Preparation and luminescence properties of Y<Subscript>3−y</Subscript>Al<Subscript>5−x</Subscript>Ga<Subscript>x</Subscript>O<Subscript>12</Subscript>:Ce<Superscript>3+</Superscript><Subscript>y</Subscript> phosphors

Y_3?yAl_5?xGa_xO₁₂:Ce³⁺_y phosphors were prepared by high temperature solid state reaction method. The crystal structures, the influence of Ga³⁺ concentration on the photoluminescence (PL), cathodoluminescence, thermal stability and morphology of the phosphors were studied in detail. The results indicated that diffraction angle of the samples decreased gradually with the increase of Ga³⁺ ions content in XRD pattern. The emission peak of the spectra show a progressive blue-shift, the intensity increased first and then decreased and the optimal Ga³⁺ concentration in Y_2.94Al_5?xGa_xO₁₂:Ce³⁺_0.06 phosphors is x?=?0.75. The critical concentration of Ce³⁺ in YAGG:Ce³⁺ phosphors is affected with the ratio of Ga³⁺ to Al³⁺ and the Y_2.9Al_4.25Ga_0.75O₁₂:Ce³⁺_0.1 phosphor showed the best performance on PL. However, the optimum concentration of Y_3?yAl_5?xGa_xO₁₂:Ce³⁺_y phosphors is x?=?1.5 and y?=?0.04 when they were excited by cathode ray.     

Luminescent properties of single-phase Ba<Subscript>2</Subscript>P<Subscript>2</Subscript>O<Subscript>7</Subscript>:Tb<Superscript>3+</Superscript>, R (R = Eu<Superscript>2+</Superscript>, Ce<Superscript>3+</Superscript>) phosphors for white LED

The Ba₂P₂O₇:Tb³⁺, R (R?=?Eu²⁺, Ce³⁺) phosphors were synthesized by use of a co-precipitation method. Crystal phase, excitation and emission spectra of sample phosphors are analyzed by means of XRD and FL, respectively. The emission spectra of Ba₂P₂O₇:Ce³⁺, Tb³⁺ phosphors exhibit four linear peaks attributed to the ⁵D₄?→?⁷F_J (J?=?6–3) transition of Tb³⁺ while four broad emission bands are observed in the emission spectra of Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors. The effects of Eu²⁺ concentration on the luminescent properties of Ba₂P₂O₇:Tb³⁺, R (R?=?Eu²⁺, Ce³⁺) are studied. Ce³⁺ affects the luminescent properties of Ba₂P₂O₇:Ce³⁺, Tb³⁺ phosphors just as the sensitizer. However, Eu²⁺ is considered both as the sensitizer and the activator in Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors. The chromaticity coordinates of Eu²⁺ and Tb³⁺ co-doped phosphors gather around the white light field with the CCT approximate to 5000 K, indicating that the luminescent property of Ba₂P₂O₇:Eu²⁺, Tb³⁺ phosphors may approach to a desired level needed for white LED application.     

Tunable luminescence and energy transfer properties in Ca<Subscript>2−x</Subscript>NaMg<Subscript>2</Subscript>V<Subscript>3</Subscript>O<Subscript>12</Subscript>:xEu<Superscript>3+</Superscript> phosphors

Novel broadband luminescence phosphors Ca_2?xNaMg₂V₃O₁₂:xEu³⁺ have been successfully prepared via the conventional high-temperature solid-state reaction. The effects of concentrations of doped Eu³⁺ and introducing Li⁺, K⁺ on the luminescent properties of phosphor were studied. X-ray diffraction, GSAS structural refinement and photoluminescence spectra were used to characterize the samples. The refinement data ensured where the doped Eu³⁺ ions occupied the lattice site in the host. Under 355 nm excitation, the emission peak of Ca₂NaMg₂V₃O₁₂:Eu³⁺ phosphors are located at 610 nm (red) ascribed to the electric dipole transition of Eu³⁺ from ⁵D₀ → ⁷F₂. In the range of 400–575 nm, Ca₂NaMg₂V₃O₁₂:Eu³⁺ phosphors have broad emission bands attributed to charge transfer of \({\text{VO}}_4^{3 - }\) group. Energy transfer mechanism, energy transfer efficiency and critical distance (R_c) of \({\text{VO}}_4^{3 - }\) → Eu³⁺ would be analyzed. The emitting color of Ca₂NaMg₂V₃O₁₂:Eu³⁺ could be tunable from blue-green to near white light.     

