Rietveld analysis of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films obtained by RF-sputtering

Calcium copper titanate, CaCu₃Ti₄O₁₂, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO₂/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The crystalline structure and the surface morphology of the films were markedly affected by the growth conditions. Rietveld analysis reveal a CCTO film with 100 % pure perovskite belonging to a space group Im3 and pseudo-cubic structure. The XPS spectroscopy reveal that the in a reducing N₂ atmosphere a lower Cu/Ca and Ti/Ca ratio were detected, while the O₂ treatment led to an excess of Cu, due to Cu segregation of the surface forming copper oxide crystals. The film present frequency -independent dielectric properties in the temperature range evaluated, which is similar to those properties obtained in single-crystal or epitaxial thin films. The room temperature dielectric constant of the 600-nm-thick CCTO films annealed at 600 °C at 1 kHz was found to be 70. The leakage current of the MFS capacitor structure was governed by the Schottky barrier conduction mechanism and the leakage current density was lower than 10^?7 A/cm² at a 1.0 V. The current–voltage measurements on MFS capacitors established good switching characteristics.     

Optimized sintering properties and temperature stability of MgZrTa<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics with CuO addition for microwave application

Microwave dielectric ceramics CuO–modified MgZrTa₂O₈ were synthesized by the conventional solid-state reaction method. The effects of CuO additives on the sintering characteristics and microwave dielectric properties have been investigated. With CuO addition, the sintering temperature of MgZrTa₂O₈ ceramics can be effectively lowered from 1475 to 1375 °C without decreasing its dielectric properties obviously and the temperature coefficient of the resonant frequency of MgZrTa₂O₈ ceramics have been optimized to near-zero. The crystalline phase exhibited a wolframite crystal structure and no second phase was detected at low addition levels. The grain growth of CuO–modified MgZrTa₂O₈ ceramics was accelerated due to liquid phase effect. The relative dielectric constants (ε_r) were correlated with apparent density and were not significantly different for all levels of CuO concentration. The quality factors (Q?×??) and temperature coefficient of resonant frequency (τ_?), which were strongly dependent on the CuO concentration, were analyzed by the grain size and the dielectric constant respectively. A best Q?×?? value of 116400 GHz and τ_? value of ?6.19 ppm/℃ were obtained for specimen with 0.05 wt% CuO addition at 1375 °C.     

Effects of LiF addition on the sintering behavior and microwave dielectric properties of Li<Subscript>2</Subscript>Mg<Subscript>3</Subscript>SnO<Subscript>6</Subscript> ceramics

Li₂Mg₃SnO₆ (abbreviation for LMS) ceramics doped with 1–4 wt% lithium fluoride (LiF) were prepared by the conventional solid-state reaction method. The effects of LiF addition on the phase compositions, sintering behaviors and microwave dielectric properties of LMS ceramics were investigated. A small amount of LiF addition could effectively decrease the sintering temperatures due to the liquid phase in the sintering process and induced no apparent degradation of the microwave dielectric properties. The optimized quality factor values for each composition firstly increased and then decreased with the increase of the LiF content. Whereas, the optimized dielectric permittivity increased with increasing of the LiF content. Distinguished microwave dielectric properties with a dielectric constant (ε _r) of 11.13, a quality factor (Q·f) of 104,750 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?10.83 ppm/°C were obtained for LMS ceramics sintered at 950?°C doped with 3 wt% LiF, which showed that the materials were suitable for the low temperature co-fired ceramics applications (LTCC).     

Microstructure and electrical properties of thin HfO<Subscript>2</Subscript> deposited by plasma-enhanced atomic layer deposition

The influence of annealing in the temperature range of 150–300 °C during plasma-enhanced atomic layer deposition of HfO₂ and the conditions of the following thermal processing on microstructure and electrical properties have been studied. The microstructure was examined by transmission electron microscopy and electron diffraction. The as-deposited HfO₂ film consists of monoclinic crystallites embedded in an amorphous matrix. It was found that the crystallite density grows with the increase in the deposition temperature; however, the size of the crystallites does not change. Subsequent annealing at 425 °C for 30 min or at 950 °C for 4 s led to complete crystallization through the lateral growth of the crystallites of samples formed at 250 and 300 °C. However, for the sample formed at 150 °C, subsequent annealing at 425 °C resulted in the formation of dendritic-like crystalline clusters embedded in an amorphous matrix. The leakage currents in polycrystalline and even amorphous HfO₂ films after the annealing were drastically increased. That could be explained by crystallization after the annealing. However, the C impurity redistribution and the growth of an interfacial layer could also affect the leakage.     

