Noise in SIS microwave mixers

It is proposed that the noise in an SIS (superconductor-insulator-superconductor) microwave mixer is shot noise, and that it can be treated in a similar manner to the noise in Schottky barrier diodes. A noise temperature is defined, and how it can be optimized is indicated. An extension of the noise temperature concept of the source is used that makes noise temperatures additive at all frequencies.     

Quasi-optical slot antenna SIS mixers

A quasi-optical SIS mixer designed for efficient radiation coupling is described. The mixer uses a twin-slot antenna which has the advantages of a good beam pattern and a low impedance. The radiation and impedance characteristics of the antenna were obtained from a moment-matched calculation. Tapered superconducting microstrip transmission lines are used to carry the radiation from the slot antennas to the tunnel junction. The effective impedance seen by the tunnel junction is quite low, about 4 Ω, which allows micron-size junctions to be used at 500 GHz. The mixers have been fabricated using Nb/Al-oxide/Nb tunnel junctions and a receiver noise temperature of 420 K (DSB) was measured at 490 GHz, which is the best yet obtained for a quasi-optical mixer at this frequency. The comparatively large junction area increases the mixer saturation power and allows strong suppression of noise from the Josephson effect by the application of a magnetic field of modest strength     

SIS quasiparticle mixers with bow-tie antennas

We have designed and evaluated planar lithographed W-band SIS mixers with bow-tie antennas and several different RF cou;ling structures. Both Pb-In-Au/Pb-Bi and Nb/Pb-In-Au junctions were used, each with ωR_NC«1. Single junctions and series arrays of five junctions directly attached to bow-tie antennas with no additional coupling structure gave poor performance, as expected. Single junctions with inductive microstrips and five-junction arrays with parallel wire inductors gave good coupling over bandwidths of ～5 and 25 percent respectively. Good agreement was found between design calculations based on a simple equivalent circuit and measurements of the frequency dependence of the mixer gain. When good coupling was achieved, typical values of mixer gain G_M (DSB)?0 dB, noise T_M(DSB)?150 K, and receiver noise ～200 K were observed. These measurements are referred to the cryostat window. When corrected for the estimated loss between the cryostat window and the antenna terminals, these values of gain are comparable to those observed for W-band waveguide mixers with IF matching, but the noise is significantly higher. There is evidence that ～100 K radiation surrounding the mixer reduces the gain and increases the noise. No systematic difference was observed between the performance of Pb-In-Au/Pb-Bi junctions and Nb/Pb-In-Au junctions when the area of the latter was made three times smaller and the current density three times larger so as to maintain the same capacitance and resistance.     

Integrated tuning elements for SIS mixers

The use of inductive elements to tune out the junction capacitance in SIS mixers is examined. Two new integrated tuning structures are introduced which overcome the limitations of earlier designs.     

Noise in transistor mixers

Starting from the physical sources of noise in junction transistors, an equivalent noise circuit for a high frequency mixer circuit is presented. By means of formulas which have been derived for normal amplifiers and mixers the noise current components in the collector circuit are computed. These noise current components at the intermediate frequency are due to diverse amplifying and mixing processes. The dependence of the derived noise factor upon working point, generator output resistance, frequency and oscillator voltage is verified. The noise figure exhibits a minimum not only as a function of the generator output resistance but also as a function of the collector direct current. The noise figure may be optimized by choosing appropriate values for the circuit components and the operating point. Finally, the application of the noise formula to a dc-stabilized mixer stage is presented.     

Josephson effect gain and noise in SIS mixers

The authors report measurements of gain and noise in SIS mixers at 230 and 492 GHz. Measurements were made of relatively high gain and noise associated with Josephson currents that have not been previously reported. These measurements show that Josephson currents are increasingly important as operating frequencies are raised. The techniques used to make these measurements are discussed. Measurements made with hot and cold black-bodies are shown to be inaccurate at high frequencies. The problem is that SIS mixers do not always respond linearly to the signal power incident on them. This is particularly important when (1) very broad band mixers are used and (2) Josephson effect currents are important. Both of these circumstances are present in the quasioptical SIS mixers favored for 500 GHz and higher. Monochromatic signals were used to measure gain and noise to get around these problems     

Some recent developments in the design of SIS mixers

SIS mixers in which superconducting tuning elements are integrated with the tunnel junctions have resulted in very low noise heterodyne receivers in the range 68–260 GHz. Above ～120 GHz the need for extremely small reduced-height waveguides is avoided by mounting the SIS junctions in a suspended-stripline circuit coupled to a full-height waveguide by a broadband probe. The special characteristics of coplanar transmission line permit the design of SIS mixers with low parasitic reactances. Such a mixer operates over the full WR-10 band (75–110 GHz) without mechanical tuners.     