Ln<Subscript>3</Subscript>Al<Subscript>5</Subscript>O<Subscript>12</Subscript>:Mn<Superscript>4+</Superscript> (Ln = Y and Lu): non-rare-earth doped red phosphor for improving light properties of white light emitting diodes

We fabricated a series of Y₃Al₅O₁₂:Mn⁴⁺ and Y_1?yLu_yAl₅O₁₂:Mn⁴⁺ phosphors by a solid state reaction. The phase and the optical properties of the synthesized phosphors were investigated. Under the excitation at 465 nm, Y₃Al₅O₁₂:Mn⁴⁺ phosphors show emission bands locating at deep red regions, which is induced by the spin- and parity-forbidden ²E_g → ⁴A_1g transitions of Mn⁴⁺. The substitution of Y³⁺ by Lu³⁺ decreases the lattice parameter and thus strengthens the crystal field strength, which gives rise to the blue shift of emission band for Y_1?yLu_yAl₅O₁₂:Mn⁴⁺ phosphors. Due to the compensation of red light by Y₃Al₅O₁₂:Mn⁴⁺ or Y_1?yLu_yAl₅O₁₂:Mn⁴⁺ phosphor, the values of correlated-color-temperature for fabricated LEDs are decreased, which leads to the suitable application for them in indoor illumination.     

Tunable luminescence of Sr<Subscript>5(1−x)</Subscript>Ba<Subscript>5x</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>Cl:Eu<Superscript>2+</Superscript> (0 ≤ x ≤ 100%) phosphors from different Eu<Superscript>2+</Superscript> centers

In this paper, a series of Eu²⁺ activated Sr_5(1?x)Ba_5x(PO₄)₃Cl (0?≤?x?≤?100%) phosphors were prepared by solid-state reaction method, and their luminescence properties under near-ultraviolet excitation were investigated. For Eu²⁺-activated Sr₅(PO₄)₃Cl, a strong emission band located at 445 nm is observed upon 365 nm excitation, which could be attributed to the 4f ⁶5d ¹–4f ⁷ transition of different Eu²⁺ centers. When the Ba²⁺ is introduced into the Sr₅(PO₄)₃Cl:Eu²⁺, the emission band of Eu²⁺ is broadened largely. The fluorescence lifetimes for different Eu²⁺ centers were determined by the decay curves and time-resolved spectra. The excitation spectra of the as-prepared samples cover a wide wavelength range from 240 to 420 nm, which can well match the emission wavelength of the near ultraviolet LED chip. The investigation of the thermal luminescence stability reveals that the introduction of Ba²⁺ could improve the thermal quenching properties.     

Controllable white light emission from Dy<Superscript>3+</Superscript>–Eu<Superscript>3+</Superscript> co-doped KCaBO<Subscript>3</Subscript> phosphor

Potassium calcium borate, KCaBO₃:Eu³⁺ phosphors with various Dy³⁺ concentrations (0–3 wt%) were synthesized by solid state reaction and studied for the first time. Under various UV–violet excitations, the obtained single monoclinic phased Dy³⁺–Eu³⁺ co-doped KCaBO₃ polycrystalline phosphors emit a combination of yellow–blue and red–orange wavelength giving intense white light, which can easily be controlled by varying the concentration of Dy³⁺. The increase in white light emission with the increase of Dy³⁺ concentration indicates the efficient energy inter-ion transfer from Dy³⁺ to Eu³⁺ ions. Furthermore, the observed emission lifetimes and the intense white light emission are suggestive exploration for the present phosphor for potential optoelectronic applications such as white light-emitting phosphor for blue LEDs chips.     