Synthesis,characterization and gas sensing performance of SnO<Subscript>2</Subscript> thin films prepared by spray pyrolysis

In this work, SnO₂ thin films were deposited onto alumina substrates at 350°C by spray pyrolysis technique. The films were studied after annealing in air at temperatures 550°C, 750°C and 950°C for 30 min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption spectroscopy technique. The grain size was observed to increase with the increase in annealing temperature. Absorbance spectra were taken to examine the optical properties and bandgap energy was observed to decrease with the increase in annealing temperature. These films were tested in various gases at different operating temperatures ranging from 50–450°C. The film showed maximum sensitivity to H ₂S gas. The H₂S sensing properties of the SnO₂ films were investigated with different annealing temperatures and H ₂S gas concentrations. It was found that the annealing temperature significantly affects the sensitivity of the SnO₂ to the H ₂S. The sensitivity was found to be maximum for the film annealed at temperature 950°C at an operating temperature of 100°C. The quick response and fast recovery are the main features of this film. The effect of annealing temperature on the optical, structural, morphological and gas sensing properties of the films were studied and discussed.     

Effect of BaTiO<Subscript>3</Subscript> heat treatment on the microstructure and dielectric properties of BaTiO<Subscript>3</Subscript>-based ceramics

We have studied the effect of heat treatment of the starting BaTiO₃ powder on the dielectric properties and microstructure of X7R-type BaTiO₃-based ceramics. The results demonstrate that annealing of BaTiO₃ stabilizes the degree of tetragonality in the crystal lattice of the ceramics. Microstructural analysis shows that the annealing temperature has no effect on the average grain size of the ceramics. Increasing the BaTiO₃ annealing temperature increases the dielectric permittivity of the core phase and reduces the temperature coefficient of capacitance (TCC). We obtained an X7R-type BaTiO₃-based ceramic material (BaTiO₃ annealing temperature, 1150°C; firing temperature, 1160°C) with the following properties: ɛ_25°C = 2230, TCC = ±12% (−55 to 125°C), and tanδ_25°C = 0.013.     

Effects of the annealing temperature on the structure and up-conversion photoluminescence of ZnO film

The up-conversion film is being tried to increase the photoelectric conversion efficiency of the silicon solar cell. To improve the efficiency of the photoluminescence film, the effects of the annealing temperature were investigated on the structure and photoluminescence of the ZnO up-conversion film, which was prepared using the sol-gel method and the spin-coating technique. The results show that the organic compounds and water in the ZnO film were completely eliminated when the annealing temperature reached 500?°C. The crystallinity of film is improved and the average grain size continuously increases as increasing the annealing temperature. The transmittance in the wavelength range of 400–2000?nm continuously increases as the annealing temperature increases from 500?°C to 700?°C, whilst it decreases first and then increases as the annealing temperature increases from 800?°C to 1000?°C. When the film is excited with a laser of 980?nm, there are two intense emission bands in the up-conversion emission spectra, 542-nm green light and 660-nm red light, corresponding to Ho³⁺: ⁵S₂/⁵F₄?→?⁵I₈?and ⁵F₅?→?⁵I₈ transitions, respectively. In addition, the intensity of up-conversion luminescence for the film increases first and then decreases with the increase of the annealing temperature. When the annealing temperature is at 900?°C, the film consists of small round compact particles with a high degree of crystallization, reaching maximum up-conversion intensity of the film.     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.     

Low-temperature synthesis of Sr<Subscript>0.3</Subscript>Ba<Subscript>0.7</Subscript>Nb<Subscript>2</Subscript>O<Subscript>6</Subscript> ultrafine powder and its characteristics

Ultrafine strontium barium niobate (Sr_0.3Ba_0.7Nb₂O₆, SBN30) powders were prepared by urea method starting from a precursor solution constituting of Sr (NO₃)₂, Ba (NO₃)₂, NbF₅, urea and polyvinyl alcohol (PVA) as surfactant. Their structural behavior and morphology were examined by means of X-ray diffractometry (XRD) and Scanning electron microscopy (SEM). The results showed that the SBN30 powders crystallized to a pure tetragonal phase at annealing temperatures as low as 750 °C. The average particle size of SBN powders subjected to 750 °C was of the order of 150–300 nm. With increasing calcination temperature,however, the average particle size of the calcined powders increased. The SBN30 ceramic prepared from urea method can be sintered at temperature as low as 1,225 °C. The transition temperature from the ferroelectric phase to the paraelectric phase and the relative dielectric permittivity of the SBN30 powder were less than the corresponding values of the bulk ceramic. The permittivity and loss tangent (tan δ) at room temperature (1 kHz) was found to be 930 and below 0.025.     

