Effect of sputtering power on microstructure of dielectric ceramic thin films by RF magnetron sputtering method using (Ba<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> as target

Radio frequency (RF) magnetron sputtering method was applied to prepare dielectric ceramic thin films on SiO₂ (110) substrates using (Ba_0.3Sr_0.7)(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramics as target. The samples were deposited at different sputtering powers in Ar atmosphere. In particular, the microstructure and morphology of the thin films were investigated as a function of sputtering powers by X-ray diffraction (XRD), X-ray photoelectron spectroscope (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results show that the thin films are polycrystalline and the sputtering power significantly influences the surface morphology and microstructure of the thin films. On increasing the sputtering power, the crystallinity improves and the grain size and roughness of the thin films reach maximum values at 200 W.     

Structural and optical characterization of c-axis textured BaTiO<Subscript>3</Subscript> thin films on MgO fabricated by RF magnetron sputtering

In this paper, BaTiO₃ thin films were prepared by RF magnetron sputtering on MgO substrates and their properties such as the crystal structure and optical waveguide properties were investigated. The optimum deposition parameters, such as substrate temperature, deposition pressure, gas flow ratio, the RF power and the after annealing temperature, were obtained in order to get the best BaTiO₃ film quality. The XRD results show that highly c-axis textured BaTiO₃ thin films were successfully grown on MgO substrate. Films obtained under the optimum deposition parameters, substrate temperature of 650°C, RF power of 50 W, deposition pressure 18 mTorr and gas flow ratio O₂/(Ar+ O₂) of 15% namely, reaches a full width at half maximum intensity (FWHM) of BaTiO₃ (002) XRD peak of 0.25°. The FWHM of BaTiO₃ (002) XRD peak was further reduced to 0.24° via post-treatment with furnace annealing (at 800°C for 2 h) which indicates the film crystal quality is further improved. The bright and sharp TE modes measured by m-line spectroscopy of the BaTiO₃ film were observed indicating its possible application in optical waveguide.     

A robust and self-assembled route to synthesis of CdZn(Se<Subscript>1−x</Subscript>Te<Subscript>x</Subscript>)<Subscript>2</Subscript> photoanodes as light harvesters for photoelectrochemical solar cells

This work reports on the development of CdZn(Se_1?xTe_x)₂ thin films utilized as the photoanode for photoelectrochemical cells (PECs). It was found that the incorporation of tellurium plays an important role in determining the optostructural, morphological, compositional and PEC performance of thin films. XRD measurements showed that the deposited thin films are in the mixed phases with a nanocrystalline nature. SEM images indicated that the surface morphology is favourable for effective light absorption in the solar spectrum. The EDS spectrum confirmed that thin film deposition occured in a stoichiometric manner. A detailed quantitative study was also executed using XPS and revealed the presence of Cd²⁺, Zn²⁺, Se^2? and Te^2? elements in the deposited thin film. Finally, the deposited thin films were tested for their photoelectrochemical (PEC) performance. The PEC study illustrated that CdZn(Se_1?xTe_x)₂ thin film showed the highest power conversion efficiency (η) of 1.13% among reported values.     

Mixed Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>:MoO<Subscript>3</Subscript> (95:5 and 85:15) thin films and their properties for electrochromic device applications

Nb₂O₅:MoO₃ (95:5 and 85:15) thin films were deposited onto glass and fluorine doped tin oxide coated glass substrates at 100 and 300 °C by RF magnetron sputtering technique. The physical and electrochromic properties of the films were studied. XRD result reveals that deposited films were amorphous. The XPS study confirms the compositional purity and the presence of Nb⁵⁺ and Mo⁶⁺ in the deposited film. Surface morphological study shows platelet like features of deposited film. The average transmittance of the film is varied between 91 and 85 %. Photoluminescence study exhibits three characteristic emission peaks and confirms the better optical quality of deposited film. Raman spectra show the LO–TO splitting of Nb–O stretching of the deposited film. Electrochromic behavior of the deposited films characterized by cyclic voltammetry using 0.5 M LiClO₄·PC and 0.5 M H₂SO₄ electrolyte solutions show all the films are having better reversibility and reproducibility in their electrochemical analysis.     