Embedding impedance approximations in the analysis of SIS mixers

The adequacy of three approximations to J.R. Tucker's (1979) quantum theory of mixers is examined. They are: (i) the usual three-frequency approximation, which assumes a sinusoidal local oscillator (LO) voltage at the junction and a short-circuit at all frequencies above the upper sideband; (ii) a five-frequency approximation, which allows two LO voltage harmonics and five small-signal sidebands; and (iii) a quasi five-frequency approximation in which five small-signal sidebands are allowed, but the LO voltage is assumed sinusoidal. These are compared with a full harmonic-Newton solution of Tucker's equations, including eight LO harmonics and their corresponding sidebands, for realistic SIS (superconductor-insulator-superconductor) mixer circuits. It is shown that the accuracy of the three approximations depends strongly on the value of ωR_NC for the SIS junctions used. For ωR_NC values in the range 0.5-10, the range of most practical interest, the quasi five-frequency approximation is a considerable improvement over the three-frequency approximation, giving results very close to those of the eight-harmonic solution, and should be suitable for much design work     

Noise in current-commutating CMOS mixers

A noise analysis of current-commutating CMOS mixers, such as the widely used CMOS Gilbert cell, is presented. The contribution of all internal and external noise sources to the output noise is calculated. As a result, the noise figure can be rapidly estimated by computing only a few parameters or by reading them from provided normalized graphs. Simple explicit formulas for the noise introduced by a switching pair are derived, and the upper frequency limit of validity of the analysis is examined. Although capacitive effects are neglected, the results are applicable up to the gigahertz frequency range for modern submicrometer CMOS technologies. The deviation of the device characteristics from the ideal square law is taken into account, and the analysis is verified with measurements     

Noise Stability of SIS Receivers

There is a strong interest in the submillimeter astronomy community to increase the IF bandwidth of SIS receivers in order to better facilitate broad spectral linewidth and continuum observations of extragalactic sources. However, with an increase in receiver IF bandwidth there is a decrease in the mixer stability. This in turn effects the integration efficiency and quality of the measurement. In order to better understand the noise mechanisms responsible for reducing the receiver stability, we employed a technique first described by D.W. Allan and later elaborated upon by Schieder et al. In this paper we address a variety of factors that degrade the noise stability of SIS receivers. The goal of this exercise is to make recommendations aimed at maximizing SIS receiver stability.     

Scaled model measurements of embedding impedances for SIS waveguide mixers

Several scaled models have been used to determine the contributions of various waveguide mount parameters to the embedding impedance of a mm-wave SIS mixer. Measured effects of waveguide height, substrate orientation and width, junction location, lead inductance and RF-filter impedance are presented and discussed.     

Analytical prediction for the optimum operating conditions of SIS mixers

Using Tucker's quantum theory of mixing and a quasi five-frequency approximation proposed by Kerr et al., this paper explores the optimum operating conditions of SIS mixers in the frequency region of 100 to 650 GHz. Four parameters (i.e., ΩR_nC_j product, normal state resistance R_n, RF source admittance (R_rf ^?+jB), and IF load resistance R_if) affecting the performance of an SIS mixer have been investigated. Our results indicate that, independent of the absolute value of R_n, the SIS mixer performance is dominated by R_rf/R_n and R_if/R_n; and that the mixer performance becomes quite insensitive to the ΩR_nC_j product, as the mixer operating frequency goes up to submillimeter wavelengths. Concerning all properties of an SIS mixer, the optimum R_rf/R_n value seems proportional to f^1/n (n≈2), and the optimum R_if/R_n and jB/G_n values are relatively independent of frequency, about 0.5 to 1.5 and ?j0.5 to ?j1.0 respectively.     

