电化学法制备Co(OH)2/Cu(OH)2异质结电极及其作为析氧电催化剂的研究

贵金属IrO₂和RuO₂被广泛认为是优异的析氧(OER)催化剂,但是高成本限制其应用与发展,故开发高效的非贵金属OER催化剂具有重大的实际意义和应用前景。采用简便的电化学法制备了一种三维异质结电极Co(OH)₂/Cu(OH)₂作为优良的OER催化剂。Co(OH)₂/Cu(OH)₂由于其三维异质结构,使其具有较大的比表面积和充足的活性位点,同时调节了表面Co的电子结构进而提高OER活性,表现出优良的催化性能。在1mol/L KOH溶液中,Co(OH)₂/Cu(OH)₂能在270mV的低过电位下达到10mA/cm²,并且能保持在100mA/cm²的大电流密度下较长时间进行OER反应,是一种优良的OER催化剂。     

AgI/NH2-UiO-66(Zr)异质结制备及其可见光催化性能

开发可见光响应型金属有机框架材料(MOFs)异质结,有望高效利用太阳能进行催化降解/减毒环境污染物。以氯化锆(ZrCl₄)和2-氨基对苯二甲酸(2-ATA)为原料,用溶剂热法制备了NH₂-UiO-66(Zr)作为基底MOFs,采用对离子沉淀法在其表面负载AgI,制备一系列AgI/NH₂-UiO-66(Zr)异质结复合光催化剂。通过XRD、BET、TEM、UV-Vis DRS、FT-IR、TGA及光电化学测试等手段对材料进行结构和光电响应性质表征。以Cr(VI)为模型污染物,探究复合材料在可见光照射下的光催化性能,以及影响其性能的各种因素：pH、初始Cr(VI)浓度、催化剂投加量、捕获剂种类及浓度。实验结果显示：当AgI负载量为20%时,优选得到的AgI/NH₂-UiO-66(Zr)具有最佳的光催化性能,可见光照射120 min后,Cr(VI)还原率为97.8%,远高于纯AgI和NH₂-UiO-66(Zr),拟合的一级动力学常数k分别是AgI和NH₂-UiO...     

g-C3N4/POPs异质结制备及其可见光催化性能

光催化技术是一种极具应用前景的环境修复技术,开发高效、稳定、具有可见光响应的光催化剂是其研究的重点之一。本文采用常压溶剂热法,以1, 3, 5-三(4-氨基苯基)苯(TAPB)和2, 5-二甲氧基苯-1, 4二甲醛(DMTP)为单体合成的共轭多孔有机聚合物TAPB-DMTP POP为基底,原位负载不同比例的g-C₃N₄,制备g-C₃N₄/POPs复合光催化剂。通过XRD、FTIR、BET、TGA、UV-Vis DRS、电流-时间(i-t)和EIS等测试方法表征了g-C₃N₄/POPs的化学结构与光学特性。在可见光条件下,选择Cr(Ⅵ)为模型污染物探究了不同gC₃N₄负载量的g-C₃N₄/POPs光催化还原效率,并对pH值、催化剂用量和底物浓度等影响因素进一步探究。结果表明：在pH=2条件下,g-C₃N₄/POP-2表现出了最佳...     

Bi2S3@BiOBr的原位合成及其可见光催化性能

采用溶剂热法合成BiOBr空心微球,并利用简单的离子交换原位生成Bi_2S_3,得到类核-壳结构的Bi_2S_3@BiOBr复合光催化剂。利用X射线衍射(XRD)、扫描电子显微镜(FE-SEM)和紫外-可见漫反射光谱(UV-Vis DRS)等手段对催化剂进行表征,并对其进行光电化学性能测试。实验表明,BiOBr与Bi_2S_3形成的异质结促进了光生载流子的转移和分离。Bi_2S_3@BiOBr在可见光作用下可以有效降解甲基橙,当Bi_2S_3的摩尔分数为8%时,样品具有最好的光催化性能。·O_2~-和h~+是Bi_2S_3@BiOBr光催化降解甲基橙的主要活性物种。     

一步溶剂热法合成Bi2S3/BiOBr多级异质结及其增强可见光光催化去除RhB的研究(英文)