Studies on the target conditioning for deposition of LiCoO2 films

Deposition of good quality thin films of Lithium Cobalt Oxide (LiCoO₂), by sputtering is preceded by target conditioning, which dictates the surface composition, morphology and electrochemical performance of the deposited film. Sputtering from a virgin target surface, results in films with excess of the more reactive elements. The concentration of these reactive elements in the films decreases until the system reaches a steady state after sufficient sputtering from the target. This paper discusses the deposition kinetics in terms of target conditioning of LiCoO_2. The composition, morphology and texturing of deposited film during various hours of sputtering were analyzed using X-ray photoelectron spectroscopy (XPS) and Field Emission Scanning electron microscopy (FESEM). The compositional stability is not observed in the films formed during the initial hours of sputtering from the fresh target, which becomes stable after several hours of sputtering. The Li and Co concentration in the films deposited subsequently is found to be varying and possible causes are discussed. After the compositional stability is reached, electrochemical analysis of LiCoO₂ thin films was performed, which shows a discharge capacity of 129 μAh/cm².     

Fabrication of SiO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> double layer thin films with self-cleaning and photocatalytic properties

Transparent antireflective SiO₂/TiO₂ double layer thin films were prepared using a sol–gel method and deposited on glass substrate by spin coating technique. Thin films were characterized using XRD, FE-SEM, AFM, UV–Vis spectroscopy and water contact angle measurements. XRD analysis reveals that the existence of pure anatase phase TiO₂ crystallites in the thin films. FE-SEM analysis confirms the homogeneous dispersion of TiO₂ on SiO₂ layer. Water contact angle on the thin films was measured by a contact angle analyzer under UV light irradiation. The photocatalytic performance of the TiO₂ and SiO₂/TiO₂ thin films was studied by the degradation of methylene blue under UV irradiation. The effect of an intermediate SiO₂ layer on the photocatalytic performance of TiO₂ thin films was examined. SiO₂/TiO₂ double layer thin films showed enhanced photocatalytic activity towards methylene blue dye.     

Structural,morphological and optical properties of SnS<Subscript>2</Subscript> thin films by nebulized spray pyrolysis technique

The thin films of Nano crystalline tin disulfide (SnS₂) have been prepared by nebulized spray pyrolysis technique (NSP) with different molar concentrations (0.3, 0.4 and 0.5 M). Cleaned glass substrates were used and the substrate temperature was maintained at 300?°C. The films were deposited using tin tetrachloride monohydrate (SnCl₄·H₂O) and thiourea in de-ionized water and Isopropyl alcohol (1:3 ratio). The prepared films structural, morphological and optical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV–Vis spectrophotometer. The structure of the films were found to be face centered cubic with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters such as crystallite size, micro strain, dislocation density and texture coefficient. The average crystallite size values are 60 nm. Morphological results of the SnS₂ thin films are small needle shaped particles and the average grain size was 400 nm. The optical studies revealed that the band gap between 2.65 and 2.72 eV and high optical transmittance 98%. EDAX spectrum of tin disulfide result showed some amount of excess tin was present in the sample. This is the method with very low cost of producing tin disulfide (SnS₂) thin films, which is very important for many applications in industry.     

Photocatalytic properties of Au/TiO2 thin films prepared by RF magnetron co-sputtering

Au/TiO₂ thin films with various Au doping contents were deposited on quartz substrates by radio frequency (RF) magnetron co-sputtering. The as-deposited Au/TiO₂ films were characterized by energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), XRD, and UV-vis techniques. Au doping and UV treatment enhanced the photocatalytic efficiency of TiO₂ thin films. The optimal RF power of the Au target and UV treatment time were 5 W and 1 h, respectively. The enhanced photoactivity of Au(5 W)/TiO₂ thin films with UV treatment is found to result from the increased hydroxyl concentration.     

