A Paradigm Shift from 2D to 3D: Surface Supramolecular Assemblies and Their Electronic Properties Explored by Scanning Tunneling Microscopy and Spectroscopy (Small 24/2023)

Exploring supramolecular architectures at surfaces plays an increasingly important role in contemporary science, especially for molecular electronics. A paradigm of research interest in this context is shifting from 2D to 3D that is expanding from monolayer, bilayers, to multilayers. Taking advantage of its high-resolution insight into monolayers and a few layers, scanning tunneling microscopy/spectroscopy (STM/STS) turns out a powerful tool for analyzing such thin films on a solid surface. This review summarizes the representative efforts of STM/STS studies of layered supramolecular assemblies and their unique electronic properties, especially at the liquid–solid interface. The superiority of the 3D molecular networks at surfaces is elucidated and an outlook on the challenges that still lie ahead is provided. This review not only highlights the profound progress in 3D supramolecular assemblies but also provides researchers with unusual concepts to design surface supramolecular structures with increasing complexity and desired functionality.     

Growth of stoichiometric TiO2 thin films on Au(100) substrates by molecular beam epitaxy

The present study reports on the growth of thin TiO₂ films onto Au(100) single crystals by Ti evaporation in a reactive O₂ atmosphere at two different substrate temperatures: room temperature (RT) and 300 °C. The growth of the oxide films was monitored by means of X-ray photoemission spectroscopy, while the valence and conduction band electronic structure was investigated by UV and inverse photoemission spectroscopy, respectively.The TiO₂ film grows epitaxially on the Au(100) substrate at 300 °C exhibiting the rutile (100) surface. The evolution of the Ti 2p lineshape with the oxide coverage shows the presence of reduced oxide species (characterized by Ti^3 + ions) at the Au(100) interface. A crystalline and stoichiometric TiO₂ oxide is produced at high substrate temperature, while growth at RT gives a measurable concentration of defects. Post growth annealing in ultra-high vacuum of the RT grown film increases this concentration, while subsequent annealing in O₂ atmosphere restores the sample to the as-grown conditions.