近年来,随着工业的高速发展,环境污染问题日益加剧。光催化作为一种节能环保、应用前景广阔的技术,已成为环境污染治理领域的研究热点。早期光催化剂以TiO₂为主,但TiO₂的活性只有在紫外光照下才能被激发,因此国内外逐渐发展了众多可见光可激发的光催化剂。其中,溴氧化铋(BiOBr)作为一种新型的层状结构光催化剂,因具有独特的光学性质和特殊的电子结构,近年来受到越来越多的关注。然而,纯BiOBr在可见光范围内的吸收能力并不理想,这极大地限制了它的实际应用。目前,与其他具有优异可见光吸收能力的半导体耦合是提升BiOBr光催化活性的一种有效方法。本研究首次采用硫化钠作为硫源,通过简单的一步溶剂热法合成了二元三维Bi₂S₃/BiOBr多级异质结球状光催化剂。使用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、高分辨透射电子显微镜(HRTEM)、X射线光电子能谱(XPS)等手段表征了样品的结构与形貌。结构测试分析表明纳米花状的Bi₂S₃/BiOBr三维球体被成功...     

纳米棒状Ag3PO4/TiO2异质结复合材料的可见光催化性能

采用水热法制备了一维棒状TiO_2纳米材料,再通过原位生长法合成了棒状纳米Ag_3PO_4/TiO_2复合材料,制备了不同摩尔量的纳米棒状Ag_3PO_4/TiO_2异质结复合材料。通过X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)、X射线光电子能谱仪(XPS)、漫反射紫外-可见近红外光谱仪(UV-Vis-DRS)和电化学阻抗谱(EIS)对纳米棒状Ag_3PO_4/TiO_2异质结复合材料的晶体结构、形貌、光吸收特性和电子复合情况等进行了表征,并在可见光照射下研究了甲基橙和苯酚的光降解率。结果表明:制备的纳米棒状TiO_2具有更大的比表面积,为纳米Ag_3PO_4的负载提供更多的活性位点,提高了光利用效率;Ag_3PO_4/TiO_2复合材料有异质结的形成,其内建电场可有效提高电子-空穴对的分离效率,进而提高材料的光催化性能和稳定性。     

BiOCl/Bi2O3异质结复合光催化剂的制备和光催化性能研究

以五水硝酸铋、硝酸、氢氧化钠、盐酸为原料,用盐酸浸渍法制备了盐酸与氧化铋物质的量比分别为0.3∶1、0.5∶1、0.7∶1、1∶1的BiOCl/Bi2O3异质结新型复合光催化剂。用X射线衍射(XRD)、热重-差热分析(TG-DSC)和扫描电子显微镜(SEM)等手段对材料进行了表征。250 W高压汞灯照射下,用光催化降解罗丹明B反应来测试催化剂的光催化活性,结果表明BiOCl/Bi2O3复合光催化剂的性能明显优于单体Bi2O3。当盐酸与氧化铋物质的量比为0.7∶1时,BiOCl/Bi2O3催化剂的光催化活性最佳。最后研究了抑制剂对BiOCl/Bi2O3复合光催化剂降解罗丹明B的影响,发现三乙醇胺和碘化钾都有一定的抑制作用。     

纳米In2S3制备研究进展

硫化铟(In_2S_3)是一种重要的半导体材料,具有良好的导电性能、光学性能、声学性能及电子性能等,在纳米材料、微电子和太阳能领域有广阔的发展前景。In_2S_3纳米材料的制备方法主要有水热合成法、溶剂热合成法、喷雾热解法和超声法等,未来应注重开发低成本、高性能、环保绿色的合成方法。     

Bi2MoO6/BiVO4异质结光催化剂的制备及性能

本工作采用水热法+热处理法制备了Bi_2MoO_6/BiVO_4异质结复合光催化剂,并采用XRD、SEM、EDS-Mapping、XPS和UV-vis DRS对一系列样品进行了表征。结果表明:不同比例的Bi_2MoO_6异质复合BiVO_4均未改变BiVO_4的晶体结构,但由于二者之间形成了异质结结构,其结晶程度有所提高;与纯BiVO_4相比,复合光催化剂的光吸收边发生红移,对可见光的光响应范围扩大,Bi_2MoO_6与BiVO_4形成的异质结结构有利于提高光生电子-空穴的分离效率,从而表现出更高的光催化活性。当Bi_2MoO_6与BiVO_4的质量比为5%时,样品的光催化活性最高,光照50 min后对甲基橙的降解率为58%,分别是纯相BiVO_4和Bi_2MoO_6的2.3倍、2.8倍,样品重复稳定性好。通过活性基捕获实验,证明了甲基橙溶液降解过程中,羟基和空穴为主要活性物质。     

