表面修饰TiO2光催化薄膜的表征

利用射频磁控溅射技术，以Ar和O2气混合气体为溅射气体在载玻片上制备了锐钛相TiO2薄膜。为了提高Ti02薄膜的光催化活性，在TiO2薄膜表面进行了钽修饰。利用X射线衍射(XRD)，原子力显微镜(AFM)和UV-VIS-NIR分光光度计等技术对薄膜进行了表征。结果表明：对TiO2薄膜的表面进行适量的Ta元素修饰可以提高其光催化活性。     

O2/(O2+Ar)比对磁控溅射La-Sr-Mn-O薄膜沉积速率的影响

采用直流磁控溅射技术,在不同的O2/(O2 Ar)体积比条件下于Si(100)基片上沉积La-Sr-Mn-O薄膜,结合扫描电子显微分析研究了O2/(O2 Ar)比对薄膜沉积速率的影响.结果表明:薄膜厚度均匀,O2/(O2 Ar)比是影响薄膜沉积速率的重要因素.基体温度和溅射气压较高时,薄膜沉积速率随O2/(O2 Ar)比增加呈抛物线规律下降,O2/(O2 Ar)比由4.4%增加到45.6%,沉积速率减小量可达52.8%;基体温度和溅射气压较低时,薄膜沉积速率随O2/(O2 Ar)比增大呈指数规律下降.薄膜沉积速率下降是由于被溅射原子/离子与氧原子/离子的碰撞几率随氧气含量增加而增大,从而降低了被溅射粒子的能量,使到达基片的粒子数减少.     

利用FCVA法和CO2、N2制备Ti(C,O,N)纳米复合薄膜的研究

使用CO2和N2利用磁过滤阴极弧法（FCVA）在Si（100）和304不锈钢上沉积Ti(C,N,O)薄膜。采用XPS, XRD, Raman, SEM, 摩擦磨损试验机,电化学实验站检测得出气体流速对薄膜成分、相结构和薄膜性能的作用。当混合气体流量从10sccm升高的50sccm时,薄膜中的C和N含量有明显增加,而O和Ti含量有小幅下降;当混合气体流量从50sccm升高到80sccm时,薄膜中的C和N含量下降,而Ti含量有小幅上升,O含量急剧上升。薄膜由nc-Ti(C,N,O)纳米晶结构,转变为nc-Ti(C,N,O)/a-CNx,a-TiO2/a-CNx,N-doped a-TiO2/a-C纳米复合结构。N-doped a-TiO2/a-C纳米复合结构薄膜具有最低的摩擦系数（0.34）,nc-Ti(C,N,O)/a-CNx,N-doped a-TiO2/a-C纳米复合结构薄膜在Hanks溶液中均表现出良好的抗腐蚀能力。     

氩气压力对中频磁控溅射制备AZO薄膜性能的影响

在普通玻璃衬底上利用掺杂2%(质量)Al2O3的ZnO陶瓷靶材在中频磁控溅射设备中制备了掺铝氧化锌(ZnO∶Al,AZO)薄膜.利用XRD、XPS、紫外可见分光光度计和Hall测试系统研究了Ar气压力(0.73～2.0 Pa)对AZO透明导电薄膜结构、光学和电学性能的影响.随着Ar气压力的增大,电阻率呈先减小后增大的趋...     

