The effect of a constant electric field on the domain structure of ferroelectric PbSc0.5Nb0.5O3 crystals

The effect of a constant electric field on the domain structure formation in ferroelectric lead scandium niobate (PbSc_0.5Nb₀₅O₃) crystals was studied by a polarization-optical method. It is shown that the crystals contain 71° and 180° domains with the boundaries representing (100) and (110) crystal planes.     

Microstructure and microwave dielectric characteristics of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics

(1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi₄O₉ with 1150 °C-calcined Ba(Zn_1/3Ta_2/3)O₃ powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics have been investigated. X-ray diffraction patterns reveal that BaTi₄O₉, ordered and disordered Ba(Zn_1/3Ta_2/3)O₃ phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn_1/3Ta_2/3)O₃ ceramics. The dielectric constants (?_r) and the temperature coefficient of resonant frequency (τ_f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of BaTi₄O₉ content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of Ba(Zn_1/3Ta_2/3)O₃ content. The results are attributed to the higher density and quality value of Ba(Zn_1/3Ta_2/3)O₃ ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi₄O₉ content. The (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramic with x = 0.1 sintered at 1320 °C exhibits a ?_r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τ_f value of 4.1 ppm/°C.     

Sintering and piezoelectric properties of Pb(Ni1/3Sb2/3)O3-PbZrO3-PbTiO3 ceramics

The sintering and piezoelectric properties of Pb(Ni_1/3Sb_2/3)O₃-PbZrO₃-PbTiO₃ ceramics have been investigated. When the powders contain 48 mol% PbTiO₃ and less than 10 mol% Pb(Ni_1/3Sb_2/3)O₃ followed by calcination at 850°C for 2 h, the calcine only contains the perovskite structure; but if the Pb(Ni_1/3Sb_2/3)O₃ content is between 12 mol% and 14 mol%, both tetragonal and rhombohedral phases are obtained. The composition of the morphotropic phase boundary(MPB) in the Pb(Ni_1/3Sb_2/3)O₃-PbZrO₃-PbTiO₃ system is Pb(Ni_1/3Sb_2/3)O₃ = 12 mol%, PbZrO₃ = 40 mol% and PbTiO₃ = 48 mol%. As the composition at the MPB is sintered at 1260°C and 1280°C for 2 h, respectively, the maximum density (7.8 g/cm³) is obtained. The SEM micrographs indicate that a decrease in porosity with increasing sintering temperature is attained at 1280°C, which is due to a decrease in the number and size of pores. When the sintering temperature is higher than 1280°C, the porosity increases due to PbO evaporation leading to an increase of the number of pore sites and in enlargement of the pore diameter. When the compact composition at MPB is sintered at 1280°C for 2 h, the planar coupling coefficient (K _p) and mechanical quality coefficient (Q _m) tend to approach the maximum (0.488) and minimum values (292.5), respectively.     

Effect of Sb5+ substitution on the dielectric properties of Ag(Nb0.8Ta0.2)O3 ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The dielectric properties of Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics were found to be improved by the substitution of Sb for Nb/Ta. The ε value of Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics sintered at 1060 °C increased from 430 to 825 with x increasing from 0 to 0.08, the tanδ value decreased sharply from 0.0085 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept to a lower tanδ value ∼ 0.0024 with x to 0.08. The TCC values decreased from + 1450 ppm/°C for x = 0 to − 38.5 ppm/°C for x = 0.08. The Ag(Nb_0.8Ta_0.2)_1−xSb_xO₃ ceramics with x = 0.08 sintered at 1050 °C exhibited the optimum dielectric properties of ε ∼ 854, tanδ ∼ 0.0024 (1 MHz), and TCC ∼ 36.86 ppm/°C.     

