Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN<Subscript>x</Subscript> interlayer

In this study, 4.5 μm thick GaN films with graded Al_xGa_1?xN/AlN buffer and SiN_x interlayer were prepared on 6H–SiC substrates by metal–organic chemical vapor deposition. To determine the effects of SiN_x interlayer on epitaxial quality and stress state of GaN films, a series of comparative experiments were carried out by changing the deposition time and the insert location of SiN_x interlayer. By optimizing growth conditions of SiN_x interlayer, the full width at half maximum values of \( (0002) \) and \( (10\bar{1}2) \) rocking curves of GaN films were improved to 142 and 170 arcsec, respectively. A crack-free GaN film with a small root-mean-squared roughness of 0.21 ± 0.02 nm was achieved. Simultaneously, the reduction in threading dislocation density of GaN films was confirmed by using wet etching method. In addition, stress values in GaN films were investigated by Raman and low-temperature photoluminescence spectra, which indicated that the lower tensile stress in GaN film, the higher the film’s crystallinity.     

Synthesis,photoluminescence properties of Sr<Subscript>1.95</Subscript>Ba<Subscript>0.05</Subscript>CeO<Subscript>4</Subscript>:Eu<Superscript>3+</Superscript> for LED applications

The Sr_1.95Ba_0.05 CeO₄:Eu³⁺ phosphors are synthesized by the solid-state reaction method. The samples are characterized using X-ray diffraction (XRD), diffuse reflectance spectroscopy and photoluminescence (PL) spectra. The XRD results reveal that the synthesized phosphors are genuine crystalline and belong to the orthorhombic structure. The intense PL emission is optimized from the PL spectra at various doping concentrations of europium ions. The results indicates that the phosphor can be effectively excited under 264 nm wavelength producing on intense emission spectrum of the synthesis material at 484 nm (blue region). The color purity of the phosphor is confirmed by CIE coordinates (x = 0.217, y = 0.265). The experimental data indicate that the prepared phosphors can be used as blue-emitting material in the field of illuminations and display devices.     

Formation of silicon nanocrystals in SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> film on PET substrates using femtosecond laser pulses

The formation of Si nanoclusters under the action of femtosecond laser pulses in a SiN _x film containing excess silicon has been studied. The initial film was grown by plasmachemical deposition at 100°C on a PET substrate. The pulsed crystallization was effected by a Ti-sapphire laser operating at a wavelength of 800 nm and a pulse duration of about 50 fs. According to the Raman spectroscopy data, the pulsed laser annealing stimulated the accumulation of excess silicon in nanoclusters and their crystallization. The proposed approach can be used for the formation of semiconductor nanocrystals in dielectric films on various plastic (polymer) substrates.     

Optimization of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin film absorber layer growth without sulphurization using triethanolamine as complexing agent for thin film solar cells applications

Quaternary kesterite Cu₂ZnSnS₄ (CZTS) thin films have been prepared via a simple spin-coating technique based on a sol–gel precursor of 2-methoxyethanol solution with metal salts and thiourea. Solution processed CZTS thin film growth parameters using complexing agent triethanolamine (TEA) have been investigated. Effects of complexing agent TEA on structural, morphological, optical, electrical and photovoltaic properties of CZTS thin films were systematically investigated. X-ray diffraction and Raman spectroscopy studies reveal that amorphous nature of CZTS thin film changes into polycrystalline with kesterite crystal structure with optimized TEA concentartion. Surface morphology of CZTS films were analyzed by field emission scanning electron microscope and atomic force microscope, which revealed the smooth, uniform, homogeneous and densely packed grains and systematic grain growth formation with varying TEA concentrations. UV–Vis spectra revealed a direct energy band gap ranging from 1.78 to 1.50 eV, which was found to depend upon the TEA concentration. X-ray photoelectron spectroscopy demonstrated stoichiometric atomic ratios of multicationic quaternary CZTS thin film grown without sulphurization. p-type conductivity was confirmed using Hall measurements and the effect of varying concentartion of TEA on electrical and photovoltaic properties are studied. The SLG/FTO/ZnO/CZTS/Al thin film solar cell is fabricated with the CZTS absorber layer grown at optimized TAE concentration of 0.06 M. It shows a power conversion efficiency of 0.87% for a 0.16 cm² area with V_oc = 0.257 mV, J_sc = 8.95 mA/cm² and FF?=?38%.     

