Eco-friendly method to synthesize and characterize 2D nanostructured (1,2-bis(diphenyl-phosphino)ethyl) tungsten tetracarbonyl methyl red/copper oxide di-layer thin films

Three-layer thicknesses (\({T}_{1 }= 50\), \({T}_{2 }= 75\) and \({T}_{3 }= 100\) nm) of 1,2-bis(diphenylphosphino)ethyl tungsten tetracarbonyl methyl red (DPE-W-MR) were deposited onto the CuO thin film (50 nm) to produce DPE-W-MR/CuO di-layer thin films by sol–gel spin-coating technique. The composition and the chemical structure of the as-prepared thin films were characterized using various techniques including elemental analysis, Fourier transform infrared spectroscopy, \(^{1}\hbox {H}\)-NMR and X-ray diffraction (XRD). Scanning electron microscopy was used to investigate the size and shape of the CuO nanoparticles and the fabricated thin films. The films are crystalline as evidenced by the XRD pattern and DPE-W-MR has an orthorhombic crystal system. The crystallite size was calculated from an analysis of the line broadening features using the Scherrer formula; the average crystallite sizes of DPE-W-MR/CuO di-layer thin films are 52.92, 56.24 and 72.26 nm for \({T}_{1}\), \({T}_{2}\) and \({T}_{3}\), respectively. Thermogravimetric analysis and the thermal curve of DPE-W-MR complex were studied. Optical properties of DPE-W-MR/CuO di-layer thin films are discussed. The optical band gap energies of DPE-W-MR di-layer thin films/CuO decreased (2.25, 2.1 and 1.88 eV) as the film thickness increased (from \({T}_{1}\) to \({T}_{3})\). Based on the optical results and the quantum confinement effects, the DPE-W-MR/CuO di-layer thin films may be candidates as semiconductor materials for optoelectronic devices.     

Influence of Thermal Annealings in Argon on the Structural and Thermochromic Properties of $$\mathrm{MoO}_{3}$$ Thin Films

The effect of thermal annealing in an inert atmosphere (argon) on the structural and thermochromic properties of \(\hbox {MoO}_{3}\) thin films was investigated. \(\hbox {MoO}_{3}\) thin films were deposited by thermal evaporation in vacuum of \(\hbox {MoO}_{3}\) powders. X-ray diffraction patterns of the films showed the presence of the monoclinic Magneli phase \(\hbox {Mo}_{9}\hbox {O}_{26}\) for annealing temperatures above \(250\,{^{\circ }}\hbox {C}\). Absorbance spectra of the films annealed in argon indicated that their thermochromic response increases with the annealing temperature in the analyzed range (23 \({^{\circ }}\hbox {C}\)–300 \({^{\circ }}\hbox {C}\)), a result opposite to the case of thermal annealings in air, for which case the thermochromic response shows a maximum value around 200 \({^{\circ }}\)C–225 \({^{\circ }}\)C and decreases for higher temperatures. These results are explained in terms of a higher density of oxygen vacancies formed upon thermal treatments in inert atmospheres.     

Structural,microstructural and optical properties of $$\hbox {Cu}_{2}\hbox {ZnSnS}_{4}$$ thin films prepared by thermal evaporation: effect of substrate temperature and annealing

Thin films of \(\hbox {Cu}_{2}\hbox {ZnSnS}_{4}\) (CZTS), a promising solar cell absorber, were grown by thermal evaporation of ZnS, Sn and Cu precursors and subsequent annealing in sulphur atmosphere. Two aspects are chosen for investigation: (i) the effect of substrate temperature (\(T_{\mathrm{S}})\) used for the deposition of precursors and (ii) (\(\hbox {N}_{2}{+}\hbox {S}_{2})\) pressure during annealing, to study their impact on the growth of CZTS films. X-ray diffraction analysis of these films revealed the structure to be kesterite with (112) preferred orientation. Crystallite size is found to slightly increase with increase in \(T_{\mathrm{S}}\) as well as pressure during annealing. From optical absorption studies, the direct optical band gap of CZTS films is found to be \({\sim }\)1.45 eV. Room temperature electrical resistivity of the films obtained on annealing the stacks at 10 and 100 mbar pressures is found to be in the ranges 25–55 and 5–25 \(\Omega \) cm, respectively, depending on \(T_{\mathrm{S}}\). Films prepared by annealing the stack deposited at 300\({^{\circ }}\)C under 100 mbar pressure for 90 min are slightly Cu-poor and Zn-rich with compact grain morphology.     