Perovskite phase stabilization and dielectric properties of Pb(Zn1/3Ta2/3)O3–BaTiO3 ceramics

The phase structure and dielectric properties of (1 − x)Pb(Zn_1/3Ta_2/3)O₃–xBaTiO₃ (x = 0.00–0.40) ceramics were investigated. Pure perovskite is obtained when x ≥ 0.24. With increasing BT content, the diffuse phase transition and frequency dissipation of the dielectric constant increase and the dielectric maxima temperature decreases. It is related to the existing of Ba(Zn_1/3Ta_2/3)O₃ paraelectric microregions and the incomplete solid solution reaction between Pb(Zn_1/3Ta_2/3)O₃ and BaTiO₃.     

Effect of La/Sn co-substitution for Ba/Ta on crystal structure and dielectric properties of Ba5NdTi3Ta7O30 ceramics

The effects of La/Sn co-substitution for Ba/Ta were investigated for the modification of Ba₅NdTi₃Ta₇O₃₀ ceramics. The modified ceramics (Ba_5–x La _x )NdTi₃(Ta_7–x Sn _x )O₃₀ exhibited single tetragonal tungsten bronze phase for x<1.5, while a small amount of secondary phase BaTi₄O₉ was observed for x>1.5. The lattice constants decreased with increasing La/Sn content, while the axial ratio 10^1/2c/a decreased when x was below 1.5, then slightly increased. With increasing La and Sn content, the temperature coefficient of dielectric constant (at 1 MHz) was remarkably lowered from –1560 ppm/ °C to –286 ppm/ °C, while the dielectric constant gradually reduced, and the dielectric loss slightly increased. There were some clear relationships between the temperature coefficient and bond valence, tolerance factor: the temperature coefficient of dielectric constant linearly increased when the bond valence of the ions at B sites increased, while the same effect occurred when the tolerance factor decreased. In addition, the stability of the tetragonal tungsten bronze phase is discussed in relation to electronic difference and tolerance factor.     

Properties of B-site non-stoichiometric (K0.5Na0.5)(Nb0.9Ta0.1)1+x O3 lead-free piezoelectric ceramics

The non-stoichiometric (K_0.5Na_0.5)(Nb_0.9Ta_0.1)_1+x O₃ (x = 0, ±0.005, ±0.010) [KN(NT)_1+x ] lead-free piezoelectric ceramics were prepared by normal sintering. The samples were characterized by X-ray diffraction and scanning electron microscopy. All the KN(NT)_1+x ceramics possess orthorhombic perovskite structure. The grain growth of the ceramics is inhibited and the relative density is improved with increasing x. 0.5 mol% (NT)⁵⁺ excess KN(NT)_1+x ceramic which sintered at 1,120 °C has the highest piezoelectric performances among with other samples. Meanwhile, the (NT)⁵⁺ excess ceramics have better time stability than the (NT)⁵⁺ deficient ones. These results show that the KN(NT)_1+x ceramic with x = 0.005 is a promising lead-free piezoelectric material.     

Sinterability improvement of Ba(Mg1/3Ta2/3)O3 dielectric ceramics

The sinterability of Ba(Mg_1/3Ta_2/3)O₃ ceramics synthesized by solid-state-reaction methods was investigated. The poor sinterability of the present ceramics was found to be primarily due to the presence of satellite secondary phases of Ba₅Ta₄O₁₅ and Ba₄Ta₂O₉, and the nearly complete densification of Ba(Mg_1/3Ta_2/3)O₃ ceramics was accomplished successfully by controlling the phase constitution of the calcined powders. For this purpose, enhanced ball-milling processes were found to be extremely effective. Moreover, excellent microwave dielectric characteristics (_r = 24.5–24.7, Q = 26 000 at 9.8 GHz, and _f = 1.7 p.p.m. C^–1) were attained in the dense Ba(Mg_1/3Ta_2/3)O₃ ceramics without additives.     