Effects of SiNx interlayer on characterisation of amorphous diamond-like carbon films

The magnetron sputtering amorphous diamond-like carbon film is successfully deposited by SiN_x interlayer approach. The scanning electron microscopy study reveals the creation of high uniform surface micrograph diamond-like carbon films with SiN_x interlayer. For comparison, diamond-like carbon films with different interlayers are also grown. The Raman spectra are analyzed in order to characterize the stressed induce peak shifts of the films. The interactions of C atom with Si(100) and SiN_x surface are studied by density functional theory simulation. The effects of interlayers on the films deposition and the considering deposition mechanism are discussed. It is suggested that the diamond-like carbon and SiN_x bilayer structure can help to render applications in protective coatings and high quality silicon on diamond related radiation tolerance devices.     

Characterization of TeO<Subscript>2</Subscript> based glass frits and morphology to their silver films

Novel Pb-free Ag paste with a TeO₂ based glass frit for front contact electrodes of crystalline silicon solar cells were prepared. The influence of TeO₂ content (44–80 mol%) on thermal properties, structure and chemical durability of TeO₂ based glass was investigated. The thermal expansion coefficient decreased firstly when the TeO₂ content reached 60 mol%, then increased with further increasing TeO₂ content. The glass transition temperatures are 400–450 °C and melting temperature was as low as 800 °C. The weight loss of Te-3 glass specimen value is 0.28?×?10^?3 mg/cm², improving the chemical durability of the TeO₂ based glass system. In addition, morphology of TeO₂ based Ag films sintering at various temperatures were also investigated. The grain size of the Ag film increased when the content of glass frit increased, and grain boundaries for sintering TeO₂ based Ag pastes was obvious. The host elements of Ag, Te, Bi, and O in AT-3 specimens were almost homogeneously distributed. The amounts of SiO₂ formed when the Ag films were firing at 750 °C, indicating the etching of SiN _x layer by TeO₂ based glass frit. The specific resistivity of silver conducting films with 3 and 5 wt% glass materials of silver component were 3.1 and 3.7 µΩ cm, respectively.     

Surface passivation of silicon by rf magnetron-sputtered silicon nitride films

Si-rich silicon nitride (SiN_x(:H)) films are deposited on single crystalline p-type silicon to investigate their properties as a passivation and antireflection coating for solar cells. The SiN_x(:H) films were reactively sputtered from an intrinsic Si-target in an Ar/N₂/H₂ rf (13.56 MHz) magnetron plasma at substrate temperatures from 150°C to 350°C. The optical band gap of Si-rich SiN_x(:H) becomes lower than 3 eV which was determined from spectral data of the complex refractive index. Infrared spectra show a strong Si–H band in Si-rich films. The effective surface recombination velocity (SRV) was calculated from the effective life time in SiN_x(:H) covered p-Si wafers by the microwave detected photoconductivity decay (MW PCD) technique. Very low values for the effective SRV of about 60 cm/s were determined. The low values of the effective SRV are due to field-effect passivation. The field-effect passivation of the SiN_x(:H)/Si contact is explained with the model of a hetero junction.     

Infrared light emission from porous silicon

Very intense broad sub-bandgap infrared (IR) light emission around 1,550 nm was observed on porous silicon by photoluminescence (PL) measurements. The integrated intensity of the IR signal is two orders of magnitude higher than that of the band–band emission in Cz silicon. PL measurements with the sample immersed in different media, e.g., in HF and H₂O₂, confirmed that the broad IR band originates from the Si/SiO _x interface. Electroluminescence spectroscopy was carried out on a porous silicon p–n junction sample contacted with indium-tin oxide. The IR band was detected at room temperature at both forward and reverse bias. The results indicate that radiative recombination through interface states is very efficient at room temperature.     