Effect of annealing treatment on optical properties and microstructural variation of $$\hbox {WO}_{3}/\hbox {Ag}/\hbox {WO}_{3}$$ multilayer nano-films

Structural and optical properties of \(\text {WO}_{3}/\text {Ag}/\text {WO}_{3}\) nano-multilayer composites were investigated for heat mirror applications. \(\text {WO}_{3}/\text {Ag}/\text {WO}_{3}\) thin films were fabricated through a physical vapour deposition method by using electron-beam evaporation at the vacuum chamber at 10\(^{-5}\) Torr. \(\text {WO}_{3}\) nano-layer was fabricated at 40 nm. Annealing treatment was carried out at 100, 200, 300 and 400\(^{\circ }\)C for 1 h after the deposition of first layer of \(\text {WO}_{3}\) on the glass. On \(\text {WO}_{3}\) film, Ag nano-layers with 10, 12 or 14 nm thickness were deposited. Individual layers morphology was investigated using atomic force microscopy (AFM) and deduced that a smoother layer can be achieved after the annealing at 300\(^{\circ }\)C. Ellipsometry analysis was executed to determine both layers, Ag film thickness and inter-diffusion between the \(\text {WO}_{3}\)–Ag–\(\text {WO}_{3}\) layers. It was inferred that there was almost no interfering among the \(\text {WO}_{3}\)–\(\text {WO}_{3 }\) layers in the samples with 12 and 14 nm Ag thickness; while silver was deposited on the annealed \(\text {WO}_{3}\) layer at 300\(^{\circ }\)C. UV–visible spectrophotometer showed that the annealing treatment of the first \(\text {WO}_{3}\) layer enhanced the transparency of films in the visible region. The innovations of the present study have been based on the annealing of the films and finding an optimum thickness for the Ag film at 12–14 nm. Heat mirrors efficiency was assessed according to the principle of their optical behaviour and optimum performance obtained for 14 nm of Ag film, deposited on annealed tungsten oxide at 300\(^{\circ }\)C.     

Study of substrate temperature and copper doping effects on structural,electrical and optical properties of Cu-doped and undoped ZnO thin films

Undoped and Cu-doped ZnO (ZnO:Cu) thin films were prepared using magnetron co-sputtering. Effects of substrate temperature \(T_{s}\) on their structural, electrical and optical properties were comparatively investigated using X-ray diffraction, atom force microscopy, and ultraviolet visible spectrophotometer. ZnO:Cu thin films with different doping content were prepared and studied in order to investigate the effects of Cu-doping content. The results show that all the films exhibit a single phase (002)-oriented hexagonal wurtzite structure. Higher \(T_{s}\) enhances the crystallinity and reduces the compressive stress of the films. Cu-doping and increasing \(T_{s}\) lead to rougher surface and larger granules. The resistivity of both the ZnO and ZnO:Cu films increases with \(T_{s}\). Interestingly, optical band gap \(E_{g}\) of ZnO:Cu films increases significantly with \(T_{s}\), while \(E_{g}\) of undoped film is not obviously influenced by \(T_{s}\). Cu-doping content is an important factor affecting the physical properties of ZnO:Cu thin films. In our experiments, Cu-doping composition sightly decreases with \(T_{s}\) increasing. Cu-doping reduces the resistivity, leads to the red-shift of absorption edge, and narrows \(E_{g}\) of ZnO thin films.     