Influence of sintering temperature on piezoelectric properties of (K0.5Na0.5)NbO3-LiNbO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ have been synthesized by traditional ceramics process without cold-isostatic pressing. The effect of the content of LiNbO₃ and the sintering temperature on the phase structure, the microstructure and piezoelectric properties of (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ ceramics were investigated. The result shows that the phase structure transforms from the orthorhombic phase to tetragonal phase with the increase of the content of LiNbO₃, and the orthorhombic and tetragonal phase co-exist in (K_0.5Na_0.5)NbO₃-LiNbO₃ ceramics when the content of LiNbO₃ is about 0.06 mol. The sintering temperature of (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ decreases with the increase of the content of LiNbO₃. The optimum composition for (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ ceramics is 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃. The optimum sintering temperature of 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃ ceramics is 1080 °C. Piezoelectric properties of 0.94 (K_0.5Na_0.5)NbO₃-0.06LiNbO₃ ceramics under the optimum sintering temperature are piezoelectric constant d₃₃ of 215 pC/N, planar electromechanical coupling factor k_p of 0.41, thickness electromechanical coupling factor k_t of 0.48, the mechanical quality factor Q_m of 80, the dielectric constant of 530 and the Curie temperature T_c = 450 °C, respectively. The results indicate that 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃ piezoelectric ceramics is a promising candidate for lead-free piezoelectric ceramics.     

Effect of Nonstoichiometry on the Structure and Dielectric Properties of PbMg1/3Nb2/3O3–PbTiO3 Ceramics

(1 – x)PbMg_1/3Nb_2/3O₃–xPbTiO₃ ceramics with x = 0.20–0.36 were prepared and characterized by x-ray diffraction, microstructural analysis, and dielectric measurements at different temperatures and frequencies. The phase composition, structural parameters, and ferroelectric transition temperatures of the ceramics were determined. The unit-cell volume and transition temperature were shown to decrease with increasing Pb vacancy concentration.     

Microwave dielectric properties of mixed phase ceramics, Ba(Zn1/3Ta2/3)O3–xCaTiO3 and xMgTiO3–yCaTiO3–z(Nd2O3,wTiO2)

The effect of different chemical compositions on the microwave dielectric properties of Ba(Zn_1/3Ta_2/3)O₃–xCaTiO₃ and xMgTiO₃–yCaTiO₃–z(Nd₂O₃,wTiO₂) was studied. High fQ dielectrics were designed by optimizing composition and firing conditions. Adding up to 1 mol % CaTiO₃ to Ba(Zn_1/3Ta_2/3)O₃ increased ε_r from 25 to 30 at a firing temperature of 1450 °C, and produced very high fQ values of more than 100 000 GHz at a firing temperature of 1550 °C. EPMA and XRD suggested that ceramics based on Ba(Zn_1/3Ta_2/3)O₃ with CaTiO₃ had mixed phases of Ba(Zn_1/3Ta_2/3)O₃ and Ca–Ti–Zn–O. Addition of CaTiO₃ increased the Ba(Zn_1/3Ta_2/3)O₃ peak observed in XRD and decreased the Ba₃Ta₂O₈ peak. Prolonged sintering of Ba(Zn_1/3Ta_2/3)O₃ with CaTiO₃ increased the fQ value but kept ε_r constant. 0.5MgTiO₃–0.5CaTiO₃–z(Nd₂O₃,wTiO₂) showed a high dielectric constant ε_r>40 and fQ>20 000 GHz. When w=1, τ_f decreased linearly with z around 0 ppm/ °C in 0.5MgTiO₃–0.5CaTiO₃–z(Nd₂O₃,TiO₂) (0.25≤z≤0.5). X-ray and EDX analysis revealed a mixed phase matrix of MgTiO₃ and (Ca_1?αNd_2α/3)Ti_βO₃. It was concluded that ε_r of the high fQ materials Ba(Zn_1/3Ta_2/3)O₃–xCaTiO₃ and xMgTiO₃–yCaTiO₃–z(Nd₂O₃,wTiO₂) would be increased by varying their chemical compositions, x, y, z, and w, and that their fQ value would be improved by appropriate choices of heating temperature and time.     