Sol-gel synthesis and photoluminescence of CaTi<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Zr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>3</Subscript>: Pr<Superscript>3+</Superscript> phosphors

CaTi_1−x Zr _x O₃: Pr³⁺ phosphors have been synthesized by sol-gel and solid state methods, with x = 1/300, 2/300, 3/300, 4/300, 5/300, 6/300, 7/300, respectively. Powder X-ray diffraction (XRD), UV-visible absorption spectra, photoluminescent spectra (PL), and scanning electron microscopy (SEM) images are used to characterize the powder samples. The inverse absorption at 610 nm appearing in the UV-visible absorption spectra is due to the ¹ D ₂ → ³ H ₄ characteristic emission of Pr³⁺. Changes in the emission spectra at 610 nm were agreed with those in UV-visible absorption spectra. The strongest red excitation obtained from CaTi_1−x Zr _x O₃: Pr³⁺ (x = 4/300) and CaTi_1−x Zr _x O₃: Pr³⁺ (x = 5/300) possesses the strongest emission at 610 nm, similar to the intensities of Ca(Ti_1−x Zr _x )O₃: Pr³⁺ (x = 3/300, 4/300, 6/300), which may be corresponded to the cell parameters of CaTi_1−x ZrxO₃: Pr³⁺.     

Synthesis and luminescent properties of Sr<Subscript>4</Subscript>Al<Subscript>14</Subscript>O<Subscript>25</Subscript>:Eu<Superscript>2+</Superscript> blue–green emitting phosphor for white light-emitting diodes (LEDs)

An efficient blue–green emitting phosphor, Sr₄Al₁₄O₂₅:Eu²⁺, was prepared by solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Sr₄Al₁₄O₂₅:Eu²⁺. Field-emission scanning electron-microscopy (FE-SEM) observation indicated that the microstructure of the phosphor consisted of irregular fine grains with an average size of about 8–10 μm. Photoluminescence measurements showed a broad absorption band between 300 and 450 nm which was efficiently excited by near-ultraviolet (NUV) LEDs (350–410 nm) and a strong emission band peaking at 491 nm. A bright blue–green LED with chromatic coordination (0.176, 0.412) was fabricated by incorporating the phosphor with an InGaN-based NUV chip, which indicates that Sr₄Al₁₄O₂₅:Eu²⁺ is a good candidate phosphor for application in white LEDs.     

Spectral sensitivity of (Si<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(CdS)<Subscript>x</Subscript> solid solutions

Epitaxial layers of n-type solid solutions of the (Si₂)_{1 ? x} (CdS)_x system (0 ≤ x ≤ 0.01) were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal p-type single crystal silicon substrates. The photosensitivity spectra of p-Si/n-(Si₂)_{1 ? x} (CdS)_x structures have been measured. A photoresponse peak at E ≈ 2.35 eV (1.25 eV below the top of the valence band of silicon) has been observed, which is probably related to an impurity level due to CdS molecules.     

Optical and electrical properties of amorphous Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>C<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>:H films

We report the optical and electrical properties of a-Si:H and a-Si_{1 − x} C _x :H (x = 0.06, 0.17, 0.25,0.32) amorphous films produced by plasma deposition at constant hydrogen content. IR absorption data are used to evaluate the density of Si-H and C-H bonds and the hydrogen concentration in the films. The activation energy for conduction and the carrier mobility in the films are determined from the temperature dependence of their electrical conductivity.     

Estimating the effect of C<Stack><Subscript>2</Subscript><Superscript>−</Superscript></Stack> and C<Stack><Subscript>3</Subscript><Superscript>+</Superscript></Stack> radicals and neutral clusters on the fullerene formation

The mass spectrum of the products of arc discharge in helium between graphite electrodes has been studied for various values of the gas flow rate. As the gas flow rate increases, the intensity of C₆₀^±, C₇₀^±, C₈₄^± and C₉₀^± fullerene peaks increases and that of the C₂⁻ and C₃⁺ cluster radicals decreases, but the total decay in radicals amounts to only 21% of the total growth of fullerenes. From this it follows that a contribution to the formation of fullerenes from the neutral clusters (which are taken into account for the first time) significantly exceeds the contribution due to small radical species.     