Measurement of Out-of-Plane Thermal Conductivity of Epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-{\delta }}$$ Thin Films in the Temperature Range from 10 K to 300 K by Photothermal Reflectance

We measured the out-of-plane (c-axis) thermal conductivity of epitaxially grown \(\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-{\delta }}\) (YBCO) thin films (250 nm, 500 nm and 1000 nm) in the temperature range from 10 K to 300 K using the photothermal reflectance technique. The technique enables us to determine the thermal conductivity perpendicular to a thin film on a substrate by curve fitting analysis of the phase lag between the thermoreflectance signal and modulated heating laser beam in the frequency range from \(10^{2}\,\hbox {Hz}\) to \(10^{6}\,\hbox {Hz}\). The uncertainties of measured thermal conductivity of all samples were estimated to be within \({\pm }9\,\%\) at 300 K, \({\pm }12\,\%\) at 180 K, \({\pm }16\,\%\) at 90 K and \({\pm }20\,\%\) below 50 K. The experimental results show that the thermal conductivity is dependent on the thickness of the thin films across the entire temperature range. We also observed that the thermal conductivity of the present YBCO thin films showed \(T^{1.4}\) to \(T^{1.6}\) glass-like dependence below 50 K, even though the films are crystalline solids. In order to explain the reason for this temperature dependence, we attempted to analyze our results using phonon relaxation times for possible phonon scattering models, including stacking faults, grain boundary and tunneling states scattering models.     

Design and Characterisation of Titanium Nitride Subarrays of Kinetic Inductance Detectors for Passive Terahertz Imaging

We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature \(T_\mathrm{c}\), sheet resistance \(R_\mathrm{s}\) and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power \(\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}\), which is promising for passive terahertz imaging applications.     

Study of optical properties of potassium permanganate ($$\hbox {KMnO}_{4}$$) doped poly(methylmethacrylate) (PMMA) composite films

We have developed films of pure polymethylmethacrylate (PMMA) (0.5, 1, 2 and 5%) and potassium permanganate \((\hbox {KMnO}_{4})\)-doped PMMA composite films of thickness (\(\sim 100\, \upmu \hbox {m}\)) using the solution-cast technique. To identify the possible change that happen to the PMMA films due to doping, the optical properties were investigated for different concentrations of \(\hbox {KMnO}_{4}\) by recording the absorbance (A) and transmittance (\(T\%\)) spectra of these films using UV–Vis spectrophotometer in the wavelength range of 300–1100 nm. From the data obtained from the optical parameters viz. absorption coefficient (\(\alpha \)), extinction coefficient (\(\kappa \)), finesse coefficient (F), refractive index (\(\eta \)), real and imaginary parts of dielectric constant (\(\varepsilon _{\mathrm{r}}\) and \(\varepsilon _{\mathrm{i}})\) and optical conductivity (\(\sigma \)) were calculated for the prepared films. The indirect optical band gap for the pure and the doped-PMMA films were also estimated.     

Characterization and optical properties of $$\hbox {Pr}_{2}\hbox {O}_{3}$$-doped molybdenum lead-borate glasses

\(\hbox {Pr}^{3+}\) doped molybdenum lead-borate glasses with the chemical composition 75PbO?[25–(x \(+\) y)\(\hbox {B}_{2}\hbox {O}_{3}]\)–\(y\hbox {MoO}_{3}\)–\(x\hbox {Pr}_{2}\hbox {O}_{3}\) (where \(x = 0.5\) and 1.0 mol% and \(y = 0\) and 5 mol%) were prepared by conventional melt-quenching technique. Thermal, optical and structural analyses are carried out using DSC, UV and FTIR spectra. The physical parameters, like glass transition \((T_{\mathrm{g}})\), stability factor \((\Delta T)\), optical energy band gap \((E_{\mathrm{gopt}})\), of these glasses have been determined as a function of dopant concentration. The \({T}_{\mathrm{g}}\) and optical energy gaps of these glasses were found to be in the range of 290–350\({^{\circ }}\hbox {C}\) and 2.45–2.7 eV, respectively. Stability of the glass doped with \(\hbox {Pr}^{3+}\) is found to be moderate (\(\sim \)40). The results are discussed using the structural model of Mo–lead-borate glass.     

