纳米氧化层对坡莫合金薄膜性能的影响

采用磁控溅射的方法制备了Ta/NiFe/Ta磁电阻薄膜,分别将CoFe-NOL和Al2O3插层引入NiFe薄膜,研究纳米氧化层(NOL)对NiFe薄膜性能的影响。实验结果表明:将CoFe-NOL引入NiFe薄膜,CoFe-NOL对NiFe薄膜性能有重要影响,并且CoFe-NOL在薄膜中的位置不同影响效果也不同;CoFe-NOL处于Ta/NiFe界面时,由于破坏了NiFe薄膜的织构,导致了NiFe薄膜的各向异性磁电阻(AMR)值的减小和矫顽力的上升;CoFe-NOL处于NiFe/Ta界面时,则不会破坏NiFe薄膜的织构,其AMR值和矫顽力基本没有变化。将Al2O3插层引入NiFe薄膜,由于Al2O3插层的"镜面反射"作用,合适厚度的Al2O3插层可以改善薄膜的微结构,提高薄膜的磁电阻值,改善薄膜的磁性能。当Al2O3插层厚度为1.5 nm时,NiFe薄膜有最佳的微结构和性能。     

原子层沉积LiPON薄膜的表面钝化研究

LiPON是一种重要的固态电解质,然而LiPON薄膜会与空气中的水和CO2发生反应产生Li2CO3,导致器件的电学性能变差.本工作利用X射线光电子能谱研究了通过原子层沉积(ALD)技术生长Al2O3薄膜来钝化LiPON薄膜,并且对比了多种方案:在ALD生长Al2O3薄膜之前对样品表面不做预处理,利用O3作为生长Al2O...     

原位XPS分析Al2O3作为势垒层的Er2O3/Si结构

在超高真空条件下,通过脉冲激光沉积(PLD)技术制作了Er2O3/Al2O3/Si多层薄膜结构,原位条件下利用X射线光电子能谱(XPS)研究了Al2O3作为势垒层的Er2O3与Si界面的电子结构.XPS结果表明,Al2O3中Al的2p芯能级峰在低、高温退火前后没有变化;Er的4d芯能级峰来自于硅酸铒中的铒,并非全是本征氧化铒薄膜中的铒;衬底硅的芯能级峰在沉积Al2O 3时没有变化,说明Al2O3薄膜从沉积到退火不参与任何反应,与Si界面很稳定;在沉积Er2O3薄膜和退火过程中,有硅化物生成,表明Er2O3与Si的界面不太稳定,但随着Al2O3薄膜厚度的增加,其硅化物中硅的峰强减弱,含量减少,说明势垒层很好地起到了阻挡扩散的作用.     

高折射率材料吸收特性对193 nm HfO2/SiO2,Y2O3/SiO2,Al2O3/SiO2多层膜反射特性的影响

由单层HfO2，SiO2，Y2O3，Al2O3膜求出其折射率和消光系数色散曲线，据此计算出HfO2／SiO2，Y2O3／SiO2，Al2O3／SiO2的193nm多层膜反射膜曲线，并用电子束热蒸发的方法进行镀制。由分光光度计测量样品的透射率和绝对反射率，求出了各种膜层的吸收曲线。结果发现HfO2／SiO2，Al2O3／SiO2反射率实验结果与理论结果吻合得很好，而Y2O3／SiO2的理论曲线偏高。通过模拟Y2O3／SiO2的反射率曲线发现Y2O3的消光系数远大于由单层膜实验得出的结果。这说明Y2O3膜层的吸收特性与薄膜的制备工艺密切相关。     

Al_2O_3过渡层厚度对AZO薄膜性能的影响研究

采用磁控溅射法,在预先沉积了Al2O3过渡层的玻璃衬底上制备了性能优良的AZO薄膜。借助XRD、AFM、四探针仪和分光光度计对AZO薄膜的结构、表面形貌以及电学和光学性质进行了表征,并研究了Al2O3过渡层厚度对AZO薄膜性能的影响。结果表明:Al2O3过渡层的添加对AZO薄膜的表面形貌有一定影响;AZO薄膜的结晶质量随着过渡层厚度的增加先上升后下降;AZO薄膜的电阻率因过渡层的添加而明显降低,特别是在AZO薄膜较薄时;在添加了1～3 nm厚的过渡层后,160 nm厚的AZO薄膜的电阻率下降了44%左右;AZO薄膜的可见光透射率和光学带隙基本不受过渡层影响。     