Stability region of Eu<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>O<Subscript>3+δ</Subscript> solid solutions in air

The homogeneity range of EuMnO₃ has been determined using x-ray diffraction analysis of single-and mixed-phase Eu_2?x Mn_xO_3+δ samples (0.90≤x≤1.20, Δx = 0.02) prepared from oxide mixtures by solid-state reactions in air between 900 and 1400°C. The results have been used to construct a partial phase diagram of the Eu-Mn-O system in air. The dependences of unit-cell parameters on x and synthesis temperature are presented for the samples synthesized at 1100 and 1400°C and for EuMnO₃, respectively. The solubility of europium oxide in EuMnO₃ is tentatively attributed to structural defects, and that of managanese oxides is interpreted in terms of structural defects, oxygen nonstoichiometry of europium manganite, the disproportionation reaction 2Mn³⁺ = Mn²⁺ + Mn⁴⁺, and partial substitution of the resulting Mn²⁺ for Eu³⁺ on the cuboctahedral site of the perovskite-like structure. To check these assumptions, systematic studies of the oxygen nonstoichiometry and structure of Eu_2?x Mn_xO_3+δ solid solutions synthesized at different temperatures are needed.     

Cathodoluminescence properties of SiO<Subscript>2</Subscript>:Pr<Superscript>3+</Superscript>and ZnO·SiO<Subscript>2</Subscript>:Pr<Superscript>3+</Superscript> phosphor nanopowders

The successful incorporation of ZnO nanoparticles in Pr³⁺-doped SiO₂ using a sol–gel process is reported. SiO₂:Pr³⁺ gels, with or without ZnO nanoparticles, were dried at room temperature and annealed at 600 °C. On the basis of the X-ray Diffraction (XRD) results, the SiO₂ was amorphous regardless of the incorporation of Pr³⁺ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed in an N₂ atmosphere indicated that stable phases were formed at ≥900 °C. Absorption bands ascribed to ³H₄-³P_{(J = 0,1,2)}, ¹I₆ and ¹D₂ in the UV–VIS region were observed from SiO₂:Pr³⁺ colloids. The red cathodoluminescent (CL) emission corresponding to the ³P₀ → ³H₆ transition of Pr³⁺ was observed at 614 nm from dried and annealed SiO₂:Pr³⁺ powder samples. This emission was increased considerably when ZnO nanoparticles were incorporated. The CL intensity was measured at an accelerating voltage of 1-5 keV and a fixed beam current of 8.5 μA. The effects of accelerating voltage on the CL intensity and the CL degradation of SiO₂:Pr³⁺ and ZnO·SiO₂:Pr³⁺ were also investigated using Auger electron spectroscopy coupled with an Ocean Optics S2000 spectrometer.     

Novel temperature stable Ba<Subscript>1−x</Subscript>Sr<Subscript>x</Subscript>V<Subscript>2</Subscript>O<Subscript>6</Subscript> microwave dielectric ceramics with ultra-low sintering temperature

New temperature stability Ba_1?xSr_xV₂O₆ (0.35?≤?x?≤?0.55) microwave dielectric ceramics prepared by the conventional solid-state route were investigated. X-ray diffraction confirmed that all the specimens formed a solid solution single phase with orthorhombic structure. The microwave dielectric properties strongly depended on the compositions, densification and microstructure of the specimens. Furthermore, partial Sr ions substitution for Ba ions in Ba_1?xSr_xV₂O₆ lattices not only successfully improved the temperature stability of BaV₂O₆-based ceramic but also promoted the sinterability of SrV₂O₆-based one. Out of these compositions, Ba_0.5Sr_0.5V₂O₆ sintered at 625?°C exhibited a near-zero τ_f together with a low permittivity ε_r?~?11.5 and a quality factor Q?×?f?~?14 100 GHz, which also showed good chemical compatibility with Al electrodes.     