Macroscopic Thermal Rectification Device Using Vanadium Dioxide Thin Film

A thermal rectifier is a device in which heat flows in the forward direction but very little can flow in the opposite direction. Because the heat current can be controlled, the device is promising for future practical applications. In this study, the experiments were performed to investigate temperature-gated thermal rectification using macroscopic vanadium dioxide \((\hbox {VO}_{2})\) thin films deposited on an asymmetric substrate. The \(\hbox {VO}_{2}\) phase transition, occurred near 340 K, changed both the electrical and thermal properties. Therefore, we used these properties to investigate the thermal rectification. The \(\hbox {VO}_{2}\) thin films were prepared on cover glass substrates by RF sputtering with a \(\hbox {VO}_{2}\) disk target at \(500~{^{\circ }}\hbox {C}\). The morphology of the thin films was investigated. Silver paste and a copper band were used to connect the films with a heater and temperature controller. We observed thermal rectification in the temperature range of T = 310 K–370 K in several film samples obtained with different degrees of asymmetry, deposition times, and post-annealing times. It is found that \(60{^{\circ }}\) triangular-shaped samples have a rectification coefficient of 1.14, and the rectification coefficient is increased with the increasing of the angle. In addition, the two rectangular-shaped samples have the coefficient of 1.06, which could also be enhanced by increasing the ratio of width.     

Gas sensing behaviour of cerium oxide and magnesium aluminate composites

Composites of cerium oxide (\(\hbox {CeO}_{2}\)) and magnesium aluminate (\(\hbox {MgAl}_{2}\hbox {O}_{4}\)) were prepared by the molten salt synthesis (MSS) method at 1130 K. The composite samples were named as MA, MAC0.07 and MAC0.14 (at \(\hbox {CeO}_{2}\): 0, 0.07 and 0.14 g in \(\hbox {MgAl}_{2}\hbox {O}_{4}\), respectively) and these were characterized by X-ray diffraction and energy-dispersive X-ray analyses. It is seen that the microstructure of the composite samples are quite similar except for a small increase in particle size. The energy-dispersive X-ray analyses provide the presence of concentration of Ce, Mg, Al and O in the composite. Scanning electron microscope, coupled with energy-dispersive X-ray analysis (SEM-EDAX) was used to identify the morphology, microstructure and elemental composition of the prepared samples. The decomposition and dissociation reactions of the precursors were determined using differential thermal and thermogravimetric analysis (TGA). A lone pair of the electron state was identified from the electro paramagnetic resonance spectrum. An optical energy band gap of 3.3 eV was calculated from the UV–Vis absorbance spectra. The gas response to changes in oxygen (\(\hbox {O}_{2}\)), carbon monoxide (CO) (at 0.5, 1.0 and 1.5 bar) and ethanol (at 50 and 100 ppm) was quantitatively analysed in all the samples at different operating temperatures (300–500 K). The magnitude of the temperature varied linearly regardless of the gas pressure inside the chamber, by increasing the supply in the heating pad, mounted below the sensor sample. The composite samples indicate a good response to different gases with detection of the smallest change in gas pressure.     

Crystal structure,optical behavior and electrical conduction of the new organic–inorganic compound CH<Subscript>3</Subscript>NH<Subscript>3</Subscript>CdI<Subscript>3</Subscript>

A new organic–inorganic compound CH₃NH₃CdI₃ (MACdI₃) was prepared by solvent diffusion method. Single crystal diffraction results showed that MACdI₃ had a monoclinic system with P2₁/c space group at room temperature. UV–Visible absorption spectra revealed that the optical band gap (\({E_g}\)) of 3.45 eV is in agreement with the theoretical value. Band structure and density of states calculations indicated that the valence band is mainly iodine 5p in character and the conduction band is the interaction between Cd 4d in character and iodine 5p states. The temperature dependent dielectric constant and alternating current (AC) conduction analysis displayed a phase transition at about 348 K, which could be confirmed by temperature dependent Raman spectra. AC conduction results demonstrated that the conduction in MACdI₃ was attributed to correlated barrier hopping at 308–348 K and non-overlapping small polaron tunneling at 348–398 K.     