Electrical behavior of Y-doped Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> thin films

Ba_0.6Sr_0.4TiO₃ (BST) and 1.5 at% Y-doped Ba_0.6Sr_0.4TiO₃ (Y-BST) thin films have been deposited on single-crystal (100) oriented LaAlO₃ substrates using pulsed-laser deposition technique (PLD), respectively. X-ray diffraction (XRD) scanning revealed that the two kinds of films could be epitaxially grown in pure single-oriented perovskite phases, but Y-BST thin films showed an enhanced crystallization effect. The dielectric properties of the pure and Y-BST thin films were measured at 10 kHz and 300 K with a parallel-plate capacitor configuration. The results revealed that the addition of Y as an acceptor doping is very effective to increase dielectric tunability, and to reduce leakage current of BST thin films. The figure-of-merit (FOM) factor value increases from 17.32 for BST to 25.84 for Y-BST under an applied electric field of 300 kV/cm. The leakage current density of the BST thin films at a negative bias field of 300 kV/cm decreases from 2.45 × 10⁻⁴ A/cm² to 1.55 × 10⁻⁶ A/cm² by Y doping. The obtained results indicated that the Y-doped BST thin film is a promising candidate material for tunable microwave devices.     

The influence of thermal processing on microstructure of sol–gel-derived SrSnO<Subscript>3</Subscript> thin films

Polycrystalline SrSnO₃ thin films were fabricated using the aqueous sol–gel process and deposited on the single crystal sapphire (R-Al₂O₃ and C-Al₂O₃) and Si substrates by spin coating technique. Two different processing of thermal treatment was explored to produce SrSnO₃ thin films of different porosity. The XRD analysis showed that polycrystalline films with preferential growth of SrSnO₃ (200) plane were obtained on C-Al₂O₃ substrates, while films deposited on R-Al₂O₃ demonstrated a random polycrystalline growth. FE-SEM analysis revealed that the higher porosity of SrSnO₃ films can be achieved by introducing additional thermal treatment step during the deposition procedure. The UV–Vis reflectance spectroscopy was used to study the effect of porosity on optical properties of the films.     

Single step electrochemical synthesis of Sb<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films: effect of molarities of precursor solution

In the present investigation, we have successfully synthesized polycrystalline Sb₂Se₃ thin films by single-step electrochemical method. Effect of concentration of precursor solution on structural, morphological, optical, and wettability properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption, and contact angle measurement have been investigated. It is evident from XRD pattern that Sb₂Se₃ thin films are polycrystalline having orthorhombic crystal structure. Also, as precursor concentration increases the diffraction peak intensity also increases. Scanning electron micrographs reveal that the increase in precursor concentration causes the formation of soap foam like microstructure which is spread in the form of ellipsoids over whole substrate surface. The optical band gap decreases from 1.49 to 1.35 eV and contact angle decreases from 40° to 13°, i.e., the surface of Sb₂Se₃ thin films converts from hydrophilic to superhydrophilic nature due to increase in precursor concentration. In addition, the holographic interferometric properties have been studied. The thickness, stress to substrate and deposited mass of the thin films is determined using double exposure holographic interferometry (DEHI) technique.     

Fabrication of thin films by sputtering deposition using (Ba<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramic as target

Dielectric ceramic thin films were fabricated on SiO₂ (110) substrates by the radio frequency (RF) magnetron sputtering method using (Ba_0.3Sr_0.7)(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramic as target. The microstructure, components, and morphology of the thin films were investigated thoroughly. The results reveal that the experimental conditions can affect the growth of the thin films significantly. The main phases of the thin films are Ba_0.5Sr_0.5Nb₂O₆ and Ba_0.27Sr_0.75Nb₂O_5.78, which are of different composition from that of the ceramic target due to Zn loss. The thin films are polycrystalline with high-quality crystalline and are made up of dense rod-like structures. The growth mechanism of the thin films is discussed in particular.     