Wide-band low noise MM-wave SIS mixers with a single tuning element

Several SIS quasiparticle mixers have been designed and tested for the frequency range from 80 to 115 GHz. The sliding backshort is the only adjustable RF tuning element. The RF filter reactance is used as a fixed RF matching element. A mixer which uses a single 2×2 μm² Pb-alloy junction in a quarter-height waveguide mount has a coupled conversion gain of G_M(DSB)=2.6±0.5 dB with an associated noise temperature of T_M(DSB)=16.4±1.8 K at the best DSB operation point. The receiver noise temperature T_R(DSB) is 27.5±0.8 K for the mixer test apparatus. This mixer provides a SSB receiver noise temperature below 50 K over the frequency range from 91 to 96 GHz, the minimum being T_R(SSB)=44±4 K. Another mixer with an array of five 5×5 μm² junctions in series in a full-height wave-guide mount has much lower noise temperature T_M(DSB)=6.6±1.6 K, but less gain G_M(DSB)=?5.1±0.5 dB.     

Analysis of SIS heterojunctions for use as mm-wave mixers exhibiting coversion gain

We apply the quantum formulation of heterodyne mixer theory to SIS heterojunctions (junctions between dissimilar superconductors). Conversion gain is predicted over a wide range of mm-wave frequencies in the 3-port Y-mixer model by exploiting the naturally occurring region of negative conductance in the DC I-V characteristic. In the signal frequency range 50–250 GHz this region persists in the pumpedjunction I–V characteristic for local oscillator power <1 nW and leads to a negative conductance at the mixer's IF port.     

Noise figure and conversion loss of self-excited Gunn-diode mixers

Gunn-effect oscillators, used as self-excited mixers in X band/v.h.f. band convertors, are investigated. Noise figure and conversion loss are measured. It is shown that both fairly high oscillator Q factor and proper matching of the input signal to the Gunn diode leads to mixers comparable in performance with usual microwave mixers. Because of the negative differential resistance of Gunn diodes, conversion gain is easily realisable.     

Noise in RF-CMOS mixers: a simple physical model

Flicker noise in the mixer of a zero- or low-intermediate frequency (IF) wireless receiver can compromise overall receiver sensitivity. A qualitative physical model has been developed to explain the mechanisms responsible for flicker noise in mixers. The model simply explains how frequency translations take place within a mixer. Although developed to explain flicker noise, the model predicts white noise as well. Simple equations are derived to estimate the flicker and white noise at the output of a switching active mixer. Measurements and simulations validate the accuracy of the predictions, and the dependence of mixer noise on local oscillator (LO) amplitude and other circuit parameters     

Production of high quality Nb/Al-oxide/Nb SIS trilayers for submillimeter wave mixers

Owing to a very sharp nonlinearity in the quasiparticle currentvoltage characteristic, which fortuitously occurs on the scale of a few millivolts rather than a few volts as with semiconductor devices, superconductor/insulator/superconductor (SIS) tunnel junctions are the most sensitive detectors for heterodyne mixing at millimeter and submillimeter wavelengths. They can also provide sources of coherent local oscillator power at very high frequencies; more broadly, they have a number of interesting applications as fast, low-power logic elements and as detectors at optical wavelengths. For submillimeterwave mixers, in many ways the most demanding of these applications, the Nb/Al-oxide/Nb material system has emerged as the system of choice to frequencies of ～ 700 GHz and beyond. Production of SIS devices requires careful attention to a number of critical microfabrication issues, and I describe here some of the insights gained from developing a process for high-quality niobium trilayers that successfully yielded small-area junctions with unusually low sub-gap leakage current.     

Characterization of the IF Noise of a Submillimeter SIS Receiver

A fitting method is presented here for the accurate characterization of the IF noise contribution of a sub-millimeter SIS receiver. By fitting the mixer's IF output power response and junction's IV curve of an SIS mixer without LO pumping, we can obtain the IF noise contribution, the physical temperature of the isolator connected just behind the SIS mixer, the output mismatching of the mixer, and the total gain of the IF chain. Differing from a conventional method, which only uses the normal-state (linear) branch of the junction's IV curve, the method proposed here also includes the nonlinear portion around the gap voltage. The dynamic resistance in this portion is varied dramatically, providing us a good probe to characterize the output mismatching of the mixer, as well as other parameters.