Synthesis of $$\hbox {Ag}_{2}\hbox {Se}$$–graphene–$$\hbox {TiO}_{2} $$TiO2 nanocomposite and analysis of photocatalytic activity of $$\hbox {CO}_{2}$$CO2 reduction to $$\hbox {CH}_{3}\hbox {OH}$$CH3OH

The present work deals with the development of a new ternary composite, \(\hbox {Ag}_{2}\hbox {Se}\)–\(\hbox {G}\)–\(\hbox {TiO}_{2}\), using ultrasonic techniques as well as X-ray diffraction (XRD), scanning electron microscopy (SEM), high transmission electron microscopy (HTEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and UV–Vis diffuse reflectance spectra (DRS) analyses. The photocatalytic potential of nanocomposites is examined for \(\hbox {CO}_{2}\) reduction to methanol under ultraviolet (UV) and visible light irradiation. \(\hbox {Ag}_{2}\hbox {Se}\)–\(\hbox {TiO}_{2}\) with an optimum loading graphene of 10 wt% exhibited the maximum photoactivity, obtaining a total \(\hbox {CH}_{3}\hbox {OH}\) yield of 3.52 \(\upmu \hbox {mol}\,\hbox {g}^{-1}\,\hbox {h}^{-1}\) after 48 h. This outstanding photoreduction activity is due to the positive synergistic relation between \(\hbox {Ag}_{2}\hbox {Se}\) and graphene components in our heterogeneous system.     

Influence of $$\hbox {TiO}_{2}$$ particle size and conductivity of the CuCrO$$_{2}$$2 nanoparticles on the performance of solid-state dye-sensitized solar cells

Solid-state dye-sensitized solar cells have been fabricated with mesoporous \(\hbox {TiO}_{2 }\) photoanode and N719 dye as photosensitizer. First, \(\hbox {TiO}_{2}\) and non-doped, Zn- and Mg-doped CuCrO\(_{2}\) nanoparticles have been synthesized by sol–gel method. In addition, the \(\hbox {TiO}_{2}\) pastes have been prepared through Pechini-type sol–gel method. The effect of \(\hbox {TiO}_{2}\) particle size, mesoporous \(\hbox {TiO}_{2}\) photoanode thickness and solid-state electrolyte thickness on the efficiency of the fabricated devices has been investigated. Our results show that in spite of the low amount of dye loading for photoanode with large \(\hbox {TiO}_{2}\) nanoparticles (80–180 nm), the dye-sensitized solar cell made from it has higher efficiency than that constructed from the photoanode comprising of small particles about 10–15 nm in size. The higher efficiency is attributed to the longer diffusion length of electrons because of a better electron transport and penetration of a large amount of \(\hbox {CuCrO}_{2 }\) nanoparticles in the porous structure of \(\hbox {TiO}_{2}\) photoanode. By using the doped \(\hbox {CuCrO}_{2}\) nanoparticles, the efficiency has been increased from 0.027% for \(\hbox {TiO}_{2}\)/N719 dye/CuCrO\(_{2}\) to 0.033% for \(\hbox {TiO}_{2}\)/N719 dye/CuCrO\(_{2}\):Zn and further increased to 0.042% for \(\hbox {TiO}_{2}\)/N719 dye/CuCrO\(_{2}\):Mg. The efficiency enhancement by doping is ascribed to the conductivity improvement due to the presence of impurity atoms.     

Crystal structure,thermal behaviour,vibrational spectroscopy and optical properties of new compounds K$$_{}$$Ca(HAsO$$_{4}$$4)$$_{}\cdot $$·H$$_{}$$O with kröhnkite-type chain

