1种用于TPMS的新型环振式数字压力传感器

研制了一种新型环振式数字压力传感器,它可应用于汽车轮胎压力监测报警系统(TPMS).采用硅薄膜上的PMOS环形振荡器作为压力敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、温度系数低、灵敏度高以及制作工艺简单等特点.分析并设计了压力传感器的环形振荡器电路、混频器电路、物理结构.分析了环形振荡器的频率特性、环形振荡器的谐振频率与压力的关系,以及制作工艺,并制作了样品,其灵敏度为5.12 kHz/Bar.     

MOS环振式数字加速度传感器

提出了一种新的环振式数字加速度传感器,它采用做在硅梁上的MOS环形振荡器作为敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、灵敏度高、温度系数低以及制作工艺简单等特点.分析了环形振荡器的频率特性,以及环形振荡器的谐振频率和加速度的关系,分析并设计了加速度传感器的环形振荡器电路、混频器电路、物理结构以及制作工艺,并制作了样品,其灵敏度为6.91kHz/g.     

MOS环振式数字加速度传感器

提出了一种新的环振式数字加速度传感器,它采用做在硅梁上的MOS环形振荡器作为敏感元件,两个反方向变化的环振输出信号通过集成在片内的混频器实现频率相减.该传感器具有准数字输出、灵敏度高、温度系数低以及制作工艺简单等特点.分析了环形振荡器的频率特性,以及环形振荡器的谐振频率和加速度的关系,分析并设计了加速度传感器的环形振荡器电路、混频器电路、物理结构以及制作工艺,并制作了样品,其灵敏度为6 .91k Hz/g.     

具有频率输出的硅压力传感器

本工作提出的具有频率输出的硅压力传感器是建立在CMOS环形振荡器基础上的,该环形振荡器是放置在传感器芯片的薄膜上的.由于压力压阻效应,施加的压力在薄膜上产生的机械应力改变了环形振荡器中MOSFET载流子的迁移率,从而MOSFET的漏电流及相应的环振频率成为压力的函数.     

一种基于电流舵逻辑的环形振荡器

文章分析了电流舵逻辑门的动/静态特性.为了比较电流舵环形振荡器和普通数字反相器环形振荡器,采用1.2 μm标准CMOS工艺,设计并制作了两种环形振荡器.仿真和试验结果表明,电流舵环形振荡器具有低噪声和频率不随电压变化的特点,但其功耗比较大,适合于噪声要求高而功耗要求不高的电路.     

集成混频和放大功能的低价电路

在很多应用中，频率变换级包括有一只缓冲器．最好还有一些额外的电压增益电路；一只混频器：还有一些滤波电路。可以简单地将混频器功能与放大器集成起来．从而省掉混频器前的放大器。有种低价的实现办法是使用一只带掉电禁用功能的放大器。当用一个方波本振驱动禁用脚时，振荡器频率的方波将输入信号倍频，发生频率变换。     

一种低功耗宽锁定范围注入锁定式分频器

设计了一种低功耗宽锁定范围的注入锁定式2倍分频器。该分频器基于环形振荡器结构,能够产生正交混频器所需的正交本征信号。分频器的环形振荡器采用两级结构,而不是多级结构,降低了功耗。采用TSMC 0.18μm CMOS工艺进行电路和版图设计。寄生参数提取后的仿真结果表明,该分频器频率锁定范围为3~12GHz,在1.8V电源电压下的最大功耗仅为1.8mW,具有低功耗、宽锁定范围的特点。     