Phase equilibria in the system “CaAl<Subscript>2</Subscript>Si<Subscript>3</Subscript>O<Subscript>10</Subscript>”-Na<Subscript>2</Subscript>Al<Subscript>2</Subscript>Si<Subscript>3</Subscript>O<Subscript>10</Subscript>-H<Subscript>2</Subscript>O

The phase equilibria in the “CaAl₂Si₃O₁₀”-Na₂Al₂Si₃O₁₀-H₂O system are analyzed using structural and thermal analysis data, and the ideal gonnardite structure is modeled. The results suggest that, to ensure a better correlation with the structures of the zeolites in this series, a new structural model of the gonnardite-based solid solution must be selected, with the structure rotated through 45° about the c axis in the ab plane.     

The synthesis and photoelectric properties of Si-(Si<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(ZnS)<Subscript>x</Subscript> epitaxial structures

Epitaxial layers of (Si₂)_1?x(ZnS)_x (0.08≤x≤0.92) solid solutions were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal polycrystalline silicon substrates. The morphology, photoelectric properties, and current-voltage characteristics of the epilayers have been studied. The obtained (Si₂)_1?x(ZnS)_x layers exhibit homogeneous depth-concentration profiles of components. The photo-sensitivity interval extends from 1.05 to 3.0 eV, which makes the obtained structures a promising material for photo-and optoelectronic devices.     

Microstrucutre and thermoelectric properties of rapidly prepared Sn<Subscript>1−x</Subscript>Mn<Subscript>x</Subscript>Te alloys

Sn_1?xMn_xTe (x?=?0, 0.09, 0.15, 0.20) bulk materials were prepared by melt spinning combined with spark plasma sintering process. Nanoscale grains were obtained, and the solid solubility of Mn was much enhanced by the ultrafast-cooling synthesis technique. The maximum of Seebeck coefficient and power factor are 242 µVK^?1 and 19.97 µW cm^?1K^?2 at 873 K with the doping concentration of 15 at% Mn. A large amount of grain boundaries and doped atoms improve the scattering of heat-carrying phonons in a wide range of frequencies, and the scattering mechanisms are also explained by theoretical calculation. As a result, the minimum of lattice thermal conductivity is 0.66 µVK^?1 at 873 K, the corresponding figure of merit is 1.26 for Sn_0.85Mn_0.15Te sample. This value is improved by 35% comparing with previously reported result. Our work indicates that melt spinning process is effective to develop SnTe related thermoelectric materials with excellent thermoelectric properties, which has the widespread commercial value and the prospects for development.     

Lewis and Brønsted acids in super-acid catalyst SO<Subscript>4</Subscript><Superscript>2−</Superscript>/ZrO<Subscript>2</Subscript>–SiO<Subscript>2</Subscript>

Super-acid catalyst, SO₄ ^2?/ZrO₂–SiO₂, with high zirconium loading was synthesized and the nature of the surface acid was investigated by FT-IR of pyridine adsorption. With the increasing ZrO₂ content, the Lewis and Brønsted acid sites increased and reached the maximum when Zr/Si (molar ratio) = 1.3. The sample with Zr/Si = 1.3 showed the strongest IR adsorption band in the S=O stretching region (1,300–1,400 cm^?1). Pyrosulfate and monosulfate species existed on the surface of the catalysts and the acidic strength could be enhanced by induction effect of their S=O groups. And there were two kinds of Brønsted acid sites on the surface of the catalysts.     

Novel IV-Group Based Diluted Magnetic Semiconductor: Cr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>1−</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>

Cr _x Ge_{1? x} (x ～ 0.08) films were grown on GaAs (001) and Ge (001) substrates using molecular beam epitaxy (MBE) method, and their magnetic and transport properties have been studied in the temperature range between 1.8 and 300 K. All of the films exhibited weak paramagnetic behavior. Transport measurements showed that magnetoresistance ratio and the anomalous Hall resistance depend on the Cr concentration x and the kinds of substrate.