基底的晶向和氧化层厚度对坡莫合金薄膜的影响

利用磁控溅射的方法,在不同规格的硅片上制备相同的NiFe薄膜,主要研究不同晶向的硅片对薄膜磁阻率的影响,以及(100)晶向硅片不同氧化层厚度对薄膜的影响。通过测试磁阻率、方阻,再综合X射线衍射分析,得到以下结论:由于(111)晶向基底与NiFe主峰的晶向相同,对NiFe薄膜有诱导作用,因此溅射薄膜的晶粒大,内部缺陷少,内部质点排列规则,且NiFe(111)含量高,减弱了载流子与声子、载流子与缺陷的散射作用,降低了方阻,从而增大了磁阻率;在退火处理后,磁阻率出现明显增幅,且仍高于(100)晶向基片上NiFe薄膜的磁阻率。在(100)晶向基底上制备的NiFe薄膜,氧化层厚度对其薄膜质量影响不大。     

基片表面粗糙度对坡莫合金AMR以及磁性能的影响

利用霍尔离子源轰击Si基片获得了不同表面粗糙度的基片,然后利用磁控溅射方法制备了一系列Ta(5nm)/Ni 80Fe 20(12nm)/Ta(2nm)薄膜样品,重点研究了基片表面粗糙度对薄膜结构和各向异性磁阻效应的影响。采用AFM测量基片的表面粗糙度,采用四探针法测量薄膜的各向异性磁阻效应。研究结果表明,随着基片表面粗糙度的增加,坡莫合金的AMR值显著降低,且ΔH显著增加。     

正偏压对纳米金刚石薄膜结构和电阻率的影响

采用电子辅助热丝化学气相沉积工艺, 在1kPa反应气压和施加不同的偏流条件下, 沉积了纳米金刚石薄膜. 用X射线衍射, 场发射扫描电镜和半导体特性表征系统对该薄膜进行了表征和分析. 结果表明, 施加偏流可以使薄膜晶粒呈现明显的(110)晶面择优取向, 表面形貌发生较大变化. 当偏流为8A时, 薄膜晶粒达到最小值, 约为20nm, 薄膜表面也最光滑. 本文讨论了在低气压和电子轰击条件下(110)晶面择优取向的形成机制及其对薄膜显微形貌和电阻率的影响关系.     

ZnO∶Al薄膜的制备和工艺参数对其电阻率的影响

:Zn O∶ Al是一种 N型半导体材料 ,具有透明氧化导电薄膜优良的光电特性 ,本文着重地介绍了直流和射频磁控反应溅射下 ,各种工艺参数对 Zn O∶ Al薄膜电阻率的影响     

薄膜厚度对多层膜巨磁阻抗效应的影响研究

采用磁控溅射方法在玻璃基片上制备了FeSiB／Cu／FeSiB多层膜,在100kHz～40MHz范围内研究了FeSiB薄膜厚度对FeSiB／Cu／FeSiB多层膜巨磁阻抗效应的影响。当磁场施加在薄膜的纵向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应。当FeSiB薄膜的厚度为1．8μm时,在频率3．2MHz、磁场2．4kA／m时,多层膜巨磁阻抗效应达最大值13．5％;在磁场为9．6kA／m时,巨磁阻抗效应为-9．2％。然而,当FeSiB薄膜的厚度为1μm时,多层膜的巨磁阻抗效应在频率40MHz、磁场1．6kA／m时达最大值5．8％。另外,当磁场施加在薄膜的横向时,薄膜表现出负的巨磁阻抗效应。对于膜厚为1．8μm的FeSiB薄膜,在频率5．2MHz、磁场9．6kA／m时,巨磁阻抗效应为-12％。可见巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及FeSiB薄膜的厚度有关。     

不同厚度分层沉积对多层NiFeCo/Ag薄膜GMR效应的影响

用射频磁控溅射法制备了调制周期分别为5 nm、10 nm、15 nm、20 nm的NiFeCo/Ag非连续多层膜.用俄歇能谱仪测量薄膜的成分,用原子力显微镜观测NiFeCo膜层及Ag膜层的表面形貌,用四探针法测量了溅射态的及在280℃、360℃、400℃退火后的多层膜的GMR值.结果表明:薄膜厚度越大,NiFeCo膜层及Ag膜层的表面粗糙度越大.在经各种不同温度退火后,具有[NiFeCo(10nm)/Ag(10nm)]×20结构的多层膜的GMR效应均比其它结构的多层膜的GMR效应强.退火温度也会影响多层膜的GMR值.经360℃退火后,在79.6 kA/m的外加饱和场下[NiFeCo(10nm)/Ag(10nm)]×20呈现出最强的巨磁电阻效应,其GMR值达到11%.     