Investigation of forming-gas annealed CeO<Subscript>2</Subscript> thin film on GaN

The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N₂ + 5% H₂) ambient on metal–organic decomposed cerium oxide (CeO₂) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO₂ phase transformation was reported and presence of CeO₂, α-Ce₂O₃, and β-Ga₂O₃ had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO₂ films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.     

Microwave dielectric properties of Bi(Sc<Subscript>1/3</Subscript>Mo<Subscript>2/3</Subscript>)O<Subscript>4</Subscript> ceramics for LTCC applications

A novel microwave dielectric ceramics Bi(Sc_1/3Mo_2/3)O₄ with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc_1/3Mo_2/3)O₄ ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO₄ ^2? tetrahedra. The dielectric loss of Bi(Sc_1/3Mo_2/3)O₄ ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc_1/3Mo_2/3)O₄ ceramic sintered at 875 °C/4 h, with dielectric constant?~?25, Q?×?f ~?51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~???70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Investigation of Li<Subscript>2</Subscript>Zn<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>-based temperature stable dielectric ceramics for LTCC applications

A low temperature co-fired ceramic (LTCC) was fabricated at 910 °C /2 h from the powder mixture of Li₂Zn₃Ti₄O₁₂, TiO₂ and a B₂O₃–La₂O₃–MgO–TiO₂ glass (BLMT), and the influence of TiO₂ on microstructure and dielectric properties of the composite was investigated in the composition range (wt%) of 20BLMT–(80???x)Li₂Zn₃Ti₄O₁₂–xTiO₂ (x?=?0, 2.5, 5, 7.5, 9 and 10). The results showed that all samples consisted of Li₂Zn₃Ti₄O₁₂, TiO₂, LaBO₃ and LaMgB₅O₁₀ phase. And LaBO₃, LaMgB₅O₁₀ and a small amounts of TiO₂ were crystallized from BLMT glass during sintering process. As x increases, dielectric constant and temperature coefficient of resonance frequency of the composites demonstrated gradually increase, whereas the quality factor of the sample of x?=?0 wt% was about 41,500 GHz and the ones maintained stable at a high level of 49,000–51,000 GHz for other samples. The composite with x?=?9 wt% had an optimal microwave dielectric properties with the dielectric constant of 20.2, quality factor of 50,000 GHz and temperature coefficient of resonant frequency of ??0.33 ppm/°C.     

Investigation of density of states and electrical properties of Ba<Subscript>0.5</Subscript>Co<Subscript>0.5</Subscript>Bi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> nanoceramics prepared by chemical route

Barium-cobalt-bismuth-niobate, Ba_0.5Co_0.5Bi₂Nb₂O₉ (BCoBN) nanocrystalline ferroelectric ceramic was prepared through chemical route. XRD analysis showed single phase layered perovskite structure of BCoBN when calcined at 650 °C, 2 h. The average crystallite size was found to be 18 nm. The microstructure was studied through scanning electron microscopy. The dielectric and ferroelectric properties were investigated in the temperature range 50–500 °C. The dielectric constant and dielectric loss plot with respect to temperature both indicated strong relaxor behavior. Frequency versus complex impedance plot also supported the relaxor properties of the material. The impedance spectroscopy study showed only grain conductivity. Variation of ac conductivity study exhibited Arrhenius type of electrical conductivity where the hopping frequency shifted towards higher frequency region with increasing temperature. The ac conductivity values were used to evaluate the density of state at the Fermi level. The minimum hopping distance was found to be decreased with increasing temperature.     

Low-firing Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> microwave dielectric ceramics with BaCu(B<Subscript>2</Subscript>O<Subscript>5</Subscript>) additive

Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B₂O₅)-added Li₂ZnTi₃O₈ ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B₂O₅) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave dielectric properties. Microwave dielectric properties of ε _r = 23·1, Q × f = 22,732 GHz and τ _f = − 17·6 ppm/°C were obtained for Li₂ZnTi₃O₈ ceramic with 1·5 wt% BaCu(B₂O₅) sintered at 925°C for 4 h. The Li₂ZnTi₃O₈ +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature co-fired ceramic technology application.     