氨化硅基Ga2O3／Al2O3制备GaN薄膜性质研究

研究了Ga2O3／Al2O3膜反应自组装制备GaN薄膜。首先利用磁控溅射法在硅衬底上制备Ga2O3／Al2O3膜，再将Ga2O3／Al2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜。用傅里叶红外谱仪(FTIR)，X射线衍射(XRD)和扫描电镜(SEM)对试样进行结构、组分和形貌分析。通过分析薄膜各方面的性质，得出了用此方法制备氮化镓薄膜的Al2O3缓冲层最佳的厚度为15nm左右，最佳氨化条件是在900℃下氨化15min。     

氮气流量对反应磁控溅射TiN薄膜微结构与力学性能的影响

利用磁控溅射镀膜技术分别在硬质合金YG6X和单晶Si片表面制备TiN薄膜,分析N2流量对薄膜相组成、表面形貌、显微硬度和膜基结合力的影响。结果表明,N2流量对薄膜的微结构以及力学性能具有重要影响。随着N2流量的降低,TiN薄膜表面孔洞和台阶明显减少,表面平整度得到明显改善;薄膜的物相组成在N2流量为0.2sccm时为TiN和TiN0.61两相;N2流量的变化改变了薄膜表面的能量状态,因此,降低N2流量导致TiN薄膜的生长取向由(200)面向(111)面转变。同时,N2流量为2.4 sccm时TiN薄膜的膜基结合力最高,此时TiN薄膜也具有最高的显微硬度。     

超纳米金刚石薄膜的显微力学性能表征（英文）

研究4种不同气氛下制备的可应用于MEMS方面的超纳米金刚石薄膜的显微力学特征。利用纳米压痕技术得到样品的加载-卸载曲线及硬度和弹性模量随压入深度的变化关系。结果表明,无Ar条件下制备的薄膜具有最好的弹性回复能力、最高的硬度(72.9 GPa)和弹性模量(693.7 GPa)。同时低Ar含量更有利于提高薄膜的硬度和弹性模量。以上结果说明无Ar或低Ar含量更有利于提高纳米金刚石薄膜的力学性能,以更好地应用于MEMS方面。     

氧流量对铟锡氧化物薄膜光电性能的影响

采用射频磁控溅射法，在不同氧流量（0～10sccm）的条件下沉积了铟锡氧化物（In2O3-SnO2）透明导电薄膜。紫外分光光度计测试薄膜的透射率，四点探针测试薄膜的方阻，椭偏仪测试薄膜的复折射率和薄膜厚度，XPS测试ITO薄膜的成分和电子结构。结果表明：薄膜的沉积速率和折射率与氧流量有关，薄膜厚度为60nm，氧流量在9sccm时，透射率超过80％（波长λ=400nm～700nm，包括玻璃基体），退火后透射率、方阻明显改善。XPS分析表明，薄膜中的亚氧化物的存在降低了薄膜的光电性能，控制氧流量可减少亚氧化物。     

能量过滤磁控溅射技术制备Cu2O/TiO2复合薄膜及其光催化性能

目的制备具备良好光催化性能的Cu_2O/Ti O_2叠层复合薄膜。方法利用直流磁控溅射技术(DMS)和能量过滤直流磁控溅射技术(EFMS)在玻璃基底上制备Cu_2O/Ti O_2叠层复合薄膜,利用扫描电镜(SEM)、X射线衍射(XRD)、椭偏仪和光催化测试系统表征和分析了薄膜的表面形貌、结构、透射率和光催化性能。结果 DMS技术和EFMS技术制备的Ti O_2和Cu_2O薄膜都有良好的结晶特性,其中Ti O_2为单一的锐钛矿结构。相对于DMS技术制备的Cu_2O薄膜,EFMS样品中的Cu_2O薄膜的衍射峰较弱,而且衍射峰的宽度变宽,衍射曲线比较平滑。薄膜表面较平整,颗粒均匀,较细小,边界明显。DMS和EFMS两种技术制备的薄膜的平均晶粒直径分别为15.4 nm和10.8 nm。透射光谱测试结果表明,EFMS技术制备的复合薄膜平均透射率较大,在350～800 nm范围内,平均透射率为0.388,DMS薄膜的值为0.343。对罗丹明B(Rh B)的光催化降解结果表明,EFMS技术制备的薄膜的降解速率为-0.00411,大于DMS技术制备的薄膜的降解速率-0.00334。结论 EFMS技术制备的Cu_2O/Ti O_2叠层复合薄膜对罗丹明B具有较大的光催化降解速率。     

