Electromigration-Induced Failure of Ni/Cu Bilayer Bond Pads Joined with Sn(Cu) Solders

The effect of electromigration (EM) on Sn(Cu)/Ni/Cu solder joint interfaces under current stressing of 10⁴ A/cm² at 160°C was studied. In the pure Sn/Ni/Cu case, the interfacial compound layer was mainly the Cu₆Sn₅ compound phase, which suffered serious EM-induced dissolution, eventually resulting in serious Cu-pad consumption. In the Sn-0.7Cu case, a (Cu,Ni)₆Sn₅ interfacial compound layer formed at the joint interface, which showed a strong resistance to EM-induced dissolution. Thus, there was no serious consumption of the Cu pad under current stressing. In the Sn-3.0Cu case, we believe that the␣massive Cu₆Sn₅ phase in the solder matrix eased possible EM-induced dissolution at the interfacial compound layer due to current stressing.     

Effect of Cross-Interaction between Ni and Cu on Growth Kinetics of Intermetallic Compounds in Ni/Sn/Cu Diffusion Couples during Aging

The solid-state, cross-interaction between the Ni layer on the component side and the Cu pad on the printed circuit board (PCB) side in ball grid array (BGA) solder joints was investigated by employing Ni(15 μm)/Sn(65 μm)/Cu ternary diffusion couples. The ternary diffusion couples were prepared by sequentially electroplating Sn and Ni on a Cu foil and were aged isothermally at 150, 180, and 200°C. The growth of the intermetallic compound (IMC) layer on the Ni side was coupled with that on the Cu side by the mass flux across the Sn layer that was caused by the difference in the Ni content between the (Cu_1−x Ni _x )₆Sn₅ layer on the Ni side and the (Cu_1−y Ni _y )₆Sn₅ layer on the Cu side. As the consequence of the coupling, the growth rate of the (Cu_1−x Ni _x )₆ Sn₅ layer on the Ni side was rapidly accelerated by decreasing Sn layer thickness and increasing aging temperature. Owing to the cross-interaction with the top Ni layer, the growth rate of the (Cu_1−y Ni _y )₆Sn₅ layer on the Cu side was accelerated at 150°C and 180°C but was retarded at 200°C, while the growth rate of the Cu₃Sn layer was always retarded. The growth kinetic model proposed in an attempt to interpret the experimental results was able to reproduce qualitatively all of the important experimental observations pertaining to the growth of the IMC layers in the Ni/Sn/Cu diffusion couple.     

Cross-Interaction Study of Cu/Sn/Pd and Ni/Sn/Pd Sandwich Solder Joint Structures

Cross-interactions between Cu/Sn/Pd and Ni/Sn/Pd sandwich structures were investigated in this work. For the Cu/Sn/Pd case, the growth behavior and morphology of the interfacial (Pd,Cu)Sn₄ compound layer was very similar to that of the single Pd/Sn interfacial reaction. This indicates that the growth of the (Pd,Cu)Sn₄ layer at the Sn/Pd interface would not be affected by the opposite Cu/Sn interfacial reaction. We can conclude that there is no cross-interaction effect between the two interfacial reactions in the Cu/Sn/Pd sandwich structure. For the Ni/Sn/Pd case, we observed that: (1) after 300 s of reflow time, the (Pd,Ni)Sn₄ compound heterogeneously nucleated on the Ni₃Sn₄ compound layer at the Sn/Ni interface; (2) the growth of the interfacial PdSn₄ compound layer was greatly suppressed by the formation of the (Pd,Ni)Sn₄ compound at the Sn/Ni interface. We believe that this suppression of PdSn₄ growth is caused by heterogeneous nucleation of the (Pd,Ni)Sn₄ compound in the Ni₃Sn₄ compound layer, which decreases the free energy of the entire sandwich reaction system. The difference in the chemical potential of Pd in the PdSn₄ phase at the Pd/Sn interface and in the (Pd,Ni)Sn₄ phase at the Sn/Ni interface is the driving force for the Pd atomic flux across the molten Sn. The diffusion of Ni into the ternary (Pd,Ni)Sn₄ compound layer controls the Pd atomic flux across the molten Sn and the growth of the ternary (Pd,Ni)Sn₄ compound at the Sn/Ni interface.     

Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects

The effect of electromigration (EM) on the interfacial reaction in a line-type Cu/Sn/Ni-P/Al/Ni-P/Sn/Cu interconnect was investigated at 150°C under 5.0 × 10³ A/cm². When Cu atoms were under downwind diffusion, EM enhanced the cross-solder diffusion of Cu atoms to the opposite Ni-P/Sn (anode) interface compared with the aging case, resulting in the transformation of interfacial intermetallic compound (IMC) from Ni₃Sn₄ into (Cu,Ni)₆Sn₅. However, at the Sn/Cu (cathode) interface, the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.2 wt.% Ni) and Cu₃Sn. When Ni atoms were under downwind diffusion, only a very small quantity of Ni atoms diffused to the opposite Cu/Sn (anode) interface and the interfacial IMCs remained as Cu₆Sn₅ (containing less than 0.6 wt.% Ni) and Cu₃Sn. EM significantly accelerated the dissolution of Ni atoms from the Ni-P and the interfacial Ni₃Sn₄ compared with the aging case, resulting in fast growth of Ni₃P and Ni₂SnP, disappearance of interfacial Ni₃Sn₄, and congregation of large (Ni,Cu)₃Sn₄ particles in the Sn solder matrix. The growth kinetics of Ni₃P and Ni₂SnP were significantly accelerated after the interfacial Ni₃Sn₄ IMC completely dissolved into the solder, but still followed the t ^1/2 law.     

Interfaces in lead-free soldering

Structural integrity of circuits is greatly dependent on interfacial microstructure. In this paper, the status of the current understanding of various interfaces appearing in lead-free soldering is reviewed, and recent data on interfaces in electronic interconnections, primarily analyzed by transmission electron microscopy (TEM), is presented. The compound Cu₆Sn₅ is formed, as localized precipitates attach to the interface of a Cu substrate with Sn plating, even in an as-received condition. After long-time exposure at room temperature, it grows into a Cu₆Sn₅ layer along the interface. When the temperature is raised slightly or Sn in a plating layer is consumed by the reaction, a Cu₃Sn layer can grow between a Cu₆Sn₅ layer and a Cu substrate. In soldering, most Sn alloys involving pure Sn, Sn-Ag, or their ternary alloys form two intermetallic compounds, e.g., Cu₆Sn₅ and Cu₃Sn, on a Cu substrate, with the former much thicker than the latter. The Ni plating forms Ni₃Sn₄/Ni₃Sn₂ double layers at the interface with Sn alloys in soldering with the latter layer very much thinner. In contrast, Fe-42Ni alloy forms (Fe,Ni)Sn₂ double layers by the reaction with Sn and Sn-Ag(-Cu). When Zn becomes one of the elements of the solder, Zn first reacts with a substrate. Thus, the Sn-Zn alloy forms different intermetallic compounds at an interface with Cu, i.e., the CuZn/Cu₅Zn₈ double layers. The Sn-Zn alloy also forms a thin AuZn layer when thin Au plating is on a substrate.     

Growth Mechanism of a Ternary (Cu,Ni)<Subscript>6</Subscript>Sn<Subscript>5</Subscript> Compound at the Sn(Cu)/Ni(P) Interface

The growth mechanism of an interfacial (Cu,Ni)₆Sn₅ compound at the Sn(Cu) solder/Ni(P) interface under thermal aging has been studied in this work. The activation energy for the formation of the (Cu,Ni)₆Sn₅ compound for cases of Sn-3Cu/Ni(P), Sn-1.8Cu/Ni(P), and Sn-0.7Cu/Ni(P) was calculated to be 28.02 kJ/mol, 28.64 kJ/mol, and 29.97 kJ/mol, respectively. The obtained activation energy for the growth of the (Cu,Ni)₆Sn₅ compound layer was found to be close to the activation energy for Cu diffusion in Sn (33.02 kJ/mol). Therefore, the controlling step for formation of the ternary (Cu,Ni)₆Sn₅ layer could be Cu diffusion in the Sn(Cu) solder matrix.     