The new kröhnkite compound called potassium calcium-bis-hydrogen arsenate dihydrate K\(_{2}\)Ca(HAsO\(_{4})_{2}\cdot \)2H\(_{2}\)O was obtained by hydrothermal method and characterized by X-ray diffraction, infrared spectroscopy, Raman scattering, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) analysis and optical (photoluminescence and absorption) properties. It crystallizes in the triclinic space group P\(\bar{1}\) and unit cell parameters \(a = 5.971(3)\) Å, \(b =6.634(3)\) Å, \(c = 7.856(4)\) Å, \(\alpha =104.532(9)\) \(^{\circ }\), \(\beta = 105.464(9)\) \(^{\circ }\) and \(\gamma = 109.698(9)\) \(^{\circ }\). The structure of K\(_{2}\)Ca(HAsO\(_{4})_{2}\cdot \)2H\(_{2}\)O built up from this infinite, (Ca(HAsO\(_{4})_{2}\)(H\(_{2}\)O)\(_{2})^{2+}\), was oriented along an axis resulting from the association of CaO\(_{6}\) octahedra alternating with each two HAsO\(_{4}\) tetrahedra by sharing corners. Each potassium atom links two adjacent chains by three oxygen atoms of HAsO\(_{4}\) tetrahedra. TGA and DSC have shown the absence of phase transition. The existence of vibrational modes corresponding to the kröhnkite is identified by the IR and Raman spectroscopies in the frequency ranges of 400–4000 and 20–4000 cm\(^{-1}\), respectively. The photoluminescence measurement show one peak at 507 nm, which is attributed to band–band (free electron–hole transitions) and (bound electron–hole transitions) emissions within the AsO\(_{4}\) inorganic part.     

Electrical and Thermal Characteristics of the Insulator–Metal Transition in Crystalline $$\hbox {V}_{2}\hbox {O}_{5}$$ Films

The electrical and thermal properties with respect to the crystallization in \(\hbox {V}_{2}\hbox {O}_{5}\) thin films were investigated by measuring the resistance at different temperatures and applied voltages. The changes in the crystal structure of the films at different temperatures were also explored using Raman measurements. The thermal diffusivity of the crystalline \(\hbox {V}_{2}\hbox {O}_{5}\) film was measured by the nanosecond thermoreflectance method. The microstructures of amorphous and crystalline \(\hbox {V}_{2}\hbox {O}_{5}\) were observed by SEM and XRD measurements. The temperature-dependent Raman spectra revealed that a structural phase transition does not occur in the crystalline film. The resistance measurements of an amorphous film indicated semiconducting behavior, whereas the resistance of the crystalline film revealed a substantial change near \(250\,{^{\circ }}\hbox {C}\), and Ohmic behavior was observed above \(380\,{^{\circ }}\hbox {C}\). This result was due to the metal–insulator transition induced by lattice distortion in the crystalline film, for which \(T_{\mathrm{c}}\) was \(260\,{^{\circ }}\hbox {C}\). \(T_{\mathrm{c}}\) of the film decreased from 260 \({^{\circ }}\hbox {C}\) to \(230\,{^{\circ }}\hbox {C}\) with increasing applied voltage from 0 V to 10 V. Furthermore, the thermal diffusivity of the crystalline film was \(1.67\times 10^{-7}\,\hbox {m}^{2}\cdot \hbox {s}^{-1}\) according to the nanosecond thermoreflectance measurements.     

Structural,morphological, optical and electrical properties of spray deposited zinc doped copper oxide thin films

Nanostructured spray deposited zinc (Zn) doped copper oxide (CuO) thin films were characterized by employing X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX), atomic force microscopy (AFM) and ultraviolet–visible–near infrared (UV–Vis–NIR) spectroscopy. XRD patterns of CuO and Zn doped CuO thin films indicated monoclinic structure with the preferred orientation along \(\left( {\bar 111} \right)\) plane. Maximum value of crystallite size is found about 28.24 nm for 5 at% Zn doped CuO thin film. In FESEM images, nanoparticles were observed around the nucleation center. EDX analysis confirms the presence of all component elements in CuO and Zn doped CuO thin films. Analysis by AFM of CuO and Zn doped CuO thin films figured out decrease of surface roughness due to Zn doping. UV–Vis–NIR spectroscopy showed that CuO and Zn doped CuO thin films are highly transparent in the NIR region. Optical band gap of CuO thin films decreased with substrate temperature and that of Zn doped CuO thin films increased with Zn concentration. Refractive index of CuO and Zn doped CuO thin films raised with photon wavelength and became constant in the NIR region. 5 at% Zn doped CuO thin film showed the highest optical conductivity and the lowest electrical resistivity at room temperature.     