一种实用的电压控制环形振荡器

本文介绍了两种在集成电路中得到广泛应用的、作为内部时钟源的环形振荡器；RC环形振荡器和电压控制环形振荡器，并对引起振荡频率变化的关键因素进行了分析。     

一种实用的电压控制环形振荡器

本文介绍了两种在集成电路中得到广泛应用的，作为内部时钟源的环形振荡器，RC环形振荡器和电压控制环形振荡器，并对引起振荡频率变化的关键因素进行了分析。     

一种实用的电压控制环形振荡器

本文介绍了两种在集成电路中得到广泛应用的、作为内部时钟源的环形振荡器：RC环形振荡器和电压控制环形振荡器，并对引起振荡频率变化的关键因素进行了分析。     

A low-power oscillator mixer in 0.18-/spl mu/m CMOS technology

A downconversion double-balanced oscillator mixer using 0.18-/spl mu/m CMOS technology is proposed in this paper. This oscillator mixer consists of an individual mixer stacked on a voltage-controlled oscillator (VCO). The stacked structure allows entire mixer current to be reused by the VCO cross-coupled pair to reduce the total current consumption of the individual VCO and mixer. Using individual supply voltages and eliminating the tail current source, the stacked topology requires 1.0-V low supply voltage. The oscillator mixer achieves a voltage conversion gain of 10.9 dB at 4.2-GHz RF frequency. The oscillator mixer exhibits a tuning range of 11.5% and a single-sideband noise figure of 14.5 dB. The dc power consumption is 0.2 mW for the mixer and 2.94 mW for the VCO. This oscillator mixer requires a lower supply voltage and achieves a higher operating frequency among recently reported Si-based self-oscillating mixers and mixer oscillators. The mixer in this oscillator mixer also achieves a low power consumption compared with recently reported low-power mixers.     

A new approach to evaluation of hot-carrier lifetime of ringoscillator (RO)

The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f₀) and obtain a closer value between pulse-to-pulse voltage (V_p-p) and bias condition throughout the RO lifetime testing. These two achievements eliminate the innate flaws in conventional RO hot-carrier test method. Hence, a more reliable AC lifetime of RO is expected     

Transmission-Type Harmonic Mixers of MM-wave Range

A new kind of harmonic mixer for use in phase locking systems for MM-wave oscillators is presented. The mixer has compact design and combines directional coupler and conventional harmonic mixer in one element. Construction and features of the mixer are discussed. Experimentally measured main characteristics of the mixer are presented. Possibility of continuous frequency scan of phase locked MM-wave oscillator within a full waveguide band is demonstrated.     

A cross-coupled-structure-based temperature sensor with reduced process variation sensitivity

An innovative,thermally-insensitive phenomenon of cascaded cross-coupled structures is found.And a novel CMOS temperature sensor based on a cross-coupled structure is proposed.This sensor consists of two different ring oscillators.The first ring oscillator generates pulses that have a period,changing linearly with temperature.Instead of using the system clock like in traditional sensors,the second oscillator utilizes a cascaded cross-coupled structure to generate temperature independent pulses to capture the result from the first oscillator.Due to the compensation between the two ring oscillators,errors caused by supply voltage variations and systematic process variations are reduced.The layout design of the sensor is based on the TSMC13G process standard cell library.Only three inverters are modified for proper channel width tuning without any other custom design.This allows for an easy integration of the sensor into cell-based chips.Post-layout simulations results show that an error lower than±1.1℃ can be achieved in the full temperature range from-40 to 120℃.As shown by SPICE simulations,the thermal insensitivity of the cross-coupled inverters can be realized for various TSMC technologies:0.25/μm,0.18μm,0.13μm,and 65 nm.     

A study of phase noise in colpitts and LC-tank CMOS oscillators

This paper presents a study of phase noise in CMOS Colpitts and LC-tank oscillators. Closed-form symbolic formulas for the 1/f/sup 2/ phase-noise region are derived for both the Colpitts oscillator (either single-ended or differential) and the LC-tank oscillator, yielding highly accurate results under very general assumptions. A comparison between the differential Colpitts and the LC-tank oscillator is also carried out, which shows that the latter is capable of a 2-dB lower phase-noise figure-of-merit (FoM) when simplified oscillator designs and ideal MOS models are adopted. Several prototypes of both Colpitts and LC-tank oscillators have been implemented in a 0.35-/spl mu/m CMOS process. The best performance of the LC-tank oscillators shows a phase noise of -142dBc/Hz at 3-MHz offset frequency from a 2.9-GHz carrier with a 16-mW power consumption, resulting in an excellent FoM of /spl sim/189 dBc/Hz. For the same oscillation frequency, the FoM displayed by the differential Colpitts oscillators is /spl sim/5 dB lower.     