过渡层ZrO2对不同沉积厚度TiO2薄膜结构的影响

TiO2作为高介电常数材料已被广泛研究.为了防止TiO2与Si基底发生反应,在Si与TiO2之间加入与TiI2结构相似热稳定性好的ZrO2作为过渡层.改变TiO2薄膜厚度,并在900℃对薄膜进行1h退火处理.通过XRD分析显示,随着TiO2厚度减小,各衍射峰强度逐渐降低,但各峰位及其相对强度无明显变化.通过SEM可以发现,热处理前各薄膜均无裂纹和孔洞.热处理后,TiO2厚度为150m及80nm的薄膜平整光滑无裂纹孔洞,晶粒排列致密晶界清晰,当TiO2厚度降为30nm时,薄膜仍平整光滑,只在晶界上出现因热处理而产生的缩孔.     

原子层沉积工艺制备催化薄膜厚度对生长碳纳米管阵列的影响

通过原子层沉积(ALD)工艺在硅基底依次沉积氧化铝缓冲层薄膜和氧化铁催化薄膜, 然后利用管式炉进行水辅助化学气相沉积(WACVD)生长垂直碳纳米管阵列(VACNTs)。结果表明: ALD工艺制备的氧化铁薄膜经还原气氛热处理可形成碳纳米管阵列生长所需的纳米催化颗粒; 氧化铁薄膜厚度与纳米催化颗粒大小以及生长出的碳纳米管阵列的结构密切相关。当氧化铁薄膜厚度为1.2 nm时, 生长出的碳纳米管阵列管外径约为10 nm, 管壁层数约为5层, 阵列高度约为400 μm。增大氧化铁薄膜的厚度, 生长出的碳纳米管阵列外径和管壁数增加, 阵列高度降低。实验还在硅基底侧面观察到了VACNTs, 表明ALD工艺可在三维结构上制备催化薄膜用于生长VACNTs。     

TiO2种子层对Bi 3.15 Nd 0.85 Ti 3 O 12铁电薄膜的结晶取向和铁电性能的影响

用sol—gel法分别制备了直接沉积在Pt／Ti／SiO2／Si衬底上和加入了TiO2种子层的Bi3．15Nd0．85Ti3O12（BNT）铁电薄膜，研究了种子层对BNT薄膜结构和电学性能的影响．XRD结果表明直接沉积在Pt／Ti／SiO2／Si衬底上的BNT薄膜具有（117）和（001）的混合取向，而加入TiO2种子层之后薄膜的最强峰为（200）取向；FE-SEM显示具有TiO2种子层的BNT薄膜，其表面主要是由具有非C轴取向的晶粒组成且更为致密；直接沉积的BNT薄膜和具有TiO2种子层的BNT薄膜的剩余极化Pr值分别为26和43．6μC／cm^2，矫顽场强＆分别为91和80．5kV／cm；疲劳测试表明两种薄膜均具有良好的抗疲劳特性，TiO2种子层的引入并没有降低BNT薄膜的疲劳特性；两种薄膜的漏电流密度均在10^-6-10^-5A／cm^2之间．     