反应气体对纳米金刚石薄膜的显微力学特性影响

本文采用电子辅助增强热丝化学气相沉积(HFCVD)系统,CH4/H2、CH4/H2/Ar气体和不同比例的四种气氛制备了纳米金刚石薄膜,利用Raman光谱和原子力显微镜(AFM)表征了薄膜的结构和显微形貌,采用纳米压入测试技术测量了纳米金刚石薄膜的显微力学特性,获得了加载、卸载曲线,以及硬度和模量随压入深度的变化曲线。结果表明:薄膜具有明显的纳米结构特点,随着CH4、Ar浓度的增加,晶粒更加细化,表面粗糙度更低。无Ar气氛制备的纳米金刚石薄膜的弹性恢复较好,硬度和模量较高,CH4和Ar含量越低的制备气氛,其硬度和模量相对较高。     

直流溅射沉积CrN薄膜组织结构与摩擦性能分析研究

采用直流反应溅射在304不锈钢表面沉积CrN薄膜。利用X射线衍射仪（XRD）,扫描电子显微镜（SEM）,原子力显微镜（AFM）,显微硬度计,磨损试验机与三维轮廓仪等表征氮气流量对CrN薄膜组织结构与摩擦性能的影响。研究结果表明,随着氮气流量的增加,CrN (200)晶面呈择优取向,薄膜的沉积速率随着氮气流量的增加逐渐降低。另外,薄膜的表面粗糙度随着氮气流量的增加呈先降低后增加的趋势。随着氮气流量从15 sccm增加至30 sccm时,薄膜的显微硬度先从527.34 HV增加至1042.26 HV,当氮气流量再增加至35 sccm时,薄膜的显微硬度却降低至918 HV。磨损试验表明,当氮气流量为30 sccm 时薄膜具有最小的摩擦系数0.93和磨损率2.02×10-15m3·(N·m)-1,显示最佳的磨损性能。     

Investigation of novel low temperature atmospheric pressure plasma system for deposition photo-catalytic TiO2 thin film

The purpose of this study was to develop a novel low-temperature atmospheric pressure (AP) plasma system and to use the system to deposit photo-catalytic titanium dioxide (TiO₂) thin film. In this study, titanium tetraisopropoxide (TTIP) was used as a precursor for TiO₂ thin film deposition. The precursor was vaporized by ultrasonic oscillator and introduced into an atmospheric plasma system by argon (Ar) carrier gas. The main plasma working gas was Ar mixed with O₂. Microstructure evolutions of TiO₂ thin film were investigated by low-angle grazing-incidence x-ray diffraction (GID), x-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), and transmission electron microscope (TEM). The photo-catalytic properties were determined by contact angle and methylene orange de-coloration testing. In this study, the substrate temperature, the precursor flow rate and the O₂ flow rate were varied. TiO₂ thin film grown at a temperature of 350 °C, with precursor and O₂ flow rates of 20 sccm and 200 sccm, respectively, revealed the optimum photo-catalytic properties. It was also found that titanium dioxide thin films synthesized by the AP plasma method possess reasonable photo-catalytic characteristics like other deposition techniques.     

Study of Electrical,Mechanical, and Tribological Properties of CrN x Thin Films as a Function of Sputtering Conditions

The influences of chemical composition and deposition power on the electrical, mechanical, and tribological properties of sputtered chromium nitride (Cr-N) thin films that can be used for development of cryogenic temperature sensor are investigated. Cr-N thin films were deposited by DC reactive magnetron sputtering technique under various nitrogen gas flows (5-20 sccm) and deposition powers (200 and 250 W). Results of chemical composition showed that films produced with 5 and 10 sccm flow of nitrogen gas were substoichiometric, while at higher flows they were overstoichiometric. The surface morphology investigation showed that grains size and surface roughness increase with nitrogen gas flow, whereas deposition power has an inverse effect on both of these parameters. The electrical results demonstrated that the substoichiometric films had a positive temperature coefficient of resistivity, and the overstoichiometric films showed a negative temperature coefficient of resistivity. The films produced at higher deposition power of 250 W showed higher hardness and lower friction coefficient and scratch volume, while variation of nitrogen gas flow in the range of 5-20 sccm did not affect these properties, significantly.     