Luminescence properties and preparation of Lu<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript> powder doped with Ce and Pr ions

Lu₃Al₅O₁₂:Ce³⁺ phosphor powder, which exhibits green emission band, was synthesized by the high-temperature solid-state reaction method with a flux BaF₂. X-ray diffraction (XRD), photoluminescence (PL) spectra, and fluorescent lifetime spectra were used to characterize the structure and luminescent properties of the sample. The XRD patterns indicated that when prepared at 1550 °C for 3 h with 4 wt% flux, Lu₃Al₅O₁₂:Ce³⁺ phosphors powder is the garnet cubic crystal system structure. Photoluminescence (PL) spectra showed that the Lu₃Al₅O₁₂:Ce³⁺ phosphor powder can be effectively excited by near ultraviolet and blue light, emitting broad band peaking at 505 nm, which is attributed to ²F_5/2?→?²D_5/2 transition. The self-concentration quenching mechanism of Ce³⁺ is the dipole–dipole interaction. Small amount of Pr³⁺ increased red light emission at 610 nm. Photoluminescence (PL) spectra and fluorescent lifetime spectra indicated that there was an efficient energy transfer process between Ce³⁺ and Pr³⁺.     

Photoluminescence of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> films formed by the molecular layer deposition method

Ta₂O₅ films of different thicknesses (20–100 nm) synthesized by the molecular layer deposition method on p-type silicon substrates and thermally oxidized silicon substrates have been studied by the methods of high-frequency capacitance–voltage characteristics and photoluminescence. A hole-conduction channel is found to form in the Si–Ta₂O₅–field electrode system. A model of the electronic structure of Ta₂O₅ films is proposed based on an analysis of the measured PL spectra and performed electrical investigations.     

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H–SiC by metal organic chemical vapor deposition using an in situ porous SiN_x interlayer. The SiN_x was formed in situ in the growth chamber by simultaneous flow of diluted silane and ammonia, leading to the formation of a randomly distributed mask layer and induced lateral overgrowth similar to conventional epitaxial lateral overgrowth of GaN. The full width at half maximum (FWHM) of X-ray diffraction peaks decreases dramatically by the SiN_x interlayer, indicating an improved crystalline quality. Also, it was found that the biaxial tensile stress in the GaN film was significantly reduced by in situ SiN_x interlayer from Raman spectra. Low temperature photoluminescence spectra exhibited a narrower FWHM by the SiN_x interlayer.     

Cu doping effect on the resistive switching behaviors of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

Spin-coated Cu_xCo_1?xFe₂O₄ (x = 0, 0.2, 0.4, 0.6, and 0.8) thin films were prepared on Pt/TiO₂/SiO₂/Si substrates. Pt/Cu_xCo_1?xFe₂O₄/Pt structures were fabricated to investigate the effect of Cu doping concentration on the resistive switching behaviors. Structural and morphology characterizations revealed that Cu doping improved the crystallization of the thin films as compared to undoped CoFe₂O₄. Current–voltage characterization showed that all Cu_xCo_1?xFe₂O₄ thin films showed unipolar resistance switching, but the distribution range of the set voltage, reset voltage, and resistances were much reduced by Cu doping. Clear improvement in the stability of these parameters started to appear with x = 0.4, and the optimized performance was observed in the Pt/Cu_0.6Co_0.4Fe₂O₄/Pt structure. The improved stability of the switching parameters was attributed to the enhancement of hopping process between the Fe ions and the Cu ions in the spinel lattice. Our results indicated that appropriate adjustment of the doping elements in oxides can be a feasible approach in achieving stable resistance switching memory devices.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.     