Dielectric properties of B2O3-doped (1 − x)LaAlO3-xSrTiO3 ceramic system at microwave frequency

The effects of B₂O₃ addition on the microwave dielectric properties and the microstructures of (1−x)LaAlO₃-xSrTiO₃ ceramics prepared by conventional solid-state routes have been investigated. Doping with 0.25 wt.% B₂O₃ can effectively promote the densification and the microwave dielectric properties of (1−x)LaAlO₃-xSrTiO₃ ceramics. It is found that LaAlO₃-SrTiO₃ ceramics can be sintered at 1400°C due to the liquid phase effect of a B₂O₃ addition observed by scanning electronic microscopy (SEM). The dielectric constant as well as the Q×f value decreases with increasing B₂O₃ content. At 1460°C, 0.46LaAlO₃-0.54SrTiO₃ ceramics with 0.25 wt.% B₂O₃ addition possesses a dielectric constant (ε_r) of 35, a Q×f value of 38,000 (at 7 GHz) and a temperature coefficients of resonant frequency (τ_f) of −1 ppm/°C.     

Enhancing the microwave dielectric properties of Nd (Mg0.5Sn0.5)O3 ceramics by substituting Nd3+ with Ca2+

The microwave dielectric properties of Nd_(1?2x/3)Ca_x(Mg_0.5Sn_0.5)O₃ ceramics were examined to evaluate their exploitation for mobile communication. Nd_(1?2x/3)Ca_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Nd_2.9/3Ca_0.05(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with the sintering temperature. Nd_2.9/3Ca_0.05(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1,550 °C for 4 h had the following properties: a density of 6.86 g/cm³, a dielectric constant (ε_r) of 19.3, a quality factor (Q × f) of 99,000 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?65 ppm/°C.     

Tantalum influence on physical properties of (K0.5Na0.5)(Nb1−xTax)O3 ceramics

Lead-free (K_0.5Na_0.5)(Nb_1−xTa_x)O₃ ceramics with x = 0.00-0.30 were prepared by the solid-state reaction technique. The effects of Ta on microstructure, crystallographic structure, phase transition and piezoelectric properties have been investigated. It has been shown that the substitution of Ta decreases Curie temperature T_C and orthorhombic-tetragonal phase transition temperature T_O-T, while increasing the rhombohedral-orthorhombic phase transition temperature T_R-O. In addition, piezoelectric activity is enhanced with the increase of Ta content. The ceramics with x = 0.30 have the high value of piezoelectric coefficient d₃₃ = 205 pC/N. Moreover, k_p shows little temperature dependence between −75° C and 75 °C, and d₃₃ exhibits very good thermal stability over the range from −196 °C to 75 °C in the aging test.     

Microwave dielectric properties of Ba(Mg1/3Ta(2−2x)/3Wx/3Tix/3)O3 ceramics

The microwave dielectric properties of ceramics based on Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ is investigated as a function of x. The densification as well as dielectric properties deteriorate with increase in the substitution levels of (Ti_1/3W_1/3)^3.33+ at (Ta_2/3)^3.33+ site in Ba(Mg_1/3Ta_2/3)O₃. The τ_f is approaching zero between x = 0.1 and 0.15 in Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ where quality factor is reasonably good (Q_u × f = 80,000–90,000 GHz). The Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ with x = 1.0 has ɛ_r = 15.4, τ_f = −25.1 ppm/°C, Q_u × f = 35,400 GHz.     

Influence of V2O5 additions to Ba(Mg1/3Ta2/3)O3 ceramics on sintering behavior and microwave dielectric properties

The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg_1/3Ta_2/3)O₃ exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V₂O₅ (up to 0.5 wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg_1/3Ta_2/3)O₃ ceramics can be increased beyond 95% of its theoretical value by 1500 °C-sintering, which is caused by the liquid-phase effect of V₂O₅ addition. The detected second phase Ta₂O₅ was mainly the result of V⁵⁺ substitution in the ceramics. Dielectric constant (ε_r) and temperature coefficient of resonant frequency (τ_f) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V₂O₅ addition due to the increase in B-site ordering. The ε_r value of 24.1, Q×f value of 149,000 (at 10 GHz) and τ_f value of 7.2 ppm/°C were obtained for Ba(Mg_1/3Ta_2/3)O₃ ceramics with 0.25 wt.% V₂O₅ addition sintered at 1500 °C for 3 h.     