FeGaB磁性薄膜中涡流损耗抑制方法的仿真

在体声波（BAW）磁电天线结构中，磁致伸缩层中的磁性薄膜在高频磁场中产生的感生电流会引起涡流损耗，进而影响天线器件的辐射性能。为了分析和抑制磁性薄膜的涡流损耗，利用有限元仿真法建立了FeGaB磁性薄膜的涡流损耗模型，根据涡流的趋肤效应，同时讨论了磁性薄膜表面和体内的涡流损耗。采用在FeGaB中插入Al2O3薄膜的隔离方法抑制涡流损耗，比较并讨论了Al2O3薄膜的3种不同隔法，分别得到表面和体内涡流抑制的最优隔法。综合考虑总涡流损耗的影响，提出了一种“交叉隔”方式为抑制总涡流损耗的最优隔法。仿真结果表明，采用该优化方法在磁性薄膜中加入10 nm Al2O3薄膜隔离后，总涡流损耗的抑制率高于65%。     

有机电致发光器件的新型薄膜封装技术研究

针对有机电致发光器件(OLED)在空气中水汽和O2作用下寿命下降的问题,提出一种对OLED进行薄膜封装方法。封装薄膜由电子束蒸镀Al2O3薄膜和原子层沉积(ALD,atomic layer deposition)Al2O3薄膜相结合形成。利用Ca薄膜电学测试方法测定封装薄膜的水汽透过率(WVTR)。具体实现方法是,采用玻璃作为衬底,在100nm的Al电极上蒸镀200nm的Ca膜,然后对整个系统进行薄膜封装,只留出Al电极的一部分作为探针接触电极。实验发现,采用电子束蒸镀结合ALD的Al2O3薄膜封装,Ca薄膜变成透明的时间比未封装或采用单一结构封装得到了延长。为了检验薄膜封装效果,制作了一组绿光OLED,器件结构为ITO/MoOX(5nm)/mMTDATA(20nm)/NPB(30nm)/Alq3(50nm)/LiF(1nm)/Al,实验结果表明,本文提出的薄膜封装方法对器件进行封装,器件的寿命得到了延长。     

PEALD制备的Al2O3薄膜在n-TOPCon太阳电池上的钝化性能

对采用等离子体增强原子层沉积(PEALD)法制备的Al2O3薄膜在n型单晶硅隧穿氧化层钝化接触(TOPCon)太阳电池正表面的钝化性能进行了研究.采用少数载流子寿命、X射线电子能谱(XPS)及J-V特性的测试分析,重点研究了 Al2O3沉积温度、薄膜厚度及薄膜形成后不同退火条件对钝化性能的影响,实现了低表面复合速率、良好钝化效果的产业化制备的Al2O3薄膜工艺.研究结果表明,在沉积温度为150℃、膜厚为5 nm、退火温度为450℃时,测试计算得出薄膜中O和Al的原子数之比为2.08,电池发射极正表面复合速率较低,达到了Al2O3钝化的最优效果,并且分析了 Al2O3薄膜的化学态和形成机理.利用其Al2O3薄膜工艺制备的n型单晶硅TOPCon太阳电池开路电压提升了 8 mV,电池的平均光电转换效率达到了 23.30％.     

沉积功率和退火工艺对PE-ALD氧化铝薄膜的影响

Al2O3薄膜常用于有机电子器件的稳定化封装.除了薄膜的水气渗透率特性,薄膜的表面粗糙度、润湿性和折射率等性能也会影响薄膜的最终封装效果.采用自制等离子增强原子层沉积(PE-ALD)系统在低温下成功制备了Al2O3薄膜,研究了沉积功率和退火参数对Al2O3薄膜微观形貌和性能的影响.结果表明,Al2O3薄膜的生长速率和折射率随沉积功率的增加分别呈现先增加后下降和不断增加的趋势,当沉积功率为1 800 W时,薄膜的线性生长速率达到0.27 nm/cycle,远高于传统热原子层沉积技术的沉积速率.退火处理不会改变Al2O3薄膜晶态,但改善了薄膜的表面粗糙度,降低了接触角和有机基团红外强度.得到了最佳的PE-ALD薄膜制备工艺条件,实现了对有机发光二极管器件的有效封装.     

一种中红外波段超材料结构吸波性能研究

对一种Al/Al2O3/Al多层膜结构的中红外超材料吸波体的吸波性能进行了研究,并分析了其吸波机理。该结构最上层为周期性排布的正方形Al膜阵列,中间介质层和底层分别为连续的Al2O3和Al薄膜。仿真结果表明,该多层膜结构理论上能够在10.6m实现完美吸波。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.