非平衡磁控溅射沉积Ti-N薄膜色彩和性能调控研究

目的研究Ti-N薄膜颜色和硬度及其结合强度的影响因素。方法利用封闭磁场非平衡磁控溅射离子镀膜技术,该变溅射偏压、氮气流量等参数,分别在304不锈钢基体和载玻片基体上沉积多彩Ti-N薄膜。用努氏硬度、划痕法和球坑法分别评价Ti-N薄膜的显微硬度和结合强度等性能。结果当偏压和溅射电流分别为-60 V和2 A时,将反应气体氮气流量从3sccm逐渐增加到20sccm,Ti-N薄膜颜色依次发生从"淡黄-金黄-红黄-紫红-金黄"的循环变化趋势。薄膜的硬度随氮气流量的增加在601~700HK之间呈逐步上升的趋势。膜基结合普遍较好。当氮气流量和溅射电流分别为10sccm和2 A时,将负偏压从-50 V逐渐增加到-120 V,薄膜颜色从淡黄色变成金黄色,膜基结合强度较好。硬度随偏压的增加变化不明显。结论影响Ti-N薄膜颜色的主要因素为氮气流量,偏压也可以轻微地改变薄膜颜色,但对薄膜性能影响并不明显。     

Effect of N2 flow on low carbon TiAlNC coatings

TiAlNC coatings were prepared under various N₂ flows by reactive dc magnetron sputtering. The composition, microstructure and hardness of TiAlNC coatings were investigated by energy dispersive spectroscopy, X-ray diffraction, scanning electron microscopy and micro Vicker tester. By increasing the N₂ flow, the Al/Ti ratio and the nitrogen content of the coatings increased. It was found that hexagonal AlN phase precipitated under relatively high N₂ flow (e.g. 8 sccm). The increase in the N₂ flow also changed the preferred orientation of fcc Ti(Al)N(C) phase from random to [111], and then to [200]. The coating deposited at low N₂ flow (e.g. 2 sccm) exhibited [111] preferred orientation with porous structure and relatively low hardness. However, when the N₂ flow was relatively high (e.g. 8 sccm), the hcp AlN phase precipitation and N₂-induced grain refinement resulted in a denser multiphase structure, which improved the hardness and toughness of the TiAlNC coating.     

Effects of oxygen partial pressure on doping properties of Ga-doped ZnO films prepared by ion-plating with traveling substrate

Polycrystalline Ga-doped ZnO (GZO) thin films were prepared by ion-plating on a traveling glass substrate at 200 °C. Effects of O₂ gas flow rate and Ga₂O₃ content in source on the electrical and structural properties of GZO films were investigated. GZO films having a low resistivity of 210^− 4 Ω cm order were obtained under the conditions of Ga₂O₃ contents of 3-5 wt.% and O₂ gas flow rates below 10 sccm. In particular, for GZO films prepared with a Ga₂O₃ content of 4 wt.% at an O₂ gas flow rate of 2.5 sccm, the lowest resistivity of 2.23 × 10^− 4 Ω cm was obtained; the carrier concentration and Hall mobility were 1.17 × 10²¹ cm^− 3 and 23.9 cm²/Vs, respectively. Excess Ga₂O₃ content in source (> 6 wt.%) cause deterioration both in crystallinity and in electric property most probably due to the solubility limit for Ga doping in ZnO at the glass substrate temperature of 200 °C. Excess O₂ gas flow rates (> 10 sccm) during the film growth also lower the electric properties of the GZO films.     