Structural and optical characterization of c-axis textured BaTiO<Subscript>3</Subscript> thin films on MgO fabricated by RF magnetron sputtering

In this paper, BaTiO₃ thin films were prepared by RF magnetron sputtering on MgO substrates and their properties such as the crystal structure and optical waveguide properties were investigated. The optimum deposition parameters, such as substrate temperature, deposition pressure, gas flow ratio, the RF power and the after annealing temperature, were obtained in order to get the best BaTiO₃ film quality. The XRD results show that highly c-axis textured BaTiO₃ thin films were successfully grown on MgO substrate. Films obtained under the optimum deposition parameters, substrate temperature of 650°C, RF power of 50 W, deposition pressure 18 mTorr and gas flow ratio O₂/(Ar+ O₂) of 15% namely, reaches a full width at half maximum intensity (FWHM) of BaTiO₃ (002) XRD peak of 0.25°. The FWHM of BaTiO₃ (002) XRD peak was further reduced to 0.24° via post-treatment with furnace annealing (at 800°C for 2 h) which indicates the film crystal quality is further improved. The bright and sharp TE modes measured by m-line spectroscopy of the BaTiO₃ film were observed indicating its possible application in optical waveguide.     

Effects of sintering temperature on the properties of Mn/Y codoped Ba<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>TiO<Subscript>3</Subscript> ceramics for tunable application

(Ba_0.67Sr_0.33)_1?3x/2Y _x Ti_1?y/2Mn _y O₃ [BST(Mn + Y), x = 0.006, y = 0.005] ceramics were fabricated by using citrate–nitrate combustion derived powder. Microstructure and dielectric properties of the BST(Mn + Y) ceramic samples were investigated within the sintering temperature ranged from 1220 to 1300 °C. Sintering temperature has a great influence on the microstructure and electrical properties of the ceramic samples. The dielectric properties, ferroelectric properties, and tunability are enhanced by optimizing sintering temperature. The relatively high tunability of 40 % (1.5 kV/mm DC field, 10 kHz) was obtained, and relatively low dielectric loss, <0.0052 (at 10 kHz, 20 °C) was acquired for BST(Mn + Y) samples sintered at 1275 °C for 3 h. Both the low dielectric loss and enhanced tunable properties of BST(Mn + Y) are useful for tunable devices application.     

Influence of sintering temperature on microstructures and dielectric properties of ZnO-MgO-TiO<Subscript>2</Subscript>-CaO ceramics

Microwave dielectric properties of ZnO–MgO–TiO₂–CaO (ZMTC) ceramics were investigated as a function of sintering temperatures by the conventional solid-state method. Sintering characteristics, microstructures, and microwave dielectric properties of ZMTC ceramics were studied as a function of sintering temperature from 1210 to 1290 °C. The variation trend of ε_r and Q? value was in accordance with variation trend of relative density. With increasing sintering temperature, the density, ε_r and Q? values increased, saturating at 1230 °C with excellent microwave properties of ε_r = 22.5, Q? = 22.1 × 10⁴ GHz, and TCF = 23.1 ppm/°C.     

Effect of Pb(Ti,Sn)O<Subscript>3</Subscript> on the dielectric properties of high dielectric constant X8R BaTiO<Subscript>3</Subscript>-based ceramics

The high dielectric constant X8R dielectric materials could be sintered at 1,240 °C by doping 2.5 mol% Pb(Ti,Sn)O₃ additives into the BaTiO₃ ceramics, with a dielectric constant greater than 3,400 at 25 °C, dielectric loss lower than 2.0% and temperature coefficient of capacitance (TCC) less than ±15% from −55 to 150 °C, which satisfied X8R specification. The effects of Pb(Ti,Sn)O₃ on the microstructure and dielectric properties of BaTiO₃-based ceramics were investigated. Doped with Pb(Ti,Sn)O₃ additives, the partial solid solution was formed between Pb(Ti,Sn)O₃ and BaTiO₃. Due to the high Curie point of Pb(Ti,Sn)O₃, the Curie point of the ceramics was markedly shifted to higher temperature about 150 °C, and the temperature coefficient of capacitance curves was flattened. The increase of the tetragonality (c/a ratio) and the fine microstructure were resulted in the increase of dielectric constant. With Pb(Ti, Sn)O₃ content up to 3 mol%, the depression of Ti⁴⁺’s polarization and the decrease of the tetragonality (c/a ratio) were resulted in the decrease of dielectric constant.     

Dielectric properties of B<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Sm(Co<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics at microwave frequency

The microwave dielectric properties and the microstructures of Sm(Co_1/2Ti_1/2)O₃ ceramics with B₂O₃ additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of Sm(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. It is found that Sm(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B₂O₃ addition. At 1,290 °C, Sm(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% B₂O₃ addition possess a dielectric constant (ε _r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of −11.4 ppm/ °C. The B₂O₃-doped Sm(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.