Cation substitution induced blue-shift of optical band gap in nanocrystalline $$\hbox {Zn}_{(1-x)} \hbox {Ca}_{x}\hbox {O}$$ thin films deposited by sol–gel dip coating technique

Transparent nanocrystalline \(\hbox {Zn}_{(1-x)}\hbox {Ca}_{x}\hbox {O }(0 \le x \le 0.20)\) thin films were deposited on glass substrates by sol–gel dip coating method. The X-ray diffraction (XRD) pattern revealed the polycrystalline nature of the films with hexagonal wurtzite structure and confirmed the non-existence of the secondary phase corresponding to CaO indicating the monophasic nature of the deposited films. The crystallinity of the films deteriorated with higher dopant concentration due to the segregation or separation of dopant ions in grain boundaries. The lattice parameters and the unit cell volume increased to a higher Ca-dopant concentration. This was due to the successful incorporation of \(\hbox {Ca}^{2+}\) ions with larger ionic radius in the host zinc oxide (ZnO) lattice. The optical transmittance spectra of the samples showed transmittances above 60% in the visible spectral range and the absorption edge in the near ultra-violet region got blue-shifted with cation substitution. The estimated optical energy gaps confirmed the band gap widening with increase in Ca-dopant concentration. The calculated values increased from 3.30 eV for undoped ZnO to 3.73 eV for \(\hbox {Zn}_{0.8}\hbox {Ca}_{0.2}\hbox {O}\) thin films giving 13.03% enhancement in the energy gap value due to the electronic perturbation caused by cation substitution as well as deterioration in crystallinity.     

Interplay of the influence of oxygen partial pressure and rf power on the properties of rf-magnetron-sputtered AZO thin films

The complex interplay between the influence of oxygen partial pressure and that of rf power on the structural, electrical and optical properties of rf-magnetron-sputtered aluminium-doped zinc oxide, AZO, thin films is illustrated. The dependence of film electrical resistance and interplanar spacing of film crystallites on rf power seems to be different at higher oxygen partial pressure values than at lower ones. Film preparation was performed at room temperature (without extra heating) and low pressure p \(=\) 0.5 mTorr, varying the rf power density between P \(=\) 0.57 and 2.83 W \(\hbox {cm}^{-2}\) at different relative oxygen partial pressure values. An explanation of film properties has been sought in terms of changes in the chemical properties of the films due to the bombardment of the films during film formation with negative oxygen ions.     

Thermally Stimulated Luminescence of $$\hbox {Y}_{2}{\mathrm {Si}}{\mathrm {O}}_{5}{:}~{\mathrm {Ce}}^{3+}$$ Commercial Phosphor Powder and Thin Films

We report on the thermoluminescence (TL) properties of \(\hbox {Y}_{2}{\mathrm {Si}}{\mathrm {O}}_{5}{:}\,{\mathrm {Ce}}^{3+}\) phosphor powder and thin films. For the phosphor powder, the TL intensity increases with an increase in UV dose for up to 20 min and then decreases. The TL intensity peak shifts slightly to higher-temperature region at relatively high heating rates, but with reduced peak intensity. Important TL kinetic parameters, such as the activation energy (E) and the frequency factor (s), were calculated from the glow curves using a variable heating rate method, and it was found that the glow peaks obey first-order kinetics. For the films, broad TL emissions over a wide temperature range with reduced intensity relative to that of the powder were observed. The maxima of the TL glow peaks of the films deposited in oxygen ambient and vacuum shift toward higher temperature relative to the TL peak position of the film deposited in an argon environment. Vacuum environment resulted in the formation of a deep trap relative to oxygen and argon environments. Furthermore, the structure of \(\hbox {Y}_{2}{\mathrm {Si}}{\mathrm {O}}_{5}{:}\,{\mathrm {Ce}}^{3+}\) phosphor powder transformed from \({x}_{2}\)-monoclinic polycrystalline phase to \({x}_{1}\)-monoclinic polycrystalline phase, for deposition at low substrate temperature.