集成MOS力敏运放压力传感器

设计并制作出一种新型集成压力传感器——集成MOS力敏运放压力传感器．它将运算放大器中的一对PMOS差分输入管集中设置在N型(100)Si膜片上的最大应力区，并使它们的沟道方向相互垂直，运放中其它元件全部集中设置在厚体硅上的低应力区．在压力作用下，输入级MOS 管沟道中载流子迁移率发生变化，运算放大器以其为输入信号而产生力敏输出．这种压力传感器具有很高的压力响应灵敏度，可望在诸多领域有广泛应用．     

Investigation of a Single-Sideband Mixer Anomaly

Measurements on a 6-GHz single-sideband (SSB) balun-coupled mixer revealed a feedthrough of RF signals between the two mixer sections that caused the IF outputs to be unbalanced at the +-90° local oscillator (LO) phase differences when using a ring diode quad. Using a bridge diode quart in this same mixer eliminated this IF output unbalance. These measurements also give conclusive evidence that the balun-coupled mixer has a short-circuited image frequency voltage with the ring diode quad and an open-circuited image frequency voltage with the bridge diode quad. These two image frequency impedance conditions are independent of circuit terminating impedances and solely depend on the image frequency current path being completed or interrupted by the ring or bridge diode quads, respectively.     

基于交叉耦合结构的抗工艺偏差温度传感器

An innovative, thermally-insensitive phenomenon of cascaded cross-coupled structures is found. And a novel CMOS temperature sensor based on a cross-coupled structure is proposed. This sensor consists of two different ring oscillators. The first ring oscillator generates pulses that have a period, changing linearly with temperature. Instead of using the system clock like in traditional sensors, the second oscillator utilizes a cascaded cross-coupled structure to generate temperature independent pulses to capture the result from the first oscillator. Due to the compensation between the two ring oscillators, errors caused by supply voltage variations and systematic process variations are reduced. The layout design of the sensor is based on the TSMC13G process standard cell library. Only three inverters are modified for proper channel width tuning without any other custom design. This allows for an easy integration of the sensor into cell-based chips. Post-layout simulations results show that an error lower than ±1.1 °C can be achieved in the full temperature range from 40 to 120 °C. As shown by SPICE simulations, the thermal insensitivity of the cross-coupled inverters can be realized for various TSMC technologies： 0.25 μm, 0.18 μm, 0.13 μm, and 65 nm.     

A second-harmonic LC-quadrature voltage controlled oscillator with direct connection of MOSFETs’ substrate

This work introduces a new low noise second-harmonic quadrature voltage controlled oscillator (QVCO) made by coupling two identical cross-connected LC voltage controlled oscillators. In each of the core oscillators the substrate nodes of the MOS varactors, and also the substrate nodes of the cross-connected MOSFETs are configured in such a way that they act as common mode nodes. Then the core oscillators are coupled together via direct connection of the substrates of the MOS varactors in one of the core oscillators to the substrates of the cross-connected MOSFETs in the other core oscillator, and vice versa. No extra elements are used for coupling of the two core oscillators and therefore no extra noise sources are imposed on the circuit. Operation of the proposed QVCO was investigated with simulation using a commercial 0.18 μm RF CMOS technology: it shows a power dissipation of 9.7 mW from a 1.8 V supply voltage and a simulated phase noise of −125.5 dBc/Hz at 1 MHz offset from center oscillation frequency of 5 GHz. Since the tail transistor can be eliminated, the proposed QVCO can operate with supply voltages as low as 0.5 V, as confirmed with simulation.