Study of Electromigration-Induced Failures on Cu Pillar Bumps Joined to OSP and ENEPIG Substrates

This work studies electromigration (EM)-induced failures on Cu pillar bumps joined to organic solderability preservative (OSP) on Cu substrates (OSP–bumps) and electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) under bump metallurgy (UBM) on Cu substrates (ENEPIG–bumps). Two failure modes (Cu pad consumption and gap formation) were found with OSP–bumps, but only one failure mode (gap formation) was found with ENEPIG–bumps. The main interfacial compound layer was the Cu₆Sn₅ compound, which suffered significant EM-induced dissolution, eventually resulting in severe Cu pad consumption at the cathode side for OSP–bumps. A (Cu,Ni)₆Sn₅ layer with strong resistance to EM-induced dissolution exists at the joint interface when a nickel barrier layer is incorporated at the cathode side (Ni or ENEPIG), and these imbalanced atomic fluxes result in the voids and gap formation. OSP–bumps showed better lifetime results than ENEPIG–bumps for several current stressing conditions. The inverse Cu atomic flux (J _Cu,chem) which diffuses from the Cu pad to cathode side retards the formation of voids. The driving force for J _Cu,chem comes from the difference in chemical potential between the (Cu,Ni)₆Sn₅ and Cu₆Sn₅ phases.     

Tensile behavior of pb-sn solder/cu joints

Solders of nominal 95Pb-5Sn and 60Sn-40Pb were used to join Cu plates. The effect of ternary additions of In, Ag, Sb, and Bi to the near-eutectic solder were also investigated. Bulk solder and interfacial joint microstructures were characterized for each solder alloy. The solder joints were strained to failure in tension; joint strength and failure mode were determined. 95Pb-5Sn/Cu and 60Sn-40Pb/Cu specimens were tested both as-processed and after reflow. 95Pb-5Sn/Cu as-processed and reflow specimens failed in tension in a ductile mode. Voids initiated at β-Sn precipitates in the as-processed specimens and at the Cu₃Sn intermetallic in the reflow specimens. 60Sn-40Pb/Cu failed transgranularly through the Cu₆Sn₅ intermetallic in both the as-processed and reflow conditions. The joint tensile strength of the reflow specimens was approximately half that of the as-processed specimens for both the high-Pb and near-eutectic alloys. The Cu₆Sn{5} intermetallic dominated the tensile failure mode of the near-eutectic solder/Cu joints. The fracture path of the near-eutectic alloys with ternary additions depended on the presence of Cu₆Sn₅ rods in the solder within the Cu plates. Specimens with ternary additions of In and Ag contained only interfacial intermetallics and exhibited interfacial failure at the Cu₆Sn₅. Joints manufactured with ternary additions of Sb and Bi contained rods of Cu₆Sn₅ within the solder. Tensile failure of the Sb and Bi specimens occurred through the solder at the Cu₆Sn₅ rods.     

Cross-interaction between Au and Cu in Au/Sn/Cu ternary diffusion couples

Both Au and Cu are so-called fast diffusers in Sn, and can diffuse very long distances in Sn in a relatively short time. In this study, the cross-interaction between Au and Cu across a layer of Sn was investigated through the use of the Au/Sn/Cu ternary diffusion couples. A 7-μm Au layer and a 100-μm Sn layer were electroplated over Cu foils to produce the Au/Sn/Cu diffusion couples. Aging at 200°C revealed that cross-interaction could occur in as short a time as 10 min. Evidence of this cross-interaction included the formation of (Cu_1−xAu_x)₆Sn₅ on the Au side of the diffusion couples as well as on the Cu side. The reaction products on the Au side included the Au-Sn binary compounds. Between the Au-Sn compounds and the Sn was (Cu_1−xAu_x)₆Sn₅. The reaction products on the Cu side initially was only (Cu_1−xAu_x)₆Sn₅, but a layer of Aufree Cu₃Sn eventually formed between (Cu_1−xAu_x)₆Sn₅ and Cu. A detailed atomic flux analysis showed that the Cu flux through the Sn layer was about 2–3 times higher than the Au flux at any moment. The results of this study show that the cross-interaction of Au and Cu in solders is extremely rapid, and cannot be ignored in those solder joints that have both elements present.     

Impact of Ni concentration on the intermetallic compound formation and brittle fracture strength of Sn–Cu–Ni (SCN) lead-free solder joints

Cu₆Sn₅ and Cu₃Sn are common intermetallic compounds (IMCs) found in Sn–Ag–Cu (SAC) lead-free solder joints with OSP pad finish. People typically attributed the brittle failure to excessive growth of IMCs at the interface between the solder joint and the copper pad. However, the respective role of Cu₆Sn₅ and Cu₃Sn played in the interfacial fracture still remains unclear. In the present study, various amounts of Ni were doped in the Sn–Cu based solder. The different effects of Ni concentration on the growth rate of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn were characterized and compared. The results of characterization were used to evaluate different growth rates of (Cu, Ni)₆Sn₅ and Cu₃Sn under thermal aging. The thicknesses of (Cu, Ni)₆Sn₅/Cu₆Sn₅ and Cu₃Sn after different thermal aging periods were measured. High speed ball pull/shear tests were also performed. The correlation between interfacial fracture strength and IMC layer thicknesses was established.     