Effect of tantalum substitutions on microstructures and dielectric properties of calcium copper titanate (CaCu3Ti4O12) ceramic

Tantalum (Ta⁵⁺) doped CaCu₃Ti_4−xTa_xO₁₂ (x = 0.05 and 0.10) ceramics were prepared by semi-wet route using solid Ta₂O₅ powder and metal nitrate solutions. Powder X-ray diffraction confirmed the major phase formation of cubic CaCu₃Ti₄O₁₂ ceramic in the doped samples sintered at 900 °C for 6 h. Microstructure has been studied using field-emission scanning electron microscopy. The grain size is in the range of 150 nm to 1 μm for both compositions. Dielectric constant of the samples increases with increasing tantalum concentrations.     

Improved microwave dielectric properties of Nd(Mg0.5Sn0.5)O3 ceramics with Ni2+ substituting

This study elucidates the microwave dielectric properties and microstructures of Nd(Mg_0.5?xNi_xSn_0.5)O₃ ceramics with a view to their potential for microwave devices. The Nd(Mg_0.5?xNi_xSn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Nd(Mg_0.43Ni_0.07Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. A dielectric constant ( $ \varepsilon_{r} $ ) of 19.3 and a quality factor (Q × f) of 93,400 GHz and a temperature coefficient of resonant frequency ( $ \tau_{f} $ ) of ?66 ppm/ °C were obtained for Nd(Mg_0.43Ni_0.07Sn_0.5)O₃ ceramics that were sintered at 1,550 °C for 4 h.     

Enhancement microwave dielectric properties of La(Mg0.5Sn0.5)O3 ceramics by Substituting Mg for Co

The microwave dielectric properties of La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were examined with a view to exploiting them for mobile communication. The La(Mg_0.5−xCo_xSn_0.5)O₃ ceramics were prepared using the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics revealed that La(Mg_0.4Co_0.1Sn_0.5)O₃ is the main crystalline phase, which is accompanied by small extent of La₂Sn₂O₇ as the second phase. Formation of this Sn-rich second phase was attributed to the loss of MgO upon ignition. Increasing the sintering temperatures seemed to promote the formation of La₂Sn₂O₇. An apparent density of 6.67 g cm⁻³, a dielectric constant (?_r) of 20.3, a quality factor (Q.F.) of 70,500 GHz, and a temperature coefficient of resonant frequency (τ_f) of −77 ppm °C⁻¹ were obtained for La(Mg_0.4Co_0.1Sn_0.5)O₃ ceramics that were sintered at 1550 °C for 4 h.     

The crystal structures and dielectric properties of Bi2O3 doped SrBi2Ta2O9 ceramics

Ferroelectric materials with Bi-layered structure such as SrBi₂Ta₂O₉ composition with excess x wt.% Bi₂O₃ (x = 0, 2, and 4) are investigated as the main composition, the effect of excess Bi₂O₃ content and sintering temperatures on the crystal structure and dielectric characteristics of SrBi₂Ta₂O₉ ceramics are developed. Even 1280 °C is used as the sintering temperature of stoichiometry SrBi₂Ta₂O₉ composition, the X-ray diffraction patterns will show that the SrBi₂Ta₂O₉ phase is coexisted with the raw material of Ta₂O₅ and the secondary phases of SrBi₂O₄ and BiTaO₄. For SrBi₂Ta₂O₉ composition with excess 2 wt.%- or 4 wt.%-Bi₂O₃-doped and sintered at 1040 °C, the Ta₂O₅, SrBi₂O₄, and BiTaO₄ phases are eliminated and only the SrBi₂Ta₂O₉ phase is observed in the X-ray diffraction patterns. It is found that sintering temperatures and excess Bi₂O₃ content have large influence on the grain growth, the bulk densities, the maximum dielectric constants, and the Curie temperatures of SrBi₂Ta₂O₉-based ceramics.