Cr-CrN-Cr-CrAlN多层膜厚度对结构和性能的影响

采用电弧离子镀技术在TC4钛合金表面制备不同厚度的Cr-CrN-Cr-CrAlN多层膜,研究了多层膜厚度对其结构及性能的影响。利用扫描电子显微镜、X射线衍射仪、显微硬度计、划痕仪、应力测试仪、砂粒冲蚀试验仪和拉伸试验机检测分析了多层膜的表面及截面形貌、微观结构、硬度、结合力、残余应力、抗砂粒冲蚀性能和拉伸性能等。结果表明：随着多层膜厚度的增加,膜层表面颗粒增多,表面质量略有下降,择优取向由（200）晶面逐渐向（111）晶面转变;随着厚度的增加,残余应力逐渐增加,膜层硬度、膜基结合力、裂纹扩展抗力先上升后下降,在厚度为10.58μm时达到最佳,其硬度为3404Hv、结合力为58.6N、裂纹扩展抗力为758.49,抗砂粒冲蚀性能提高3倍以上;TC4钛合金表面镀多层膜后,屈服强度和抗拉强度均略有提升,但断后伸长率降低,当膜层厚度为14.50μm时,断后伸长率较基材降低30%,断裂机制由韧性断裂转变为脆性断裂。在一定范围内增加膜层厚度有利于提升性能,但需合理控制其厚度以减小对钛合金基材的负面影响。     

Effects of the substrate temperature on the Cu seed layer formed using atomic layer deposition

Cu has replaced Al as the main interconnection material in ultra-large integrated circuits, reducing resistance capacitance delay and yielding higher electro-migration reliability. As feature size decreases, however, it has become more difficult to produce reliable Cu wiring. We studied a Cu seed layer deposited using plasma enhanced atomic layer deposition (PEALD). The electrical properties of the PEALD Cu thin film with sub-10 nm thickness were determined by the continuities and morphologies of the films. At a deposition temperature of 150 °C, the resistivity of Cu thin films was 5.2 μΩ-cm and the impurity content was below 5 atomic %. Based on these results, Cu seed layers were deposited on 32-nm Ta/SiO2 trench substrates, and electrochemical plating was performed under conventional conditions. A continuous seed layer was deposited using PEALD, resulting in a perfectly filling of the 32-nm sized trench.     

Induced magnetic anisotropy and strain in permalloy films deposited under magnetic field

Field induced magnetic-anisotropy is a very important but poorly understood property. There have been many hypotheses on the origin of the phenomenon, e.g. strain, atomic pair ordering, etc., but little experimental evidence exist. This study prepares 100 nm thick Permalloy films having the field-induced-magnetic-anisotropy and carefully measure strains, i.e. interplanar distance of crystallographic (111) planes in various directions, using high power synchrotron radiation and precise Grazing Incidence X-Ray Diffraction method. The result delineates that the field-induced-magnetic-anisotropy has a strong correlation with the strain-anisotropy in the film.     

利用NiFeCr种子层提高AMR薄膜信噪比研究

NiFeCr种子层可以明显降低NiFe薄膜的低频噪声,提高信噪比。制备态下NiFeCr为种子层的NiFe薄膜的低频噪声比以Ta打底的NiFe薄膜的低频噪声下降10倍,250℃下保温2h退火后以Ta打底的NiFe薄膜的低频噪声因扩散而明显上升,而NiFeCr为种子层的NiFe薄膜的低频噪声则有小幅下降。电镜分析表明NiFeCr种子层与NiFe层形成良好的晶格匹配关系,可以基本实现NiFe完全外延式的生长。     

Effects of sputtering pressure and Al buffer layer thickness on properties of AZO films grown by rf magnetron sputtering

Transparent and conductive Al-doped (2 wt.%) zinc oxide (AZO) films were deposited on inexpensive soda-lime glass substrates by using rf magnetron sputtering at room temperature. This study analyzed the effects of argon sputtering pressure, which varied in the range from 0.46 to 2.0 Pa, on the morphological, electrical and optical properties of AZO films. The only (0 0 2) diffraction peak of the film were observed at 2θ～34.45°, exhibiting that the AZO films had hexagonal ZnO wurtzite structure, and a preferred orientation with the c-axis perpendicular to the substrate. By applying a very thin aluminum buffer layer with the thickness of 2 nm, findings show that the electrical resistivity was 9.46 × 10⁻⁴ Ω-cm, and the average optical transmittance in the visible part of the spectra was approximately 81%. Furthermore, as for 10 nm thick buffer layer, the electrical resistivity was lower, but the transmittance was decreased.     