Influence of Cu content on compound formation near the chip side for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump during aging

Sn-Ag-Cu solder is a promising candidate to replace conventional Sn-Pb solder. Interfacial reactions for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder joints were investigated after aging at 150°C. The under bump metallization (UBM) for the Sn-3.0Ag-(0.5 or 1.5)Cu solders on the chip side was an Al/Ni(V)/Cu thin film, while the bond pad for the Sn-3.0Ag-0.5Cu solder on the plastic substrate side was Cu/electroless Ni/immersion Au. In the Sn-3.0Ag-0.5Cu joint, the Cu layer at the chip side dissolved completely into the solder, and the Ni(V) layer dissolved and reacted with the solder to form a (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). For the Sn-3.0Ag-1.5Cu joint, only a portion of the Cu layer dissolved, and the remaining Cu layer reacted with solder to form Cu₆Sn₅ IMC. The Ni in Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. At the plastic substrate side, three interfacial products, (Cu_1−y,Ni_y)₆Sn₅, (Ni_1−x,Cu_x)₃Sn₄, and a P-rich layer, were observed between the solder and the EN layer in both Sn-Ag-Cu joints. The interfacial reaction near the chip side could be related to the Cu concentration in the solder joint. In addition, evolution of the diffusion path near the chip side in Sn-Ag-Cu joints during aging is also discussed herein.     

Effect of Bi Segregation on the Asymmetrical Growth of Cu-Sn Intermetallic Compounds in Cu/Sn-58Bi/Cu Sandwich Solder Joints During Isothermal Aging

An asymmetrical interfacial microstructure was observed at both top and bottom interfaces of Cu/Sn-58Bi/Cu solder joints after isothermal aging at 120°C for different times. The asymmetrical interfacial microstructure resulted from asymmetrical Bi segregation, which was attributed to the density difference between Bi and Sn atoms. Bi atoms were driven to the bottom solder/Cu interface by gravity during the liquid soldering procedure since Bi atoms are more massive than Sn atoms. With increasing aging time, Bi accumulated at the bottom Cu₃Sn/Cu interface and the Bi segregation enhanced Cu₆Sn₅ intermetallic compound growth, blocked Sn transport to the Cu₃Sn intermetallic compound, and facilitated growth of the Cu₆Sn₅, based on the measured thicknesses of intermetallic compounds (including Cu₆Sn₅ and Cu₃Sn) at both bottom and top interfaces for Cu/Sn-58Bi/Cu sandwich joints under the same aging process.     

Solid-State Reactions between Cu(Ni) Alloys and Sn

Solid-state interfacial reactions between Sn and Cu(Ni) alloys have been investigated at the temperature of 125°C. The following results were obtained. Firstly, the addition of 0.1 at.% Ni to Cu decreased the total thickness of the intermetallic compound (IMC) layer to about half of that observed in the␣binary Cu/Sn diffusion couple; the Ni addition decreased especially the thickness of Cu₃Sn. Secondly, the addition of 1 to 2.5 at.% Ni to Cu further decreased the thickness of Cu₃Sn, increased that of Cu₆Sn₅ (compared to that in the binary Cu/Sn couple) and produced significant amount of voids at the Cu/Cu₃Sn interface. Thirdly, the addition of 5 at.% Ni to Cu increased the total thickness of the IMC layer to about two times that observed in the binary Cu/Sn diffusion couple and made the Cu₃Sn disappear. Fourthly, in contrast to the previous case, the addition of 10 at.% Ni to Cu decreased the total IMC (Cu₆Sn₅) thickness again close to that of the Cu/Sn couple. With this Ni content no voids were detected. The results are rationalized with the help of␣the thermodynamics of the Sn-Cu-Ni system as well as with kinetic considerations.     