Effect of hydrogen flow on the properties of hydrogenated amorphous carbon films fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition

The hydrogenated amorphous carbon films (a-C:H, so-called diamond-like carbon, DLC) have exceptional physical and mechanical properties and have wide applications. In the present study, amorphous hydrogenated carbon films (a-C:H) have been deposited on a Si (100) substrate at different hydrogen flow using electron cyclotron resonance chemical vapor deposition (ECR-CVD). The flow of hydrogen changed from 10 sccm to 40 sccm and the flow of acetylene was fixed at 10 sccm. The microstructure and properties of the a-C:H were measured using visible Raman spectra, Fourier transform infrared (FTIR) spectroscopy, UV-VIS spectrometer,surface profilometer and nano-indentation. The results showed that the sp³ content and sp³-CH₂ structure in the amorphous hydrogenated carbon films increased with the hydrogen flow. The deposition rate decreased with the hydrogen flow. The residual stress and the nano-hardness of the amorphous hydrogenated carbon films increased with the hydrogen flow. Consequently, the a-C:H film become more diamond-like with the increase of hydrogen flow.     

约束式热丝CVD法制备金刚石的研究

为提高热丝CVD法沉积金刚石薄膜的生长速率,以丙酮和氢气作为反应气源,利用自制的半封闭式空间约束装置,将热丝、衬底、反应气体聚集在狭小空间内,研究不同气体流速条件下的金刚石薄膜沉积情况;使用SEM和Raman光谱表征所合成的薄膜。结果表明:采用约束式沉积法可以显著提高沉积速率,本实验在230 cm3/min（标况）气体流速下获得最大沉积速率6.31 μm/h,比未约束时增大了近一倍。随着气体流速增大,沉积速率先增大后减小;气体流速86~115 cm3/min（标况）时,晶粒尺寸为微米级;气体流速115~575 cm3/min（标况）时,晶粒尺寸减小至纳米级。Raman光谱检测显示:约束式沉积所得薄膜总体质量较好,但随气体流速增大而逐渐降低。      

高功率脉冲磁控溅射技术制备纳米级ZrO2薄膜的高耐腐蚀性

高质量的金属氧化物薄膜在航天航空、海洋船舶等极端环境下的关键部件有着广泛的应用需求,但传统制备技术易导致薄膜疏松多孔,产生空隙裂纹等缺陷,高功率脉冲磁控溅射技术(HiPIMS)已被证明是一种有效制备无空洞和无弧滴致密薄膜的有效方法。通过 HiPIMS 技术在不锈钢表面制备超薄致密 ZrO₂ 薄膜,重点研究不同 O₂流量下耐腐蚀性能的调控规律。 通过扫描电子显微镜(SEM)、光电子能谱仪(XPS)、X 射线衍射仪(XRD)、原子力显微镜(AFM)、纳米压痕仪(Nano Test P3)、电化学设备(CS300)等对 ZrO₂薄膜的表面形貌、物相结构、力学性能、耐腐蚀性能等方面进行研究。研究结果显示, 在 O₂流量为 40 mL/ min 时,ZrO₂ 薄膜的纳米硬度 H 最高为 26.38 GPa,弹性模量 E 为 290.9 GPa;同时,在电化学腐蚀试验中,其自腐蚀电流密度 I_corr达到 45.802 pA / cm² ,与 304L 不锈钢相比降低了 4 个数量级;电化学阻抗谱(EIS)显示,随 O₂流量的增加,容抗弧半径、低频区阻抗值和相角均随之不断增大,进一步表明 O₂ 流量为 40 min / mL 制备薄膜的耐腐蚀性能最优。通过 HiPIMS 技术能够制备出高质量的 ZrO₂ 薄膜,其高耐腐蚀性对基体起到了强效的防护作用,对防腐薄膜的研究和应用具有一定参考价值。