Photoinduced properties of nanocrystalline TiO<Subscript>2</Subscript> sol-gel derived thin films

In this paper, nanostructure TiO₂ thin films were deposited on glass substrates by sol-gel dip coating technique. X-ray diffraction and Fourier transform infrared spectroscopy were used to determine film behaviour. The super-hydrophilicity was assessed by contact angle measurement. Photocatalytic properties of these films were evaluated by degradation of methylene blue under UV irradiation. The XRD pattern of TiO₂ powder samples confirmed the presence of polycrystalline anatase phase with a crystal size of 17 nm. The results indicated that UV light irradiation had significant effect on super-hydrophilic and photocatalytic properties of TiO₂ thin films.     

TiO<Subscript>2</Subscript>/reduced graphene oxide composite based nano-petals for supercapacitor application: effect of substrate

In the present study, graphene oxide is synthesized using modified Hummers method. The X-ray diffraction spectroscopy (XRD), Fourier transform Raman spectroscopy (FT-Raman), energy-dispersive spectroscopy (EDS) and scanning electron microscopic (SEM) study is used to understand the successful synthesis of graphene oxide using the modified Hummers method. Secondly, the TiO₂/RGO composite has developed using co-precipitation method and structural, morphological, electrochemical and supercapacitive properties are studied. The TiO₂/RGO nano-composite shows the porous nanopetals like nature. The thin films of TiO₂/RGO composite are developed using the doctor blade method on steel, and the copper substrate and the electrochemical and supercapacitive properties are studied. The TiO₂/RGO composite thin films deposited on steel substrate are showing relatively less charge transfer resistance, and better specific capacitance than thin film deposited copper substrate. The TiO₂/RGO thin films deposited on steel substrate shows maximum specific capacitance 192 Fg^?1 at a scan rate of 5 mVs^?1.     

Synthesis and characterization of sol-gel derived TiO<Subscript>2</Subscript> thin films: Effect of different pretreatment process

Titanium dioxide (TiO₂) thin films have been successfully synthesized deposited on glass substrates by the sol-gel dip-coating method through different pretreating processes, including heated at 100, 500°C, via freeze drying, microwave heating for 10 min and subsequently annealed at 500°C for 2 h. The as-synthesized TiO₂ films were characterized using X-ray diffraction (XRD), atomic force microscopy (AFM) and ultravioletvisible (UV-vis) absorption spectra analysis technology. The preparation of the precursor sols and TiO₂ films were described in detail. Effects of 100, 500°C, freeze drying and microwave heating pretreatment on crystalline structure, surface morphology, roughness, particle size, optical property and electronic transition of TiO₂ thin films have been primarily investigated. The XRD results demonstrate that the TiO₂ films were well-crystallized and consisted of anatase TiO₂ phase only with (101) plane. The average crystalline size is only about 15 nm at 100°C pretreatment and the absorption edge shifts to shorter wavelength comparing with that at 500°C, freeze drying and microwave heating pretreatment. Pretreatment process is important during the preparation of thin films and has obviously effect on the structure and optical property of TiO₂ films due to the different heating mechanisms.     

Characterization and photocatalytic activity of boron-doped TiO<Subscript>2</Subscript> thin films prepared by liquid phase deposition technique

Boron doped TiO₂ thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an F ⁻ scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO₂ matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO₂ thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO₂ thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.     

