一种单锁存器CMOS三值D型边沿触发器设计

提出了一种只使用单个锁存器的CMOS三值D型边沿触发器设计.该电路是通过时钟信号的上升沿后产生的窄脉冲使锁存器瞬时导通完成取样求值.所提出的电路较之以往设计具有更为简单的结构,三值双轨输出时仅需24个MOS管.计算机模拟结果验证了所提出的触发器具有正确的逻辑功能、良好的瞬态特性和更低的功耗.此外,该设计结构极易推广至基值更高的多值边沿触发器的设计.     

低功耗四边沿触发器设计

根据在保持电路原有性能的前提下可通过降低时钟频率来降低系统功耗的原理和双边沿触发器的设计思想,本文将多值信号信息量大的优点应用于时钟网络上设计了基于三值时钟的四边沿触发器,消除了三值时钟的冗余跳变,从而通过降低时钟频率的方式达到降低功耗的目的。本文设计的四边沿触发器电路结构简单,既可以用于二值时序电路中也可以用于多值时序电路中。模拟结果表明,本文设计的四边沿触发器具有正确的逻辑功能且能有效地降低系统功耗。     

基于毛刺阻塞原理的低功耗双边沿触发器

当输入信号存在毛刺时,双边沿触发器的功耗通常会显著增大,为了有效降低功耗,提出一种基于毛刺阻塞原理的低功耗双边沿触发器。在该双边沿触发器中,采用了钟控CMOS技术C单元。一方面,C单元能有效阻塞输入信号存在的毛刺,防止触发器锁存错误的逻辑值。另一方面,钟控CMOS技术可以降低晶体管的充放电频率,进而降低电路功耗。相比其他现有双边沿触发器,该双边沿触发器在时钟边沿只翻转一次,大幅度减少了毛刺引起的节点冗余跳变,有效降低了功耗。与其他5种双边沿触发器相比,该双边沿触发器的总功耗平均降低了40.87%~72.60%,在有毛刺的情况下,总功耗平均降低了70.10%~70.29%,仅增加22.95%的平均面积开销和5.97%~6.81%的平均延迟开销。     

新型低噪声电流型CMOS边沿触发器设计

提出以电流信号表示逻辑值的新型低噪声触发器设计,用于高性能混合集成电路的设计中以减少存贮单元开关噪声对模拟电路性能的影响。所提出的设计包括主从型边沿触发器和单闩锁单边沿触发器。单个锁存器的电流型边沿触发器设计是通过在有效时钟沿后产生的窄脉冲使锁存器瞬时导通完成一次取样求值。与主从型触发器相比,单闩锁结构的触发器具有结构简单、直流功耗低的特点。采用0.25μm CM O S工艺参数的HSP ICE模拟结果表明,所提出的电流型触发器工作时,在电源端产生的电流波动远远小于传统的CM O S电路。     

一种CMOS静态双沿触发器的设计

提出一种ＣＭＯＳ静态双沿触发器结构,以单个锁存器构成记忆单元,而由一特殊的时钟模块产生控制信号,使锁存器在时钟上升和下降沿处瞬时导通,从而形成双沿触发的功能,最小的实现方案只用１４个管子,模拟证明其工作频率可达３００ＭＨｚ以上。     

CMOS可预置双边沿触发器的设计及其应用

本文从消除时钟信号冗余跳变而致的无效功耗的要求出发,提出一种基于CMOS传输门的双边沿触发器设计,并设置了它的直接预置控制端以使达到实用的要求。该触发器已用PSPICE程序模拟验证了具有完整的功能。使用该触发器设计时序系统的实例被演示。对模拟所得数据的计算结果表明,与采用相同功能的单边沿触发器的系统比较,由于工作频率减半可使采用双边沿触发器的系统功耗明显降低。     

低功耗双边沿触发器的逻辑设计

本文从消除时钟信号冗余跳变而致的无效功耗的要求出发,提出双边沿触发器的设计思想与基于与非门的逻辑设计．用ＰＳＰＩＣＥ程序模拟证实了该种触发器具有正确的逻辑功能,能够正常地应用于时序电路的设计,并且由于时钟工作频率减半而导致系统功耗的明显降低．     

时钟信号竞争型三值CMOS边沿触发器

本文利用时钟信号的竞争冒险现象,提出了CMOS时钟信号竞争型三值D型边沿触发器的逻辑设计.通过PSPICE程序模拟,证实了该设计具有正确的逻辑功能,而且与传统的三值D型维持阻塞触发器相比,它具有更简单的结构和更低的功耗.     

高性能半静态双边沿D触发器

在分析现有静态结构双边沿触发器和动态结构双边沿触发器优缺点的基础上,该文提出了半静态结构双边沿触发器设计。PSPICE模拟表明,新设计功能正确。与以往一些设计柏比,新设计在功耗、速度、功耗延迟秘以及减少MOS晶体管使用数目等方面都具有明显的优势,从而使新设计具有良好的综合性能。该文的另一个贡献是对双边沿触发器性能的测试方法进行了探讨,提出了测试双边沿触发器最高频率的新方法。     

时钟低摆幅双边沿低功耗触发器的设计

传统的时钟低摆幅触发器由于工作方式和电路结构不够合理,使得电路的结点电容和开关活动性较大,增加了电路的开关功耗.本文通过改进传统的时钟低摆幅触发器的工作方式和电路结构,设计了一种新型的时钟低摆幅双边沿触发器--反馈保持型时钟低摆幅双边沿触发器(Feedback Keeper Low-swing Clock Double-edge-triggered Flip-flop-FK-LSCDFF).模拟结果表明所设计的触发器具有正确的逻辑功能,跟传统的时钟低摆幅双边沿触发器相比,降低近17%的功耗.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.