The effect of seed layer thickness on alignment and morphology of ZnO nanorods

Thin films of ZnO of 20, 40,160 and 320 nm thickness were deposited on Si (100) substrates by rf-magnetron sputtering and then nanorods were grown on the seed layer at 95 °C for 2 h. The ZnO nanorods were synthesized in C₆H₁₂N₄ and Zn (NO₃)₂·6H₂O solution by a hydrothermal method and the effect of seed layer thickness on the alignment, diameter, density and growth rate of nanorods was studied.The results revealed that the alignment of nanorods depended on crystallinity, grain size and roughness frequency of the sputtered seed layer, so that, with increase of seed layer thickness, crystallinity improved. In addition the grain size increased and the roughness frequency decreased and hence alignment and diameter of nanorods increased.Finally, we present a model for the effect of seed layer thickness on the alignment and diameter of the nanorods.     

氮化碳薄膜的电化学沉积及其电阻率研究

在ITO导电玻璃基底上,采用二氰二胺分散在DMF(N,N-二甲基甲酰胺)中形成的溶液做沉积液,阴极电化学沉积了CNx薄膜。X射线光电子能谱(XPS)和傅立叶转换红外光谱(FTIR)的分析结果表明,沉积的CNx薄膜的N/C比为0.7左右,碳和氮主要以C-N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。拉曼光谱测试发现其存在多个吸收峰,对其进行分析的结果表明薄膜样品中含有α-C3N4和β-C3N4相的成分。电阻率测试表明,氮化碳薄膜的电阻率值达到1012～1013Ω·cm。     

Effects of dilution ratio and seed layer on the crystallinity of microcrystalline silicon thin films deposited by hot-wire chemical vapor deposition

We deposited microcrystalline silicon (μc-Si) by hot-wire chemical vapor deposition (HWCVD) at different thickness and dilution ratio, with and without seed layer. As the dilution ratio increased, we observed an increase in the amount of microcrystalline phase in the film, a change in the structure of the grains and a loss of the (220) preferential orientation. The films deposited over a seed layer had a larger fraction of crystalline phase than films deposited with the same parameters but without a seed layer. For high dilution ratios (R=100), most of the film grows epitaxially at the interface with the Si substrate, but a microcrystalline film slowly replaces the single-crystal phase. For low dilution ratios (R=14), the film starts growing mostly amorphously, but the amount of crystalline phase increases with thickness.     

Effect of TiOx seed layer on the texture and electric properties in La and Ca modified PbTiO3 thin films

Lanthanum-and calcium-modified PbTiO₃ (PLCT) ferroelectric thin films were successfully prepared on Pt(111)/Ti/SiO₂/Si substrates by pulsed laser deposition. Influence of TiO_x seed layer on texture and electric properties of PLCT films was investigated. It is found the PLCT films without seed layer exhibited highly (100)-textured, while using about 9 nm TiO_x as seed layer lead to highly (301)-textured. The PLCT film with TiO_x seed layer possess higher remnant polarization (Pr = 26 µC/cm²), better pyroelectric coefficient and figure of merit at room temperature (p = 370 µC/m²k, F_d = 190 × 10^− 5 Pa^− 1/2) than that of film without seed layer. The mechanism of the enhanced electric properties was also discussed.     

论零点振动能与Casimir力

在真空中放置一对平行的金属板（间距很小）,两板会由于一个微弱（可测出）的力而有相互靠近的趋势。这种Casimir效应可用量子理论中的零点能（ZPE）解释。科学家们都认为Casimir力存在,但对其产生的原因却有不同看法。空虚空间是否具有能量,其答案或许将决定宇宙的命运。在自然界和人类实验室中,有许多异常现象可用Casimir效应及挠场理论作出说明。     

非均匀退磁场对NiFe薄膜AMR元件性能的影响

采用磁控溅射制备了NiFe各向异性磁电阻(AMR)薄膜,经过光学曝光及离子刻蚀将NiFe薄膜制成了宽度w=20μm、厚度t=20nm、长度l=2.5mm的AMR元件.测量了NiFe元件的磁电阻效应.考虑沿宽度方向退磁场的非均匀性,计算了磁电阻比率.结果表明,理论和实验符合.