Cu_3V_2O_7(OH)_2·2H_2O纳米线的制备及其电化学性能

以CuSO4.5H2O和NH4VO3为原料,采用水热法制备了Cu3V2O7(OH)2.2H2O纳米线。利用XRD、FE-SEM、TEM和HRTEM对样品的结构和表面形貌进行了表征,并对其作为锂电池正极材料的电化学行为进行了研究。电化学性能测试表明,Cu3V2O7(OH)2.2H2O纳米线电极具有较高的开路电压和较大的放电容量。     

Preparation and visible-light photocatalytic activity of In2S3/TiO2 composite

A novel In₂S₃/TiO₂ composite with visible-light photocatalytic activity was prepared by a chemical precipitation method and characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope and UV–vis diffuse reflectance spectroscopy. Under both UV- and visible-light irradiation, the In₂S₃/TiO₂ composite shows good photocatalytic activity to degrade methyl orange, ascribed to the absorption of visible light by In₂S₃ sensitizer and enhanced separation of photoinduced electron–hole pairs in the composite semiconductors.     

MoS2/Sb2S3复合光催化剂的制备及其可见光催化性能

通过一步水热法制备出MoS₂/Sb₂S₃可见光复合催化剂,采用XRD、SEM、紫外可见漫反射（UV-Vis DRS）和XPS表征手段对MoS₂/Sb₂S₃复合光催化剂进行了表征,以罗丹明B（RhB）作为目标污染物进行降解实验。与纯Sb₂S₃和MoS₂相比,MoS₂/Sb₂S₃复合光催化剂对RhB的光催化降解具有更高的效率,表现出优异的吸附性能和光催化性能。同时在相同的实验条件下,与TiO₂、Bi₂S₃、C₃N₄、Sb₂S₃等催化剂相比,MoS₂/Sb₂S₃复合光催化剂表现出更为优异的光催化性能。此外,探究了MoS₂/Sb₂S₃复合光催化剂光催化降解机制,阐述了光催化反应机制,提供了一种适用于降解较高浓度有机废水的光催化剂制备方法,具有一定的应用价值。      

Synthesis and characterization of novel nanostructured fishbone-like Cu(OH)2 and CuO from Cu4SO4(OH)6

The Cu₄SO₄(OH)₆ was synthesized by a simple hydrothermal reaction with a yield of ~ 90%. Using Cu₄SO₄(OH)₆ as the starting material, novel fishbone-like Cu(OH)₂ was produced by a direct reaction of Cu₄SO₄(OH)₆ with NaOH solution. The Cu(OH)₂ consists of many needle-like nanorods parallel to each other and perpendicular to the direction of backbone, forming fishbone-like structure. Using the fishbone-like Cu(OH)₂ as the sacrificial precursor, CuO with similar size and morphology was obtained through a simple heat treatment. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray, X-ray photoelectron spectroscopy, BET nitrogen adsorption, and UV-Vis absorption spectroscopy were employed to characterize the as-prepared samples. The conversion of the Cu₄SO₄(OH)₆ to the fishbone-like Cu(OH)₂ was visualized by time-dependent SEM images. A mechanism was also proposed based on the observed results.     

Solvothermal synthesis of In(OH)3 nanorods and their conversion to In2O3

In this work, we demonstrate that monodisperse indium hydroxide (In(OH)₃) nanorods constructed with parallel wire-like subunits have been fabricated via a acrylamide-assisted synthesis route without any template. NH₃ from the hydrolysis of acrylamide acts as the OH⁻ provider. The structure and morphology of as-prepared products have been characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and thermogravimetric analysis (TG). A detailed mechanism has been proposed on the basis of time-dependent experimental results. Furthermore, by annealing In(OH)₃ precursors at 500 °C for 3 h in air, In₂O₃ samples were obtained with the designed morphology.     