Optical properties of Eu<Superscript>3+</Superscript> activated SrLa<Subscript>2</Subscript>O<Subscript>4</Subscript> red-emitting phosphors for WLED applications

The SrLa_2?xO₄:xEu³⁺ phosphors are synthesized through high-temperature solid-state reaction method at 1473 K with various doping concentration. Their phase structures, absorption spectra, and luminescence properties are investigated by X-ray diffraction (XRD), UV–Vis spectrophotometer and photoluminescence spectrometry. The intense absorption of SrLa_2?xO₄:xEu³⁺ phosphors have occurred around 400 nm. The prominent luminescence spectra of the prepared phosphors exhibited bright red emission at 626 nm. The doping concentration 0.12 mol% of Eu³⁺ is shown to be optimal for prominent red emission and chromaticity coordinates are x?=?0.692, y?=?0.3072. Considering the high colour purity and appropriate emission intensity of Eu³⁺ doped SrLa₂O₄ can be used as red phosphors for white light emitting diodes (WLEDs).     

Synthesis and temperature dependent photoluminescence of Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O films grown by ultrasonic spray pyrolysis

Zn_1−x Mg _x O films were deposited on single crystal Si (100) substrates using ultrasonic spray pyrolysis under ambient atmosphere. A strong ultraviolet near-band-edge (NBE) emission was observed in the room temperature photoluminescence (PL) measurement for all the as-grown Zn_1−x Mg _x O films, while the deep-level emission was almost undetectable, suggesting that the obtained Zn_1−x Mg _x O-based films are well close to stoichiometry and of optically high quality. A distinct blue-shift of NBE emission peak from 386 nm to 358 nm was observed as the Mg concentration increases from 0% to 25 %. The photoluminescence spectra as a function of temperature were also investigated to examine the emission mechanism of Zn_1−x Mg _x O films.     

Cu-doping effect on the structural, optical and photoluminescence properties of Sn0.98Cr0.02O2 nanoparticles by co-precipitation method

Sn_0.98-xCr_0.02Cu_xO₂ nanoparticles were prepared by co-precipitation method with different Cu concentrations from x = 0 to 0.05 and annealed at 600°C for 2 h in air atmosphere. The prepared particle were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectra, UV–visible spectrophotometer, and Fourier transform infrared spectroscopy. The XRD measurement reveals that the prepared nanoparticles have different microstructure without changing a tetragonal structure. The calculated average crystalline size decreased from 12.2 to 10.5 nm for x = 0–0.02 then gradually increased up to 16.8 nm for x = 0.05 which were confirmed by Scanning electron microscope. The optical studies were done by UV–visible spectrometer and the energy band gap values were calculated from absorption spectra. A small red shift from 3.52 eV (Cu = 0) to 3.49 eV (Cu = 0.02, ΔE_g = 0.03 eV) at lower Cu concentrations and a remarkable blue shift from 3.49 eV (Cu = 0.02) to 3.71 eV (Cu = 0.05, ΔE_g = 0.22 eV) at higher Cu concentrations is due to Cu-doping in Cr–SnO₂ matrix. The presence of functional groups and the chemical bonding is confirmed by Fourier transforms infrared spectra. PL spectra of Sn_0.98-xCr_0.02Cu_xO₂ nanoparticle described the shift in UV emission from 366 to 381 nm (red shift) and a shift in blue band emission from 458 to 482 nm (red shift) which confirms the Cu-doping in Cr–SnO₂ matrix. The doping of Cu in the present system is useful to tune the emission wavelength and hence is appreciable for the fabrication of nano-optoelectronic devices and photo-catalytic applications.     

Compositional effect on optical characteristics of solution grown (Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Sn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)S thin films

A good deal of information regarding the synthesis and optical properties of chemically grown (Cd_1?x Sn _x )S (x = 0.01–0.40) thin film has been reported. The growth of these films depends on various preparative parameters and deposition conditions. The reactant concentration, pH, deposition temperature, and rate of agitation were found to influence significantly the quality and thickness of the films. The photoconductive studies have been done with the help of rise and decay curves. Lifetime, mobility, and trap depth are calculated for observed parameters. Band gap measurements for the prepared films have been done with the help of optical transmission spectra using UV-VIS-IR spectrophotometer (190–1100 Å). Interesting results of PC rise and decay studies, optical absorption, and transmission spectra have been presented and discussed. Mobility is influenced significantly by Sn composition. The action spectra showed displacement in the absorption edge towards lower energy side by the addition of Sn mole content. The energy gap decreased from 2.1 to 1.9 eV for x = 0.01 and 1.85 eV for x = 0.02.     

