the optimal electric properties with high Curie temperature of T _c?~527?°C, large remanent polarization of 2P _r?~14.92 μC/cm² and piezoelectric constant of d ₃₃?~17 pC/N was achieved. As a multifunctional material, Er³⁺ doped SBT showed a great potential to be used in 3D-display, bio-imaging, solid state laser and optical temperature sensor.     

High-temperature crystal chemistry of Na<Subscript>6</Subscript>(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>O(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript>

Thermal deformations of Na₆(UO₂)₂O(MoO₄)₄ were studied by high-temperature powder X-ray diffraction. The compound crystallizes in the triclinic system, space group Р\(\bar 1\), a = 7.636(7), b = 8.163(6), c = 8.746(4) Å, α = 72.32(9)°, β = 79.36(4)°, γ = 65.79(5)°, V = 472.74(4) ų. It is stable in the temperature interval 20–700°С. The thermal expansion coefficients (TECs) are α₁₁ = 25.5 × 10^–6, α₂₂ = 7.8 × 10^–6, and α₃₃ = 1.1 × 10^–6 (°C)^–1. The orientation of the TEC pattern relative to the crystallographic axes is a₃₃^Z = 45°, a₃₃^X = 122°, a₂₂^Z = 59°, and a₂₂^X = 66°. The anisotropy of the thermal expansion is due to specific features of the crystal structure of the compound.     

Epitaxial growth and magnetic properties of <Emphasis Type="Italic">h</Emphasis>-LuFeO<Subscript>3</Subscript> thin films

In this paper, the epitaxial hexagonal LuFeO₃ (h-LuFeO₃) thin films with c-axis-oriented single phase, smooth surface were grown on YSZ (111) substrates by pulsed laser deposition method. Furthermore, a structural distortion of increased lattice constant of c is found in the epitaxial h-LuFeO₃ thin films. Moreover, the epitaxial h-LuFeO₃ thin films show room-temperature ferromagnetism. The coercive field and remnant magnetization of the epitaxial h-LuFeO₃ thin film decrease with the increase in the test temperature from 50 to 300 K. The study would be of benefit to the room-temperature single-phase multiferroic materials.     

Magnetic,magnetocaloric properties,and critical behavior in a layered perovskite La<Subscript>1.4</Subscript>(Sr<Subscript>0.95</Subscript>Ca<Subscript>0.05</Subscript>)<Subscript>1.6</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript>

We report the results of magnetic, magnetocaloric properties, and critical behavior investigation of the double-layered perovskite manganite La_1.4(Sr_0.95Ca_0.05)_1.6Mn₂O₇. The compounds exhibits a paramagnetic (PM) to ferromagnetic (FM) transition at the Curie temperature T _C = 248 K, a Neel transition at T _N = 180 K, and a spin glass behavior below 150 K. To probe the magnetic interactions responsible for the magnetic transitions, we performed a critical exponent analysis in the vicinity of the FM–PM transition range. Magnetic entropy change (??S _M) was estimated from isothermal magnetization data. The critical exponents β and γ, determined by analyzing the Arrott plots, are found to be T _C = 248 K, β = 0.594, γ = 1.048, and δ = 2.764. These values for the critical exponents are close to the mean-field values. In order to estimate the spontaneous magnetization M _S(T) at a given temperature, we use a process based on the analysis, in the mean-field theory, of the magnetic entropy change (??S _M) versus the magnetization data. An excellent agreement is found between the spontaneous magnetization determined from the entropy change [(??S _M) vs. M ²] and the classical extrapolation from the Arrott curves (µ₀H/M vs. M ²), thus confirming that the magnetic entropy is a valid approach to estimate the spontaneous magnetization in this system and in other compounds as well.     

The magnetic properties of BiY<Subscript>2</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> nanoparticles doped with Cr ions

BiY₂Cr _x Fe_5?x O₁₂ (x = 0, 0.05, 0.1, 0.2, 0.3) nanocrystals were synthesized by using a sol-gel method. Samples were characterized by the powder X-ray diffraction (XRD), the thermal gravity analysis (TGA) and the differential thermal analysis (DTA), the vibrating sample magnetometer(VSM) and Mössbauer spectrums. The average sizes of the particles were determined by the Scherrer’s formula. The special Ms and Mössbauer spectra of BiY₂Cr _x Fe_5?x O₁₂ nanocrystals are researched at room temperature. It is seen that the special Mss of samples are initially increased with increasing Cr³⁺ content (x < 0.1), and decreased with increasing content of Cr³⁺ ions (x > 0.1).     