Influence of sodium compounds at the Cu(In,Ga)Se2/(PVD)In2S3 interface on solar cell properties

The present contribution deals with indium sulfide buffer layers grown by thermal co-evaporation of elemental indium and sulfur. It has been found necessary to deposit these buffer layers at low substrate temperatures in order to reach V_oc values similar to those with (CBD)CdS. However, such deposition conditions lead to the formation of a highly recombinative Cu(In,Ga)Se₂/indium sulfide interface. This behaviour may be associated to the presence of sodium carbonates/oxides at the interface even though the Cu(In,Ga)Se₂ surface was cleaned in NH₃ (1 M, room temperature) prior to the indium sulfide deposition. An explanation is that, despite the chemical etch, sodium carbonates/oxides remain in the air exposed Cu(In,Ga)Se₂ grain boundaries and can migrate towards the surface when the Cu(In,Ga)Se₂ is heated under vacuum. These polluted interface areas act as recombination zones and thus inferior devices. A possibility to improve the device performance (i.e. improve the interface quality) is to sulfurize the remaining sodium carbonates/oxides. The resulting Na₂S can then leave the interface by formation of a solid solution with the indium sulfide. By adapting the buffer layer deposition process, 13.3% efficiency devices with co-evaporated indium sulfide are realized, performance which is close to that reached with (CBD)CdS.     

Influence of absorber copper concentration on the Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS based solar cells performance

The present contribution deals with the influence of the copper concentration in Cu(In,Ga)Se₂ (CIGSe) on the solar cells based on CIGSe/(PVD)In₂S₃ and CIGSe/(CBD)CdS. We find that, depending on the buffer layer, the optimum open circuit voltage (Voc) is not reached for the same copper concentration. The values of Voc for the CIGSe/(CBD)CdS solar cells are higher when the copper content is very close to stoichiometry (25%), whereas, the Voc values for CIGSe/(PVD)In₂S₃ solar cells attain their maximum for lower copper contents. On the other hand, contrary to the case of the (CBD)CdS buffer, the Jsc is strongly hindered for the (PVD)In₂S₃ buffered cells when the copper content is lowered. The study has been made for different absorber gallium contents and the evolution is coherent with the presence of a cliff at the CIGSe/(PVD)In₂S₃ interface.     

Preparation and characterization of Mg(OH)2 nanoparticles and flame-retardant property of its nanocomposites with EVA

The magnesium hydroxide [Mg(OH)₂] nanocrystallines with needle- or lamella-like morphologies were synthesized by a surfactant-mediated solution method. The structures and morphologies of Mg(OH)₂ nanoparticles were characterized by X-ray diffraction, transmission electron microscope, and Fourier transform infrared. Mg(OH)₂/ethylene-vinyl acetate copolymer (EVA) (1:1) nanocomposite was also prepared, and has a value of the limiting oxygen index of 38.3. The high-resolution transmission electron microscope picture shows that the Mg(OH)₂ nanoparticles disperse homogeneously in EVA matrix and the scanning electron microscope images indicate that the char formed after combustion of the nanocomposite appears very compact.     

纳米针状In(OH)3中残留氯元素的存在状态研究

采用高分辨透射电子显微术(HRTEM)分析纳米针状In(OH)3粉末中氯元素的存在状态.分析结果显示,氯元素主要以In5Cl9的形式存在,并且未探测到其他种类的InxCly化合物.In5Cl9中最容易观察到的晶面为(110)面(d=0.617 nm)和(113)面(d=0.428 nm).     

Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

Co-evaporated Cu(In,Ga)Se₂ (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In₂S₃) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the PVD-In₂S₃ buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In₂S₃/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.     

Mg(OH)2对苯并噁嗪环氧树脂复合材料阻燃性的影响

以Mg(OH)₂为无机阻燃剂,以苯并噁嗪(BZ)-环氧树脂(EP)为基体,通过热压成型制得Mg(OH)₂-玻纤布/BZ-EP层压板。通过垂直燃烧和极限氧指数测试层压板的阻燃性,分析了Mg(OH)₂粉体的用量、粒径及不同粒径粉体复合添加对复合材料阻燃性的影响,通过SEM对 Mg(OH)₂粉体在浸渍胶中的分散结构进行表征。研究发现: Mg(OH)₂粉体的粒径和用量对板材阻燃性有一定影响,不同粒径的粉体混合添加可以在复合材料中形成阻燃网络,达到最佳的阻燃效果,同时可以减小无机粒子对板材力学和电学性能的影响。当阻燃剂Mg(OH)₂用量为BZ-EP总质量的30wt%,粒径为2 μm的粉体(YX-105)和粒径为4 μm(YX-110)的粉体以质量比1:2复合添加时,所制层压板的极限氧指数为34%,垂直燃烧单个试样自熄时间最短为7.52 s,5个试样总自熄时间为49.81 s,达到UL-94V-0级标准。复合材料的弯曲强度为399.84 MPa,相对介电常数为3.848。