The Development of Microstructure and Ferroelectric Properties of Bi<Subscript>4</Subscript>Ti<Subscript>3.96</Subscript>Nb<Subscript>0.04</Subscript>O<Subscript>12</Subscript> Thin Films

Bi₄Ti_3.96Nb_0.04O₁₂ thin films were successfully deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a sol–gel method and rapid thermal annealing. The effects of Nb-substitution and annealing temperature (500–800°C) on the microstructure and ferroelectric properties of bismuth titanate thin films were investigated. X-ray diffraction analysis reveals that the intensities of (117) peaks are relatively broad and weak at annealing temperatures smaller than 700°C. With the increase of annealing temperature from 500°C to 800°C, the grain size of Bi₄Ti_3.96Nb_0.04O₁₂ thin films increases. The Bi₄Ti_3.96Nb_0.04O₁₂ thin films annealed at 700°C exhibit the highest remanent polarization (2P _r), 36 μC/cm² and lowest coercive field (2E _c), 110 kV/cm. The improved ferroelectric properties can be attributed to the substitution of Nb⁵⁺ to Ti⁴⁺ in Bi₄Ti₃O₁₂ assisting the elimination of defects such as oxygen vacancy and vacancy complexes.     

Calcium phosphates formation on CaTiO<Subscript>3</Subscript> coated titanium

In this study, performance of calcium phosphate formation of CaTiO₃ coating film on Ti in Hanks’ balanced saline solution (HBSS) was investigated. CaTiO₃ thin films with a thickness of 50 nm were deposited on Ti using radiofrequency (RF) magnetron sputtering. The temperature of Ti substrate was adjusted to room temperature (RT) and 873 K. Thereafter, the specimens deposited at RT were annealed at 873 K in air for 7.2 ks. The films were characterized by grazing incident angle X-ray diffractometry (GI-XRD) and X-ray photoelectron spectroscopy (XPS). After immersion in HBSS for 60 d, on CaTiO₃ coated Ti, the formation of hydroxyapatite (HAP) was observed. Furthermore, HAP layer formed was thicker on the specimen on which CaTiO₃ film was deposited at RT and annealed than that prepared at 873 K. The major difference between both specimens was the chemical properties of the outermost surface. In summary, CaTiO₃ thin film deposited at RT and followed by annealing at 873 K for 7.2 ks in air enhances calcium phosphate formation ability on Ti.     

Influence of annealing times on morphological characteristics of ceramic thin films by RF-magnetron sputtering using Zn-enriched (Ba<Subscript>0.3</Subscript>Sr<Subscript>0.7</Subscript>)(Zn<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramic target

The BaO–SrO–ZnO–Nb₂O₅ ceramic thin films have been deposited by radio frequency (RF) magnetron sputtering, using a Zn-enriched (Ba_0.3Sr_0.7) (Zn_1/3Nb_2/3)O₃ target, followed by annealing in O₂ atmosphere at 1,200 °C for 15, 30, 45, and 60 min. The results show that the surface morphologies of samples are crack-free and compact with well-crystallized structures. Grain sizes of thin films annealed at different times increase with the increasing annealing times, and when the annealing time is of 45 and 60 min, the grains change from spherical shape to columnar shape. RMS values of the thin films decrease with the increase in the annealing times from 15 to 30 min, while the RMS values increase with the increase in the annealing times from 30 to 60 min.     

Nano-tribological characteristics of TiO<Subscript>2</Subscript> films on 3-mercaptopropyl trimethoxysilane sulfonated self-assembled monolayer

Silane coupling reagent (3-mercaptopropyl trimethoxysilane (MPTS)) was used to prepare twodimensional self-assembled monolayer (SAM) on silicon substrate. The terminal -SH group was in situ oxidized to −SO₃H group to endow the film with good chemisorption ability. Then TiO₂ thin films were deposited on the oxidized MPTS-SAM to form composite thin films, making use of the chemisorption ability of the −SO₃H group. Atomic force microscope (AFM) and contact angle measurements were used to characterize TiO₂ films. Adhesive force and friction force of TiO₂ thin films and silicon substrate were measured under various applied normal loads and scanning speed of AFM tip. Results showed that the friction force increased with applied normal loads and scanning speed of AFM tip. In order to study the effect of capillary force, tests were performed in various relative humidities. Results showed that the adhesive force of silicon substrate increases with relative humidities and the adhesive force of TiO₂ thin films only increases slightly with relative humidity. Research showed that surfaces with more hydrophobic property revealed the lower adhesive and friction forces.