Compounds WAl<Subscript>4</Subscript>, WAl<Subscript>3</Subscript>, W<Subscript>3</Subscript>Al<Subscript>7</Subscript>, and WAl<Subscript>2</Subscript> and Al-W-N combustion products

X-ray diffraction data are presented for combustion products in the Al-W-N system. New, nonequilibrium intermetallic compounds have been identified, their diffraction patterns have been indexed, and their unit-cell parameters have been determined. The phases α-and β-WAl₄ are shown to exist in three isomorphous forms, differing in unit-cell centering. The phases α′-, α″-, and α?-WAl₄ are monoclinic, with a ₀ = 5.272 Å, b ₀ = 17.770 Å, c ₀ = 5.218 Å, β = 100.10°; point groups C12/c1, A12/n1, I12/a1, respectively. The phases β′-, β″-, and β?-WAl₄ are monoclinic, with a ₀ = 5.465 Å, b ₀ = 12.814 Å, c ₀ = 5.428 Å, β = 105.92°; point groups A112/m, B112/m, I112/m, respectively. The compounds WAl₂ and W₃Al₇, identified each in two isomorphous forms, differ in cell metrics (doubling) but possess the same point group: P222. WAl ₂ ^′ : orthorhombic, a ₀ = 5.793 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. WAl ₂ ^″ : orthorhombic, a ₀ = 11.586 Å, b ₀ = 3.740 Å, c ₀ = 6.852 Å. W₃Al ₇ ^′ : orthorhombic, Pmm2, a ₀ = 6.225 Å, b ₀ = 4.806 Å, c ₀ = 4.437 Å. W₃Al ₇ ^″ : orthorhombic, Pmm2, a ₀ = 12.500 Å, b ₀ = 4.806 Å, c ₀ = 8.874 Å. The new phase WAl₃: triclinic, P1, a ₀ = 8.642 Å, b ₀ = 10.872 Å, c ₀ = 5.478 Å, α = 104.02°, β = 64.90°, γ = 107.15°.     

Microstructure and electrical properties of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>NbO<Subscript>3</Subscript> lead-free piezoelectric ceramics sintered in low pO<Subscript>2</Subscript> atmosphere

Pure K_0.5Na_0.5NbO₃ lead-free piezoelectric ceramics without any dopants/additives were sintered at various temperatures (950–1125 °C) in low pO₂ atmosphere (pO₂?~?10^?6 atm). All ceramics exhibit high relative densities (>?94%) and low weight loss (<?0.6%). Compared to the ceramics sintered in air, the ceramics sintered in low pO₂ exhibit improved electrical properties. The piezoelectric constant d₃₃ and converse piezoelectric constant d₃₃* are 112 pC/N and 119 pm/V, respectively. The ceramics show typical ferroelectric behavior with the remnant polarization of 21.6 µC/cm² and coercive field of 15.5 kV/cm under measurement electric field of 70 kV/cm. The good electrical properties of the present samples are related to the suppression of volatility of the alkali cations during the sintering process in low pO₂ atmosphere.     

Scaling behavior of dynamic hysteresis in Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics

The scaling behavior of dynamic hysteresis was investigated in Bi_3.15Nd_0.85Ti₃O₁₂ bulk ceramics at a frequency of 1–1000 Hz and an external electric field amplitude of 79–221 kV/cm. The scaling behavior at low amplitude (E ₀ ≤ 114 kV/cm) takes the form of \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.7}\) for low frequency (f ≤ 200 Hz) and \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.22}\) for high frequency (f > 200 Hz), where \(\langle A \rangle\) is the area of hysteresis loop and f and E ₀ are frequency and amplitude of external electric field, respectively. At high amplitude (E ₀ > 114 kV/cm), we obtain \(\langle A \rangle \propto f^{0.011} E_{0}^{1.163}\) at low frequency and \(\langle A \rangle \propto f^{ - 0.015} E_{0}^{0.7}\) at high frequency. At low E ₀, the contribution to the scaling relation mainly results from reversible domain switching, while at high E ₀ reversible and irreversible domain switching concurrently contribute to the scaling relation.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Crystal structure of [CH<Subscript>3</Subscript>NH<Subscript>3</Subscript>][(UO<Subscript>2</Subscript>)(H<Subscript>2</Subscript>AsO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of a previously unknown compound [CH₃NH₃][(UO₂)(H₂AsO₄)₃] was solved by direct methods and refined to R ₁ = 0.038 for 3041 reflections with |F _hkl | >-4σ |F _hkl |. The compound crystallizes in the monoclinic system, space group P2₁/c, a = 8.980(1), b = 21.767(2), c = 7.867(1) Å, β = 115.919(5)°, V = 1383.1(3) ų, Z = 4. In the structure of the compound, pentagonal bipyramids of uranyl ions, sharing bridging atoms with tetrahedral [H₂AsO₄]^? anions, form strongly corrugated layered complexes [(UO₂)(H₂AsO₄)₃]^? arranged parallel to the (100) plane. The protonated methylamine molecules [CH₃NH₃]⁺ form unidimensional tapelike packings parallel to the c axis and linked by hydrophilic-hydro-phobic interactions. The topology of the layered uranyl arsenate complex [(UO₂)(H₂AsO₄)₃]^? is unusual for uranyl compounds and was not observed previously. A specific feature of this topology is the presence of monodentate arsenate “branches” arranged within the layer.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Influence of coronene addition on some superconducting properties of bulk MgB<Subscript>2</Subscript>

This study reports the effect of coronene (C₂₄H₁₂) addition on some superconducting properties such as critical temperature (T_c), critical current density (J_c), flux pinning force density (F_p), irreversibility field (H_irr), upper critical magnetic field (H_c2), and activation energy (U₀), of bulk MgB₂ superconductor by means of magnetisation and magnetoresistivity measurements. Disk-shaped polycrystalline MgB₂ samples with varying C₂₄H₁₂ contents of 0, 2, 4, 6, 8, 10 wt%, were produced at 850 °C in Ar atmosphere. The obtained results show an increase in field-J_c values at 10 and 20 K resulting from the strengthened flux pinning, and a decrease in critical temperature (T_c) because of C substitution into MgB₂ lattice, with increasing amount of C₂₄H₁₂ powder. The H_c2(0) and H_irr(0) values are respectively found as 144, 181, 172 kOe, and 128, 161, 145 kOe for pure, 4 wt% and 10 wt% C₂₄H₁₂ added samples. The U₀ depending on the magnetic field curves were plotted using thermally activated flux flow model. The maximum U₀ values are respectively obtained as 0.20, 0.23 and 0.12 eV at 30 kOe for pure, 4 wt% and 10 wt% C₂₄H₁₂ added samples. As a result, the superconducting properties of bulk MgB₂ at high fields was improved using C₂₄H₁₂, active carbon source addition, because of the presence of uniformly dispersed C particles with nanometer order of magnitude, and acting as effective pinning centres in MgB₂ structure.     

Preparation of high-surface-area activated carbon from <Emphasis Type="Italic">Zizania latifolia</Emphasis> leaves by one-step activation with K<Subscript>2</Subscript>CO<Subscript>3</Subscript>/rarefied air

An activated carbon (AC) with high-porosity was prepared from Zizania latifolia leaves by a one-step method combining chemical and physical activation. K₂CO₃ was employed as a chemical reagent, and air as a physical agent. During the activation, several key parameters were discussed, including the effects of activation temperature, K₂CO₃ impregnation ratio, amount of introduced air on the surface area and pore volumes evolution of the ACs derived from the Zizania latifolia leaves. The synergistic effect between the chemical agent and the physical agent was also investigated. Under optimal activation conditions, the as-synthesized AC attained a maximum surface area up to 2481 m²/g, with 1.21 cm³/g pore volume, and it had a micro/meso porosity developed by the combining activation. The crystal sizes of the as-synthesized AC along the a- and c-axes were about 5 nm and 1–2 nm, respectively. The average thickness of the crystallites is 3–4 layers with about 0.37 nm interlayer spacing.     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.