Magnetization reversal and tunable exchange bias behavior in Mn-substituted NiCr<Subscript>2</Subscript>O<Subscript>4</Subscript>

Single phase samples of Ni(Cr_1?xMn _x )₂O₄ (x = 0–0.50) were synthesized by using sol–gel route. Investigation of structural, magnetic, exchange bias and magnetization reversal properties was carried out in the bulk samples of Ni(Cr_1?xMn _x )₂O₄. Rietveld refinement of the X-ray diffraction patterns recorded at room temperature reveals the tetragonal structure for x = 0 sample with I4₁/amd space group and cubic structure for x ≥ 0.05 samples with \( {\text{Fd}\bar{3}\text{m}} \) space group. Magnetization measurements show that all samples exhibit ferrimagnetic behavior, and the transition temperature (T_C) is found to increase from 73 K for x = 0 to 138 K for x = 0.50. Mn substitution induces magnetization reversal behavior especially for 30 at% of Mn in NiCr₂O₄ system with a magnetic compensation temperature of 45 K. This magnetization reversal is explained in terms of different site occupation of Mn ions and the different temperature dependence of the magnetic moments of different sublattices. Study of exchange bias behavior in x = 0.10 and 0.30 samples reveals that they exhibit negative and tunable positive and negative exchange bias behavior, respectively. The magnitudes of maximum exchange bias field of these samples are found to be 640 and 5306 Oe, respectively. Exchange bias in x = 0.10 sample originates from the anisotropic exchange interaction between the ferrimagnetic and the antiferromagnetic components of magnetic moment. The tunable exchange bias behavior in x = 0.30 sample is explained in terms of change in domination of one sublattice moment over the other as the temperature is varied.     

Mixed Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>:MoO<Subscript>3</Subscript> (95:5 and 85:15) thin films and their properties for electrochromic device applications

Nb₂O₅:MoO₃ (95:5 and 85:15) thin films were deposited onto glass and fluorine doped tin oxide coated glass substrates at 100 and 300 °C by RF magnetron sputtering technique. The physical and electrochromic properties of the films were studied. XRD result reveals that deposited films were amorphous. The XPS study confirms the compositional purity and the presence of Nb⁵⁺ and Mo⁶⁺ in the deposited film. Surface morphological study shows platelet like features of deposited film. The average transmittance of the film is varied between 91 and 85 %. Photoluminescence study exhibits three characteristic emission peaks and confirms the better optical quality of deposited film. Raman spectra show the LO–TO splitting of Nb–O stretching of the deposited film. Electrochromic behavior of the deposited films characterized by cyclic voltammetry using 0.5 M LiClO₄·PC and 0.5 M H₂SO₄ electrolyte solutions show all the films are having better reversibility and reproducibility in their electrochemical analysis.     

Density improvement of Si quantum dots embedded in Si-rich silicon nitride films by light-filtering rapid thermal processing

Si-rich silicon nitride (SRSN) (SiN_x, x ≈ 0.49) films were deposited on Si (100) and quartz substrates by magnetron co-sputtering. For comparison, two sets of identical samples were then treated in a nitrogen atmosphere by conventional rapid thermal processing (CRTP) and light-filtering rapid thermal processing (LRTP) at temperature in a range of 950–1,100 °C, respectively. Raman spectroscopy, grazing incident X-ray diffraction, transmission electron microscope, photoluminescence (PL) and Hall measurements were used to analyze the structure, luminescence, and conductivity of the films. Experimental results show that the samples treated with LRTP posses higher dot number density, crystalline volume fraction, PL intensity and conductivity than the CRTP samples. The quantum effects in rapid thermal processing have a negative influence on the formation and density of Si quantum dots (QDs) in SRSN films. The present work opens new strategy for the formation of high density Si QDs embedded in SRSN films.