Interfacial microstructure between Sn-3Ag-xBi alloy and Cu substrate with or without electrolytic Ni plating

The microstructure of the interfacial phase of Sn-3Ag-xBi alloy on a Cu substrate with or without electrolytic Ni plating was evaluated. Bismuth additions into Sn-Ag alloys do not affect interfacial phase formations. Without plating, η-Cu₆Sn₅/ε-Cu₃Sn interfacial phases developed as reaction products in the as-soldered condition. The η-phase Cu₆Sn₅ with a hexagonal close-packed structure grows about 1-μm scallops. The ε-phase Cu₃Sn with an orthorhombic structure forms with small 100-nm grains between η-Cu₆Sn₅ and Cu. For Ni plating, a Ni₃Sn₄ layer of monoclinic structure formed as the primary reaction product, and a thin η-Ni₃Sn₂ layer of hexagonal close-packed structure forms between the Ni₃Sn₄ and Ni layer. In the Ni layer, Ni-Sn compound particles of nanosize distribute by Sn diffusion into Ni. On the total thickness of interfacial reaction layers, Sn-3Ag-6Bi joints are thicker by about 0.9 μm for the joint without Ni plating and 0.18 μm for the joint with Ni plating than Sn-3Ag joints, respectively. The thickening of interfacial reaction layers can affect the mechanical properties of strength and fatigue resistance.     

Electric current effects upon the Sn/Cu and Sn/Ni interfacial reactions

Electromigration-induced failures in integrated circuits have been intensively studied recently; however, electromigration effects upon interfacial reactions have not been addressed. These electromigration effects in the Sn/Cu and Sn/Ni systems were investigated in this study by analyzing their reaction couples annealed at 200°C with and without the passage of electric current. The intermetallics formed were ε-(Cu₃Sn) and η-(Cu₆Sn₅) phases in the Sn/Cu couples and Ni₃Sn₄ phase in the Sn/Ni couples. The same intermetallics were formed in the two types of couples with and without the passage of electric current. The thickness of the reaction layers was about the same in the two types of couples of the Sn/Cu system. In the Sn/Ni system, the growth of the intermetallic compound was enhanced when the flow direction of electrons and that of diffusion of Sn were the same. But the effect became inhibiting if the directions of these two were opposite. Theoretical calculation indicated that in the Sn/Ni system, the electromigration effect was significant and was 28% of the chemical potential effect for the Sn element flux when the Ni₃Sn₄ layer was 10 μm thick. For the Sn and Cu fluxes in the Sn/Cu reaction couples, similar calculations showed that the electromigration effects were only 2 and 4% of the chemical potential effects, respectively. These calculated results were in good agreement with the experimental observations that in the Sn/Cu system the electric current effects were insignificant upon the interfacial reactions.     

elemental redistribution and interfacial reaction mechanism for the flip chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump with Al/Ni(V)/Cu under-Bump metallization during aging

In flip chip technology, Al/Ni(V)/Cu under-bump metallization (UBM) is currently applicable for Pb-free solder, and Sn−Ag−Cu solder is a promising candidate to replace the conventional Sn−Pb solder. In this study, Sn-3.0Ag-(0.5 or 1.5)Cu solder bumps with Al/Ni(V)/Cu UBM after assembly and aging at 150°C were employed to investigate the elemental redistribution, and reaction mechanism between solders and UBMs. During assembly, the Cu layer in the Sn-3.0Ag-0.5Cu joint was completely dissolved into solders, while Ni(V) layer was dissolved and reacted with solders to form (Cu_1−y,Ni_y)₆Sn₅ intermetallic compound (IMC). The (Cu_1−y,Ni_y)₆Sn₅ IMC gradually grew with the rate constant of 4.63 × 10⁻⁸ cm/sec^0.5 before 500 h aging had passed. After 500 h aging, the (Cu_1−y,Ni_y)₆Sn₅ IMC dissolved with aging time. In contrast, for the Sn-3.0Ag-1.5Cu joint, only fractions of Cu layer were dissolved during assembly, and the remaining Cu layer reacted with solders to form Cu₆Sn₅ IMC. It was revealed that Ni in the Ni(V) layer was incorporated into the Cu₆Sn₅ IMC through slow solid-state diffusion, with most of the Ni(V) layer preserved. During the period of 2,000 h aging, the growth rate constant of (Cu_1−y,Ni_y)₆Sn₅ IMC was down to 1.74 × 10⁻⁸ cm/sec^0.5 in, the Sn-3.0Ag-1.5Cu joints. On the basis of metallurgical interaction, IMC morphology evolution, growth behavior of IMC, and Sn−Ag−Cu ternary isotherm, the interfacial reaction mechanism between Sn-3.0Ag-(0.5 or 1.5)Cu solder bump and Al/Ni(V)/Cu UBM was discussed and proposed.     

Electromigration Study on Sn(Cu) Solder/Ni(P) Joint Interfaces

This study investigates the electromigration (EM) effect under a high current density (10⁴?A/cm²) on the different interfacial compound phases at Sn(Cu) solder/electroless nickel immersion gold (ENIG) interfaces. The interfacial Ni₃Sn₄ phase at the Sn-0.7?wt.%Cu/ENIG joint interface was quickly depleted after a short period (50?h) of current stressing. The inference drawn is that the Ni atoms in the Ni₃Sn₄ phase at the joint interface are likely forced out under current stressing; however, the ternary (Cu,Ni)₆Sn₅ compound effectively reduces the EM-driven Ni flux into the Sn bump; thus, a significantly lower Ni(P) consumption was observed at the Sn-1?wt.%Cu/ENIG interface. The EM-induced Ni(P) dissolution rates in the Sn-0.2?wt.%Cu/ENIG and Sn-1?wt.%Cu/ENIG cases were calculated to be 0.028?μm/h and 0.018?μm/h, respectively. In addition, significant EM-assisted Ni₃P formation was observed for the current-stressed Sn-0.2?wt.%Cu/ENIG and Sn-0.7?wt.%Cu/ENIG cases; however, for the Sn-1?wt.%Cu/ENIG case, formation of a Ni₃P layer was scarcely observed. Moreover, the initial (Cu,Ni)₆Sn₅ that formed at the interface appeared compact with a layer-type structure, which reduced the EM-driven Ni diffusion.     

Study of Interfacial Reactions Between Sn(Cu) Solders and Ni-Co Alloy Layers

The interfacial reactions between electroplated Ni-yCo alloy layers and Sn(Cu) solders at 250°C are studied. For pure Co layers, CoSn₃ is the only interfacial compound phase formed at the Sn(Cu)/Co interfaces regardless of the Cu concentration. Also, the addition of Cu to Sn(Cu) solders has no obvious influence on the CoSn₃ compound growth at the Sn(Cu)/Co interfaces. For Ni-63Co layers, (Co,Ni,Cu)Sn₃ is the only interfacial compound phase formed at the Sn(Cu)/Ni-63Co interfaces. Unlike in the pure Co layer cases, the Cu additives in the Sn(Cu) solders clearly suppress the growth rate of the interfacial (Co,Ni,Cu)Sn₃ compound layer. For Ni-20Co layers, the interfacial compound formation at the Sn(Cu)/Ni-20Co interfaces depends on the Cu content in the Sn(Cu) solders and the reflow time. In the case of high Cu content in the Sn(Cu) solders (Sn-0.7Cu and Sn-1.2Cu), an additional needle-like interfacial (Ni _x ,Co _y ,Cu_1−x−y )₃Sn₄ phase forms above the continuous (Ni _x ,Cu _y ,Co_1−x−y )Sn₂ compound layer. The Ni content in the Ni-yCo layer can indeed reduce the interfacial compound formation at the Sn(Cu)/Ni-yCo interfaces. With pure Sn solders, the thickness of the compound layer monotonically decreases with the Ni content in the Ni-yCo layer. As for reactions with the Sn(Cu) solders, as the compound thickness decreases, the Ni content in the Ni-yCo layers increases.     

Interfacial Reaction Between 95Pb-5Sn Solder Bump and 37Pb-63Sn Presolder in Flip-Chip Solder Joints

Interdiffusion and interfacial reaction of 95Pb-5Sn solder bumps and 37Pb-63Sn presolder in flip-chip solder joints during high-temperature storage were studied. Reaction temperatures included 100°C, 130°C, 150°C, and 175°C. It was found that Cu₆Sn₅ and Cu₃Sn formed on the board side and (Ni,Cu)₃Sn₄ formed on the chip side after 100 h of aging. After 2000 h of aging at 175°C, the Ni under-bump metallization (UBM) was exhausted. This caused the (Ni,Cu)₃Sn₄ layer at the chip-side interface to be gradually converted into (Cu_0.6Ni_0.4)₆Sn₅. It was also found that the consumption of the Ni UBM was faster than the case where eutectic Sn-Pb solder was used for the entire joint. Nevertheless, the consumption of the Cu on the substrate side was slower than the case where pure eutectic Sn-Pb solder was used for the entire joint.